{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T12:55:58Z","timestamp":1775480158273,"version":"3.50.1"},"publisher-location":"Berlin, Heidelberg","reference-count":12,"publisher":"Springer Berlin Heidelberg","isbn-type":[{"value":"9783540437925","type":"print"},{"value":"9783540480860","type":"electronic"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2002]]},"DOI":"10.1007\/3-540-48086-2_98","type":"book-chapter","created":{"date-parts":[[2007,5,28]],"date-time":"2007-05-28T06:54:50Z","timestamp":1180335290000},"page":"879-887","source":"Crossref","is-referenced-by-count":7,"title":["Distributed Simulation of Silicon-Based Film Growth"],"prefix":"10.1007","author":[{"given":"V. V.","family":"Krzhizhanovskaya","sequence":"first","affiliation":[]},{"given":"M. A.","family":"Zatevakhin","sequence":"additional","affiliation":[]},{"given":"A. A.","family":"Ignatiev","sequence":"additional","affiliation":[]},{"given":"Y. E.","family":"Gorbachev","sequence":"additional","affiliation":[]},{"given":"P. M. A.","family":"Sloot","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2002,6,6]]},"reference":[{"key":"98_CR1","unstructured":"Yu.V. Lapin, M.Kh. Strelets. Internal flows of gas mixtures. Moscow, Nauka, 1989"},{"issue":"1","key":"98_CR2","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1007\/BF02369744","volume":"35","author":"V.A. Schweigert","year":"1994","unstructured":"V.A. Schweigert, M.I. Zhilyaev, I.V. Schweigert. Simulation of RF silane discharge. Appl. Mech. Tech. Phys. V. 35, N 1, 1994, pp. 13\u201321","journal-title":"Appl. Mech. Tech. Phys."},{"key":"98_CR3","unstructured":"M.N. Kogan. Dynamics of rarefied gas. Moscow, Nauka, 1967 (in Russian)"},{"issue":"12","key":"98_CR4","first-page":"1247","volume":"41","author":"Yu.E. Gorbachev","year":"1996","unstructured":"Yu.E. Gorbachev, M.A. Zatevakhin, I.D. Kaganovich. Simulation of the growth of hydrogenated amorphous silicon films from an rf plasma. Tech. Phys. V. 41, N 12, 1996, pp. 1247\u20131258","journal-title":"Tech. Phys."},{"key":"98_CR5","unstructured":"S.K. Godunov, V.S. Riabenkii. Difference schemes. Moscow, Nauka, 1973"},{"issue":"6","key":"98_CR6","doi-asserted-by":"publisher","first-page":"1570","DOI":"10.2514\/3.11102","volume":"30","author":"J.Y. Yang","year":"1992","unstructured":"Yang J.Y., Hsu C.A. High-Resolution, Nonoscillatory Schemes for Unsteady Compressible Flows. AIAA J., V. 30, N 6, 1992, pp. 1570\u20131575","journal-title":"AIAA J."},{"key":"98_CR7","doi-asserted-by":"crossref","unstructured":"F. Casier, H. Deconinck, Ch. Hirsch. A class of bidiagonal schemes for solving the Euler Equations. AIAA J. V. 22, N 11, pp. 1556\u20131563","DOI":"10.2514\/3.8818"},{"issue":"8","key":"98_CR8","first-page":"107","volume":"13","author":"A.A. Ignatiev","year":"2001","unstructured":"A.A. Ignatiev. A difference scheme for the viscous part of Navier-Stokes equations. Mathematical modeling v. 13, N 8, 2001, pp. 107\u2013116 (in Russian)","journal-title":"Mathematical modeling"},{"key":"98_CR9","first-page":"101","volume":"12","author":"A.A. Ignatiev","year":"2000","unstructured":"A.A. Ignatiev. Regular grid generation with mechanical approach. Mathematical Modeling, V. 12, N 2, 2000, pp. 101\u2013105 (in Russian)","journal-title":"Mathematical Modeling"},{"key":"98_CR10","doi-asserted-by":"publisher","first-page":"2060","DOI":"10.1063\/1.366016","volume":"82","author":"G.J. Nienhuis","year":"1997","unstructured":"G.J. Nienhuis, W.J. Goedheer, E.A.G. Hamers, W.G.J.H.M. van Sark, and J. Beze-mer, A self-consistent fluid model for RF dischargdes in SiH4-H2 compared to experiments. J. Appl. Phys. V. 82, 1997, pp. 2060\u20132071","journal-title":"J. Appl. Phys."},{"issue":"8","key":"98_CR11","doi-asserted-by":"publisher","first-page":"1032","DOI":"10.1134\/1.1307013","volume":"45","author":"Yu.E. Gorbachev","year":"2000","unstructured":"Yu.E. Gorbachev, M.A. Zatevakhin, V.V. Krzhizhanovskaya, V.A. Schweigert. Special Features of the Growth of Hydrogenated Amorphous Silicon in PECVD reactors. Tech. Phys. V. 45 N 8, 2000, pp. 1032\u20131041","journal-title":"Tech. Phys."},{"key":"98_CR12","unstructured":"http:\/\/www.science.uva.nl\/research\/scs\/Software\/"}],"container-title":["Lecture Notes in Computer Science","Parallel Processing and Applied Mathematics"],"original-title":[],"link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/3-540-48086-2_98","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,2,17]],"date-time":"2019-02-17T00:48:14Z","timestamp":1550364494000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/3-540-48086-2_98"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2002]]},"ISBN":["9783540437925","9783540480860"],"references-count":12,"URL":"https:\/\/doi.org\/10.1007\/3-540-48086-2_98","relation":{},"ISSN":["0302-9743","1611-3349"],"issn-type":[{"value":"0302-9743","type":"print"},{"value":"1611-3349","type":"electronic"}],"subject":[],"published":{"date-parts":[[2002]]}}}