{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,25]],"date-time":"2025-03-25T15:41:31Z","timestamp":1742917291839,"version":"3.40.3"},"publisher-location":"Cham","reference-count":27,"publisher":"Springer International Publishing","isbn-type":[{"type":"print","value":"9783030410315"},{"type":"electronic","value":"9783030410322"}],"license":[{"start":{"date-parts":[[2020,1,1]],"date-time":"2020-01-01T00:00:00Z","timestamp":1577836800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2020]]},"DOI":"10.1007\/978-3-030-41032-2_50","type":"book-chapter","created":{"date-parts":[[2020,2,13]],"date-time":"2020-02-13T22:02:28Z","timestamp":1581631348000},"page":"438-445","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Multi-Subband Ensemble Monte Carlo Simulator for Nanodevices in the End of the Roadmap"],"prefix":"10.1007","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8730-2594","authenticated-orcid":false,"given":"Carlos","family":"Sampedro","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-4280-3149","authenticated-orcid":false,"given":"Cristina","family":"Medina-Bailon","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5189-867X","authenticated-orcid":false,"given":"Luca","family":"Donetti","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2082-5304","authenticated-orcid":false,"given":"Jose Luis","family":"Padilla","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-7846-4599","authenticated-orcid":false,"given":"Carlos","family":"Navarro","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0003-0159-9951","authenticated-orcid":false,"given":"Carlos","family":"Marquez","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"ORCID":"https:\/\/orcid.org\/0000-0002-5072-7924","authenticated-orcid":false,"given":"Francisco","family":"Gamiz","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2020,2,13]]},"reference":[{"issue":"7","key":"50_CR1","doi-asserted-by":"publisher","first-page":"1141","DOI":"10.1016\/S0038-1101(03)00030-3","volume":"47","author":"A Asenov","year":"2003","unstructured":"Asenov, A., Brown, A.R., Watling, J.R.: Quantum corrections in the simulation of decanano MOSFETs. Solid State Electron. 47(7), 1141\u20131145 (2003)","journal-title":"Solid State Electron."},{"key":"50_CR2","doi-asserted-by":"publisher","DOI":"10.1007\/978-0-387-71752-4","volume-title":"FinFETs and Other Multi-Gate Transistors","author":"JP Colinge","year":"2007","unstructured":"Colinge, J.P.: FinFETs and Other Multi-Gate Transistors. Springer, New York (2007). https:\/\/doi.org\/10.1007\/978-0-387-71752-4"},{"key":"50_CR3","unstructured":"Diaz-Llorente, C., Sampedro, C., Gamiz, F., Godoy, A., Donetti, L.: Impact of S\/D doping profile into electrical properties in nanoscaled UTB2SOI devices. In: Proceedings of EUROSOI 2014, O06 (2014)"},{"issue":"9","key":"50_CR4","doi-asserted-by":"publisher","first-page":"849","DOI":"10.1016\/j.sse.2010.04.009","volume":"54","author":"C Fenouillet-Beranger","year":"2010","unstructured":"Fenouillet-Beranger, C., et al.: Impact of a 10 nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32 nm node and below. Solid-State Electron. 54(9), 849\u2013854 (2010)","journal-title":"Solid-State Electron."},{"key":"50_CR5","doi-asserted-by":"publisher","first-page":"59","DOI":"10.1023\/A:1020763710906","volume":"1","author":"D Ferry","year":"2002","unstructured":"Ferry, D., Ramey, S., Shifren, L., Akis, R.: The effective potential in device modeling: the good, the bad and the ugly. J. Comput. Electron. 1, 59\u201365 (2002)","journal-title":"J. Comput. Electron."},{"issue":"7320","key":"50_CR6","doi-asserted-by":"publisher","first-page":"7320","DOI":"10.1063\/1.1521796","volume":"92","author":"MV Fischetti","year":"2002","unstructured":"Fischetti, M.V., Gamiz, F., H\u00e4nsch, W.: On the enhanced electron mobility in strained-silicon inversion layers. J. Appl. Phys. 92(7320), 7320\u20137324 (2002). https:\/\/doi.org\/10.1063\/1.1521796","journal-title":"J. Appl. Phys."},{"issue":"4","key":"50_CR7","doi-asserted-by":"publisher","first-page":"2244","DOI":"10.1103\/PhysRevB.48.2244","volume":"48","author":"MV Fischetti","year":"1993","unstructured":"Fischetti, M.V., Laux, S.: Monte Carlo study of electron transport in silicon inversion layers. Phys. Rev. B 48(4), 2244\u20132274 (1993)","journal-title":"Phys. Rev. B"},{"issue":"6","key":"50_CR8","doi-asserted-by":"publisher","first-page":"063704","DOI":"10.1063\/1.2975993","volume":"104","author":"F Jim\u00e9nez-Molinos","year":"2008","unstructured":"Jim\u00e9nez-Molinos, F., Gamiz, F., Donetti, L.: Coulomb scattering in high-$$\\kappa $$ gate stack silicon-on-insulator metal-oxide-semiconductor field effect transistors. J. Appl. Phys. 104(6), 063704 (2008). https:\/\/doi.org\/10.1063\/1.2975993","journal-title":"J. Appl. Phys."},{"key":"50_CR9","doi-asserted-by":"crossref","unstructured":"Khakifirooz, A., et al.: Fully depleted extremely thin SOI for mainstream 20 nm low-power technology and beyond. In: 2010 IEEE International on Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp. 152\u2013153, February 2010","DOI":"10.1109\/ISSCC.2010.5434014"},{"key":"50_CR10","doi-asserted-by":"crossref","unstructured":"Kuhn, K., Liu, M., Kennel, H.: Technology options for 22 nm and beyond. In: 2010 International Workshop on Junction Technology (IWJT), pp. 1\u20136, May 2010","DOI":"10.1109\/IWJT.2010.5475000"},{"issue":"8","key":"50_CR11","doi-asserted-by":"publisher","first-page":"2640","DOI":"10.1109\/TED.2014.2327255","volume":"61","author":"A Mangla","year":"2014","unstructured":"Mangla, A., Sallese, J.M., Sampedro, C., Gamiz, F., Enz, C.: Modeling the channel charge and potential in quasi-ballistic nanoscale double-gate MOSFETs. IEEE Trans. Electron Devices 61(8), 2640\u20132646 (2014)","journal-title":"IEEE Trans. Electron Devices"},{"key":"50_CR12","doi-asserted-by":"publisher","first-page":"232","DOI":"10.1016\/j.sse.2015.08.013","volume":"115","author":"C Medina-Bailon","year":"2016","unstructured":"Medina-Bailon, C., Sampedro, C., Gamiz, F., Godoy, A., Donetti, L.: Impact of non uniform strain configuration on transport properties for FD14+ devices. Solid-State Electron. 115, 232\u2013236 (2016)","journal-title":"Solid-State Electron."},{"key":"50_CR13","doi-asserted-by":"publisher","unstructured":"Medina-Bailon, C., et al.: MS-EMC vs. NEGF: a comparative study accounting for transport quantum corrections. In: 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), pp. 1\u20134. IEEE, March 2018. https:\/\/doi.org\/10.1109\/ulis.2018.8354758","DOI":"10.1109\/ulis.2018.8354758"},{"key":"50_CR14","doi-asserted-by":"publisher","unstructured":"Medina-Bailon, C., et al.: Multi-subband ensemble Monte Carlo study of tunneling leakage mechanisms. In: 2017 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 281\u2013284. IEEE, September 2017. https:\/\/doi.org\/10.23919\/sispad.2017.8085319","DOI":"10.23919\/sispad.2017.8085319"},{"issue":"8","key":"50_CR15","doi-asserted-by":"publisher","first-page":"3084","DOI":"10.1109\/ted.2017.2715403","volume":"64","author":"C Medina-Bailon","year":"2017","unstructured":"Medina-Bailon, C., Padilla, J.L., Sampedro, C., Alper, C., Gamiz, F., Ionescu, A.M.: Implementation of band-to-band tunneling phenomena in a multisubband ensemble Monte Carlo simulator: application to silicon TFETs. IEEE Trans. Electron Devices 64(8), 3084\u20133091 (2017). https:\/\/doi.org\/10.1109\/ted.2017.2715403","journal-title":"IEEE Trans. Electron Devices"},{"issue":"11","key":"50_CR16","doi-asserted-by":"publisher","first-page":"4740","DOI":"10.1109\/ted.2018.2867721","volume":"65","author":"C Medina-Bailon","year":"2018","unstructured":"Medina-Bailon, C., Padilla, J.L., Sampedro, C., Godoy, A., Donetti, L., Gamiz, F.: Source-to-drain tunneling analysis in FDSOI, DGSOI, and FinFET devices by means of multisubband ensemble Monte Carlo. IEEE Trans. Electron Devices 65(11), 4740\u20134746 (2018). https:\/\/doi.org\/10.1109\/ted.2018.2867721","journal-title":"IEEE Trans. Electron Devices"},{"key":"50_CR17","series-title":"Lecture Notes in Computer Science","doi-asserted-by":"publisher","first-page":"273","DOI":"10.1007\/978-3-030-10692-8_30","volume-title":"Numerical Methods and Applications","author":"C Medina-Bailon","year":"2019","unstructured":"Medina-Bailon, C., et al.: Impact of the trap attributes on the gate leakage mechanisms in a 2D MS-EMC nanodevice simulator. In: Nikolov, G., Kolkovska, N., Georgiev, K. (eds.) NMA 2018. LNCS, vol. 11189, pp. 273\u2013280. Springer, Cham (2019). https:\/\/doi.org\/10.1007\/978-3-030-10692-8_30"},{"issue":"8","key":"50_CR18","doi-asserted-by":"publisher","first-page":"946","DOI":"10.1109\/LED.2008.2001030","volume":"29","author":"C Millar","year":"2008","unstructured":"Millar, C., Reid, D., Roy, G., Roy, S., Asenov, A.: Accurate statistical description of random dopant-induced threshold voltage variability. IEEE Electron Device Lett. 29(8), 946\u2013948 (2008)","journal-title":"IEEE Electron Device Lett."},{"key":"50_CR19","doi-asserted-by":"crossref","unstructured":"Riolino, I., et al.: Monte-Carlo simulation of decananometric double-gate SOI devices: multi-subband vs. 3D-electron gas with quantum corrections. In: Proceedings of the 36th European Solid-State Device Research Conference, ESSDERC 2006, Montreux (2006)","DOI":"10.1109\/ESSDER.2006.307663"},{"issue":"4","key":"50_CR20","doi-asserted-by":"publisher","first-page":"29","DOI":"10.1088\/0268-1242\/21\/4\/L01","volume":"21","author":"J Saint-Martin","year":"2006","unstructured":"Saint-Martin, J., Bournel, A., Monsef, F., Chassat, C., Dollfus, P.: Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas. Semicond. Sci. Tech. 21(4), 29\u201331 (2006)","journal-title":"Semicond. Sci. Tech."},{"issue":"2","key":"50_CR21","doi-asserted-by":"publisher","first-page":"131","DOI":"10.1016\/j.sse.2009.12.007","volume":"54","author":"C Sampedro","year":"2010","unstructured":"Sampedro, C., G\u00e1miz, F., Godoy, A., Val\u00edn, R., Garc\u00eda-Loureiro, A., Ruiz, F.: Multi-subband Monte Carlo study of device orientation effects in ultra-short channel DGSOI. Solid-State Electron. 54(2), 131\u2013136 (2010)","journal-title":"Solid-State Electron."},{"key":"50_CR22","doi-asserted-by":"publisher","unstructured":"Sampedro, C., Gamiz, F., Godoy, A., Valin, R., Garcia-Loureiro, A.: Improving subthreshold MSB-EMC simulations by dynamic particle weighting. In: 2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 276\u2013279. IEEE, September 2013. https:\/\/doi.org\/10.1109\/sispad.2013.6650628","DOI":"10.1109\/sispad.2013.6650628"},{"issue":"11","key":"50_CR23","doi-asserted-by":"publisher","first-page":"2703","DOI":"10.1109\/TED.2006.882782","volume":"53","author":"C Sampedro-Matarin","year":"2006","unstructured":"Sampedro-Matarin, C., Gamiz, F.J., Godoy, A., Garcia-Ruiz, F.: The multivalley effective conduction band-edge method for Monte Carlo simulation of nanoscale structures. IEEE Trans. Electron Devices 53(11), 2703\u20132710 (2006)","journal-title":"IEEE Trans. Electron Devices"},{"key":"50_CR24","doi-asserted-by":"publisher","first-page":"35","DOI":"10.1007\/s10825-005-7103-z","volume":"4","author":"H Tsuchiya","year":"2005","unstructured":"Tsuchiya, H., Svizhenko, A., Anatram, M.P., Ogawa, M., Miyoshi, T.: Comparison of non-equilibrium Green\u2019s function and quantum-corrected Monte Carlo approaches in nano-MOS simulation. J. Comput. Electron. 4, 35\u201338 (2005)","journal-title":"J. Comput. Electron."},{"issue":"9","key":"50_CR25","doi-asserted-by":"publisher","first-page":"1703","DOI":"10.1016\/j.camwa.2014.02.021","volume":"67","author":"F Vecil","year":"2014","unstructured":"Vecil, F., Mantas, J.M., Caceres, M.J., Sampedro, C., Godoy, A., Gamiz, F.: A parallel deterministic solver for the Schr\u00f6dinger-Poisson-Boltzmann system in ultra-short DG-MOSFETs: comparison with Monte-Carlo. Comput. Math. Appl. 67(9), 1703\u20131721 (2014). https:\/\/doi.org\/10.1016\/j.camwa.2014.02.021","journal-title":"Comput. Math. Appl."},{"issue":"7","key":"50_CR26","doi-asserted-by":"publisher","first-page":"3730","DOI":"10.1063\/1.1503165","volume":"92","author":"R Venugopal","year":"2002","unstructured":"Venugopal, R., Ren, Z., Datta, S., Lundstrom, M.S., Jovanovic, D.: Simulating quantum transport in nanoscale transistors: real versus mode-space approaches. J. Appl. Phys. 92(7), 3730\u20133739 (2002). https:\/\/doi.org\/10.1063\/1.1503165","journal-title":"J. Appl. Phys."},{"issue":"2.3","key":"50_CR27","doi-asserted-by":"publisher","first-page":"133","DOI":"10.1147\/rd.462.0133","volume":"46","author":"HSP Wong","year":"2002","unstructured":"Wong, H.S.P.: Beyond the conventional transistor. IBM J. Res. Dev. 46(2.3), 133\u2013168 (2002). https:\/\/doi.org\/10.1147\/rd.462.0133","journal-title":"IBM J. Res. Dev."}],"container-title":["Lecture Notes in Computer Science","Large-Scale Scientific Computing"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-030-41032-2_50","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,12,9]],"date-time":"2020-12-09T16:39:49Z","timestamp":1607531989000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-3-030-41032-2_50"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020]]},"ISBN":["9783030410315","9783030410322"],"references-count":27,"URL":"https:\/\/doi.org\/10.1007\/978-3-030-41032-2_50","relation":{},"ISSN":["0302-9743","1611-3349"],"issn-type":[{"type":"print","value":"0302-9743"},{"type":"electronic","value":"1611-3349"}],"subject":[],"published":{"date-parts":[[2020]]},"assertion":[{"value":"13 February 2020","order":1,"name":"first_online","label":"First Online","group":{"name":"ChapterHistory","label":"Chapter History"}},{"value":"LSSC","order":1,"name":"conference_acronym","label":"Conference Acronym","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"International Conference on Large-Scale Scientific Computing","order":2,"name":"conference_name","label":"Conference Name","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"Sozopol","order":3,"name":"conference_city","label":"Conference City","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"Bulgaria","order":4,"name":"conference_country","label":"Conference Country","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"2019","order":5,"name":"conference_year","label":"Conference Year","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"10 June 2019","order":7,"name":"conference_start_date","label":"Conference Start Date","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"14 June 2019","order":8,"name":"conference_end_date","label":"Conference End Date","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"12","order":9,"name":"conference_number","label":"Conference Number","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"lssc2019","order":10,"name":"conference_id","label":"Conference ID","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"http:\/\/parallel.bas.bg\/Conferences\/SciCom19\/index.html","order":11,"name":"conference_url","label":"Conference URL","group":{"name":"ConferenceInfo","label":"Conference Information"}}]}}