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In AlN, despite strong local distortion at high fluence, the gradual strain profiles suggest a capacity for uniform stress redistribution. The damage is most severe at\n                    <jats:italic>x<\/jats:italic>\n                    \u2009\u2248\u20090.5, where \u27e8\u0394\n                    <jats:italic>d<\/jats:italic>\n                    \u27e9 exceeds 2.9\u2009\u00c5 and DW drops below 0.1, suggesting defect clustering. Ga\u2010rich films show partial recovery, though still marked by high displacements and static disorder. Stopping and Range of Ions in Matter (SRIM) simulations align closely with the experimental profiles. The analysis reveals three overlapping damage regimes across the Al\n                    <jats:sub>1<\/jats:sub>\n                    <jats:sub>\u2013<\/jats:sub>\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    Ga\n                    <jats:sub>\n                      <jats:italic>x<\/jats:italic>\n                    <\/jats:sub>\n                    N series, with Al\u2010rich, mid\u2010range, and Ga\u2010rich compositions exhibiting distinct structural responses to implantation. Beyond nitrides, the method is also demonstrated on hexagonal 4H\u2010SiC, orthorhombic \u03b1\u2010MoO\n                    <jats:sub>3<\/jats:sub>\n                    , and monoclinic \u03b2\u2010Ga\n                    <jats:sub>2<\/jats:sub>\n                    O\n                    <jats:sub>3<\/jats:sub>\n                    , confirming its broad applicability to ion\u2010implanted single crystals.\n                  <\/jats:p>","DOI":"10.1002\/pssr.202500144","type":"journal-article","created":{"date-parts":[[2025,6,28]],"date-time":"2025-06-28T08:15:07Z","timestamp":1751098507000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Compositional Mapping of Ion Implantation Damage in Al\n                    <sub>\n                      1\u2212\n                      <i>x<\/i>\n                    <\/sub>\n                    Ga\n                    <sub>\n                      <i>x<\/i>\n                    <\/sub>\n                    N via a Two\u2010Step High\u2010Resolution X\u2010Ray Diffraction Simulation"],"prefix":"10.1002","volume":"20","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-5858-549X","authenticated-orcid":false,"given":"S\u00e9rgio","family":"Magalh\u00e3es","sequence":"first","affiliation":[{"name":"DECN Departamento de Engenharias e Ci\u00eancias Nucleares Campus Tecnol\u00f3gico e Nuclear Instituto Superior T\u00e9cnico  Estrada Nacional 10 2695\u2010066 Bobadela LRS Portugal"},{"name":"IPFN Instituto de Plasmas e Fus\u00e3o Nuclear  Avenida Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]},{"given":"Joaquim Gaspar","family":"Ramos","sequence":"additional","affiliation":[{"name":"Instituto Superior T\u00e9cnico Universidade de Lisboa  Avenida Rovisco Pais 1 1049\u2010001 Lisboa Portugal"}]},{"given":"Djibril Ndiack","family":"Faye","sequence":"additional","affiliation":[{"name":"Universidade do Minho Campus de Azur\u00e9m  Avenida da Universidade 4800\u2010058 Guimar\u00e3es Portugal"}]},{"given":"Duarte Magalh\u00e3es","family":"Esteves","sequence":"additional","affiliation":[{"name":"DECN Departamento de Engenharias e Ci\u00eancias Nucleares Campus Tecnol\u00f3gico e Nuclear Instituto Superior T\u00e9cnico  Estrada Nacional 10 2695\u2010066 Bobadela LRS Portugal"},{"name":"Instituto de Engenharia de Sistemas de Computadores\u2010Microsystems and Nanotechnology (INESC\u2010MN)  1000\u2010029 Lisboa Portugal"}]},{"given":"Daniela Rodrigues","family":"Pereira","sequence":"additional","affiliation":[{"name":"IPFN Instituto de Plasmas e Fus\u00e3o Nuclear  Avenida Rovisco Pais 1 1049\u2010001 Lisboa Portugal"},{"name":"Instituto de Engenharia de Sistemas de Computadores\u2010Microsystems and Nanotechnology (INESC\u2010MN)  1000\u2010029 Lisboa Portugal"}]},{"given":"Marco","family":"Peres","sequence":"additional","affiliation":[{"name":"DECN Departamento de Engenharias e Ci\u00eancias Nucleares Campus Tecnol\u00f3gico e Nuclear Instituto Superior T\u00e9cnico  Estrada Nacional 10 2695\u2010066 Bobadela LRS Portugal"},{"name":"IPFN Instituto de Plasmas e Fus\u00e3o Nuclear  Avenida Rovisco Pais 1 1049\u2010001 Lisboa Portugal"},{"name":"Instituto de Engenharia de Sistemas de Computadores\u2010Microsystems and Nanotechnology (INESC\u2010MN)  1000\u2010029 Lisboa Portugal"}]},{"given":"Gaurav","family":"Gupta","sequence":"additional","affiliation":[{"name":"Department of Physics and Astrophysics University of Delhi  Delhi 110007 India"}]},{"given":"Shyama","family":"Rath","sequence":"additional","affiliation":[{"name":"Department of Physics and Astrophysics University of Delhi  Delhi 110007 India"}]},{"given":"Katharina","family":"Lorenz","sequence":"additional","affiliation":[{"name":"DECN Departamento de Engenharias e Ci\u00eancias Nucleares Campus Tecnol\u00f3gico e Nuclear Instituto Superior T\u00e9cnico  Estrada Nacional 10 2695\u2010066 Bobadela LRS Portugal"},{"name":"IPFN Instituto de Plasmas e Fus\u00e3o Nuclear  Avenida Rovisco Pais 1 1049\u2010001 Lisboa Portugal"},{"name":"Instituto de Engenharia de Sistemas de Computadores\u2010Microsystems and Nanotechnology (INESC\u2010MN)  1000\u2010029 Lisboa Portugal"}]}],"member":"311","published-online":{"date-parts":[[2025,6,28]]},"reference":[{"key":"e_1_2_10_2_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-1-4684-2151-4"},{"key":"e_1_2_10_3_1","volume-title":"Ion Implantation in Semiconductors","author":"Ziegler J. 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