{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,11,22]],"date-time":"2025-11-22T11:30:57Z","timestamp":1763811057092,"version":"3.40.5"},"publisher-location":"Cham","reference-count":22,"publisher":"Springer Nature Switzerland","isbn-type":[{"type":"print","value":"9783031215131"},{"type":"electronic","value":"9783031215148"}],"license":[{"start":{"date-parts":[[2022,1,1]],"date-time":"2022-01-01T00:00:00Z","timestamp":1640995200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2022,1,1]],"date-time":"2022-01-01T00:00:00Z","timestamp":1640995200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2022]]},"DOI":"10.1007\/978-3-031-21514-8_39","type":"book-chapter","created":{"date-parts":[[2022,12,16]],"date-time":"2022-12-16T13:23:13Z","timestamp":1671196993000},"page":"478-485","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Resistive Switching Behavior of TiO2\/(PVP:MoS2) Nanocomposite Bilayer Hybrid RRAM"],"prefix":"10.1007","author":[{"given":"Shalu","family":"Saini","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-6653-0344","authenticated-orcid":false,"given":"Anil","family":"Lodhi","sequence":"additional","affiliation":[]},{"given":"Anurag","family":"Dwivedi","sequence":"additional","affiliation":[]},{"given":"Arpit","family":"Khandelwal","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8907-6113","authenticated-orcid":false,"given":"Shree Prakash","family":"Tiwari","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2022,12,17]]},"reference":[{"key":"39_CR1","doi-asserted-by":"publisher","first-page":"1800143","DOI":"10.1002\/aelm.201800143","volume":"5","author":"M Lanza","year":"2019","unstructured":"Lanza, M., et al.: Recommended methods to study resistive switching devices. Adv. Electron. Mater. 5, 1800143 (2019)","journal-title":"Adv. Electron. Mater."},{"issue":"6","key":"39_CR2","doi-asserted-by":"publisher","first-page":"1951","DOI":"10.1109\/JPROC.2012.2190369","volume":"100","author":"HSP Wong","year":"2012","unstructured":"Wong, H.S.P., et al.: Metal-oxide RRAM. Proc. IEEE 100(6), 1951\u20131970 (2012)","journal-title":"Proc. IEEE"},{"issue":"1","key":"39_CR3","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1186\/s11671-020-03299-9","volume":"15","author":"F Zahoor","year":"2020","unstructured":"Zahoor, F., Azni Zulkifli, T.Z., Khanday, F.A.: Resistive Random Access Memory (RRAM): an Overview of Materials, Switching Mechanism, Performance, Multilevel Cell (mlc) Storage, Modeling, and Applications. Nanoscale Res. Lett. 15(1), 1\u201326 (2020). https:\/\/doi.org\/10.1186\/s11671-020-03299-9","journal-title":"Nanoscale Res. Lett."},{"key":"39_CR4","doi-asserted-by":"publisher","first-page":"2x","DOI":"10.1063\/1.4958672","volume":"120","author":"M Trapatseli","year":"2016","unstructured":"Trapatseli, M., et al.: Engineering the switching dynamics of TiOx-based RRAM with Al doping. J. Appl. Phys. 120, 2x (2016)","journal-title":"J. Appl. Phys."},{"key":"39_CR5","doi-asserted-by":"publisher","first-page":"4","DOI":"10.1088\/1361-6439\/ac521f","volume":"32","author":"A Lodhi","year":"2022","unstructured":"Lodhi, A., et al.: Bipolar resistive switching properties of TiO x\/graphene oxide doped PVP based bilayer ReRAM. J. Micromech. Microeng. 32, 4 (2022)","journal-title":"J. Micromech. Microeng."},{"key":"39_CR6","doi-asserted-by":"publisher","first-page":"21","DOI":"10.3390\/ma14216275","volume":"14","author":"S Jin","year":"2021","unstructured":"Jin, S., Kwon, J.D., Kim, Y.: Statistical analysis of uniform switching characteristics of Ta2O5-based memristors by embedding in-situ grown 2D-MoS2 buffer layers. Materials (Basel) 14, 21 (2021)","journal-title":"Materials (Basel)"},{"key":"39_CR7","doi-asserted-by":"publisher","first-page":"7","DOI":"10.3390\/mi10070446","volume":"10","author":"Z Shen","year":"2019","unstructured":"Shen, Z., et al.: Effect of annealing temperature for Ni\/AlOx\/Pt RRAM devices fabricated with solution-based dielectric. Micromachines 10, 7 (2019)","journal-title":"Micromachines"},{"key":"39_CR8","doi-asserted-by":"publisher","first-page":"136","DOI":"10.1016\/j.tsf.2018.08.042","volume":"664","author":"JC Li","year":"2018","unstructured":"Li, J.C., Zhang, C., Shao, S.J.: Effect of bottom electrode materials on resistive switching of flexible poly(N-vinylcarbazole) film embedded with TiO2 nanoparticles. Thin Solid Films 664, 136\u2013142 (2018)","journal-title":"Thin Solid Films"},{"key":"39_CR9","doi-asserted-by":"publisher","first-page":"36195","DOI":"10.1038\/srep36195","volume":"6","author":"MM Rehman","year":"2016","unstructured":"Rehman, M.M., et al.: Resistive switching in all-printed, flexible and hybrid MoS2-PVA nanocomposite based memristive device fabricated by reverse offset. Sci. Rep. 6, 36195 (2016)","journal-title":"Sci. Rep."},{"issue":"25","key":"39_CR10","doi-asserted-by":"publisher","first-page":"14662","DOI":"10.1039\/D0RA00667J","volume":"10","author":"H Zhang","year":"2020","unstructured":"Zhang, H., et al.: Bistable non-volatile resistive memory devices based on ZnO nanoparticles embedded in polyvinylpyrrolidone. RSC Adv. 10(25), 14662\u201314669 (2020)","journal-title":"RSC Adv."},{"issue":"3","key":"39_CR11","doi-asserted-by":"publisher","first-page":"949","DOI":"10.1109\/TED.2020.2964910","volume":"67","author":"I Varun","year":"2020","unstructured":"Varun, I., et al.: High-performance flexible resistive RAM with PVP:GO composite and ultrathin HfOx hybrid bilayer. IEEE Trans. Electron Devic. 67(3), 949\u2013954 (2020)","journal-title":"IEEE Trans. Electron Devic."},{"issue":"8","key":"39_CR12","doi-asserted-by":"publisher","first-page":"3472","DOI":"10.1109\/TED.2020.3003854","volume":"67","author":"I Varun","year":"2020","unstructured":"Varun, I., et al.: Ultralow current switching in flexible hybrid PVP:MoS2\/HfOx bilayer devices. IEEE Trans. Electron Devic. 67(8), 3472\u20133477 (2020)","journal-title":"IEEE Trans. Electron Devic."},{"key":"39_CR13","doi-asserted-by":"publisher","first-page":"3","DOI":"10.1002\/aelm.202100905","volume":"8","author":"J Jian","year":"2022","unstructured":"Jian, J., et al.: Low-operating-voltage resistive switching memory based on the interlayer-spacing regulation of MoSe2. Adv. Electron. Mater. 8, 3 (2022)","journal-title":"Adv. Electron. Mater."},{"key":"39_CR14","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1038\/s41598-018-37186-2","volume":"9","author":"JH Lee","year":"2019","unstructured":"Lee, J.H., et al.: Highly flexible and stable resistive switching devices based on WS2 nanosheets:poly(methylmethacrylate) nanocomposites. Sci. Rep. 9, 1 (2019)","journal-title":"Sci. Rep."},{"key":"39_CR15","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1088\/2043-6262\/7\/1\/015017","volume":"7","author":"KN Pham","year":"2016","unstructured":"Pham, K.N., et al.: TiO2 thin film based transparent flexible resistive switching random access memory. Adv. Nat. Sci. Nanosci. Nanotechnol. 7, 1 (2016)","journal-title":"Adv. Nat. Sci. Nanosci. Nanotechnol."},{"key":"39_CR16","first-page":"2","volume":"14","author":"XF Wang","year":"2018","unstructured":"Wang, X.F., et al.: Interface engineering with MoS2\u2013Pd nanoparticles hybrid structure for a low voltage resistive switching memory. Small 14, 2 (2018)","journal-title":"Small"},{"issue":"15","key":"39_CR17","doi-asserted-by":"publisher","first-page":"2077","DOI":"10.1002\/smll.201503827","volume":"12","author":"P Zhang","year":"2016","unstructured":"Zhang, P., et al.: Structural phase transition effect on resistive switching behavior of MoS2-polyvinylpyrrolidone nanocomposites films for flexible memory devices. Small 12(15), 2077\u20132084 (2016)","journal-title":"Small"},{"issue":"2\u20133","key":"39_CR18","doi-asserted-by":"publisher","first-page":"165","DOI":"10.1016\/0038-1101(61)90034-X","volume":"2","author":"GT Wright","year":"1961","unstructured":"Wright, G.T.: Mechanisms of space-charge-limited current in solids. Solid State Electron. 2(2\u20133), 165\u2013189 (1961)","journal-title":"Solid State Electron."},{"issue":"44","key":"39_CR19","doi-asserted-by":"publisher","first-page":"29978","DOI":"10.1039\/C5CP05481H","volume":"17","author":"Y Sun","year":"2015","unstructured":"Sun, Y., et al.: Resistive switching memory devices based on electrical conductance tuning in poly(4-vinyl phenol)-oxadiazole composites. Phys. Chem. Chem. Phys. 17(44), 29978\u201329984 (2015)","journal-title":"Phys. Chem. Chem. Phys."},{"key":"39_CR20","doi-asserted-by":"publisher","first-page":"23","DOI":"10.1063\/1.4953197","volume":"108","author":"G Vyas","year":"2016","unstructured":"Vyas, G., Dagar, P., Sahu, S.: A complementary switching mechanism for organic memory devices to regulate the conductance of binary states. Appl. Phys. Lett. 108, 23 (2016)","journal-title":"Appl. Phys. Lett."},{"key":"39_CR21","doi-asserted-by":"publisher","first-page":"12","DOI":"10.1063\/1.4994227","volume":"7","author":"Z Wu","year":"2017","unstructured":"Wu, Z., et al.: Resistive switching effect of N-doped MoS2-PVP nanocomposites films for nonvolatile memory devices. AIP Adv. 7, 12 (2017)","journal-title":"AIP Adv."},{"key":"39_CR22","doi-asserted-by":"publisher","first-page":"196","DOI":"10.1016\/j.ssi.2018.08.003","volume":"325","author":"I Varun","year":"2018","unstructured":"Varun, I., et al.: Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM. Solid State Ion. 325, 196\u2013200 (2018)","journal-title":"Solid State Ion."}],"container-title":["Communications in Computer and Information Science","VLSI Design and Test"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-031-21514-8_39","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,12,16]],"date-time":"2022-12-16T13:25:17Z","timestamp":1671197117000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/978-3-031-21514-8_39"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022]]},"ISBN":["9783031215131","9783031215148"],"references-count":22,"URL":"https:\/\/doi.org\/10.1007\/978-3-031-21514-8_39","relation":{},"ISSN":["1865-0929","1865-0937"],"issn-type":[{"type":"print","value":"1865-0929"},{"type":"electronic","value":"1865-0937"}],"subject":[],"published":{"date-parts":[[2022]]},"assertion":[{"value":"17 December 2022","order":1,"name":"first_online","label":"First Online","group":{"name":"ChapterHistory","label":"Chapter History"}},{"value":"VDAT","order":1,"name":"conference_acronym","label":"Conference Acronym","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"International Symposium on VLSI Design and Test","order":2,"name":"conference_name","label":"Conference Name","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"Jammu","order":3,"name":"conference_city","label":"Conference City","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"India","order":4,"name":"conference_country","label":"Conference Country","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"2022","order":5,"name":"conference_year","label":"Conference Year","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"17 July 2022","order":7,"name":"conference_start_date","label":"Conference Start Date","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"19 July 2022","order":8,"name":"conference_end_date","label":"Conference End Date","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"26","order":9,"name":"conference_number","label":"Conference Number","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"vdat2022","order":10,"name":"conference_id","label":"Conference ID","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"https:\/\/iitjammu.ac.in\/vdat2022\/","order":11,"name":"conference_url","label":"Conference URL","group":{"name":"ConferenceInfo","label":"Conference Information"}},{"value":"Double-blind","order":1,"name":"type","label":"Type","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"Easychair","order":2,"name":"conference_management_system","label":"Conference Management System","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"220","order":3,"name":"number_of_submissions_sent_for_review","label":"Number of Submissions Sent for Review","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"32","order":4,"name":"number_of_full_papers_accepted","label":"Number of Full Papers Accepted","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"16","order":5,"name":"number_of_short_papers_accepted","label":"Number of Short Papers Accepted","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"15% - The value is computed by the equation \"Number of Full Papers Accepted \/ Number of Submissions Sent for Review * 100\" and then rounded to a whole number.","order":6,"name":"acceptance_rate_of_full_papers","label":"Acceptance Rate of Full Papers","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"3","order":7,"name":"average_number_of_reviews_per_paper","label":"Average Number of Reviews per Paper","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"4","order":8,"name":"average_number_of_papers_per_reviewer","label":"Average Number of Papers per Reviewer","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}},{"value":"Yes","order":9,"name":"external_reviewers_involved","label":"External Reviewers Involved","group":{"name":"ConfEventPeerReviewInformation","label":"Peer Review Information (provided by the conference organizers)"}}]}}