{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,27]],"date-time":"2026-05-27T18:34:58Z","timestamp":1779906898889,"version":"3.53.1"},"publisher-location":"Dordrecht","reference-count":69,"publisher":"Springer Netherlands","isbn-type":[{"value":"9789401775106","type":"print"},{"value":"9789401775120","type":"electronic"}],"license":[{"start":{"date-parts":[[2016,1,1]],"date-time":"2016-01-01T00:00:00Z","timestamp":1451606400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2016]]},"DOI":"10.1007\/978-94-017-7512-0_8","type":"book-chapter","created":{"date-parts":[[2016,5,26]],"date-time":"2016-05-26T16:17:40Z","timestamp":1464279460000},"page":"223-260","source":"Crossref","is-referenced-by-count":4,"title":["RRAM Cross-Point Arrays"],"prefix":"10.1007","author":[{"given":"Huaqiang","family":"Wu","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yan","family":"Liao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bin","family":"Gao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Debanjan","family":"Jana","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"He","family":"Qian","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2016,5,27]]},"reference":[{"issue":"22","key":"8_CR1","doi-asserted-by":"crossref","first-page":"3919","DOI":"10.1002\/adma.200700251","volume":"19","author":"M-J Lee","year":"2007","unstructured":"M.-J. Lee et al., Two series oxide resistors applicable to high speed and high density nonvolatile memory. Adv. Mater. 19(22), 3919\u20133923 (2007)","journal-title":"Adv. Mater."},{"key":"8_CR2","unstructured":"H.J. Sung, N. Hagop, in Next Generation Nonvolatile Memory, Its Impact on Computer System (Resources of Crossbar Company, 2013)"},{"key":"8_CR3","doi-asserted-by":"crossref","unstructured":"B.J. Choi et al., in Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Nano Lett. 13(7), 3213\u20133217 (2013)","DOI":"10.1021\/nl401283q"},{"key":"8_CR4","doi-asserted-by":"crossref","unstructured":"T. Yanagida et al., in Scaling effect on unipolar and bipolar resistive switching of metal oxides. Sci. Rep. 3 (2013)","DOI":"10.1038\/srep01657"},{"key":"8_CR5","unstructured":"C. Ho et al., 9\u00a0nm half-pitch functional resistive memory cell with\u00a0<\u00a01\u00b5A programming current using thermally oxidized sub-stoichiometric WOx film, in 2010 International Electron Devices Meeting (2010)"},{"issue":"6","key":"8_CR6","doi-asserted-by":"crossref","first-page":"1951","DOI":"10.1109\/JPROC.2012.2190369","volume":"100","author":"H-SP Wong","year":"2012","unstructured":"H.-S.P. Wong et al., Metal\u2013oxide RRAM. Proc. IEEE 100(6), 1951\u20131970 (2012)","journal-title":"Proc. IEEE"},{"key":"8_CR7","doi-asserted-by":"crossref","unstructured":"H. Ohno et al., Magnetic tunnel junction for nonvolatile CMOS logic, in Electron Devices Meeting (IEDM), 2010 IEEE International. IEEE (2010)","DOI":"10.1109\/IEDM.2010.5703329"},{"issue":"23","key":"8_CR8","doi-asserted-by":"crossref","first-page":"3738","DOI":"10.1063\/1.1377617","volume":"78","author":"Y Watanabe","year":"2001","unstructured":"Y. Watanabe et al., Current-driven insulator\u2013conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals. Appl. Phys. Lett. 78(23), 3738\u20133740 (2001)","journal-title":"Appl. Phys. Lett."},{"key":"8_CR9","doi-asserted-by":"crossref","unstructured":"C. Rohde et al., Identification of a determining parameter for resistive switching of TiO2 thin films. Appl. Phys. Lett. 86(26), 262907 (2005)","DOI":"10.1063\/1.1968416"},{"issue":"16","key":"8_CR10","doi-asserted-by":"crossref","first-page":"2997","DOI":"10.1063\/1.1473234","volume":"80","author":"LP Ma","year":"2002","unstructured":"L.P. Ma, J. Liu, Y. Yang, Organic electrical bistable devices and rewritable memory cells. Appl. Phys. Lett. 80(16), 2997\u20132999 (2002)","journal-title":"Appl. Phys. Lett."},{"key":"8_CR11","doi-asserted-by":"crossref","unstructured":"I.G. Baek et al., Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses, in Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International (2004)","DOI":"10.1109\/IEDM.2004.1419228"},{"key":"8_CR12","doi-asserted-by":"crossref","unstructured":"H.Y. Lee et al., Evidence and solution of over-RESET problem for HfO x based resistive memory with sub-ns switching speed and high endurance, in Electron Devices Meeting (IEDM), 2010 IEEE International. IEEE (2010)","DOI":"10.1109\/IEDM.2010.5703395"},{"key":"8_CR13","doi-asserted-by":"crossref","unstructured":"B. Govoreanu et al., 10\u00a0\u00d7\u00a010\u00a0nm 2 Hf\/HfO x crossbar resistive RAM with excellent performance, reliability and low-energy operation, in Electron Devices Meeting (IEDM), 2011 IEEE International. IEEE (2011)","DOI":"10.1109\/IEDM.2011.6131652"},{"key":"8_CR14","doi-asserted-by":"crossref","unstructured":"M.-J. Lee et al., in A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5\u2212x\/TaO2\u2212x bilayer structures. Nat. Mater. 10(8), 625\u2013630 (2011)","DOI":"10.1038\/nmat3070"},{"issue":"9","key":"8_CR15","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/j.mser.2014.06.002","volume":"83","author":"F Pan","year":"2014","unstructured":"F. Pan et al., Recent progress in resistive random access memories: Materials, switching mechanisms, and performance. Mater. Sci. Eng. R Rep. 83(9), 1\u201359 (2014)","journal-title":"Mater. Sci. Eng. R Rep."},{"issue":"12","key":"8_CR16","doi-asserted-by":"crossref","first-page":"2201","DOI":"10.1109\/JPROC.2010.2070050","volume":"98","author":"HS Philip Wong","year":"2010","unstructured":"H.S. Philip Wong et al., Phase change memory. Proc. IEEE 98(12), 2201\u20132227 (2010)","journal-title":"Proc. IEEE"},{"key":"8_CR17","doi-asserted-by":"crossref","unstructured":"I.G. Baek et al., Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application, in Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International. IEEE (2005)","DOI":"10.1109\/IEDM.2005.1609462"},{"key":"8_CR18","doi-asserted-by":"crossref","unstructured":"M.-J. Lee et al., 2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications, in Electron Devices Meeting, 2007. IEDM 2007. IEEE International. IEEE (2007)","DOI":"10.1109\/IEDM.2007.4419061"},{"key":"8_CR19","doi-asserted-by":"crossref","unstructured":"Y. Bai et al., in Study of multi-level characteristics for 3D vertical resistive switching memory. Sci. Rep. 4 (2014)","DOI":"10.1038\/srep05780"},{"key":"8_CR20","doi-asserted-by":"crossref","unstructured":"S. Yu et al., HfOx-based vertical resistive switching random access memory suitable for bit-cost-effective three-dimensional cross-point architecture. ACS Nano 7(3), 2320\u20132325 (2013)","DOI":"10.1021\/nn305510u"},{"key":"8_CR21","doi-asserted-by":"crossref","unstructured":"W.C. Chien et al., Multi-layer sidewall WOx resistive memory suitable for 3D ReRAM, in 2012 Symposium on VLSI Technology (VLSIT). IEEE (2012)","DOI":"10.1109\/VLSIT.2012.6242507"},{"key":"8_CR22","doi-asserted-by":"crossref","unstructured":"J.-Y. Seok et al., A review of three-dimensional resistive switching cross-bar array memories from the integration and materials property points of view. Adv. Funct. Mater. 24(34), 5316\u20135339 (2014)","DOI":"10.1002\/adfm.201303520"},{"key":"8_CR23","unstructured":"C.-W. Hsu et al., Self-rectifying bipolar TaOx\/TiO2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory, in 2013 Symposium on VLSI Technology (VLSIT). IEEE (2013)"},{"key":"8_CR24","unstructured":"K.-S. Li et al., Utilizing Sub-5\u00a0nm sidewall electrode technology for atomic-scale resistive memory fabrication, in 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers. IEEE (2014)"},{"key":"8_CR25","doi-asserted-by":"crossref","unstructured":"Y. Bai et al., in Stacked 3D RRAM array with graphene\/CNT as edge electrodes. Sci. Rep. 5 (2015)","DOI":"10.1038\/srep13785"},{"key":"8_CR26","doi-asserted-by":"crossref","unstructured":"I.G. Baek et al., Realization of vertical resistive memory (VRRAM) using cost effective 3D process, in Electron Devices Meeting (IEDM), 2011 IEEE International. IEEE (2011)","DOI":"10.1109\/IEDM.2011.6131654"},{"key":"8_CR27","doi-asserted-by":"crossref","unstructured":"S.G. Park et al., A non-linear ReRAM cell with sub-1\u03bcA ultralow operating current for high density vertical resistive memory (VRRAM), in Electron Devices Meeting, 1988. IEDM \u201888. Technical Digest, pp. 20.8.1\u201320.8.4 (2012)","DOI":"10.1109\/IEDM.2012.6479084"},{"key":"8_CR28","unstructured":"H.S. Yoon et al., Vertical cross-point resistance change memory for ultra-high density non-volatile memory applications, in 2009 Symposium on VLSI Technology (2009)"},{"key":"8_CR29","doi-asserted-by":"crossref","unstructured":"Y. Deng et al., Design and optimization methodology for 3D RRAM arrays, in Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE (2013)","DOI":"10.1109\/IEDM.2013.6724693"},{"key":"8_CR30","doi-asserted-by":"crossref","unstructured":"H.-Y. Chen et al., HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector, in Electron Devices Meeting (IEDM), 2012 IEEE International. IEEE (2012)","DOI":"10.1109\/IEDM.2012.6479083"},{"key":"8_CR31","doi-asserted-by":"crossref","unstructured":"E. Cha et al., Nanoscale (\u223c\u00a010\u00a0nm) 3D vertical ReRAM and NbO 2 threshold selector with TiN electrode, in Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE (2013)","DOI":"10.1109\/IEDM.2013.6724602"},{"key":"8_CR32","doi-asserted-by":"crossref","unstructured":"C.-W. Hsu et al., 3D vertical TaO x\/TiO 2 RRAM with over 10 3 self-rectifying ratio and sub-\u03bcA operating current, in 2013 IEEE International Electron Devices Meeting (2013)","DOI":"10.1109\/IEDM.2013.6724601"},{"key":"8_CR33","doi-asserted-by":"crossref","unstructured":"A. Chen, Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays (2015)","DOI":"10.1109\/TED.2015.2450712"},{"key":"8_CR34","doi-asserted-by":"crossref","unstructured":"A. Flocke, G.N. Tobias, Fundamental analysis of resistive nano-crossbars for the use in hybrid Nano\/CMOS-memory, in 33rd European Conference on Solid State Circuits (ESSCIRC 2007). IEEE (2007)","DOI":"10.1109\/ESSCIRC.2007.4430310"},{"key":"8_CR35","doi-asserted-by":"crossref","unstructured":"C.-L. Lo et al., in Dependence of read margin on pull-up schemes in high-density one selector\u2013one resistor crossbar array. IEEE Trans. Electr. Devices 60(1), 420\u2013426 (2013)","DOI":"10.1109\/TED.2012.2225147"},{"key":"8_CR36","doi-asserted-by":"crossref","unstructured":"J.-J. Huang et al., One selector-one resistor (1S1R) crossbar array for high-density flexible memory applications, in Electron Devices Meeting (IEDM), 2011 IEEE International. IEEE (2011)","DOI":"10.1109\/IEDM.2011.6131653"},{"key":"8_CR37","doi-asserted-by":"crossref","unstructured":"P. Sun et al., in Physical model of dynamic Joule heating effect for reset process in conductive-bridge random access memory. J. Comput. Electr. 13(2), 432\u2013438 (2014)","DOI":"10.1007\/s10825-013-0552-x"},{"key":"8_CR38","doi-asserted-by":"crossref","unstructured":"P. Sun et al., in Thermal crosstalk in 3-dimensional RRAM crossbar array. Sci. Rep. 5 (2015)","DOI":"10.1038\/srep13504"},{"key":"8_CR39","doi-asserted-by":"crossref","unstructured":"X.P. Wang et al., Highly compact 1T-1R architecture (4F 2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation, in Electron Devices Meeting (IEDM), 2012 IEEE International. IEEE (2012)","DOI":"10.1109\/IEDM.2012.6479082"},{"key":"8_CR40","doi-asserted-by":"crossref","unstructured":"C.-H. Wang et al., Three-dimensional 4F 2 ReRAM cell with CMOS logic compatible process, in Electron Devices Meeting (IEDM), 2010 IEEE International. IEEE (2010)","DOI":"10.1109\/IEDM.2010.5703446"},{"key":"8_CR41","doi-asserted-by":"crossref","unstructured":"G. Tallarida et al., Low temperature rectifying junctions for crossbar non-volatile memory devices, in 2009 IEEE International Memory Workshop (2009)","DOI":"10.1109\/IMW.2009.5090598"},{"key":"8_CR42","doi-asserted-by":"crossref","unstructured":"L. Zhang et al. High-drive current (>1MA\/cm 2) and highly nonlinear (>10 3) TiN\/amorphous-Silicon\/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance, in Electron Devices Meeting (IEDM), 2014 IEEE International. IEEE (2014)","DOI":"10.1109\/IEDM.2014.7047000"},{"key":"8_CR43","unstructured":"W. Lee et al., Varistor-type bidirectional switch (J MAX\u00a0>\u00a010 7 A\/cm 2, selectivity\u00a0\u223c\u00a010 4) for 3D bipolar resistive memory arrays, in 2012 Symposium on VLSI Technology (VLSIT). IEEE (2012)"},{"key":"8_CR44","doi-asserted-by":"crossref","unstructured":"D. Lee et al., BEOL compatible (300\u00a0\u00b0C) TiN\/TiO x\/Ta\/TiN 3D nanoscale (\u223c10\u00a0nm) IMT selector, in Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE (2013)","DOI":"10.1109\/IEDM.2013.6724604"},{"key":"8_CR45","unstructured":"S.H. Jo et al., 3D-stackable crossbar resistive memory based on field assisted superlinear threshold (FAST) selector, in Electron Devices Meeting (IEDM), 2014 IEEE International. IEEE (2014)"},{"key":"8_CR46","doi-asserted-by":"crossref","unstructured":"M.-J. Lee et al., Highly-scalable threshold switching select device based on chaclogenide glasses for 3D nanoscaled memory arrays, in Electron Devices Meeting (IEDM), 2012 IEEE International. IEEE (2012)","DOI":"10.1109\/IEDM.2012.6478966"},{"key":"8_CR47","doi-asserted-by":"crossref","unstructured":"H. Yang et al., Novel selector for high density non-volatile memory with ultra-low holding voltage and 10 7 on\/off ratio, in 2015 Symposium on VLSI Technology (VLSI Technology). IEEE (2015)","DOI":"10.1109\/VLSIT.2015.7223716"},{"key":"8_CR48","unstructured":"S. Kim et al., Performance of threshold switching in chalcogenide glass for 3D stackable selector, in Proceedings of Symposium on VLSIT (2013)"},{"issue":"1","key":"8_CR49","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1016\/S0167-2738(02)00182-0","volume":"157","author":"I Riess","year":"2003","unstructured":"I. Riess, Mixed ionic\u2013electronic conductors\u2014material properties and applications. Solid State Ionics 157(1), 1\u201317 (2003)","journal-title":"Solid State Ionics"},{"key":"8_CR50","doi-asserted-by":"crossref","unstructured":"K. Virwani et al., in Sub-30\u00a0nm scaling and high-speed operation of fully-confined access-devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC) materials. IEDM Tech. Dig. 36\u201339 (2012)","DOI":"10.1109\/IEDM.2012.6478967"},{"key":"8_CR51","doi-asserted-by":"crossref","unstructured":"K. Gopalakrishnan et al., Highly-scalable novel access device based on mixed ionic electronic conduction (MIEC) materials for high density phase change memory (PCM) arrays, in 2010 Symposium on VLSI Technology (VLSIT). IEEE (2010)","DOI":"10.1109\/VLSIT.2010.5556229"},{"key":"8_CR52","unstructured":"G. Burr et al., Recovery dynamics and fast (sub-50\u00a0ns) read operation with access devices for 3D crosspoint memory based on mixed-ionic-electronic-conduction (MIEC), in 2013 Symposium on VLSI Technology (VLSIT). IEEE (2013)"},{"key":"8_CR53","doi-asserted-by":"crossref","unstructured":"X.A. Tran et al., Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials, in Electron Devices Meeting, 1988. IEDM \u201888. Technical Digest, pp. 31.2.1\u201331.2.4 (2011)","DOI":"10.1109\/IEDM.2011.6131648"},{"key":"8_CR54","doi-asserted-by":"crossref","unstructured":"B. Govoreanu et al., Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on\/off-window resistive switching cell, in Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE (2013)","DOI":"10.1109\/IEDM.2013.6724599"},{"key":"8_CR55","doi-asserted-by":"crossref","unstructured":"S. Lee et al., Selector-less ReRAM with an excellent non-linearity and reliability by the band-gap engineered multi-layer titanium oxide and triangular shaped AC pulse, in Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE (2013)","DOI":"10.1109\/IEDM.2013.6724603"},{"key":"8_CR56","doi-asserted-by":"crossref","unstructured":"E. Linn et al., in Complementary resistive switches for passive nanocrossbar memories. Nat. Mater, 9(5), 403\u2013406 (2010)","DOI":"10.1038\/nmat2748"},{"issue":"2","key":"8_CR57","doi-asserted-by":"crossref","first-page":"191","DOI":"10.1109\/LED.2010.2090127","volume":"32","author":"R Rosezin","year":"2011","unstructured":"R. Rosezin et al., Integrated complementary resistive switches for passive high-density nanocrossbar arrays. Elect. Device Lett. 32(2), 191\u2013193 (2011)","journal-title":"Elect. Device Lett."},{"key":"8_CR58","doi-asserted-by":"crossref","unstructured":"F. Nardi et al., Complementary switching in metal oxides: Toward diode-less crossbar RRAMs, in Electron Devices Meeting (IEDM), 2011 IEEE International. IEEE (2011)","DOI":"10.1109\/IEDM.2011.6131647"},{"key":"8_CR59","unstructured":"S. Yu et al., 3d vertical rram-scaling limit analysis and demonstration of 3d array operation, in 2013 Symposium on VLSI Technology (VLSIT). IEEE (2013)"},{"key":"8_CR60","unstructured":"The information Intel pronounced at IDF 15. http:\/\/www.eetimes.com\/document.asp?doc_id=1327289"},{"key":"8_CR61","doi-asserted-by":"crossref","unstructured":"R. Fackenthal et al., 19.7 A 16\u00a0Gb ReRAM with 200\u00a0MB\/s write and 1\u00a0GB\/s read in 27\u00a0nm technology. Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2014 IEEE International. IEEE (2014)","DOI":"10.1109\/ISSCC.2014.6757460"},{"key":"8_CR62","unstructured":"T.-Y. Liu et al., A 130.7\u00a0mm 2 2-layer 32\u00a0Gb ReRAM memory device in 24\u00a0nm technology, in Digest of Technical Papers\u2014IEEE International Solid-State Circuits Conference, pp. 210\u2013211 (2013)"},{"key":"8_CR63","doi-asserted-by":"crossref","unstructured":"T.-Y. Liu et al., in A 130.7-2-layer 32-Gb ReRAM memory device in 24-nm technology. IEEE J. Solid-State Circ. 49(1), 140\u2013153 (2014)","DOI":"10.1109\/JSSC.2013.2280296"},{"key":"8_CR64","unstructured":"S.H. Jo et al., in Cross-point resistive ram based on field-assisted superlinear threshold selector. IEEE Trans. Elect. Devices (2015)"},{"key":"8_CR65","unstructured":"S.H. Jo et al., \u201cSneak path\u201d breakthrough heralds arrival of ultra-high density resistive memory. Chip Des. (Winter 2015)"},{"key":"8_CR66","doi-asserted-by":"crossref","unstructured":"M.-C. Hsieh et al., Ultra high density 3D via RRAM in pure 28\u00a0nm CMOS process, in Electron Devices Meeting (IEDM), 2013 IEEE International. IEEE (2013)","DOI":"10.1109\/IEDM.2013.6724600"},{"key":"8_CR67","doi-asserted-by":"crossref","unstructured":"Y.-W. Chin et al., Point twin-bit RRAM in 3D interweaved cross-point array by Cu BEOL process, in Electron Devices Meeting (IEDM), 2014 IEEE International. IEEE (2014)","DOI":"10.1109\/JEDS.2015.2425652"},{"key":"8_CR68","doi-asserted-by":"crossref","unstructured":"M.-J. Lee et al., in Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory. Nano Lett. 9(4), 1476\u20131481 (2009)","DOI":"10.1021\/nl803387q"},{"key":"8_CR69","doi-asserted-by":"crossref","unstructured":"H. Li et al., in A SPICE model of resistive random access memory for large-scale memory array simulation. Elect. Device Lett. 35(2), 211\u2013213 (2014)","DOI":"10.1109\/LED.2013.2293354"}],"container-title":["3D Flash Memories"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-94-017-7512-0_8","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,6,3]],"date-time":"2025-06-03T19:40:53Z","timestamp":1748979653000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-94-017-7512-0_8"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016]]},"ISBN":["9789401775106","9789401775120"],"references-count":69,"URL":"https:\/\/doi.org\/10.1007\/978-94-017-7512-0_8","relation":{},"subject":[],"published":{"date-parts":[[2016]]}}}