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Specifically tailored for mid-band 5G technology, the VD is designed for operation within the 1240\u20131300\u00a0MHz satellite band. The innovative design employs an inverse class-F architecture, incorporating a <jats:inline-formula><jats:alternatives><jats:tex-math>$$\\lambda \/8$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mrow>\n                    <mml:mi>\u03bb<\/mml:mi>\n                    <mml:mo>\/<\/mml:mo>\n                    <mml:mn>8<\/mml:mn>\n                  <\/mml:mrow>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> short-ended transmission line (TL) connected to the diode anode and a (<jats:inline-formula><jats:alternatives><jats:tex-math>$$\\lambda \/12$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mrow>\n                    <mml:mi>\u03bb<\/mml:mi>\n                    <mml:mo>\/<\/mml:mo>\n                    <mml:mn>12<\/mml:mn>\n                  <\/mml:mrow>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>) open-ended transmission line linked to the input of the voltage doubler. This configuration aims to reshape voltage and current waveforms, effectively reducing losses and series resistance in the diode. Dual-coupled transmission lines (CTLs) are utilized to provide passive voltage boosting at low-input power levels. The suggested voltage doubler is implemented using RO4003C substrate material with a dielectric relative permittivity (<jats:inline-formula><jats:alternatives><jats:tex-math>$${\\upvarepsilon }_{r}$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:msub>\n                    <mml:mi>\u03b5<\/mml:mi>\n                    <mml:mi>r<\/mml:mi>\n                  <\/mml:msub>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>) of 3.38 and a thickness of 0.81\u00a0mm. Measured results demonstrate a minimum input return loss of\u2009\u2212\u200929.3\u00a0dB at 1.25\u00a0GHz, operating seamlessly within a frequency band from 1.18 to 1.32\u00a0GHz. The measured conversion efficiency is 45.2% at an input power (<jats:italic>P<\/jats:italic><jats:sub>in<\/jats:sub>) of\u2009\u2212\u20094dBm. Furthermore, the peak RF\u2013DC efficiency reaches 50% at an input power of 0dBm. Simulated results predict a remarkable conversion efficiency of 60% and 68.7% at \u2212\u20094dBm and 0 dBm, respectively. In addition to its exceptional performance, the suggested voltage doubler exhibits an experimental DC output voltage of 0.53\u00a0V at <jats:inline-formula><jats:alternatives><jats:tex-math>$$P_{{{\\text{in}}}} = - 10{\\text{dBm}}$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mrow>\n                    <mml:msub>\n                      <mml:mi>P<\/mml:mi>\n                      <mml:mtext>in<\/mml:mtext>\n                    <\/mml:msub>\n                    <mml:mo>=<\/mml:mo>\n                    <mml:mo>-<\/mml:mo>\n                    <mml:mn>10<\/mml:mn>\n                    <mml:mtext>dBm<\/mml:mtext>\n                  <\/mml:mrow>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula> and a saturated DC voltage of 3.4\u00a0V at an input power of 10dBm under a load terminal resistance of 8\u00a0K\u03a9. Finally, the dimensions of the proposed voltage doubler are <jats:inline-formula><jats:alternatives><jats:tex-math>$$25.3 \\times 10.5 {\\text{mm}}^{{2}}$$<\/jats:tex-math><mml:math xmlns:mml=\"http:\/\/www.w3.org\/1998\/Math\/MathML\">\n                  <mml:mrow>\n                    <mml:mn>25.3<\/mml:mn>\n                    <mml:mo>\u00d7<\/mml:mo>\n                    <mml:mn>10.5<\/mml:mn>\n                    <mml:msup>\n                      <mml:mrow>\n                        <mml:mtext>mm<\/mml:mtext>\n                      <\/mml:mrow>\n                      <mml:mn>2<\/mml:mn>\n                    <\/mml:msup>\n                  <\/mml:mrow>\n                <\/mml:math><\/jats:alternatives><\/jats:inline-formula>.<\/jats:p>","DOI":"10.1007\/s00034-024-02660-y","type":"journal-article","created":{"date-parts":[[2024,4,4]],"date-time":"2024-04-04T17:01:41Z","timestamp":1712250101000},"page":"4073-4092","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Low-Power Energy Harvesting Voltage Doubler Using CTLs Based on Inverse Class-F Configuration Compatible with Fifth Generation"],"prefix":"10.1007","volume":"43","author":[{"ORCID":"https:\/\/orcid.org\/0000-0001-8501-1101","authenticated-orcid":false,"given":"Marwa","family":"Mansour","sequence":"first","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2024,4,4]]},"reference":[{"issue":"1","key":"2660_CR1","doi-asserted-by":"publisher","first-page":"252","DOI":"10.1109\/JESTPE.2014.2319056","volume":"3","author":"TW Barton","year":"2015","unstructured":"T.W. 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