{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,5]],"date-time":"2024-09-05T09:49:15Z","timestamp":1725529755257},"publisher-location":"Berlin, Heidelberg","reference-count":14,"publisher":"Springer Berlin Heidelberg","isbn-type":[{"type":"print","value":"9783540788256"},{"type":"electronic","value":"9783540788270"}],"license":[{"start":{"date-parts":[[2008,1,1]],"date-time":"2008-01-01T00:00:00Z","timestamp":1199145600000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2008]]},"DOI":"10.1007\/978-3-540-78827-0_16","type":"book-chapter","created":{"date-parts":[[2009,3,25]],"date-time":"2009-03-25T01:25:05Z","timestamp":1237944305000},"page":"157-164","source":"Crossref","is-referenced-by-count":0,"title":["Monte Carlo Algorithm for Mobility Calculations in Thin Body Field Effect Transistors: Role of Degeneracy and Intersubband Scattering"],"prefix":"10.1007","author":[{"given":"V.","family":"Sverdlov","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"E.","family":"Ungersboeck","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"H.","family":"Kosina","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","reference":[{"key":"16_CR1","unstructured":"International Technology Roadmap for Semiconductors \u2014 2005 edn.(2005), http:\/\/www.itrs.net\/Common\/2005ITRS\/Home2005.htm"},{"key":"16_CR2","doi-asserted-by":"publisher","first-page":"315","DOI":"10.1088\/0022-3719\/9\/2\/017","volume":"9","author":"S. Bosi","year":"1976","unstructured":"Bosi, S., Jacoboni, C.: Monte Carlo High Field Transport in Degenerate GaAs. J. Phys. C: Solid State Phys.\u00a09, 315\u2013319 (1976)","journal-title":"J. Phys. C: Solid State Phys."},{"key":"16_CR3","doi-asserted-by":"publisher","first-page":"9721","DOI":"10.1103\/PhysRevB.38.9721","volume":"38","author":"M.V. Fischetti","year":"1988","unstructured":"Fischetti, M.V., Laux, S.E.: Monte Carlo Analysis of Electron Transport in Small Semiconductor Devices Including Band-Structure and Space-Charge Effects. Physical Review B\u00a038, 9721\u20139745 (1988)","journal-title":"Physical Review B"},{"key":"16_CR4","doi-asserted-by":"crossref","unstructured":"Jungemann, C., Pham, A.T., Meinerzhagen, B.: A Linear Response Monte Carlo Algorithm for Inversion Layers and Magnetotransport. In: Proc. Intl. Workshop Comput. Electronics, pp. 13\u201314 (May 2006)","DOI":"10.1007\/s10825-006-0031-8"},{"key":"16_CR5","doi-asserted-by":"publisher","first-page":"1899","DOI":"10.1109\/16.870569","volume":"47","author":"H. Kosina","year":"2000","unstructured":"Kosina, H., Nedjalkov, M., Selberherr, S.: Theory of the Monte Carlo Method for Semiconductor Device Simulation. IEEE Trans. Electron Devices\u00a047, 1899\u20131908 (2000)","journal-title":"IEEE Trans. Electron Devices"},{"key":"16_CR6","doi-asserted-by":"publisher","first-page":"239","DOI":"10.1016\/B978-012507060-7\/50009-X","volume-title":"Advanced Semiconductor and Organic Nano-Techniques","author":"K.K. Likharev","year":"2003","unstructured":"Likharev, K.K.: Sub-20-nm Electron Devices. In: Morkoc, H. (ed.) Advanced Semiconductor and Organic Nano-Techniques, pp. 239\u2013302. Academic Press, New York (2003)"},{"key":"16_CR7","unstructured":"Lucci, L., et al.: Multi-Subband Monte-Carlo Modeling of Nano-MOSFETs with Strong Vertical Quantization and Electron Gas Degeneration. In: IEDM Techn. Dig., pp. 531\u2013534 (2005)"},{"key":"16_CR8","doi-asserted-by":"publisher","first-page":"2431","DOI":"10.1109\/T-ED.1985.22291","volume":"32","author":"P. Lugli","year":"1985","unstructured":"Lugli, P., Ferry, D.K.: Degeneracy in the Ensemble Monte Carlo Method for High Field Transport in Semiconductors. IEEE Trans. Electron Devices\u00a032, 2431\u20132437 (1985)","journal-title":"IEEE Trans. Electron Devices"},{"key":"16_CR9","doi-asserted-by":"publisher","first-page":"12209","DOI":"10.1103\/PhysRevB.40.12209","volume":"40","author":"L. Reggiani","year":"1989","unstructured":"Reggiani, L., et al.: Diffusion and fluctuations in a nonequilibrium electron gas with electron-electron collisions. Phys. Rev. B\u00a040, 12209\u201312214 (1989)","journal-title":"Phys. Rev. B"},{"key":"16_CR10","doi-asserted-by":"publisher","first-page":"5791","DOI":"10.1063\/1.1616982","volume":"94","author":"S. Smirnov","year":"2003","unstructured":"Smirnov, S., et al.: Monte Carlo Method for Modeling of Small Signal Response Including the Pauli Exclusion Principle. J. Appl. Phys.\u00a094, 5791\u20135799 (2003)","journal-title":"J. Appl. Phys."},{"key":"16_CR11","unstructured":"Sverdlov, V., et al.: Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations. In: Proc. EUROSOI 2006, pp. 133\u2013134 (March 2006)"},{"key":"16_CR12","doi-asserted-by":"publisher","first-page":"2357","DOI":"10.1109\/16.337449","volume":"41","author":"S.I. Takagi","year":"1994","unstructured":"Takagi, S.I., et al.: On the Universality of Inversion Layer Mobility in Si MOSFET\u2019s: Part I \u2014 Effects of Substrate Impurity Concentration. IEEE Trans. Electron Devices\u00a041, 2357\u20132362 (1994)","journal-title":"IEEE Trans. Electron Devices"},{"key":"16_CR13","unstructured":"Uchida, K., Koga, J., Takagi, S.: Experimental Study on Carrier Transport Mechanisms in Double- and Single-Gate Ultrathin-Body MOSFETs \u2014 Coulomb Scattering, Volume Inversion, and \u03b4T SOI -induced Scattering. In: IEDM Techn. Dig., pp. 805\u2013808 (2003)"},{"key":"16_CR14","doi-asserted-by":"crossref","unstructured":"Ungersboeck, E., Kosina, H.: The Effect of Degeneracy on Electron Transport in Strained Silicon Inversion Layer. In: Proc. Intl. Conf. on Simulation of Semiconductor Processes and Devices, pp. 311\u2013314 (2005)","DOI":"10.1109\/SISPAD.2005.201535"}],"container-title":["Lecture Notes in Computer Science","Large-Scale Scientific Computing"],"original-title":[],"link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-3-540-78827-0_16","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,5,18]],"date-time":"2019-05-18T22:15:12Z","timestamp":1558217712000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-3-540-78827-0_16"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008]]},"ISBN":["9783540788256","9783540788270"],"references-count":14,"URL":"https:\/\/doi.org\/10.1007\/978-3-540-78827-0_16","relation":{},"ISSN":["0302-9743","1611-3349"],"issn-type":[{"type":"print","value":"0302-9743"},{"type":"electronic","value":"1611-3349"}],"subject":[],"published":{"date-parts":[[2008]]}}}