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However, up\u2010to\u2010date, high\u2010resolution study methods for the investigation of structural defects, such as transmission electron microscopy, X\u2010ray tomography, etc., are expensive and demand complicated sample preparation. With an example of the lanthanum\u2010doped bismuth ferrite ceramics, a novel method is proposed based on the switching spectroscopy piezoresponse force microscopy (SSPFM) that allows probing the electric potential from buried subsurface charged defects in the ferroelectric materials with a nanometer\u2010scale spatial resolution. When compared with the composition\u2010sensitive methods, such as neutron diffraction, X\u2010ray photoelectron spectroscopy, and local time\u2010of\u2010flight secondary ion mass spectrometry, the SSPFM sensitivity to the variation of the electric potential from the charged defects is shown to be equivalent to less than 0.3 at% of the defect concentration. Additionally, the possibility to locally evaluate dynamics of the polarization screening caused by the charged defects is demonstrated, which is of significant interest for further understanding defect\u2010mediated processes in ferroelectrics.<\/jats:p>","DOI":"10.1002\/smtd.202101289","type":"journal-article","created":{"date-parts":[[2021,12,30]],"date-time":"2021-12-30T06:38:18Z","timestamp":1640846298000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":21,"title":["Exploring Charged Defects in Ferroelectrics by the Switching Spectroscopy Piezoresponse Force Microscopy"],"prefix":"10.1002","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-9330-7463","authenticated-orcid":false,"given":"Denis","family":"Alikin","sequence":"first","affiliation":[{"name":"School of Natural Sciences and Mathematics Ural Federal University  Ekaterinburg 620000 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Belarus"}]},{"given":"Qingyuan","family":"Hu","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research Xi'an Jiaotong University  Xi'an 710049 China"}]},{"given":"Li","family":"Jin","sequence":"additional","affiliation":[{"name":"Electronic Materials Research Laboratory Key Laboratory of the Ministry of Education &amp; International Center for Dielectric Research Xi'an Jiaotong University  Xi'an 710049 China"}]},{"given":"Vladimir","family":"Shur","sequence":"additional","affiliation":[{"name":"School of Natural Sciences and Mathematics Ural Federal University  Ekaterinburg 620000 Russia"}]},{"given":"Alexander","family":"Tselev","sequence":"additional","affiliation":[{"name":"Department of Physics &amp; CICECO University of Aveiro  3810\u2010193 Aveiro Portugal"}]},{"given":"Andrei","family":"Kholkin","sequence":"additional","affiliation":[{"name":"School of 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