{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,8]],"date-time":"2024-09-08T15:24:58Z","timestamp":1725809098779},"publisher-location":"Cham","reference-count":13,"publisher":"Springer International Publishing","isbn-type":[{"type":"print","value":"9783319116280"},{"type":"electronic","value":"9783319116297"}],"license":[{"start":{"date-parts":[[2014,1,1]],"date-time":"2014-01-01T00:00:00Z","timestamp":1388534400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2014]]},"DOI":"10.1007\/978-3-319-11629-7_11","type":"book-chapter","created":{"date-parts":[[2014,11,14]],"date-time":"2014-11-14T10:24:01Z","timestamp":1415960641000},"page":"76-81","source":"Crossref","is-referenced-by-count":1,"title":["A New Nanoscale DG MOSFET Design with Enhanced Performance \u2013 A Comparative Study"],"prefix":"10.1007","author":[{"given":"Sushanta Kumar","family":"Mohapatra","sequence":"first","affiliation":[]},{"given":"Kumar Prasannajit","family":"Pradhan","sequence":"additional","affiliation":[]},{"given":"Prasanna Kumar","family":"Sahu","sequence":"additional","affiliation":[]}],"member":"297","reference":[{"key":"11_CR1","doi-asserted-by":"crossref","unstructured":"Das Gupta, A.: Multiple Gate MOSFETs: The Road to the future (2007)","DOI":"10.1109\/IWPSD.2007.4472461"},{"key":"11_CR2","doi-asserted-by":"crossref","unstructured":"Goel, K., Saxena, M., Gupta, M., Gupta, R.S.: Modeling and Simulation of a Nanoscale Three-Region Tri-Material Gate Stack (TRIMGAS) MOSFET for Improved Carrier Transport Efficiency and Reduced Hot-Electron Effects. IEEE Transaction on Electron Devices\u00a053(7) (July 2006)","DOI":"10.1109\/TED.2006.876272"},{"key":"11_CR3","doi-asserted-by":"crossref","unstructured":"Razavi, P., Orouji, A.A.: Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects. In: International Conference on Advances in Electronics and Micro-Electronics, pp. 11\u201314 (2008)","DOI":"10.1109\/ENICS.2008.33"},{"key":"11_CR4","doi-asserted-by":"publisher","first-page":"74508","DOI":"10.1063\/1.3488605","volume":"108","author":"P.K. Tiwari","year":"2010","unstructured":"Tiwari, P.K., Dubey, S., Singh, M., Jit, S.: A two-dimensional analytical model threshold voltage of short-channel triple-material double-gate metal-oxide-semiconductor field-effect-transistors. Journal of Applied Physics\u00a0108, 074508 (2010)","journal-title":"Journal of Applied Physics"},{"key":"11_CR5","first-page":"104","volume":"48","author":"M.-L. Chen","year":"2009","unstructured":"Chen, M.-L., Lin, W.-K., Chen, S.-F.: A New Two-Dimensional Analytical Model for Nanoscale Symmetrical Tri-Material Gate Stack Double Gate Metal-Oxide-Semiconductor Field Effect Transistors. Japanese Journal of Applied Physics\u00a048, 104\u2013503 (2009)","journal-title":"Japanese Journal of Applied Physics"},{"issue":"1","key":"11_CR6","doi-asserted-by":"publisher","first-page":"99","DOI":"10.1109\/TDMR.2004.824359","volume":"4","author":"Chaudhry","year":"2004","unstructured":"Chaudhry, Kumar, M.J.: Controlling short-channel effects in deep submicron SOI MOSFETs for improved reliability: A review. IEEE Trans. Device Mater. Rel.\u00a04(1), 99\u2013109 (2004)","journal-title":"IEEE Trans. Device Mater. Rel."},{"key":"11_CR7","doi-asserted-by":"crossref","unstructured":"Nguyen, B.-Y., Celler, G., Mazur\u00e9, C.: A Review of SOI Technology and its Applications. 01-Nguyen-v4n2-AF 19.08.09 19:28, pp. 51\u201354","DOI":"10.29292\/jics.v4i2.297"},{"issue":"2","key":"11_CR8","doi-asserted-by":"publisher","first-page":"399","DOI":"10.1109\/16.19942","volume":"36","author":"K.K. Young","year":"1989","unstructured":"Young, K.K.: Short-channel effect in fully depleted SOI MOSFETs. IEEE Trans. Electron Devices\u00a036(2), 399\u2013402 (1989)","journal-title":"IEEE Trans. Electron Devices"},{"key":"11_CR9","doi-asserted-by":"crossref","unstructured":"Gupta, S.K., Baidya, A., Baishya, S.: Simulation and Optimization of Lightly-Doped Ultra-Thin Triple Metal Double Gate (TM-DG) MOSFET with High-K Dielectric for Diminished Short Channel Effects. In: International Conference on Computer & Communication Technology, pp. 221\u2013224 (2011)","DOI":"10.1109\/ICCCT.2011.6075167"},{"key":"11_CR10","doi-asserted-by":"crossref","unstructured":"Wong, B.P., Mittal, A., Cao, Y., Starr, G.: Nano-CMOS Circuit and Physical Design. A John Willy &Sons, INC. Publication (2005)","DOI":"10.1002\/0471653829"},{"key":"11_CR11","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1038\/nmat3244","volume":"11","author":"V. Dusastre","year":"2012","unstructured":"Dusastre, V., Heber, J., Pulizzi, F., Stoddart, A., Pamies, P., Martin, C.: The Interface is Still the Device. Nature Materials\u00a011, 91 (2012)","journal-title":"Nature Materials"},{"key":"11_CR12","doi-asserted-by":"crossref","unstructured":"Kasturi, P., Saxena, M., Gupta, M., Gupta, R.S.: Dual-Material Double-Layer Gate Stack SON MOSFET: A Novel Architecture for Enhanced Analog Performance\u2014Part II: Impact of Gate-Dielectric Material Engineering. IEEE Transactions on Electron Devices\u00a055(1) (January 2008)","DOI":"10.1109\/TED.2007.910564"},{"key":"11_CR13","unstructured":"DevicesimulatorATLAS usermanual. Silvaco Int., SantaClara, CA (May 2006), http:\/\/silvaco.com"}],"container-title":["Lecture Notes of the Institute for Computer Sciences, Social Informatics and Telecommunications Engineering","Signal Processing and Information Technology"],"original-title":[],"link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-319-11629-7_11","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,4,22]],"date-time":"2022-04-22T05:07:52Z","timestamp":1650604072000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-3-319-11629-7_11"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2014]]},"ISBN":["9783319116280","9783319116297"],"references-count":13,"URL":"https:\/\/doi.org\/10.1007\/978-3-319-11629-7_11","relation":{},"ISSN":["1867-8211","1867-822X"],"issn-type":[{"type":"print","value":"1867-8211"},{"type":"electronic","value":"1867-822X"}],"subject":[],"published":{"date-parts":[[2014]]}}}