{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,24]],"date-time":"2025-10-24T12:35:10Z","timestamp":1761309310577,"version":"3.41.2"},"reference-count":58,"publisher":"Wiley","issue":"5","license":[{"start":{"date-parts":[[2021,9,17]],"date-time":"2021-09-17T00:00:00Z","timestamp":1631836800000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/creativecommons.org\/licenses\/by\/4.0\/"}],"content-domain":{"domain":["onlinelibrary.wiley.com"],"crossmark-restriction":true},"short-container-title":["Solar RRL"],"published-print":{"date-parts":[[2022,5]]},"abstract":"<jats:sec><jats:label\/><jats:p>The subject of hydrogen\u2013boron interactions in crystalline silicon is revisited with reference to light and elevated temperature\u2010induced degradation (LeTID) in boron\u2010doped solar silicon. Ab initio modeling of structure, binding energy, and electronic properties of complexes incorporating a substitutional boron and one or two hydrogen atoms is performed. From the calculations, it is confirmed that a BH pair is electrically inert. It is found that boron can bind two H atoms. The resulting BH<jats:sub>2<\/jats:sub> complex is a donor with a transition level estimated at <jats:italic>E<\/jats:italic>\n<jats:sub>c<\/jats:sub>\u20130.24\u2009eV. Experimentally, the electrically active defects in n\u2010type Czochralski\u2010grown Si crystals co\u2010doped with phosphorus and boron, into which hydrogen is introduced by different methods, are investigated using junction capacitance techniques. In the deep\u2010level transient spectroscopy (DLTS) spectra of hydrogenated Si:P\u2009+\u2009B crystals subjected to heat\u2010treatments at 100\u2009\u00b0C under reverse bias, an electron emission signal with an activation energy of \u22480.175\u2009eV is detected. The trap is a donor with electronic properties close to those predicted for boron\u2013dihydrogen. The donor character of BH<jats:sub>2<\/jats:sub> suggests that it can be a very efficient recombination center of minority carriers in B\u2010doped p\u2010type Si crystals. A sequence of boron\u2013hydrogen reactions, which can be related to the LeTID effect in Si:B is proposed.<\/jats:p><\/jats:sec>","DOI":"10.1002\/solr.202100459","type":"journal-article","created":{"date-parts":[[2021,9,8]],"date-time":"2021-09-08T18:16:07Z","timestamp":1631124967000},"update-policy":"https:\/\/doi.org\/10.1002\/crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Electronic Properties and Structure of Boron\u2013Hydrogen Complexes in Crystalline Silicon"],"prefix":"10.1002","volume":"6","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5306-5033","authenticated-orcid":false,"given":"Joyce Ann T.","family":"De Guzman","sequence":"first","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Vladimir P.","family":"Markevich","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Jos\u00e9","family":"Coutinho","sequence":"additional","affiliation":[{"name":"I3N and Department of Physics University of Aveiro  Campus Santiago 3810-193 Aveiro Portugal"}]},{"given":"Nikolay V.","family":"Abrosimov","sequence":"additional","affiliation":[{"name":"Leibniz-Institut f\u00fcr Kristallz\u00fcchtung (IKZ)  12489 Berlin Germany"}]},{"given":"Matthew P.","family":"Halsall","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]},{"given":"Anthony R.","family":"Peaker","sequence":"additional","affiliation":[{"name":"Photon Science Institute and Department of Electrical and Electronic Engineering The University of Manchester  Manchester M13 9PL UK"}]}],"member":"311","published-online":{"date-parts":[[2021,9,17]]},"reference":[{"key":"e_1_2_10_2_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.mssp.2018.01.019"},{"key":"e_1_2_10_3_1","doi-asserted-by":"publisher","DOI":"10.1002\/pip.3240"},{"key":"e_1_2_10_4_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssa.201700304"},{"key":"e_1_2_10_5_1","doi-asserted-by":"publisher","DOI":"10.1002\/pip.3199"},{"key":"e_1_2_10_6_1","doi-asserted-by":"publisher","DOI":"10.1088\/1361-6463\/abf807"},{"key":"e_1_2_10_7_1","doi-asserted-by":"publisher","DOI":"10.1109\/JPHOTOV.2020.3025240"},{"key":"e_1_2_10_8_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2019.110353"},{"journal-title":"Progr. Photovolt. Res. Appl.","year":"2020","author":"Chen D.","key":"e_1_2_10_9_1"},{"key":"e_1_2_10_10_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.202000584"},{"key":"e_1_2_10_11_1","unstructured":"D. C.Walter D.Bredemeier R.Falster V. V.Voronkov J.Schmidt inProc. 37th Eur. Photovoltaics Sol. Energy Conf. Exhib. WIP Munich Germany2020 pp.140\u2013144."},{"key":"e_1_2_10_12_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.94287"},{"key":"e_1_2_10_13_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.51.2224"},{"key":"e_1_2_10_14_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.95599"},{"key":"e_1_2_10_15_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.31.5525"},{"key":"e_1_2_10_16_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.35.5921"},{"key":"e_1_2_10_17_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.60.1422"},{"key":"e_1_2_10_18_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.39.10809"},{"key":"e_1_2_10_19_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.46.12365"},{"key":"e_1_2_10_20_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.353049"},{"key":"e_1_2_10_21_1","doi-asserted-by":"publisher","DOI":"10.1007\/978-3-642-18018-7"},{"key":"e_1_2_10_22_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5011327"},{"key":"e_1_2_10_23_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1794897"},{"key":"e_1_2_10_24_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1564060"},{"key":"e_1_2_10_25_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.2204597"},{"key":"e_1_2_10_26_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.54.11169"},{"key":"e_1_2_10_27_1","doi-asserted-by":"publisher","DOI":"10.1016\/0927-0256(96)00008-0"},{"key":"e_1_2_10_28_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.50.17953"},{"key":"e_1_2_10_29_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.77.3865"},{"key":"e_1_2_10_30_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.102.016402"},{"key":"e_1_2_10_31_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.60.1716"},{"key":"e_1_2_10_32_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.359858"},{"key":"e_1_2_10_33_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.4928146"},{"key":"e_1_2_10_34_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5135757"},{"key":"e_1_2_10_35_1","doi-asserted-by":"publisher","DOI":"10.1016\/0079-6425(80)90007-9"},{"key":"e_1_2_10_36_1","first-page":"033602","volume":"2","author":"Dudarev S. L.","year":"2018","journal-title":"Phys. Rev. Mat."},{"volume-title":"Properties of Crystalline Silicon","year":"1999","author":"George A.","key":"e_1_2_10_37_1"},{"key":"e_1_2_10_38_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.commatsci.2018.01.053"},{"key":"e_1_2_10_39_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.59.12301"},{"key":"e_1_2_10_40_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevB.51.4014"},{"volume-title":"Defects in Microelectronic Materials and Devices","year":"2009","author":"Peaker A. R.","key":"e_1_2_10_41_1"},{"volume-title":"Properties of Crystalline Silicon","year":"1999","author":"Stavola M.","key":"e_1_2_10_42_1"},{"key":"e_1_2_10_43_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.92755"},{"key":"e_1_2_10_44_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssr.201700133"},{"key":"e_1_2_10_45_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.5011351"},{"key":"e_1_2_10_46_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.1655871"},{"key":"e_1_2_10_47_1","doi-asserted-by":"publisher","DOI":"10.1007\/s11664-001-0181-1"},{"key":"e_1_2_10_48_1","doi-asserted-by":"publisher","DOI":"10.1103\/PhysRevLett.63.70"},{"key":"e_1_2_10_49_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.351620"},{"key":"e_1_2_10_50_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2019.109970"},{"journal-title":"IEEE J. Photovolt.","author":"Herguth A.","key":"e_1_2_10_51_1"},{"journal-title":"Phys. Status Solidi A","author":"Winter C.","key":"e_1_2_10_52_1"},{"key":"e_1_2_10_53_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2017.08.003"},{"key":"e_1_2_10_54_1","doi-asserted-by":"publisher","DOI":"10.1016\/j.solmat.2018.06.043"},{"key":"e_1_2_10_55_1","doi-asserted-by":"publisher","DOI":"10.1002\/solr.201600028"},{"key":"e_1_2_10_56_1","doi-asserted-by":"publisher","DOI":"10.1088\/0268-1242\/14\/1\/011"},{"key":"e_1_2_10_57_1","doi-asserted-by":"publisher","DOI":"10.1063\/1.367054"},{"key":"e_1_2_10_58_1","doi-asserted-by":"publisher","DOI":"10.1002\/pssb.201600779"},{"key":"e_1_2_10_59_1","doi-asserted-by":"publisher","DOI":"10.1016\/S0921-4526(01)00425-2"}],"container-title":["Solar RRL"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/solr.202100459","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/full-xml\/10.1002\/solr.202100459","content-type":"application\/xml","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/pdf\/10.1002\/solr.202100459","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,25]],"date-time":"2023-08-25T18:36:46Z","timestamp":1692988606000},"score":1,"resource":{"primary":{"URL":"https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/solr.202100459"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,9,17]]},"references-count":58,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2022,5]]}},"alternative-id":["10.1002\/solr.202100459"],"URL":"https:\/\/doi.org\/10.1002\/solr.202100459","archive":["Portico"],"relation":{},"ISSN":["2367-198X","2367-198X"],"issn-type":[{"type":"print","value":"2367-198X"},{"type":"electronic","value":"2367-198X"}],"subject":[],"published":{"date-parts":[[2021,9,17]]},"assertion":[{"value":"2021-06-27","order":0,"name":"received","label":"Received","group":{"name":"publication_history","label":"Publication History"}},{"value":"2021-09-17","order":2,"name":"published","label":"Published","group":{"name":"publication_history","label":"Publication History"}}],"article-number":"2100459"}}