{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,11]],"date-time":"2024-09-11T12:47:24Z","timestamp":1726058844892},"publisher-location":"Cham","reference-count":53,"publisher":"Springer International Publishing","isbn-type":[{"type":"print","value":"9783319763743"},{"type":"electronic","value":"9783319763750"}],"license":[{"start":{"date-parts":[[2019,1,1]],"date-time":"2019-01-01T00:00:00Z","timestamp":1546300800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2019]]},"DOI":"10.1007\/978-3-319-76375-0_18","type":"book-chapter","created":{"date-parts":[[2019,11,12]],"date-time":"2019-11-12T17:03:43Z","timestamp":1573578223000},"page":"527-554","update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics"],"prefix":"10.1007","author":[{"given":"Yuchao","family":"Yang","sequence":"first","affiliation":[]},{"given":"Ke","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2019,11,8]]},"reference":[{"issue":"1","key":"18_CR1","doi-asserted-by":"publisher","first-page":"11","DOI":"10.1038\/35036191","volume":"1","author":"CH Bailey","year":"2000","unstructured":"Bailey, C.H., Giustetto, M., Huang, Y.Y., Hawkins, R.D., Kandel, E.R.: Is heterosynaptic modulation essential for stabilizing Hebbian plasticity and memory. Nat. Rev. Neurosci. 1(1), 11\u201320 (2000)","journal-title":"Nat. Rev. Neurosci."},{"issue":"4","key":"18_CR2","doi-asserted-by":"publisher","first-page":"857","DOI":"10.1007\/s00339-011-6296-1","volume":"102","author":"T Chang","year":"2011","unstructured":"Chang, T., Jo, S.H., Kim, K.H., Sheridan, P., Gaba, S., Lu, W.: Synaptic behaviors and modeling of a metal oxide memristive device. Appl. Phys. A: Mater. Sci. Process. 102(4), 857\u2013863 (2011)","journal-title":"Appl. Phys. A: Mater. Sci. Process."},{"issue":"34","key":"18_CR3","doi-asserted-by":"publisher","first-page":"5028","DOI":"10.1002\/adma.201502758","volume":"27","author":"JY Chen","year":"2015","unstructured":"Chen, J.Y., Huang, C.W., Chiu, C.H., Huang, Y.T., Wu, W.W.: Adv. Mater. 27(34), 5028\u20135033 (2015)","journal-title":"Adv. Mater."},{"issue":"7","key":"18_CR4","doi-asserted-by":"publisher","first-page":"1525","DOI":"10.1021\/jp0265438","volume":"107","author":"O Cherniavskaya","year":"2003","unstructured":"Cherniavskaya, O., Chen, L., Weng, V., Yuditsky, L., Brus, L.E.: Quantitative noncontact electrostatic force imaging of nanocrystal polarizability. J. Phys. Chem. B 107(7), 1525\u20131531 (2003)","journal-title":"J. Phys. Chem. B"},{"issue":"5","key":"18_CR5","doi-asserted-by":"publisher","first-page":"483","DOI":"10.1177\/1073858414529829","volume":"20","author":"M Chistiakova","year":"2014","unstructured":"Chistiakova, M., Bannon, N.M., Bazhenov, M., Volgushev, M.: Heterosynaptic plasticity: multiple mechanisms and multiple roles. Neuroscientist 20(5), 483\u2013498 (2014)","journal-title":"Neuroscientist"},{"issue":"29","key":"18_CR6","doi-asserted-by":"publisher","first-page":"3272","DOI":"10.1002\/adma.201100507","volume":"23","author":"SJ Choi","year":"2011","unstructured":"Choi, S.J., Park, G.S., Kim, K.H., Cho, S., Yang, W.Y., Li, X.S., Moon, J.H., Lee, K.J., Kim, K.: In situ observation of voltage-induced multilevel resistive switching in solid electrolyte memory. Adv. Mater. 23(29), 3272\u20133277 (2011)","journal-title":"Adv. Mater."},{"issue":"5","key":"18_CR7","doi-asserted-by":"publisher","first-page":"507","DOI":"10.1109\/TCT.1971.1083337","volume":"18","author":"L Chua","year":"1971","unstructured":"Chua, L.: Memristor-the missing circuit element. IEEE Trans. Circ. Theory 18(5), 507\u2013519 (1971)","journal-title":"IEEE Trans. Circ. Theory"},{"issue":"21","key":"18_CR8","doi-asserted-by":"publisher","first-page":"212104","DOI":"10.1063\/1.3593494","volume":"98","author":"Takashi Fujii","year":"2011","unstructured":"Fujii, T., Arita, M., Takahashi, Y., Fujiwara, I.: In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching. Appl. Phys. Letters 98(21), 212104 (2011)","journal-title":"Applied Physics Letters"},{"issue":"6","key":"18_CR9","doi-asserted-by":"publisher","first-page":"3983","DOI":"10.1021\/acs.nanolett.5b00901","volume":"15","author":"WA Hubbard","year":"2015","unstructured":"Hubbard, W.A., Kerelsky, A., Jasmin, G., White, E., Lodico, J., Mecklenburg, M., Regan, B.: Nanofilament formation and regeneration during Cu\/Al2O3 resistive memory switching. Nano Lett. 15(6), 3983\u20133987 (2015)","journal-title":"Nano Lett."},{"issue":"5","key":"18_CR10","doi-asserted-by":"publisher","first-page":"7","DOI":"10.1002\/cplx.20378","volume":"16","author":"AW Hubler","year":"2011","unstructured":"Hubler, A.W., Stephenson, C., Lyon, D., Swindeman, R.: Fabrication and programming of\u00a8 large physically evolving networks. Complexity 16(5), 7\u20138 (2011)","journal-title":"Complexity"},{"issue":"8","key":"18_CR11","doi-asserted-by":"publisher","first-page":"1379","DOI":"10.1109\/JPROC.2015.2444094","volume":"103","author":"G Indiveri","year":"2015","unstructured":"Indiveri, G., Liu, S.C.: Memory and information processing in neuromorphic systems. Proc. IEEE 103(8), 1379\u20131397 (2015)","journal-title":"Proc. IEEE"},{"issue":"17","key":"18_CR12","doi-asserted-by":"publisher","first-page":"173105","DOI":"10.1063\/1.4934818","volume":"107","author":"YeonJoo Jeong","year":"2015","unstructured":"Jeong, Y., Kim, S., Lu, W.D.: Utilizing multiple state variables to improve the dynamic range of analog switching in a memristor. Appl. Phys. Lett. 107(17), 173105 (2015)","journal-title":"Applied Physics Letters"},{"issue":"4","key":"18_CR13","doi-asserted-by":"publisher","first-page":"1297","DOI":"10.1021\/nl904092h","volume":"10","author":"SH Jo","year":"2010","unstructured":"Jo, S.H., Chang, T., Ebong, I., Bhadviya, B.B., Mazumder, P., Lu, W.: Nanoscale memristor device as synapse in neuromorphic systems. Nano Lett. 10(4), 1297\u20131301 (2010)","journal-title":"Nano Lett."},{"issue":"3","key":"18_CR14","doi-asserted-by":"publisher","first-page":"2369","DOI":"10.1021\/nn405827t","volume":"8","author":"S Kim","year":"2014","unstructured":"Kim, S., Choi, S., Lu, W.: Comprehensive physical model of dynamic resistive switching in an oxide memristor. ACS Nano 8(3), 2369\u20132376 (2014)","journal-title":"ACS Nano"},{"issue":"38","key":"18_CR15","doi-asserted-by":"publisher","first-page":"382001","DOI":"10.1088\/0957-4484\/24\/38\/382001","volume":"24","author":"Duygu Kuzum","year":"2013","unstructured":"Kuzum, D., Yu, S., Wong, H.P.: Synaptic electronics: materials, devices and applications. Nanotechnology 24(38), 382001 (2013)","journal-title":"Nanotechnology"},{"issue":"2","key":"18_CR16","doi-asserted-by":"publisher","first-page":"148","DOI":"10.1038\/nnano.2009.456","volume":"5","author":"DH Kwon","year":"2010","unstructured":"Kwon, D.H., Kim, K.M., Jang, J.H., Jeon, J.M., Lee, M.H., Kim, G.H., Li, X.S., Park, G.S., Lee, B., Han, S., et al.: Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. Nat. Nanotechnol. 5(2), 148\u2013153 (2010)","journal-title":"Nat. Nanotechnol."},{"issue":"8","key":"18_CR17","doi-asserted-by":"publisher","first-page":"625","DOI":"10.1038\/nmat3070","volume":"10","author":"MJ Lee","year":"2011","unstructured":"Lee, M.J., Lee, C.B., Lee, D., Lee, S.R., Chang, M., Hur, J.H., Kim, Y.B., Kim, C.J., Seo, D.H., Seo, S., et al.: A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5\u2212x\/TaO2\u2212x bilayer structures. Nat. Mater. 10(8), 625\u2013630 (2011)","journal-title":"Nat. Mater."},{"issue":"68","key":"18_CR18","doi-asserted-by":"publisher","first-page":"43132","DOI":"10.1039\/C7RA07522G","volume":"7","author":"J Li","year":"2017","unstructured":"Li, J., Duan, Q., Zhang, T., Yin, M., Sun, X., Cai, Y., Li, L., Yang, Y., Huang, R.: Tuning analog resistive switching and plasticity in bilayer transition metal oxide based memristive synapses. RSC Adv. 7(68), 43132\u201343140 (2017)","journal-title":"RSC Adv."},{"issue":"10","key":"18_CR19","doi-asserted-by":"publisher","first-page":"1629","DOI":"10.1109\/5.58356","volume":"78","author":"C Mead","year":"1990","unstructured":"Mead, C.: Neuromorphic electronic systems. Proc. IEEE 78(10), 1629\u20131636 (1990)","journal-title":"Proc. IEEE"},{"issue":"18","key":"18_CR20","doi-asserted-by":"publisher","first-page":"6945","DOI":"10.1039\/c3cp50738f","volume":"15","author":"S Menzel","year":"2013","unstructured":"Menzel, S., Tappertzhofen, S., Waser, R., Valov, I.: Switching kinetics of electrochemical metallization memory cells. Phys. Chem. Chem. Phys. 15(18), 6945\u20136952 (2013)","journal-title":"Phys. Chem. Chem. Phys."},{"issue":"43","key":"18_CR21","doi-asserted-by":"publisher","first-page":"4819","DOI":"10.1002\/adma.201001872","volume":"22","author":"R Muenstermann","year":"2010","unstructured":"Muenstermann, R., Menke, T., Dittmann, R., Waser, R.: Coexistence of filamentary and homogeneous resistive switching in Fe-doped SrTiO3 thin-film memristive devices. Adv. Mater. 22(43), 4819\u20134822 (2010)","journal-title":"Adv. Mater."},{"key":"18_CR22","doi-asserted-by":"publisher","first-page":"2382","DOI":"10.1038\/ncomms3382","volume":"4","author":"GS Park","year":"2013","unstructured":"Park, G.S., Kim, Y.B., Park, S.Y., Li, X.S., Heo, S., Lee, M.J., Chang, M., Kwon, J.H., Kim, M., Chung, U.I., et al.: In situ observation of filamentary conducting channels in an asymmetric Ta2O5\u2212x\/TaO2\u2212x bilayer structure. Nat. Commun. 4, 2382 (2013)","journal-title":"Nat. Commun."},{"key":"18_CR23","doi-asserted-by":"crossref","unstructured":"Park, S., Chu, M., Kim, J., Noh, J., Jeon, M., Lee, B.H., Hwang, H., Lee, B., Lee, B.G.: Electronic system with memristive synapses for pattern recognition. Sci. Rep. 5, 10123 (2015)","DOI":"10.1038\/srep10123"},{"key":"18_CR24","doi-asserted-by":"crossref","unstructured":"Peper, F.: Nanocomputers. In: Encyclopedia of Complexity and Systems Science, pp. 5859\u20135889. Springer (2009)","DOI":"10.1007\/978-0-387-30440-3_347"},{"key":"18_CR25","doi-asserted-by":"crossref","unstructured":"Prezioso, M., Kataeva, I., Merrikh-Bayat, F., Hoskins, B., Adam, G., Sota, T., Likharev, K., Strukov, D.: Modeling and implementation of firing-rate neuromorphic-network classifiers with bilayer Pt\/Al2O3\/TiO2\u2212x\/Pt memristors. In: 2015 IEEE International Electron Devices Meeting (IEDM), pp. 17\u20134. IEEE (2015)","DOI":"10.1109\/IEDM.2015.7409719"},{"issue":"7550","key":"18_CR26","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1038\/nature14441","volume":"521","author":"M Prezioso","year":"2015","unstructured":"Prezioso, M., Merrikh-Bayat, F., Hoskins, B., Adam, G., Likharev, K.K., Strukov, D.B.: Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Nature 521(7550), 61\u201364 (2015)","journal-title":"Nature"},{"key":"18_CR27","unstructured":"Saunders, P.: Morphogenesis. Collected Works of AM Turing ed. (1992)"},{"issue":"11","key":"18_CR28","doi-asserted-by":"publisher","first-page":"2327","DOI":"10.1109\/TNNLS.2015.2482220","volume":"27","author":"PM Sheridan","year":"2016","unstructured":"Sheridan, P.M., Du, C., Lu, W.D.: Feature extraction using memristor networks. IEEE Trans. Neural Netw. Learn. Syst. 27(11), 2327\u20132336 (2016)","journal-title":"IEEE Trans. Neural Netw. Learn. Syst."},{"issue":"36","key":"18_CR29","doi-asserted-by":"publisher","first-page":"365202","DOI":"10.1088\/0957-4484\/18\/36\/365202","volume":"18","author":"G S Snider","year":"2007","unstructured":"Snider, G.S.: Self-organized computation with unreliable, memristive nanodevices. Nanotechnology 18(36), 365202 (2007)","journal-title":"Nanotechnology"},{"key":"18_CR30","doi-asserted-by":"crossref","unstructured":"Song, S.J., Seok, J.Y., Yoon, J.H., Kim, K.M., Kim, G.H., Lee, M.H., Hwang, C.S.: Real-time identification of the evolution of conducting nano-filaments in TiO2 thin film ReRAM. Sci. Rep. 3 (2013)","DOI":"10.1038\/srep03443"},{"issue":"7191","key":"18_CR31","doi-asserted-by":"publisher","first-page":"80","DOI":"10.1038\/nature06932","volume":"453","author":"DB Strukov","year":"2008","unstructured":"Strukov, D.B., Snider, G.S., Stewart, D.R., Williams, R.S.: The missing memristor found. Nature 453(7191), 80\u201383 (2008)","journal-title":"Nature"},{"issue":"6","key":"18_CR32","doi-asserted-by":"publisher","first-page":"530","DOI":"10.1038\/nmat3307","volume":"11","author":"I Valov","year":"2012","unstructured":"Valov, I., Sapezanskaia, I., Nayak, A., Tsuruoka, T., Bredow, T., Hasegawa, T., Staikov, G., Aono, M., Waser, R.: Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces. Nat. Mater. 11(6), 530\u2013535 (2012)","journal-title":"Nat. Mater."},{"issue":"25","key":"18_CR33","doi-asserted-by":"publisher","first-page":"254003","DOI":"10.1088\/0957-4484\/22\/25\/254003","volume":"22","author":"Ilia Valov","year":"2011","unstructured":"Valov, I., Waser, R., Jameson, J.R., Kozicki, M.N.: Electrochemical metallization memories fundamentals, applications, prospects. Nanotechnology 22(25), 254003 (2011)","journal-title":"Nanotechnology"},{"issue":"1","key":"18_CR34","doi-asserted-by":"publisher","first-page":"101","DOI":"10.1038\/nmat4756","volume":"16","author":"Z Wang","year":"2017","unstructured":"Wang, Z., Joshi, S., Savelev, S.E., Jiang, H., Midya, R., Lin, P., Hu, M., Ge, N., Strachan, J.P., Li, Z., et al.: Memristors with diffusive dynamics as synaptic emulators for neuromorphic computing. Nat. Mater. 16(1), 101\u2013108 (2017)","journal-title":"Nat. Mater."},{"issue":"29","key":"18_CR35","doi-asserted-by":"publisher","first-page":"14015","DOI":"10.1039\/C6NR00476H","volume":"8","author":"Z Wang","year":"2016","unstructured":"Wang, Z., Yin, M., Zhang, T., Cai, Y., Wang, Y., Yang, Y., Huang, R.: Engineering incremental resistive switching in TaOx based memristors for brain-inspired computing. Nanoscale 8(29), 14015\u201314022 (2016)","journal-title":"Nanoscale"},{"issue":"11","key":"18_CR36","doi-asserted-by":"publisher","first-page":"833","DOI":"10.1038\/nmat2023","volume":"6","author":"R Waser","year":"2007","unstructured":"Waser, R., Aono, M.: Nanoionics-based resistive switching memories. Nat. Mater. 6(11), 833\u2013840 (2007)","journal-title":"Nat. Mater."},{"issue":"25\u201326","key":"18_CR37","doi-asserted-by":"publisher","first-page":"2632","DOI":"10.1002\/adma.200900375","volume":"21","author":"R Waser","year":"2009","unstructured":"Waser, R., Dittmann, R., Staikov, G., Szot, K.: Redox-based resistive switching memories\u2014nanoionic mechanisms, prospects, and challenges. Adv. Mater. 21(25\u201326), 2632\u20132663 (2009)","journal-title":"Adv. Mater."},{"issue":"1","key":"18_CR38","doi-asserted-by":"publisher","first-page":"67","DOI":"10.1038\/nnano.2015.221","volume":"11","author":"A Wedig","year":"2016","unstructured":"Wedig, A., Luebben, M., Cho, D.Y., Moors, M., Skaja, K., Rana, V., Hasegawa, T., Adepalli, K.K., Yildiz, B., Waser, R., et al.: Nanoscale cation motion in Taox, HfOx and TiOx memristive systems. Nat. Nanotechnol. 11(1), 67\u201374 (2016)","journal-title":"Nat. Nanotechnol."},{"issue":"25","key":"18_CR39","doi-asserted-by":"publisher","first-page":"254026","DOI":"10.1088\/0957-4484\/22\/25\/254026","volume":"22","author":"Qiangfei Xia","year":"2011","unstructured":"Xia, Q., Pickett, M.D., Yang, J.J., Zhang, M., Borghetti, J., Li, X., Wu, W., Medeiros-Ribeiro, G., Williams, R.S.: Impact of geometry on the performance of memristive nanodevices. Nanotechnology 22(25), 254026 (2011)","journal-title":"Nanotechnology"},{"issue":"21","key":"18_CR40","doi-asserted-by":"publisher","first-page":"215201","DOI":"10.1088\/0957-4484\/20\/21\/215201","volume":"20","author":"J Joshua Yang","year":"2009","unstructured":"Yang, J.J., Miao, F., Pickett, M.D., Ohlberg, D.A., Stewart, D.R., Lau, C.N., Williams, R.S.: The mechanism of electroforming of metal oxide memristive switches. Nanotechnology 20(21), 215201 (2009)","journal-title":"Nanotechnology"},{"issue":"1","key":"18_CR41","doi-asserted-by":"publisher","first-page":"13","DOI":"10.1038\/nnano.2012.240","volume":"8","author":"JJ Yang","year":"2013","unstructured":"Yang, J.J., Strukov, D.B., Stewart, D.R.: Memristive devices for computing. Nat. Nanotechnol. 8(1), 13\u201324 (2013)","journal-title":"Nat. Nanotechnol."},{"issue":"23","key":"18_CR42","doi-asserted-by":"publisher","first-page":"232102","DOI":"10.1063\/1.3524521","volume":"97","author":"J. Joshua Yang","year":"2010","unstructured":"Yang, J.J., Zhang, M.X., Strachan, J.P., Miao, F., Pickett, M.D., Kelley, R.D., MedeirosRibeiro, G., Williams, R.S.: High switching endurance in TaOx memristive devices. Appl. Phys. Lett. 97(23), 232102 (2010)","journal-title":"Applied Physics Letters"},{"issue":"47","key":"18_CR43","doi-asserted-by":"publisher","first-page":"7720","DOI":"10.1002\/adma.201503202","volume":"27","author":"Y Yang","year":"2015","unstructured":"Yang, Y., Chen, B., Lu, W.D.: Memristive physically evolving networks enabling the emulation of heterosynaptic plasticity. Adv. Mat. 27(47), 7720\u20137727 (2015)","journal-title":"Adv. Mat."},{"issue":"6","key":"18_CR44","doi-asserted-by":"publisher","first-page":"2908","DOI":"10.1021\/nl401287w","volume":"13","author":"Y Yang","year":"2013","unstructured":"Yang, Y., Choi, S., Lu, W.: Oxide heterostructure resistive memory. Nano Lett. 13(6), 2908\u20132915 (2013)","journal-title":"Nano Lett."},{"key":"18_CR45","doi-asserted-by":"publisher","first-page":"732","DOI":"10.1038\/ncomms1737","volume":"3","author":"Y Yang","year":"2012","unstructured":"Yang, Y., Gao, P., Gaba, S., Chang, T., Pan, X., Lu, W.: Observation of conducting filament growth in nanoscale resistive memories. Nat. Commun. 3, 732\u2013732 (2012)","journal-title":"Nat. Commun."},{"key":"18_CR46","doi-asserted-by":"publisher","first-page":"4232","DOI":"10.1038\/ncomms5232","volume":"5","author":"Y Yang","year":"2014","unstructured":"Yang, Y., Gao, P., Li, L., Pan, X., Tappertzhofen, S., Choi, S., Waser, R., Valov, I., Lu, W.D.: Electrochemical dynamics of nanoscale metallic inclusions in dielectrics. Nat. Commun. 5, 4232 (2014)","journal-title":"Nat. Commun."},{"issue":"22","key":"18_CR47","doi-asserted-by":"publisher","first-page":"3693","DOI":"10.1002\/adma.201400270","volume":"26","author":"Y Yang","year":"2014","unstructured":"Yang, Y., Lee, J., Lee, S., Liu, C.H., Zhong, Z., Lu, W.: Oxide resistive memory with functionalized graphene as built-in selector element. Adv. Mater. 26(22), 3693\u20133699 (2014)","journal-title":"Adv. Mater."},{"issue":"21","key":"18_CR48","doi-asserted-by":"publisher","first-page":"10076","DOI":"10.1039\/c3nr03472k","volume":"5","author":"Y Yang","year":"2013","unstructured":"Yang, Y., Lu, W.: Nanoscale resistive switching devices: mechanisms and modeling. Nanoscale 5(21), 10076\u201310092 (2013)","journal-title":"Nanoscale"},{"issue":"20","key":"18_CR49","doi-asserted-by":"publisher","first-page":"203112","DOI":"10.1063\/1.4719198","volume":"100","author":"Yuchao Yang","year":"2012","unstructured":"Yang, Y., Sheridan, P., Lu, W.: Complementary resistive switching in tantalum oxide-based resistive memory devices. Appl. Phys. Lett. 100(20), 203112 (2012)","journal-title":"Applied Physics Letters"},{"key":"18_CR50","doi-asserted-by":"crossref","unstructured":"Yang, Y., Zhang, X., Qin, L., Zeng, Q., Qiu, X., Huang, R.: Probing nanoscale oxygen ion motion in memristive systems. Nat. Commun. 8 (2017)","DOI":"10.1038\/ncomms15173"},{"key":"18_CR51","doi-asserted-by":"crossref","unstructured":"Yang, Y., Yin, M., Yu, Z., Wang, Z., Zhang, T., Cai, Y., Lu, W.D., Huang, R.: Multifunctional nanoionic devices enabling simultaneous heterosynaptic plasticity and efficient in-memory boolean logic. Adv. Electron. Mater. 1700032 (2017)","DOI":"10.1002\/aelm.201700032"},{"issue":"4","key":"18_CR52","doi-asserted-by":"publisher","first-page":"1636","DOI":"10.1021\/nl900006g","volume":"9","author":"YC Yang","year":"2009","unstructured":"Yang, Y.C., Pan, F., Liu, Q., Liu, M., Zeng, F.: Fully room-temperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett. 9(4), 1636\u20131643 (2009)","journal-title":"Nano Lett."},{"key":"18_CR53","doi-asserted-by":"publisher","first-page":"015003","DOI":"10.1088\/2399-1984\/aa678b","volume":"1","author":"T Zhang","year":"2017","unstructured":"Zhang, T., Yin, M., Lu, X., Cai, Y., Yang, Y., Huang, R.: Tolerance of intrinsic device variation in fuzzy restricted boltzmann machine network based on memristive nano-synapses. Nano Futures 1, 015003 (2017)","journal-title":"Nano Futures"}],"container-title":["Handbook of Memristor Networks"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-319-76375-0_18","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,11,12]],"date-time":"2019-11-12T17:06:19Z","timestamp":1573578379000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-3-319-76375-0_18"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019]]},"ISBN":["9783319763743","9783319763750"],"references-count":53,"URL":"https:\/\/doi.org\/10.1007\/978-3-319-76375-0_18","relation":{},"subject":[],"published":{"date-parts":[[2019]]},"assertion":[{"value":"8 November 2019","order":1,"name":"first_online","label":"First Online","group":{"name":"ChapterHistory","label":"Chapter History"}}]}}