{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,9]],"date-time":"2024-09-09T11:32:13Z","timestamp":1725881533169},"publisher-location":"Singapore","reference-count":13,"publisher":"Springer Singapore","isbn-type":[{"type":"print","value":"9789811031557"},{"type":"electronic","value":"9789811031564"}],"license":[{"start":{"date-parts":[[2017,1,1]],"date-time":"2017-01-01T00:00:00Z","timestamp":1483228800000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":[],"published-print":{"date-parts":[[2017]]},"DOI":"10.1007\/978-981-10-3156-4_37","type":"book-chapter","created":{"date-parts":[[2017,3,2]],"date-time":"2017-03-02T02:13:45Z","timestamp":1488420825000},"page":"361-368","source":"Crossref","is-referenced-by-count":8,"title":["Performance Analysis of Fully Depleted SOI Tapered Body Reduced Source (FD-SOI TBRS) MOSFET for Low Power Digital Applications"],"prefix":"10.1007","author":[{"given":"Vimal Kumar","family":"Mishra","sequence":"first","affiliation":[]},{"given":"R. K.","family":"Chauhan","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2017,3,3]]},"reference":[{"key":"37_CR1","doi-asserted-by":"crossref","first-page":"1","DOI":"10.1007\/s11432-016-5561-5","volume":"59","author":"KG Cheng","year":"2016","unstructured":"K.G. Cheng, A. Khakifirooz, Fully depleted SOI (FDSOI) technology. Sci. China Inf. Sci. 59, 1\u201315 (2016)","journal-title":"Sci. China Inf. Sci."},{"doi-asserted-by":"crossref","unstructured":"Y.-C. Tseng, W.M. Huang, D.C. Diaz, J.M. Ford, J.C.S. Woo, AC floating-body effects in submicron fully depleted (FD) SOI nMOSFET\u2019s and the impact on analog applications. IEEE Electron Device Lett. 19(9), 351\u2013353 (1998)","key":"37_CR2","DOI":"10.1109\/55.709641"},{"issue":"9","key":"37_CR3","doi-asserted-by":"crossref","first-page":"2073","DOI":"10.1109\/TED.2010.2052420","volume":"57","author":"Siddharth Chouksey","year":"2010","unstructured":"Siddharth Chouksey, Jerry G. Fossum, Shishir Agrawal, Insights on design and scalability of Thin-BOX FD\/SOI CMOS. IEEE Trans. Electron Devices 57(9), 2073\u20132079 (2010)","journal-title":"IEEE Trans. Electron Devices"},{"issue":"2","key":"37_CR4","doi-asserted-by":"crossref","first-page":"301","DOI":"10.1109\/TED.2006.888728","volume":"54","author":"Tetsu Ohtou","year":"2007","unstructured":"Tetsu Ohtou, Kouki Yokoyama, Ken Shimizu, Toshiharu Nagumo, Toshiro Hiramoto, Threshold-voltage control of AC performance degradation-free FD SOI MOSFET with extremely thin BOX using variable body-factor scheme. IEEE Trans. Electron Devices 54(2), 301\u2013308 (2007)","journal-title":"IEEE Trans. Electron Devices"},{"issue":"3","key":"37_CR5","doi-asserted-by":"crossref","first-page":"803","DOI":"10.1109\/TED.2007.914832","volume":"55","author":"Guohe Zhang","year":"2008","unstructured":"Guohe Zhang, Zhibiao Shao, Kai Zhou, Threshold voltage model of short-channel FD-SOI MOSFETs with vertical gaussian profile. IEEE Trans. Electron Devices 55(3), 803\u2013809 (2008)","journal-title":"IEEE Trans. Electron Devices"},{"issue":"2","key":"37_CR6","doi-asserted-by":"crossref","first-page":"330","DOI":"10.1109\/TNANO.2015.2394247","volume":"14","author":"Wen-Kuan Yeh","year":"2015","unstructured":"Wen-Kuan Yeh, Cheng-Li Lin, Tung-Huan Chou, Wu Kehuey, Jiann-Shiun Yuan, The impact of junction doping distribution on device performance variability and reliability for fully depleted silicon on insulator with thin box layer MOSFETs. IEEE Trans. Nanotechnol. 14(2), 330\u2013337 (2015)","journal-title":"IEEE Trans. Nanotechnol."},{"doi-asserted-by":"crossref","unstructured":"P. Agarwal, G. Saraswat, M. Jagadesh Kumar, compact surface potential model for FD-SOI MOSFET considering substrate depletion region. IEEE Trans. Electron Devices, 55(3), 789\u2013795 (2008)","key":"37_CR7","DOI":"10.1109\/TED.2007.914834"},{"issue":"2","key":"37_CR8","doi-asserted-by":"crossref","first-page":"247","DOI":"10.1109\/TDMR.2010.2044180","volume":"10","author":"Rathnamala Rao","year":"2010","unstructured":"Rathnamala Rao, Nandita DasGupta, Amitava DasGupta, Study of random dopant fluctuation effects in FD-SOI MOSFET using analytical threshold voltage model. IEEE Trans. Device Mater. Reliab. 10(2), 247\u2013253 (2010)","journal-title":"IEEE Trans. Device Mater. Reliab."},{"unstructured":"V.K. Mishra, R.K. Chauhan, Performance analysis of fully depleted ultra thin body [FD UTB SOI MOSFET] based CMOS inverter circuit for low power digital applications. Adv. Intell. Syst. Comput. (2016), pp. 375\u2013382","key":"37_CR9"},{"unstructured":"Visual TCAD User Guide, version: 1.8.2-8, Cogenda device simulator, (March 2015)","key":"37_CR10"},{"unstructured":"International Technology Roadmap for Semiconductors, (SIA), edition of ITRS, (2013). http:\/\/itrs2.net","key":"37_CR11"},{"key":"37_CR12","doi-asserted-by":"crossref","first-page":"74","DOI":"10.1016\/j.mee.2012.01.009","volume":"95","author":"M Saremi","year":"2012","unstructured":"M. Saremi, A. A. khusa, Saeed Mohamadi, Ground plane fin-shaped field effect transistor (GP-FinFET): a FinFET for low leakage power circuits. Microelectron. Eng. 95, 74\u201382 (2012)","journal-title":"Microelectron. Eng."},{"key":"37_CR13","doi-asserted-by":"crossref","first-page":"780","DOI":"10.1007\/s11431-012-5125-x","volume":"56","author":"D Tang","year":"2013","unstructured":"D. Tang, Y.H. Li, G.H. Zhang et al., Single event upset sensitivity of 45\u00a0nm FDSOI and SOI FinFET SRAM. Sci. China Tech. Sci. 56, 780\u2013785 (2013)","journal-title":"Sci. China Tech. Sci."}],"container-title":["Advances in Intelligent Systems and Computing","Proceedings of the 5th International Conference on Frontiers in Intelligent Computing: Theory and Applications"],"original-title":[],"link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/978-981-10-3156-4_37","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,25]],"date-time":"2017-06-25T07:43:19Z","timestamp":1498376599000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/978-981-10-3156-4_37"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017]]},"ISBN":["9789811031557","9789811031564"],"references-count":13,"URL":"https:\/\/doi.org\/10.1007\/978-981-10-3156-4_37","relation":{},"ISSN":["2194-5357","2194-5365"],"issn-type":[{"type":"print","value":"2194-5357"},{"type":"electronic","value":"2194-5365"}],"subject":[],"published":{"date-parts":[[2017]]}}}