{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,2,21]],"date-time":"2025-02-21T11:02:52Z","timestamp":1740135772238,"version":"3.37.3"},"reference-count":18,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2017,10,17]],"date-time":"2017-10-17T00:00:00Z","timestamp":1508198400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Circuits Syst Signal Process"],"published-print":{"date-parts":[[2018,6]]},"DOI":"10.1007\/s00034-017-0685-4","type":"journal-article","created":{"date-parts":[[2017,10,17]],"date-time":"2017-10-17T10:34:48Z","timestamp":1508236488000},"page":"2278-2298","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["A $$0.058\\,\\hbox {mm}^2\\,\\,24\\,\\upmu \\hbox {W}$$ 0.058 mm 2 24 \u03bc W Temperature Sensor in $$40\\,\\hbox {nm}$$ 40 nm CMOS Process with $${\\pm }\\,0.5\\,^{\\circ }\\hbox {C}$$ \u00b1 0.5 \u2218 C Inaccuracy from \u2212\u00a055 to $$175\\,^{\\circ }\\hbox {C}$$ 175 \u2218 C"],"prefix":"10.1007","volume":"37","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-5086-0971","authenticated-orcid":false,"given":"Di","family":"Zhu","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liter","family":"Siek","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2017,10,17]]},"reference":[{"key":"685_CR1","unstructured":"A. Bakker, J.H. Huijsing, A low-cost high-accuracy CMOS smart temperature sensor, in IEEE Proc. ESSCIRC (1999), pp. 302\u2013305"},{"key":"685_CR2","doi-asserted-by":"crossref","unstructured":"P. Chen, C.-C. Chen, Y.-H. Peng, K.-M. Wang, Y.-S. Wang, A time-domain SAR smart temperature sensor with curvature compensation and a $$3\\sigma $$ 3 \u03c3 inaccuracy of $$-0.4\\,^{\\circ }\\text{C} \\sim +0.6\\,^{\\circ }\\text{ C }$$ - 0.4 \u2218 C \u223c + 0.6 \u2218 C over a $$0\\,^{\\circ }{\\rm C}$$ 0 \u2218 C to $$90\\,^{\\circ }{\\rm C}$$ 90 \u2218 C range. IEEE J. Solid State Circuits 45(3), 600\u2013609 (2010)","DOI":"10.1109\/JSSC.2010.2040658"},{"issue":"12","key":"685_CR3","doi-asserted-by":"crossref","first-page":"3316","DOI":"10.1109\/JSEN.2011.2158093","volume":"11","author":"RP Fisk","year":"2011","unstructured":"R.P. Fisk, S.M. Rezaul Hasan, A calibration-free low-cost process-compensated temperature sensor in 130 nm CMOS. IEEE Sens. J. 11(12), 3316\u20133329 (2011)","journal-title":"IEEE Sens. J."},{"key":"685_CR4","doi-asserted-by":"crossref","first-page":"2241","DOI":"10.1109\/TCSI.2013.2246254","volume":"I","author":"S Hwang","year":"2013","unstructured":"S. Hwang, K. Jabeom, K. Kisoo, L. Hokyu, K. Chulwoo, A $$0.008\\,\\text{ mm }^{2}\\,\\,500 \\,\\,\\mu \\text{ W }\\,\\,469\\,\\,\\text{ kS }\/\\text{ s }$$ 0.008 mm 2 500 \u03bc W 469 kS \/ s frequency-to-digital converter based CMOS temperature sensor with process variation compensation. IEEE Trans. Circuits Syst. I, 2241\u20132248 (2013)","journal-title":"IEEE Trans. Circuits Syst."},{"key":"685_CR5","unstructured":"K. Kim, H. Lee, S. Jung, C. Kim, A $$366\\text{ ks }\/\\text{ s }\\,\\,400\\text{ uw }\\,\\,0.0013\\,\\,{mm}^{2}$$ 366 ks \/ s 400 uw 0.0013 m m 2 frequency-to-digital converter based CMOS temperature sensor utilizing multiphase clock, in Proc. IEEE Custom Integrated Circuits Conf. (CICC) (2009), pp. 203\u2013206"},{"issue":"12","key":"685_CR6","first-page":"891","volume":"II","author":"MK Law","year":"2009","unstructured":"M.K. Law, A. Bermak, A 405-nw CMOS temperature sensor based on linear MOS operation. IEEE Trans. Circuits Syst. II(12), 891\u2013895 (2009)","journal-title":"IEEE Trans. Circuits Syst."},{"key":"685_CR7","unstructured":"Y.W. Li, H. Lakdawala, A. Raychowdhury, G. Taylor, K. Soumyanath, A $$1.05\\,\\,\\text{ V }\\,\\,1.6\\,\\,\\text{ mW }\\,\\,0.45^{\\circ }\\text{ C }\\,\\,3\\sigma $$ 1.05 V 1.6 mW 0 . 45 \u2218 C 3 \u03c3 -resolution $$\\varDelta \\varSigma $$ \u0394 \u03a3 -based temperature sensor with parasitic-resistance compensation in 32 nm CMOS, in IEEE ISSCC Dig. Tech. Papers, vol. 1 (2009), pp. 340\u2013341"},{"key":"685_CR8","unstructured":"Y.S. Lin, D. Sylvester, D. Blaauw, An ultra low power 1V, 220nW temperature sensor for passive wireless applications, in Proc. IEEE Custom Integrated Circuits Conf. (CICC), (2008), pp. 507\u2013510"},{"key":"685_CR9","unstructured":"G.A. Maher, O.W. Freitas, T. Williams, Sensor sharing fuel gauge. U.S. Patent Application 13\/603,632, 5 Sept 2012"},{"key":"685_CR10","unstructured":"G.C.M. Meijer, Integrated circuits and components for bandgap references and temperature transducers. Ph.D. thesis, Delft University of Technology, Delft, The Netherlands (1982)"},{"issue":"5","key":"685_CR11","doi-asserted-by":"crossref","first-page":"571","DOI":"10.1109\/TCS.1987.1086170","volume":"34","author":"K Nagaraj","year":"1987","unstructured":"K. Nagaraj, T. Viswanathan, K. Singhal, J. Vlach, Switched capacitor circuits with reduced sensitivity to amplifier gain. IEEE Trans. Circuits Syst. 34(5), 571\u2013574 (1987)","journal-title":"IEEE Trans. Circuits Syst."},{"issue":"21","key":"685_CR12","doi-asserted-by":"crossref","first-page":"1103","DOI":"10.1049\/el:19860756","volume":"22","author":"K Nagaraj","year":"1986","unstructured":"K. Nagaraj, J. Vlach, T. Viswanathan, K. Singhal, Switched capacitor integrator with reduced sensitivity to amplifier gain. Electron. Lett. 22(21), 1103\u20131105 (1986)","journal-title":"Electron. Lett."},{"key":"685_CR13","doi-asserted-by":"crossref","DOI":"10.1007\/1-4020-5258-8","volume-title":"Precision Temperature Sensors in CMOS Technology","author":"MA Pertijs","year":"2006","unstructured":"M.A. Pertijs, J.H. Huijsing, Precision Temperature Sensors in CMOS Technology (Springer, Dordrecht, 2006)"},{"issue":"12","key":"685_CR14","doi-asserted-by":"crossref","first-page":"2805","DOI":"10.1109\/JSSC.2005.858476","volume":"40","author":"MA Pertijs","year":"2005","unstructured":"M.A. Pertijs, K.A. Makinwa, J.H. Huijsing, A CMOS smart temperature sensor with a $$3\\sigma $$ 3 \u03c3 inaccuracy of $$\\pm 0.1\\,\\,\\text{ c }$$ \u00b1 0.1 c from $$-55^{\\circ }\\text{ c }$$ - 55 \u2218 c to $$125^{\\circ }\\text{ c }$$ 125 \u2218 c . IEEE J. Solid State Circuits 40(12), 2805\u20132815 (2005)","journal-title":"IEEE J. Solid State Circuits"},{"key":"685_CR15","unstructured":"K. Souri, Y. Chae, K. Makinwa, A CMOS temperature sensor with a voltage-calibrated inaccuracy of $$\\pm 0.15^{\\circ }\\text{ C }\\,\\,(3\\sigma )$$ \u00b1 0 . 15 \u2218 C ( 3 \u03c3 ) from $$-55^{\\circ }\\text{ C }$$ - 55 \u2218 C to $$125^{\\circ }\\text{ C }$$ 125 \u2218 C , in IEEE ISSCC Dig. Tech. Papers, (2012), pp. 208\u2013210"},{"key":"685_CR16","unstructured":"K. Souri, M. Kashmiri, K. Makinwa, A CMOS temperature sensor with an energy-efficient zoom ADC and an Inaccuracy of $$\\pm 0.25^{\\circ }\\text{ C }(3\\sigma )$$ \u00b1 0 . 25 \u2218 C ( 3 \u03c3 ) from $$-55^{\\circ }\\text{ C }$$ - 55 \u2218 C to $$125^{\\circ }\\text{ C }$$ 125 \u2218 C , in IEEE ISSCC Dig. Tech. Papers (2010), pp. 310\u2013311"},{"key":"685_CR17","unstructured":"K. Souri, K. Makinwa, A $$0.12\\,\\,\\text{ mm }^{2}\\,\\,7.4 \\,\\mu \\text{ W }$$ 0.12 mm 2 7.4 \u03bc W micropower temperature sensor with an inaccuracy of $$\\pm 0.2^{\\circ }\\text{ C }\\,\\,(3\\sigma )$$ \u00b1 0 . 2 \u2218 C ( 3 \u03c3 ) from $$-55^{\\circ }\\text{ C }$$ - 55 \u2218 C to $$125^{\\circ }\\text{ C }$$ 125 \u2218 C , in IEEE Proc. ESSCIRC (2010), pp. 282\u2013285"},{"issue":"6","key":"685_CR18","doi-asserted-by":"crossref","first-page":"774","DOI":"10.1109\/JSSC.1978.1052049","volume":"13","author":"YP Tsividis","year":"1978","unstructured":"Y.P. Tsividis, R.W. Ulmer, A CMOS voltage reference. IEEE J. Solid-State Circuits 13(6), 774\u2013778 (1978)","journal-title":"IEEE J. Solid-State Circuits"}],"container-title":["Circuits, Systems, and Signal Processing"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s00034-017-0685-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00034-017-0685-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00034-017-0685-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,27]],"date-time":"2023-08-27T07:28:43Z","timestamp":1693121323000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s00034-017-0685-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,10,17]]},"references-count":18,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2018,6]]}},"alternative-id":["685"],"URL":"https:\/\/doi.org\/10.1007\/s00034-017-0685-4","relation":{},"ISSN":["0278-081X","1531-5878"],"issn-type":[{"type":"print","value":"0278-081X"},{"type":"electronic","value":"1531-5878"}],"subject":[],"published":{"date-parts":[[2017,10,17]]}}}