{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,27]],"date-time":"2026-03-27T22:23:32Z","timestamp":1774650212849,"version":"3.50.1"},"reference-count":53,"publisher":"Wiley","license":[{"start":{"date-parts":[[2025,5,25]],"date-time":"2025-05-25T00:00:00Z","timestamp":1748131200000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/onlinelibrary.wiley.com\/termsAndConditions#vor"}],"funder":[{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["UID\/05367\/2020"],"award-info":[{"award-number":["UID\/05367\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["PTDC\/CTM\u2010CTM\/3553\/2020"],"award-info":[{"award-number":["PTDC\/CTM\u2010CTM\/3553\/2020"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["2022.05329.PTDC"],"award-info":[{"award-number":["2022.05329.PTDC"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100001871","name":"Funda\u00e7\u00e3o para a Ci\u00eancia e a Tecnologia","doi-asserted-by":"publisher","award":["PD\/BD\/143017\/2018"],"award-info":[{"award-number":["PD\/BD\/143017\/2018"]}],"id":[{"id":"10.13039\/501100001871","id-type":"DOI","asserted-by":"publisher"}]},{"DOI":"10.13039\/501100002911","name":"Universidad Complutense de Madrid","doi-asserted-by":"publisher","award":["PR\/23\u201030813"],"award-info":[{"award-number":["PR\/23\u201030813"]}],"id":[{"id":"10.13039\/501100002911","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Physica Rapid Research Ltrs"],"abstract":"<jats:p>\u03b1\u2010MoO<jats:sub>3<\/jats:sub> field effect transistors (FETs), exhibiting n\u2010type behavior, are fabricated. These devices are based on \u03b1\u2010MoO<jats:sub>3<\/jats:sub> exfoliated crystals, which are produced from bulk crystals by mechanical exfoliation and then transferred onto Si\/SiO<jats:sub>2<\/jats:sub> substrates, through a two\u2010step clean transfer process. The FET devices are then achieved by depositing three electrical contacts in a bottom\u2010gate geometry, using photolithography, metal sputtering deposition, and lift\u2010off. Thermal treatments in different atmospheres (vacuum and air) are performed to tune the electrical properties of the channel material by controlling the oxygen vacancy concentration. Preliminary electrical characterization of a modified device reveals a modulation of channel resistance with the gate bias, in agreement with the characteristic n\u2010type behavior of \u03b1\u2010MoO<jats:sub>3<\/jats:sub>. Notably, it exhibits a promising electron mobility value of \u22480.117\u2009cm<jats:sup>2<\/jats:sup>\u2009V<jats:sup>\u22121<\/jats:sup>\u2009s<jats:sup>\u22121<\/jats:sup>, which is comparable to values reported for n\u2010type FETs based on a single\/few atomic layers of \u03b1\u2010MoO<jats:sub>3<\/jats:sub> and MoS<jats:sub>2<\/jats:sub>. Additionally, the transfer curves exhibit anticlockwise hysteresis effects, likely attributed to the adsorption\/desorption processes of oxygen molecules on the channel surface, promoted by the applied gate voltage.<\/jats:p>","DOI":"10.1002\/pssr.202500104","type":"journal-article","created":{"date-parts":[[2025,5,25]],"date-time":"2025-05-25T18:39:11Z","timestamp":1748198351000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Field Effect Transistors Based on \u03b1\u2010MoO<sub>3<\/sub> Exfoliated Crystals: Fabrication, Functionalization and Characterization"],"prefix":"10.1002","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-3710-9707","authenticated-orcid":false,"given":"Daniela","family":"R. Pereira","sequence":"first","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"},{"name":"IPFN Instituto Superior T\u00e9cnico University of Lisbon  Av. Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]},{"given":"Chamseddine","family":"Bouhafs","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"}]},{"given":"Dirkjan","family":"Verheij","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"},{"name":"IPFN Instituto Superior T\u00e9cnico University of Lisbon  Av. Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]},{"given":"Carlos","family":"D\u00edaz\u2010Guerra","sequence":"additional","affiliation":[{"name":"Departamento de F\u00edsica de Materiales Facultad de Ciencias F\u00edsicas Universidad Complutense de Madrid  Pl. de las Ciencias 1 28040 Madrid Moncloa\u2010Aravaca Spain"}]},{"given":"Luis","family":"V\u00e1zquez","sequence":"additional","affiliation":[{"name":"Instituto de Ciencia de Materiales de Madrid ICMM (CSIC)  Sor Juana Ines de la Cruz 3 28049 Madrid Cantoblanco Spain"}]},{"given":"Marco","family":"Peres","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"},{"name":"IPFN Instituto Superior T\u00e9cnico University of Lisbon  Av. Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]},{"given":"Susana","family":"Cardoso","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"},{"name":"Instituto Superior T\u00e9cnico University of Lisbon  Av. Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]},{"given":"Paulo","family":"P. Freitas","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"},{"name":"INL \u2010 International Iberian Nanotechnology Laboratory  Avenida Mestre Jos\u00e9 Veiga s\/n 4715\u2010330 Braga Portugal"}]},{"given":"Katharina","family":"Lorenz","sequence":"additional","affiliation":[{"name":"Instituto de Engenharia de Sistemas e Computadores \u2013 Microsistemas e Nanotecnologias (INESC MN)  Rua Alves Redol 9 1000\u2010029 Lisboa Portugal"},{"name":"IPFN Instituto Superior T\u00e9cnico University of Lisbon  Av. Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]}],"member":"311","published-online":{"date-parts":[[2025,5,25]]},"reference":[{"key":"e_1_2_9_2_1","doi-asserted-by":"publisher","DOI":"10.3390\/s16020223"},{"key":"e_1_2_9_3_1","doi-asserted-by":"publisher","DOI":"10.1126\/science.1102896"},{"key":"e_1_2_9_4_1","doi-asserted-by":"publisher","DOI":"10.1073\/pnas.0502848102"},{"key":"e_1_2_9_5_1","doi-asserted-by":"publisher","DOI":"10.1038\/nnano.2010.279"},{"key":"e_1_2_9_6_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201203346"},{"key":"e_1_2_9_7_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201503698"},{"key":"e_1_2_9_8_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsami.6b14255"},{"key":"e_1_2_9_9_1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1002\/adma.201701619","volume":"29","author":"de Castro I. A.","year":"2017","journal-title":"Adv. Mater."},{"key":"e_1_2_9_10_1","doi-asserted-by":"crossref","first-page":"9753","DOI":"10.1021\/nn403241f","volume":"11","author":"Balendhran S.","year":"2013","journal-title":"ACS Nano"},{"key":"e_1_2_9_11_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.snb.2014.08.017"},{"key":"e_1_2_9_12_1","doi-asserted-by":"publisher","DOI":"10.1039\/c0jm03815f"},{"key":"e_1_2_9_13_1","doi-asserted-by":"publisher","DOI":"10.1039\/C4CS00350K"},{"key":"e_1_2_9_14_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4830278"},{"key":"e_1_2_9_15_1","doi-asserted-by":"publisher","DOI":"10.1039\/B9NR00320G"},{"key":"e_1_2_9_16_1","doi-asserted-by":"crossref","first-page":"3","DOI":"10.1002\/aelm.202000635","volume":"6","author":"Holler B. A.","year":"2020","journal-title":"Adv. Electron. Mater."},{"key":"e_1_2_9_17_1","doi-asserted-by":"publisher","DOI":"10.3390\/ma15175859"},{"key":"e_1_2_9_18_1","doi-asserted-by":"publisher","DOI":"10.1021\/prechem.4c00014"},{"key":"e_1_2_9_19_1","doi-asserted-by":"publisher","DOI":"10.1007\/s10854-015-3639-2"},{"key":"e_1_2_9_20_1","doi-asserted-by":"publisher","DOI":"10.1002\/adfm.201605380"},{"key":"e_1_2_9_21_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.actamat.2019.02.029"},{"key":"e_1_2_9_22_1","doi-asserted-by":"publisher","DOI":"10.1021\/ja3026906"},{"key":"e_1_2_9_23_1","doi-asserted-by":"publisher","DOI":"10.1021\/jp9093172"},{"key":"e_1_2_9_24_1","doi-asserted-by":"publisher","DOI":"10.1039\/b107012f"},{"key":"e_1_2_9_25_1","doi-asserted-by":"crossref","DOI":"10.1002\/0470068329","volume-title":"Physics Of Semiconductor Devices Physics Of Semiconductor Devices","author":"Sze S. M.","year":"2006"},{"key":"e_1_2_9_26_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/aa79d5"},{"key":"e_1_2_9_27_1","doi-asserted-by":"crossref","first-page":"015016","DOI":"10.1088\/2053-1583\/aaedc8","volume":"6","author":"Kim J. H.","year":"2019","journal-title":"2D Mater."},{"key":"e_1_2_9_28_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/aac65e"},{"key":"e_1_2_9_29_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3696045"},{"key":"e_1_2_9_30_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn301572c"},{"key":"e_1_2_9_31_1","doi-asserted-by":"crossref","unstructured":"A.Meersha B.Sathyajit M.Shrivastava A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET IEEE Hyderabad India 2017 437.","DOI":"10.1109\/VLSID.2017.67"},{"key":"e_1_2_9_32_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/ab4020"},{"key":"e_1_2_9_33_1","doi-asserted-by":"publisher","DOI":"10.1038\/srep04891"},{"key":"e_1_2_9_34_1","doi-asserted-by":"publisher","DOI":"10.1038\/nmat4810"},{"key":"e_1_2_9_35_1","first-page":"1","volume":"7","author":"Mokhles Gerami A.","year":"2023","journal-title":"Phys. Rev. Mater."},{"key":"e_1_2_9_36_1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/s41699-017-0038-y","volume":"1","author":"Kaushik N.","year":"2017","journal-title":"Npj 2D Mater. Appl."},{"key":"e_1_2_9_37_1","doi-asserted-by":"publisher","DOI":"10.1109\/JEDS.2018.2875976"},{"key":"e_1_2_9_38_1","doi-asserted-by":"publisher","DOI":"10.1002\/adma.201700906"},{"key":"e_1_2_9_39_1","doi-asserted-by":"publisher","DOI":"10.1039\/D2RA02652J"},{"key":"e_1_2_9_40_1","doi-asserted-by":"crossref","first-page":"16836","DOI":"10.1021\/acs.jpcc.9b03822","volume":"123","author":"Head A. R.","year":"2019","journal-title":"J. Phys. Chem. C"},{"key":"e_1_2_9_41_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.surfcoat.2018.01.034"},{"key":"e_1_2_9_42_1","doi-asserted-by":"publisher","DOI":"10.1021\/acsnano.7b00113"},{"key":"e_1_2_9_43_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.3073042"},{"key":"e_1_2_9_44_1","doi-asserted-by":"publisher","DOI":"10.1186\/1556-276X-6-404"},{"key":"e_1_2_9_45_1","first-page":"2","volume":"12","author":"Zou J.","year":"2018","journal-title":"Phys. Status Solidi \u2010 Rapid Res. Lett."},{"key":"e_1_2_9_46_1","doi-asserted-by":"publisher","DOI":"10.1088\/2053-1583\/abc187"},{"key":"e_1_2_9_47_1","doi-asserted-by":"publisher","DOI":"10.1109\/LED.2016.2635579"},{"key":"e_1_2_9_48_1","doi-asserted-by":"publisher","DOI":"10.1149\/2.0211808jss"},{"key":"e_1_2_9_49_1","doi-asserted-by":"publisher","DOI":"10.1021\/nn5009148"},{"key":"e_1_2_9_50_1","first-page":"1","volume":"6","author":"Liang J.","year":"2019","journal-title":"Adv. Mater. Interfaces"},{"key":"e_1_2_9_51_1","doi-asserted-by":"crossref","first-page":"1501","DOI":"10.3390\/cryst13101501","volume":"13","author":"Transistor B. F. E.","year":"2023","journal-title":"Crystals"},{"key":"e_1_2_9_52_1","unstructured":"M. V.Santos PhD thesis Universidad Complutense de Madrid2014."},{"key":"e_1_2_9_53_1","doi-asserted-by":"crossref","first-page":"355105","DOI":"10.1088\/0022-3727\/47\/35\/355105","volume":"74","author":"Vila M.","year":"2014","journal-title":"J. Phys. D. Appl. Phys."},{"key":"e_1_2_9_54_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/aab636"}],"container-title":["physica status solidi (RRL) \u2013 Rapid Research Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/pssr.202500104","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,5,25]],"date-time":"2025-05-25T18:39:15Z","timestamp":1748198355000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/pssr.202500104"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,25]]},"references-count":53,"alternative-id":["10.1002\/pssr.202500104"],"URL":"https:\/\/doi.org\/10.1002\/pssr.202500104","archive":["Portico"],"relation":{},"ISSN":["1862-6254","1862-6270"],"issn-type":[{"value":"1862-6254","type":"print"},{"value":"1862-6270","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,5,25]]},"assertion":[{"value":"2025-03-09","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2025-05-25","order":3,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2500104"}}