{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,25]],"date-time":"2025-03-25T19:37:02Z","timestamp":1742931422326,"version":"3.40.3"},"publisher-location":"Cham","reference-count":14,"publisher":"Springer International Publishing","isbn-type":[{"type":"print","value":"9783030106911"},{"type":"electronic","value":"9783030106928"}],"license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019]]},"DOI":"10.1007\/978-3-030-10692-8_32","type":"book-chapter","created":{"date-parts":[[2019,1,17]],"date-time":"2019-01-17T13:53:20Z","timestamp":1547733200000},"page":"290-297","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Microscopic KMC Modeling of Oxide RRAMs"],"prefix":"10.1007","author":[{"given":"Toufik","family":"Sadi","sequence":"first","affiliation":[]},{"given":"Asen","family":"Asenov","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2019,1,18]]},"reference":[{"key":"32_CR1","unstructured":"The ITRS Report 2013. \n                      http:\/\/www.itrs2.net\/2013-itrs.html\n                      \n                    . Accessed 5 June 2018"},{"issue":"43","key":"32_CR2","doi-asserted-by":"publisher","first-page":"18030","DOI":"10.1039\/C5NR04982B","volume":"7","author":"M Buckwell","year":"2015","unstructured":"Buckwell, M., Montesi, L., Hudziak, S., Mehonic, A., Kenyon, A.J.: Conductance tomography of conductive filaments in intrinsic silicon-rich silica RRAM. Nanoscale 7(43), 18030\u201318035 (2015)","journal-title":"Nanoscale"},{"issue":"8","key":"32_CR3","doi-asserted-by":"publisher","first-page":"084005","DOI":"10.1088\/1361-648X\/aaa7c1","volume":"30","author":"T Sadi","year":"2018","unstructured":"Sadi, T., Mehonic, A., Montesi, L., Buckwell, M., Kenyon, A., Asenov, A.: Investigation of resistance switching in SiO\n                      \n                        \n                      \n                      $$_x$$\n                     RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator. J. Phys. Condens. Matter 30(8), 084005 (2018)","journal-title":"J. Phys. Condens. Matter"},{"key":"32_CR4","doi-asserted-by":"crossref","unstructured":"Sadi, T., et al.: Advanced physical modeling of SiO\n                      \n                        \n                      \n                      $$_x$$\n                     resistive random access memories. In: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2016), 6\u20138 September 2016, Nuremberg, Germany, pp. 149\u2013152 (2016)","DOI":"10.1109\/SISPAD.2016.7605169"},{"key":"32_CR5","doi-asserted-by":"publisher","first-page":"1154","DOI":"10.1002\/adma.200702024","volume":"20","author":"SC Chae","year":"2008","unstructured":"Chae, S.C., et al.: Random circuit breaker network model for unipolar resistance switching. Adv. Mater. 20, 1154\u20131159 (2008)","journal-title":"Adv. Mater."},{"issue":"4","key":"32_CR6","doi-asserted-by":"publisher","first-page":"1154","DOI":"10.1007\/s10825-017-1055-y","volume":"16","author":"S Brivio","year":"2017","unstructured":"Brivio, S., Spiga, S.: Stochastic circuit breaker network model for bipolar resistance switching memories. J. Comput. Electron. 16(4), 1154\u20131166 (2017)","journal-title":"J. Comput. Electron."},{"key":"32_CR7","doi-asserted-by":"crossref","unstructured":"Yu, S., Guan, X., Wong, H.-S.P.: On the stochastic nature of resistive switching in metal oxide RRAM: physical modeling, Monte Carlo simulation, and experimental characterization. In: 2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 5\u20137 December 2011, p. 17.3.1 (2011)","DOI":"10.1109\/IEDM.2011.6131572"},{"key":"32_CR8","doi-asserted-by":"publisher","first-page":"1680","DOI":"10.1038\/srep01680","volume":"3","author":"S Kim","year":"2013","unstructured":"Kim, S., et al.: Physical electro-thermal model of resistive switching in bi-layered resistance-change memory. Sci. Rep. 3, 1680 (2013)","journal-title":"Sci. Rep."},{"key":"32_CR9","unstructured":"Jegert, G.C.: Modeling of leakage currents in high-k dielectrics. PhD Dissertation, Technical University Munich, Germany (2011). \n                      http:\/\/www.iaea.org\/inis\/collection\/NCLCollectionStore\/_Public\/44\/011\/44011419.pdf\n                      \n                    . Accessed 5 June 2018"},{"key":"32_CR10","doi-asserted-by":"publisher","first-page":"2878","DOI":"10.1109\/TED.2011.2158825","volume":"58","author":"L Vandelli","year":"2011","unstructured":"Vandelli, L., Padovani, A., Larcher, L., Southwick, R.G., Knowlton, W.B., Bersuker, G.: A physical model of the temperature dependence of the current through SiO2\/HfO2 stacks. IEEE Trans. Electron. Devices 58, 2878\u20132887 (2011)","journal-title":"IEEE Trans. Electron. Devices"},{"key":"32_CR11","doi-asserted-by":"publisher","first-page":"074507","DOI":"10.1063\/1.3701581","volume":"111","author":"A Mehonic","year":"2012","unstructured":"Mehonic, A., et al.: Resistive switching in silicon sub-oxide films. J. Appl. Phys. 111, 074507 (2012)","journal-title":"J. Appl. Phys."},{"key":"32_CR12","doi-asserted-by":"publisher","first-page":"124505","DOI":"10.1063\/1.4916259","volume":"117","author":"A Mehonic","year":"2015","unstructured":"Mehonic, A., et al.: Structural changes and conductance thresholds in metal-free intrinsic SiO\n                      \n                        \n                      \n                      $$_x$$\n                     resistive random access memory. J. Appl. Phys. 117, 124505 (2015)","journal-title":"J. Appl. Phys."},{"key":"32_CR13","doi-asserted-by":"publisher","first-page":"2121","DOI":"10.1063\/1.1565180","volume":"82","author":"J McPherson","year":"2003","unstructured":"McPherson, J., Kim, J.-Y., Shanware, A., Mogul, H.: Thermochemical description of dielectric breakdown in high dielectric constant materials. Appl. Phys. Lett. 82, 2121\u20132123 (2003)","journal-title":"Appl. Phys. Lett."},{"key":"32_CR14","doi-asserted-by":"publisher","first-page":"084506","DOI":"10.1063\/1.3496658","volume":"108","author":"T Sadi","year":"2010","unstructured":"Sadi, T., Thobel, J.-L., Dessenne, F.: Self-consistent electrothermal Monte Carlo simulation of single InAs nanowire channel metal-insulator field-effect transistors. J. Appl. Phys. 108, 084506 (2010)","journal-title":"J. Appl. Phys."}],"container-title":["Lecture Notes in Computer Science","Numerical Methods and Applications"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-030-10692-8_32","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,5,20]],"date-time":"2019-05-20T05:27:48Z","timestamp":1558330068000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-3-030-10692-8_32"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"ISBN":["9783030106911","9783030106928"],"references-count":14,"URL":"https:\/\/doi.org\/10.1007\/978-3-030-10692-8_32","relation":{},"ISSN":["0302-9743","1611-3349"],"issn-type":[{"type":"print","value":"0302-9743"},{"type":"electronic","value":"1611-3349"}],"subject":[],"published":{"date-parts":[[2019]]},"assertion":[{"value":"18 January 2019","order":1,"name":"first_online","label":"First Online","group":{"name":"ChapterHistory","label":"Chapter History"}},{"value":"NMA","order":1,"name":"conference_acronym","label":"Conference Acronym","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"International Conference on Numerical Methods and Applications","order":2,"name":"conference_name","label":"Conference Name","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"Borovets","order":3,"name":"conference_city","label":"Conference City","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"Bulgaria","order":4,"name":"conference_country","label":"Conference Country","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"2018","order":5,"name":"conference_year","label":"Conference Year","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"20 August 2018","order":7,"name":"conference_start_date","label":"Conference Start Date","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"24 August 2018","order":8,"name":"conference_end_date","label":"Conference End Date","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"9","order":9,"name":"conference_number","label":"Conference Number","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"nma2018","order":10,"name":"conference_id","label":"Conference ID","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"https:\/\/nma18.fmi.uni-sofia.bg\/","order":11,"name":"conference_url","label":"Conference URL","group":{"name":"ConferenceInfo","label":"Conference Information"}}]}}