{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,6]],"date-time":"2026-04-06T06:52:06Z","timestamp":1775458326512,"version":"3.50.1"},"reference-count":30,"publisher":"Springer Science and Business Media LLC","issue":"1-2","license":[{"start":{"date-parts":[[2001,1,1]],"date-time":"2001-01-01T00:00:00Z","timestamp":978307200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2001,1,1]],"date-time":"2001-01-01T00:00:00Z","timestamp":978307200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Ann. T\u00e9l\u00e9commun."],"published-print":{"date-parts":[[2001,1]]},"DOI":"10.1007\/bf03002982","type":"journal-article","created":{"date-parts":[[2021,7,7]],"date-time":"2021-07-07T08:34:26Z","timestamp":1625646866000},"page":"15-26","source":"Crossref","is-referenced-by-count":4,"title":["Hemt\u2019s capability for millimeter wave applications","Potentialit\u00c9S et Performances des Hemts Pour Applications en Gamme D\u2019onde Millim\u00c9trique"],"prefix":"10.1007","volume":"56","author":[{"given":"S.","family":"Bollaert","sequence":"first","affiliation":[]},{"given":"Y.","family":"Cordier","sequence":"additional","affiliation":[]},{"given":"M.","family":"Zaknoune","sequence":"additional","affiliation":[]},{"given":"T.","family":"Parenty","sequence":"additional","affiliation":[]},{"given":"H.","family":"Happy","sequence":"additional","affiliation":[]},{"given":"A.","family":"Cappy","sequence":"additional","affiliation":[]}],"member":"297","reference":[{"issue":"7","key":"BF03002982_CR1","doi-asserted-by":"publisher","first-page":"665","DOI":"10.1063\/1.90457","volume":"33","author":"(R.) Dingle","year":"1978","unstructured":"Dingle (R.), Stormer (H.), Gossard (A.C.), Wiegrnann (W.), \u201cElectron mobilities in modulation doped semiconductor heterojunction superlattices,\u201dAppl Phys. Lett.,33, n\u00b0 7, pp. 665\u2013667, Oct. 1, 1978.","journal-title":"Appl Phys. Lett."},{"key":"BF03002982_CR2","doi-asserted-by":"crossref","unstructured":"Camnitz (L.H.),Tasker (P.J.),Lee (H.),van der Merwe (D.),Eastman (L.F.), \u201cMicrowave characterization of very high transconductance modfet\u201din Iedm Tech. Dig., pp. 360\u2013363, Dec. 1984.","DOI":"10.1109\/IEDM.1984.190723"},{"key":"BF03002982_CR3","unstructured":"Suemitsu (T.),et al., \u201c30-nrn gate InAlAs\/lnGaAs hemt\u2019s lattice-matched to InP substrates,\u201diedm Technical Digest, pp. 223\u2013 226, 1998."},{"key":"BF03002982_CR4","doi-asserted-by":"crossref","unstructured":"Lai (R.),Barsky (M.),Huang (T.),Sholley (M.),Wang (H.),Kok (Y.L.),Streit (D.C.),Block (T.),Liu (P.H.),Gaier (T.),Samoska (L.), \u201cAn InP hemt mmic lna with 7.2dB Gain at 190GHz\u201d,ieee Microwave and Guided Wave Letters,8, n\u00b0 11, Nov. 1998","DOI":"10.1109\/75.736257"},{"key":"BF03002982_CR5","doi-asserted-by":"publisher","first-page":"230","DOI":"10.1109\/75.392284","volume":"5","author":"(P.M.) Smith","year":"1995","unstructured":"Smith (P.M.)\n                  et al, \u201cW-band high efficiency InP-based power hemt with 600 GHz Fmax\u201d,ieee Microwave Guided Wave Letter,5, pp. 230\u2013232, luly 1995.","journal-title":"ieee Microwave Guided Wave Letter"},{"issue":"5","key":"BF03002982_CR6","doi-asserted-by":"publisher","first-page":"114","DOI":"10.1109\/75.89081","volume":"1","author":"(K.H.G.) Duh","year":"1991","unstructured":"Duh (K.H.G.), Chao (P.C.), Liu (S.M.J.), Ho (P.), Kao (M.Y.), Ballingall (J.M.), \u201cA Super Low-Noise 0.1 \u00bcn T-Gate InAlAsInGaAs-InP hemt\u201d,ieee Microwave and Guided Wave letters,1, n\u00b05, May 1991, pp. 114\u2013116.","journal-title":"ieee Microwave and Guided Wave letters"},{"issue":"5","key":"BF03002982_CR7","first-page":"71","volume":"33","author":"Smith (P.M.) Smith","year":"1990","unstructured":"Smith (P.M.), Ballingall (J.M.), Swanson (A.W.), \u201cMicrowave and mm-Wave Power Amplification Using Pseudomorphic hemts\u201d,Microwave journal, 1st May 1990,33, n\u00b0 5, p. 71","journal-title":"Microwave journal"},{"issue":"10","key":"BF03002982_CR8","doi-asserted-by":"publisher","first-page":"2936","DOI":"10.1109\/16.40905","volume":"36","author":"(B.) Kim","year":"1989","unstructured":"Kim (B.), Matyl (R.J.), Wurtele (M.), Bradshaw (K.), Khatibzadeh (M.A.), Tsering (H.Q.), \u201cMillimeter-Wave Power Operation of an A]GaAs\/InGaAs\/GaAs Quantum Well misfet\u201d,ieee Transactions on Electron Devices,36, n\u00b0 10, October 1989, pp. 2936\u20132242.","journal-title":"ieee Transactions on Electron Devices"},{"issue":"10","key":"BF03002982_CR9","doi-asserted-by":"publisher","first-page":"95131","DOI":"10.1109\/16.40911","volume":"36","author":"(P.) Saunier","year":"1989","unstructured":"Saunier (P.), Tsering (H.Q.), \u201cAlGaAs\/InGaAs Heterostructures with Doped Channels for Discrete Devices and Monolithic Amplifiers\u201d,ieee Transactions on Electron Devices,36, n\u00b0 10, October 1989, pp. 95131\u20139935.","journal-title":"ieee Transactions on Electron Devices"},{"key":"BF03002982_CR10","doi-asserted-by":"publisher","first-page":"279","DOI":"10.1109\/TMTT.1976.1128845","volume":"24","author":"(C.A.) Liechti","year":"1976","unstructured":"Liechti (C.A.), \u201cMicrowave field-effect transistors-1976,\u201dieee Trans. Microwave Theory Tech.,24, 279\u2013300 (1976).","journal-title":"ieee Trans. Microwave Theory Tech."},{"issue":"7","key":"BF03002982_CR11","doi-asserted-by":"publisher","first-page":"1429","DOI":"10.1109\/T-ED.1987.23103","volume":"34","author":"(M.B.) Das","year":"1987","unstructured":"Das (M.B.), \u201cMillimeter-wave performance of ultrasubmicrometer-gate field-effect-transistors: a comparison of modfet, mesfet and pbt structures\u201d,ieee Trans. Electron Devices,34, n\u00b0 7, pp. 1429\u20131440(1987).","journal-title":"ieee Trans. Electron Devices"},{"key":"BF03002982_CR12","doi-asserted-by":"publisher","first-page":"419","DOI":"10.1109\/JRPROC.1944.232049","volume":"31","author":"(H.T. Friis","year":"1944","unstructured":"Friis (H.T.) \u201cNoise figures of radio receivers,\u201dProc. ire,31, pp. 419\u2013422, July 1944.","journal-title":"Proc. ire"},{"issue":"9","key":"BF03002982_CR13","doi-asserted-by":"publisher","first-page":"1821","DOI":"10.1109\/22.156610","volume":"40","author":"(B. Hughes","year":"1992","unstructured":"Hughes (B.), \u201cA Temperature Noise Model for Extrinsic fets\u201d,ieee Transactions on Microwave Theory and Techniques,40, n\u00b0 9, November 1992, pp. 1821\u20131832","journal-title":"ieee Transactions on Microwave Theory and Techniques"},{"key":"BF03002982_CR14","first-page":"118","volume":"27","author":"(J.W.) Mathews","year":"1974","unstructured":"Mathews (J.W.), Blakeslee (A.E.),\u201cDefects in Epitaxial Multilayers Misfit Dislocation\u201dJ Cryst. Growth,27, pp. 118\u2013125, 1974.","journal-title":"J Cryst. Growth"},{"key":"BF03002982_CR15","doi-asserted-by":"crossref","first-page":"620","DOI":"10.1116\/1.584415","volume":"B6","author":"(A.) Fischer-Colbrie","year":"1988","unstructured":"Fischer-Colbrie (A.), Miller (J.N.), Laderman (S.J.), Rosner (S.J.), Hull (R.), \u201cGrowth and characterization of AlGaAs\/InGaAs\/GaAs pseudomorphic structures,\u201dJ. Vac. Sci. Tech.,B6, pp. 620\u2013624. 1988.","journal-title":"J. Vac. Sci. Tech."},{"key":"BF03002982_CR16","doi-asserted-by":"crossref","unstructured":"Nguyen (L.D.),Larson (L.E.),Mishra (U.K.), \u201cUltra-highSpeed Modulation-Doped Field-Effect Transistors: A Tutorial review\u201d, Proceeding of the ieee, 80, n\u00b0 4, April 1992.","DOI":"10.1109\/5.135374"},{"key":"BF03002982_CR17","doi-asserted-by":"publisher","first-page":"273","DOI":"10.1109\/55.496455","volume":"17","author":"(M.) Chertouk","year":"1996","unstructured":"Chertouk (M.), Heiss (H.), Xu (D.), Krauss (S.), Klein (W.), Bohm (G.), Trankle (G.), Weimann (G.), \u201cMetamorphic InAlAs\/lnGaAs lattice hemt\u2019s on GaAs substrate with a novel composite channels design\u201d,ieee Elect. Dev. Lett.,17, pp. 273\u2013275, 1996.","journal-title":"ieee Elect. Dev. Lett."},{"issue":"9","key":"BF03002982_CR18","doi-asserted-by":"publisher","first-page":"345","DOI":"10.1109\/55.709638","volume":"19","author":"(M.) Zaknoune","year":"1998","unstructured":"Zaknoune (M.), Bonte (B.), Gaquiere (C.), Cordier (Y.), Druelle (Y.), Theron (D.), Crosnier (Y), \u201cInAlAs\/lnGaAs Metamorphic HEMT with high current density and high breakdown voltage\u201d,ieee Elect. Dev. Lett,19, n\u00b0 9, pp. 345\u2013347, 1998.","journal-title":"ieee Elect. Dev. Lett"},{"key":"BF03002982_CR19","doi-asserted-by":"publisher","first-page":"169","DOI":"10.1049\/el:19930114","volume":"29","author":"(P.) Win","year":"1993","unstructured":"Win (P.), Druelle (Y), Legry (P.), Lepillet (S.), Cappy (A.), Cordier (Y), Fabre (J.), \u201cMicrowave performance of 0.4 \u00bcn gate metamorphic In0.29Al0.71As\/In0.3Ga0.7As hemt on GaAs substrate\u201dElectron Lett.,29, pp. 169\u2013173, 1993.","journal-title":"Electron Lett."},{"key":"BF03002982_CR20","doi-asserted-by":"crossref","unstructured":"Adachi (S.),Physical properties of III-V semiconductor compounds: InP, In As, GaAs, GaP, InGaAs, InGaAsP, John Wiley & Sons, 1992, ISBN #0\u2013471\u201357329\u20139.","DOI":"10.1002\/352760281X"},{"issue":"10","key":"BF03002982_CR21","doi-asserted-by":"publisher","first-page":"2089","DOI":"10.1109\/16.725240","volume":"ED-45","author":"(H.) Happy","year":"1998","unstructured":"Happy (H.), Bollaert (S.), Fourr\u00e9 (H.), Cappy (A.), \u201cNumerical analysis of device performance of metamorphic Iny Al1-y, As\/InxGa11-xAs hemts on GaAs substrate\u201d,ieee Transactions on Electron Devices,ED-45, n\u00b0 10, Oct. 1998, pp. 2089\u20132095.","journal-title":"ieee Transactions on Electron Devices"},{"key":"BF03002982_CR22","doi-asserted-by":"crossref","unstructured":"Nguyen (L.D.),Brown (A.S.),Thompson (M.A.),Jelloian (L.M.), \u201c50 nm Self-Aligned-Gate Pseudomorphic AlInAs\/GalnAs High Electron Mobility Transistors\u201d,ieee Transactions on Electron Devices,39, n\u00b0 9, September 1992.","DOI":"10.1109\/16.155871"},{"key":"BF03002982_CR23","doi-asserted-by":"publisher","first-page":"2243","DOI":"10.1109\/16.40906","volume":"36","author":"(L. D.) Nguyen","year":"1989","unstructured":"Nguyen (L. D.), Tasker (P. J.).Radulescu (D. C.), Eastman (L. F.), \u201cCharacterization of ultra-high-speed pseudomorphic AlGaAs\/ InGaAs (on GaAs) modfet\u2019s,\u201dieee Trans. Electron Devices,36, pp. 2243\u20132248, Oct. 1989.","journal-title":"ieee Trans. Electron Devices"},{"key":"BF03002982_CR24","doi-asserted-by":"crossref","unstructured":"Bollaert (S.),Cordier (Y.),Hoel (V.),Zaknoune (M.),Happy (H.),Lepilliet (S.),Cappy (A.), \u201cMetamorphic In0.4Al0.6As\/In0.4GaQ0.6As hemts on GaAs substrate\u201d,ieee Electron Device Letters,20, n\u00b0 3, mars 1999.","DOI":"10.1109\/55.748908"},{"key":"BF03002982_CR25","unstructured":"Whelan (C. S.),Marsh (RE),Hoke (W. E.),McTaggart (R. A.),McCarrol (C.R),Kazior (K. E.), \u201cGaAs metamorphic hemt (mmhemt): an attractive alternative to InP hemts for hihg performnace low noise and power application\u201d,Proceeding of iprm, May 2000, pp. 337\u2013340"},{"issue":"12","key":"BF03002982_CR26","doi-asserted-by":"publisher","first-page":"585","DOI":"10.1109\/55.63047","volume":"11","author":"(K. L.) Tan","year":"1990","unstructured":"Tan (K. L.), Dia (R. M.), Streit (D.C.), Lin (T.), Trinh (T.Q.), Han(A.C), Liu (P.H.), Chow (P.D.), Yen (C.), \u201c94GHz O.l\u00bcm T-Gate Low-Noise Pseudomorphic InGaAs hemts\u201d,ieee Electron device Letters,11, n\u00b0 12, Dec. 1990, pp. 585\u2013587.","journal-title":"ieee Electron device Letters"},{"key":"BF03002982_CR27","unstructured":"Duhi (K.H.G.),Chao (P.C.),Ho (P.),Kao (M. Y.),Smith (P. M.),Ballingall (J.M.),Jabra (A.A.), \u201cHigh-Performance InP-based hemt Millimeter-wave Low-Noise Amplifier\u201d,ieee mtt-s International Microwave Symposium Digest, 1989, pp. 805\u2013808."},{"issue":"5","key":"BF03002982_CR28","doi-asserted-by":"publisher","first-page":"114","DOI":"10.1109\/75.89081","volume":"1","author":"(H.G.) Duh","year":"1991","unstructured":"Duh (H.G.), Chao (P.C.), Liu (S.M.J.), Ho (P.), Kao (M.Y.), Ballingall (J.M.), \u201cA Super Low-Noise 0.1 \u00bcm T-Gate InAlAsInGaAs-InP hemt\u201d,ieee Microwave and Guided Wave letters,1, n\u00b0 5, May 1991, pp. 114\u2013116.","journal-title":"ieee Microwave and Guided Wave letters"},{"issue":"4","key":"BF03002982_CR29","doi-asserted-by":"publisher","first-page":"149","DOI":"10.1109\/55.75746","volume":"12","author":"(D.C.) Streit","year":"1991","unstructured":"Streit (D.C.), Tan (K.L.), Dia (R.M.), Liu (J.K.), Han (A.C.), Velebir (J.R.), Wang (S.K.), Trinh (T.Q.), Chow (P.M.D.), Liu (P.H.), Yen (H.C), \u201cHigh-Gain W-Band Pseudomorphic InGaAs Power hemts\u201dieee Electron Device letters,12, n\u00b0 4, April 1991, pp. 149\u2013150.","journal-title":"ieee Electron Device letters"},{"key":"BF03002982_CR30","unstructured":"Kong (W.M.T.),Wang (S.W.),Chao (PC),Tu (D.W.),Hwang (K.),Tang (O.S.A.),Liu (S.M.),Hu (P.),Nichols (K.),Heaton (J.), \u201cVery High Efficiency V-Band Power InP hemt mmics\u201d, To be published inElectron Device Letters."}],"container-title":["Annales Des T\u00e9l\u00e9communications"],"original-title":[],"language":"fr","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/BF03002982.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/BF03002982\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/BF03002982.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,7,7]],"date-time":"2021-07-07T09:50:33Z","timestamp":1625651433000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/BF03002982"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2001,1]]},"references-count":30,"journal-issue":{"issue":"1-2","published-print":{"date-parts":[[2001,1]]}},"alternative-id":["BF03002982"],"URL":"https:\/\/doi.org\/10.1007\/bf03002982","relation":{},"ISSN":["0003-4347","1958-9395"],"issn-type":[{"value":"0003-4347","type":"print"},{"value":"1958-9395","type":"electronic"}],"subject":[],"published":{"date-parts":[[2001,1]]}}}