{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T11:02:50Z","timestamp":1740135770850,"version":"3.37.3"},"reference-count":32,"publisher":"Springer Science and Business Media LLC","issue":"12","license":[{"start":{"date-parts":[[2017,8,30]],"date-time":"2017-08-30T00:00:00Z","timestamp":1504051200000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"funder":[{"DOI":"10.13039\/501100003406","name":"Tekes","doi-asserted-by":"publisher","award":["Dnro 3246\/31\/2014"],"award-info":[{"award-number":["Dnro 3246\/31\/2014"]}],"id":[{"id":"10.13039\/501100003406","id-type":"DOI","asserted-by":"publisher"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Circuits Syst Signal Process"],"published-print":{"date-parts":[[2017,12]]},"DOI":"10.1007\/s00034-017-0641-3","type":"journal-article","created":{"date-parts":[[2017,8,30]],"date-time":"2017-08-30T11:44:48Z","timestamp":1504093488000},"page":"5062-5078","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["A 139\u00a0nW, 67\u00a0 $$\\hbox {ppm}\/^\\circ \\hbox {C}$$ ppm \/ \u2218 C BJT-CMOS-Based Voltage Reference Circuit"],"prefix":"10.1007","volume":"36","author":[{"given":"Shailesh Singh","family":"Chouhan","sequence":"first","affiliation":[]},{"given":"Kari","family":"Halonen","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2017,8,30]]},"reference":[{"issue":"4","key":"641_CR1","doi-asserted-by":"crossref","first-page":"2347","DOI":"10.1109\/COMST.2015.2444095","volume":"17","author":"A Al-Fuqaha","year":"2015","unstructured":"A. Al-Fuqaha, M. Guizani, M. Mohammadi, M. Aledhari, M. Ayyash, Internet of things: a survey on enabling technologies, protocols, and applications. IEEE Commun. Surv. Tutor. 17(4), 2347\u20132376 (2015)","journal-title":"IEEE Commun. Surv. Tutor."},{"issue":"5","key":"641_CR2","doi-asserted-by":"crossref","first-page":"670","DOI":"10.1109\/4.760378","volume":"34","author":"H Banba","year":"1999","unstructured":"H. Banba, H. Shiga, A. Umezawa, T. Miyaba, T. Tanzawa, S. Atsumi, K. Sakui, A CMOS bandgap reference circuit with sub-1-V operation. IEEE J. Solid-State Circuits 34(5), 670\u2013674 (1999)","journal-title":"IEEE J. Solid-State Circuits"},{"key":"641_CR3","volume-title":"CMOS: Circuit Design, Layout, and Simulation","author":"RJ Baker","year":"2004","unstructured":"R.J. Baker, CMOS: Circuit Design, Layout, and Simulation (Wiley-IEEE Press, New York, 2004)"},{"issue":"3","key":"641_CR4","doi-asserted-by":"crossref","first-page":"37","DOI":"10.1109\/MSSC.2013.2266074","volume":"5","author":"P Brokaw","year":"2013","unstructured":"P. Brokaw, United States Patent 4,250,445. IEE Solid-State Circuits Mag. 5(3), 37\u201341 (2013)","journal-title":"IEE Solid-State Circuits Mag."},{"key":"641_CR5","doi-asserted-by":"crossref","unstructured":"P. Changhae, J.P. John, K. Klein, J. Teplik, J. Caravella, J. Whitfield, K. Papworth, C. Sunny, Reversal of temperature dependence of integrated circuits operating at very low voltages, in Proceedings of International Electron Devices Meeting, pp. 71\u201374, Washington DC, USA (1995)","DOI":"10.1109\/IEDM.1995.497185"},{"issue":"3","key":"641_CR6","first-page":"406","volume":"16","author":"B Chatterjee","year":"2017","unstructured":"B. Chatterjee, N. Modak, A. Amaravati, D. Mistry, D. Das, M.S. Baghini, A sub-1V, 120 nW, PVT-variation tolerant, tunable and scalable voltage reference with 60 dB PSNA. IEEE Trans. Nanotechnol. 16(3), 406\u2013410 (2017)","journal-title":"IEEE Trans. Nanotechnol."},{"issue":"3","key":"641_CR7","doi-asserted-by":"crossref","first-page":"399406","DOI":"10.1007\/s10470-014-0361-6","volume":"80","author":"SS Chouhan","year":"2014","unstructured":"S.S. Chouhan, K. Halonen, Design and implementation of all MOS micro-power voltage reference circuit. Analog Integr. Circuits Signal Process. 80(3), 399406 (2014)","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"641_CR8","doi-asserted-by":"crossref","unstructured":"D. Colombo, F. Werle, G. Wirth, S. Bampi, A CMOS 25.3 $$\\text{ppm}\/^\\circ \\text{ C }$$ ppm \/ \u2218 C bandgap voltage reference using self-cascode composite transistor, in IEEE 3rd Latin American Symposium on Circuits and Systems (LASCAS), pp. 1\u20134, Playa del Carmen (2012)","DOI":"10.1109\/LASCAS.2012.6180360"},{"key":"641_CR9","volume-title":"Superior-Order Curvature-Correction Techniques for Voltage References","author":"P Cosmin Radu","year":"2009","unstructured":"P. Cosmin Radu, Superior-Order Curvature-Correction Techniques for Voltage References (Springer, Berlin, 2009)"},{"issue":"3","key":"641_CR10","doi-asserted-by":"crossref","first-page":"662","DOI":"10.1109\/TCSI.2014.2374832","volume":"62","author":"Q Duan","year":"2015","unstructured":"Q. Duan, J. Roh, A 1.2-V 4.2ppm \/ $${}^\\circ \\text{ C }$$ \u2218 C high-order curvature-compensated CMOS bandgap reference. IEEE Trans. Circuits Syst. I Regular Papers 62(3), 662\u2013670 (2015)","journal-title":"IEEE Trans. Circuits Syst. I Regular Papers"},{"issue":"4","key":"641_CR11","doi-asserted-by":"crossref","first-page":"943","DOI":"10.1109\/JSSC.2015.2503350","volume":"51","author":"D El-Damak","year":"2016","unstructured":"D. El-Damak, A.P. Chandrakasan, A 10 nW1 $$\\mu \\text{ W }$$ \u03bc W Power Management IC With Integrated Battery Management and Self-Startup for Energy Harvesting Applications. IEEE J. Solid-State Circuits 51(4), 943\u2013954 (2016)","journal-title":"IEEE J. Solid-State Circuits"},{"key":"641_CR12","doi-asserted-by":"crossref","unstructured":"I.M. Filanovsky, Voltage reference using mutual compensation of mobility and threshold voltage temperature effects, in Proceedings of Emerging Technologies for the 21st Century IEEE International Symposium on Circuits and Systems, vol. 5, pp. 197\u2013200, Geneva (2000)","DOI":"10.1109\/ISCAS.2000.857397"},{"issue":"2","key":"641_CR13","doi-asserted-by":"crossref","first-page":"203","DOI":"10.1007\/s10470-015-0530-2","volume":"83","author":"L Gengchen","year":"2015","unstructured":"L. Gengchen, R. Fuentes, H. Koser, K. Tolga, A self-powered power conditioning circuit for battery-free energy scavenging applications. Analog Integr. Circuits Signal Process. 83(2), 203\u2013207 (2015)","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"641_CR14","doi-asserted-by":"crossref","unstructured":"J. Gronicz, M. Pulkkinen, M. Yceta, K. Halonen, A $$2\\mu \\text{ A }$$ 2 \u03bc A temperature compensated MEMS-based real time clock with $$\\pm 4$$ \u00b1 4 ppm timekeeping accuracy, in IEEE International Symposium on Circuits and Systems (ISCAS), pp. 514\u2013517, Melbourne VIC (2014)","DOI":"10.1109\/ISCAS.2014.6865185"},{"issue":"6","key":"641_CR15","doi-asserted-by":"crossref","first-page":"671","DOI":"10.1109\/4.217982","volume":"28","author":"S Ho-Jun","year":"1993","unstructured":"S. Ho-Jun, K. Choong-Ki, A temperature-stabilized SOI voltage reference based on threshold voltage difference between enhancement and depletion NMOSFETs. IEEE J. Solid-State Circuits 28(6), 671\u2013677 (1993)","journal-title":"IEEE J. Solid-State Circuits"},{"issue":"9","key":"641_CR16","doi-asserted-by":"crossref","first-page":"882","DOI":"10.1109\/TCSII.2006.881813","volume":"53","author":"PH Huang","year":"2006","unstructured":"P.H. Huang, H. Lin, Y.T. Lin, A simple subthreshold CMOS voltage reference circuit with channel- length modulation compensation. IEEE Trans. Circuits Syst. II Express Briefs 53(9), 882\u2013885 (2006)","journal-title":"IEEE Trans. Circuits Syst. II Express Briefs"},{"issue":"1","key":"641_CR17","doi-asserted-by":"crossref","first-page":"53","DOI":"10.1007\/s10470-017-0928-0","volume":"91","author":"S Huang","year":"2017","unstructured":"S. Huang, S. Diao, L. Fujiang, A 0.7-V, $$8.9-\\mu \\text{ A }$$ 8.9 - \u03bc A compact temperature-compensated CMOS subthreshold voltage reference with high reliability, Analog Integr. Circuits Signal Process. 91(1), 53\u201361 (2017)","journal-title":"Analog Integr. Circuits Signal Process."},{"key":"641_CR18","doi-asserted-by":"crossref","unstructured":"S. Jamali-Zavareh, J. Salomaa, M. Pulkkinen, S.S. Chouhan, K. Halonen, A $$1.3-\\mu \\text{ W }$$ 1.3 - \u03bc W 12-bit incremental $${\\varDelta \\varSigma }$$ \u0394 \u03a3 ADC for energy harvesting sensor applications, in IEEE Nordic Circuits and Systems Conference (NORCAS), pp. 1\u20134, Copenhagen (2016)","DOI":"10.1109\/NORCHIP.2016.7792874"},{"key":"641_CR19","doi-asserted-by":"crossref","unstructured":"Y. Ji, C. Jeon, H. Son, B. Kim, H.J. Park, J.Y. Sim, A 9.3nW all-in-one bandgap voltage and current reference circuit, in IEEE International Solid-State Circuits Conference (ISSCC), pp. 100\u2013101, San Francisco, CA (2017)","DOI":"10.1109\/ISSCC.2017.7870280"},{"issue":"3","key":"641_CR20","doi-asserted-by":"crossref","first-page":"623","DOI":"10.1109\/JSSC.2016.2627544","volume":"52","author":"J Jiang","year":"2017","unstructured":"J. Jiang, W. Shu, J.S. Chang, A 5.6 $$\\text{ ppm }\/{}^\\circ \\text{ C }$$ ppm \/ \u2218 C Temperature Coefficient, 87-dB PSRR, Sub-1-V Voltage Reference in 65-nm CMOS Exploiting the Zero-Temperature-Coefficient Point. IEEE J. Solid-State Circuits 52(3), 623\u2013633 (2017)","journal-title":"IEEE J. Solid-State Circuits"},{"issue":"1","key":"641_CR21","doi-asserted-by":"crossref","first-page":"79","DOI":"10.1007\/s10470-013-0122-y","volume":"77","author":"W Jianhui","year":"2013","unstructured":"W. Jianhui, C. Chao, S. Haifeng, H. Cheng, L. Hao, A high PSRR CMOS voltage reference with 1.2 V operation. Analog Integr. Circuits Signal Process. 77(1), 79\u201386 (2013)","journal-title":"Analog Integr. Circuits Signal Process."},{"issue":"1","key":"641_CR22","doi-asserted-by":"crossref","first-page":"146","DOI":"10.1109\/JSSC.2002.806265","volume":"38","author":"L Ka Nang","year":"2003","unstructured":"L. Ka Nang, P.K.T. Mok, A CMOS voltage reference based on weighted $${\\varDelta }\\text{ V }_{GS}$$ \u0394 V G S for CMOS low-dropout linear regulators. IEEE J. Solid-State Circuits 38(1), 146\u2013150 (2003)","journal-title":"IEEE J. Solid-State Circuits"},{"issue":"2","key":"641_CR23","doi-asserted-by":"crossref","first-page":"421","DOI":"10.1007\/s00034-015-0092-7","volume":"35","author":"L Lian-xi","year":"2016","unstructured":"L. Lian-xi, M. Jun-Chao, M. Ning, T. Wei, Z. Zhang-ming, Y. Yin-tang, An ultra-low-power integrated RF energy harvesting system in 65-nm CMOS process. Circuit Syst. Signal Process. 35(2), 421\u2013441 (2016)","journal-title":"Circuit Syst. Signal Process."},{"issue":"12","key":"641_CR24","doi-asserted-by":"crossref","first-page":"863","DOI":"10.1049\/el.2013.3417","volume":"50","author":"OE Mattia","year":"2014","unstructured":"O.E. Mattia, H. Klimach, S. Bampi, Resistorless BJT bias and curvature compensation circuit at 3.4 nW for CMOS bandgap voltage references. Electron. Lett. 50(12), 863\u2013864 (2014)","journal-title":"Electron. Lett."},{"issue":"4","key":"641_CR25","doi-asserted-by":"crossref","first-page":"526","DOI":"10.1109\/4.991391","volume":"37","author":"KL Nang","year":"2002","unstructured":"K.L. Nang, P.K.T. Mok, A sub-1-V $$15-\\text{ ppm }\/^\\circ \\text{ C }$$ 15 - ppm \/ \u2218 C CMOS bandgap voltage reference without requiring low threshold voltage device. IEEE J. Solid-State Circuits 37(4), 526\u2013530 (2002)","journal-title":"IEEE J. Solid-State Circuits"},{"key":"641_CR26","unstructured":"Temperature range summary, Maxim integrated. https:\/\/www.maximintegrated.com\/en\/markets\/military-aerospace\/temperature-range-summary.html"},{"issue":"7","key":"641_CR27","doi-asserted-by":"crossref","first-page":"2047","DOI":"10.1109\/JSSC.2009.2021922","volume":"44","author":"K Ueno","year":"2009","unstructured":"K. Ueno, T. Hirose, T. Asai, Y. Amemiya, A 300 nW, 15 $$\\text{ ppm }\/{}^\\circ \\text{ C }$$ ppm \/ \u2218 C , 20 ppm\/V CMOS voltage reference circuit consisting of subthreshold MOSFETs. IEEE J. Solid-State Circuits 44(7), 2047\u20132054 (2009)","journal-title":"IEEE J. Solid-State Circuits"},{"key":"641_CR28","doi-asserted-by":"crossref","unstructured":"R. Widlar, New developments in IC voltage regulators, in IEEE International Solid-State Circuits Conference. Digest of Technical Papers, pp. 158\u2013159, Philadelphia, USA (1970)","DOI":"10.1109\/ISSCC.1970.1154790"},{"issue":"2","key":"641_CR29","first-page":"171176","volume":"66","author":"M Xin","year":"2011","unstructured":"M. Xin, M. Ying-qian, Z. Ze-kun, B. Zhang, Lu Yang, A 1.3 $$\\text{ ppm }\/{}^\\circ \\text{ C }$$ ppm \/ \u2218 C BiCMOS bandgap voltage reference using piecewise-exponential compensation technique, Analog Integr. Circuits. Signal Process. 66(2), 171176 (2011)","journal-title":"Signal Process."},{"issue":"3","key":"641_CR30","doi-asserted-by":"crossref","first-page":"623","DOI":"10.1007\/s10470-014-0424-8","volume":"81","author":"K Yang","year":"2014","unstructured":"K. Yang, H. Jiang, W. Yang, M. Frederic, C. Zhang, Z. Wang, L. Qingliang, J. Wen, Lifetime tracing of cardiopulmonary sounds with low-power sound sensor stick connected to wireless mobile network. Analog Integr. Circuits Signal Process. 81(3), 623\u2013634 (2014)","journal-title":"Analog Integr. Circuits Signal Process."},{"issue":"4","key":"641_CR31","doi-asserted-by":"crossref","first-page":"1044","DOI":"10.1109\/JSSC.2016.2638464","volume":"52","author":"B Yousefzadeh","year":"2017","unstructured":"B. Yousefzadeh, S.H. Shalmany, K.A.A. Makinwa, A BJT-Based Temperature-to-Digital Converter With 60 mK ( $$3\\sigma $$ 3 \u03c3 ) Inaccuracy From $$-55^\\circ \\text{ C }$$ - 55 \u2218 C to +125 $${}^\\circ \\text{ C }$$ \u2218 C in 0.16 $$\\mu \\text{ m }$$ \u03bc m CMOS. IEEE J. Solid-State Circuits 52(4), 1044\u20131052 (2017)","journal-title":"IEEE J. Solid-State Circuits"},{"issue":"11","key":"641_CR32","doi-asserted-by":"crossref","first-page":"815","DOI":"10.1049\/el.2014.4521","volume":"51","author":"H Zhang","year":"2015","unstructured":"H. Zhang, Z. Xiao, X. Tan, H. Min, Low-power sub-1-V compact bandgap reference for passive RFID tags. Electron. Lett. 51(11), 815\u2013816 (2015)","journal-title":"Electron. Lett."}],"container-title":["Circuits, Systems, and Signal Processing"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s00034-017-0641-3\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00034-017-0641-3.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00034-017-0641-3.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,10,16]],"date-time":"2020-10-16T17:21:47Z","timestamp":1602868907000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s00034-017-0641-3"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,8,30]]},"references-count":32,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2017,12]]}},"alternative-id":["641"],"URL":"https:\/\/doi.org\/10.1007\/s00034-017-0641-3","relation":{},"ISSN":["0278-081X","1531-5878"],"issn-type":[{"type":"print","value":"0278-081X"},{"type":"electronic","value":"1531-5878"}],"subject":[],"published":{"date-parts":[[2017,8,30]]}}}