{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T13:32:01Z","timestamp":1768743121254,"version":"3.49.0"},"reference-count":20,"publisher":"Wiley","issue":"2","license":[{"start":{"date-parts":[[2011,12,21]],"date-time":"2011-12-21T00:00:00Z","timestamp":1324425600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Physica Rapid Research Ltrs"],"published-print":{"date-parts":[[2012,2]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>The design strategy presently employed to obtain \u2018white\u2019 light from semiconductors combines the emission of an InGaN blue or UV light\u2010emitting diode (LED) with that of one or more yellow\u2010orange phosphors. While commercially successful, this approach achieves good colour rendering only by increasing the number and spectral range of the phosphors used; compared to the alternative of combining \u2018true\u2019 red, green and blue (RGB) sources, it is intrinsically inefficient. The two major roadblocks to the RGB approach are 1. the green gap in the internal quantum efficiency (IQE) of LEDs; 2. the diode droop in the efficiency of LEDs at higher current densities. The physical origin of these effects, in the case of III\u2010nitrides, is generally thought to be a combination of Quantum Confined Stark Effect (QCSE) and Auger Effect (AE). These effects respectively reduce the electron\u2013hole wave\u2010 function overlap of In\u2010rich InGaN quantum wells (QW), and provide a non\u2010radiative shunt for electron\u2013hole recombination, particularly at higher excitation densities. SORBET, a novel band gap engineering strategy based upon quantum well intermixing (QWIM), offers solutions to both of the roadblocks mentioned above. In this introduction to SORBET, its great potential is tested and confirmed by the results of simulations of green InGaN diodes performed using the TiberCAD device modelling suite, which calculates the macroscopic properties of real\u2010world optoelectronic and electronic devices in a multiscale formalism. An alternative approach to the realisation of RGB GaN\u2010based LEDs through doping of an active layer by rare earth (RE) ions will also be briefly described. (\u00a9 2012 WILEY\u2010VCH Verlag GmbH &amp; Co. KGaA, Weinheim)<\/jats:p>","DOI":"10.1002\/pssr.201100206","type":"journal-article","created":{"date-parts":[[2011,12,21]],"date-time":"2011-12-21T12:21:41Z","timestamp":1324470101000},"page":"49-52","source":"Crossref","is-referenced-by-count":57,"title":["It's not easy being green: Strategies for all\u2010nitrides, all\u2010colour solid state lighting"],"prefix":"10.1002","volume":"6","author":[{"given":"K. P.","family":"O'Donnell","sequence":"first","affiliation":[]},{"given":"M.","family":"Auf der Maur","sequence":"additional","affiliation":[]},{"given":"A.","family":"Di Carlo","sequence":"additional","affiliation":[]},{"given":"K.","family":"Lorenz","sequence":"additional","affiliation":[]},{"family":"the SORBET consortium","sequence":"additional","affiliation":[]}],"member":"311","published-online":{"date-parts":[[2011,12,21]]},"reference":[{"key":"e_1_2_7_2_2","doi-asserted-by":"publisher","DOI":"10.1126\/science.1108712"},{"key":"e_1_2_7_3_2","doi-asserted-by":"publisher","DOI":"10.1109\/JSTQE.2009.2013476"},{"key":"e_1_2_7_4_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.3133359"},{"key":"e_1_2_7_5_2","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/6\/8\/019"},{"key":"e_1_2_7_6_2","doi-asserted-by":"publisher","DOI":"10.1038\/nature08072"},{"key":"e_1_2_7_7_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.78.1110"},{"key":"e_1_2_7_8_2","unstructured":"TiberCAD simulation package http:\/\/www.tiberlab.com."},{"key":"e_1_2_7_9_2","doi-asserted-by":"publisher","DOI":"10.1109\/TED.2011.2114666"},{"key":"e_1_2_7_10_2","first-page":"1077","volume":"15","author":"Zhao H.","year":"2009","journal-title":"IEEE J. Sel. Top. Quantum Electron."},{"key":"e_1_2_7_10_3","doi-asserted-by":"publisher","DOI":"10.1088\/0957-4484\/19\/05\/055205"},{"key":"e_1_2_7_11_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.54.2491"},{"key":"e_1_2_7_12_2","doi-asserted-by":"publisher","DOI":"10.1109\/JSTQE.2002.801690"},{"key":"e_1_2_7_13_2","doi-asserted-by":"crossref","unstructured":"K. P.O'Donnell(Ed.) Rare Earth Doped III\u2010Nitrides for Optoelectronic and Spintronic Applications Topics in Applied Physics Vol. 124 (Springer 2010).","DOI":"10.1007\/978-90-481-2877-8"},{"key":"e_1_2_7_14_2","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.200440032"},{"key":"e_1_2_7_14_3","doi-asserted-by":"publisher","DOI":"10.1063\/1.2357343"},{"key":"e_1_2_7_14_4","doi-asserted-by":"publisher","DOI":"10.1016\/j.optmat.2005.09.022"},{"key":"e_1_2_7_15_2","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.81.085209"},{"key":"e_1_2_7_16_2","doi-asserted-by":"publisher","DOI":"10.1143\/APEX.2.071004"},{"key":"e_1_2_7_17_2","doi-asserted-by":"publisher","DOI":"10.1063\/1.3489103"},{"key":"e_1_2_7_18_2","unstructured":"K. P.O'Donnell Proc. MRS Spring Meeting 2011 Symposium V submitted."}],"container-title":["physica status solidi (RRL) \u2013 Rapid Research Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/api.wiley.com\/onlinelibrary\/tdm\/v1\/articles\/10.1002%2Fpssr.201100206","content-type":"unspecified","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssr.201100206","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,10,8]],"date-time":"2023-10-08T06:45:34Z","timestamp":1696747534000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssr.201100206"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,12,21]]},"references-count":20,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2012,2]]}},"alternative-id":["10.1002\/pssr.201100206"],"URL":"https:\/\/doi.org\/10.1002\/pssr.201100206","archive":["Portico"],"relation":{},"ISSN":["1862-6254","1862-6270"],"issn-type":[{"value":"1862-6254","type":"print"},{"value":"1862-6270","type":"electronic"}],"subject":[],"published":{"date-parts":[[2011,12,21]]}}}