{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,7,14]],"date-time":"2026-07-14T16:37:32Z","timestamp":1784047052005,"version":"3.55.0"},"reference-count":27,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2025,4,11]],"date-time":"2025-04-11T00:00:00Z","timestamp":1744329600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,4,11]],"date-time":"2025-04-11T00:00:00Z","timestamp":1744329600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Circuits Syst Signal Process"],"published-print":{"date-parts":[[2025,8]]},"DOI":"10.1007\/s00034-025-03108-7","type":"journal-article","created":{"date-parts":[[2025,4,11]],"date-time":"2025-04-11T16:27:27Z","timestamp":1744388847000},"page":"5455-5474","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["NQS Small-Signal Circuit Modelling of GaN-SOI-FinFET for RF\/Wireless Applications"],"prefix":"10.1007","volume":"44","author":[{"given":"Vandana Singh","family":"Rajawat","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Bharat","family":"Choudhary","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"ORCID":"https:\/\/orcid.org\/0000-0001-8043-8253","authenticated-orcid":false,"given":"Ajay","family":"Kumar","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2025,4,11]]},"reference":[{"key":"3108_CR1","doi-asserted-by":"publisher","first-page":"79","DOI":"10.1016\/j.spmi.2016.12.009","volume":"102","author":"MS Adhikari","year":"2017","unstructured":"M.S. Adhikari, Y. Singh, High performance multi-channel MOSFET on InGaAs for RF amplifiers. Superlattices Microstruct. 102, 79\u201387 (2017). https:\/\/doi.org\/10.1016\/j.spmi.2016.12.009","journal-title":"Superlattices Microstruct."},{"key":"3108_CR2","doi-asserted-by":"publisher","first-page":"151","DOI":"10.1016\/j.aeue.2017.06.004","volume":"79","author":"J Ajayan","year":"2017","unstructured":"J. Ajayan, D. Nirmal, P. Prajoon, J.C. Pravin, Analysis of nanometer-scale InGaAs\/InAs\/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications. AEU-Int. J. Electron. Commun. 79, 151\u2013157 (2017). https:\/\/doi.org\/10.1016\/j.aeue.2017.06.004","journal-title":"AEU-Int. J. Electron. Commun."},{"key":"3108_CR3","unstructured":"C.K. Alexander, M.N. Sadiku, Fundamentos de circuitos el\u00e9ctricos. McGraw Hill Mexico, (2013)."},{"issue":"16","key":"3108_CR4","doi-asserted-by":"publisher","first-page":"163001","DOI":"10.1088\/1361-6463\/aaaf9d","volume":"51","author":"H Amano","year":"2018","unstructured":"H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P.R. Chalker et al., The 2018 GaN power electronics roadmap. J. Phys. D Appl. Phys. 51(16), 163001\u2013163048 (2018). https:\/\/doi.org\/10.1088\/1361-6463\/aaaf9d","journal-title":"J. Phys. D Appl. Phys."},{"issue":"1","key":"3108_CR5","doi-asserted-by":"publisher","first-page":"42","DOI":"10.1109\/MPEL.2014.2382195","volume":"2","author":"A Bindra","year":"2015","unstructured":"A. Bindra, Wide-bandgap-based power devices: reshaping the power electronics landscape. IEEE Power Electron. Mag. 2(1), 42\u201347 (2015). https:\/\/doi.org\/10.1109\/MPEL.2014.2382195","journal-title":"IEEE Power Electron. Mag."},{"key":"3108_CR6","doi-asserted-by":"publisher","unstructured":"A.A. Breed, K.P. Roenker, A small-signal, RF simulation study of multiple-gate and silicon-on insulator MOSFET devices. in Proc. Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. 294\u2013297 (2004). https:\/\/doi.org\/10.1109\/SMIC.2004.1398227","DOI":"10.1109\/SMIC.2004.1398227"},{"issue":"12","key":"3108_CR7","doi-asserted-by":"publisher","first-page":"7021","DOI":"10.1021\/acs.cgd.2c00683","volume":"22","author":"RD Carrascon","year":"2022","unstructured":"R.D. Carrascon, S. Richter, M. Nawaz, P.P. Paskov, V. Darakchieva, Hot-wall MOCVD for high-quality homoepitaxy of GaN: understanding nucleation and design of growth strategies. Crystal Growth Des. 22(12), 7021\u20137030 (2022). https:\/\/doi.org\/10.1021\/acs.cgd.2c00683","journal-title":"Crystal Growth Des."},{"issue":"4","key":"3108_CR8","doi-asserted-by":"publisher","first-page":"1240023","DOI":"10.1142\/S0219581X12400236","volume":"11","author":"A Chakroun","year":"2012","unstructured":"A. Chakroun, A. Jaouad, A. Giguere, V. Aimez, R. Ares, Effective GaN surface passivation by plasma enhanced chemical vapor deposition of silicon oxide. Int. J. Nanosci. 11(4), 1240023\u20131240029 (2012). https:\/\/doi.org\/10.1142\/S0219581X12400236","journal-title":"Int. J. Nanosci."},{"key":"3108_CR9","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1109\/22.275248","volume":"42","author":"DA Frickey","year":"1994","unstructured":"D.A. Frickey, Conversions between S, Z, Y, H, ABCD, and T parameters which are valid for complex source and load impedances. IEEE Trans. Microw. Theory Tech. 42, 205\u2013211 (1994). https:\/\/doi.org\/10.1109\/22.275248","journal-title":"IEEE Trans. Microw. Theory Tech."},{"issue":"2","key":"3108_CR10","doi-asserted-by":"publisher","first-page":"250","DOI":"10.1063\/1.126940","volume":"77","author":"JP Ibbetson","year":"2000","unstructured":"J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. Denbaars, J.S. Speck, U.K. Mishra, Polarization effects, surface states, and the source of electrons in AlGaN\/GaN heterostructure field effect transistors. Appl. Phys. Lett. 77(2), 250\u2013252 (2000). https:\/\/doi.org\/10.1063\/1.126940","journal-title":"Appl. Phys. Lett."},{"key":"3108_CR11","doi-asserted-by":"publisher","first-page":"381","DOI":"10.1109\/LED.2013.2240372","volume":"34","author":"KS Im","year":"2013","unstructured":"K.S. Im, Y.W. Jo, J.H. Lee, S. Cristoloveanu, J.H. Lee, Heterojunction-free GaN Nanochannel FinFETs with high performance. IEEE Electron Device Lett. 34, 381\u2013383 (2013). https:\/\/doi.org\/10.1109\/LED.2013.2240372","journal-title":"IEEE Electron Device Lett."},{"key":"3108_CR12","doi-asserted-by":"publisher","first-page":"205","DOI":"10.1109\/TNANO.2006.869946","volume":"5","author":"KM In","year":"2006","unstructured":"K.M. In, S. Hyungcheol, Non-quasi-static small-signal modeling and analytical parameter extraction of SOI FinFETs. IEEE Trans. Nanotechnol. 5, 205\u2013210 (2006). https:\/\/doi.org\/10.1109\/TNANO.2006.869946","journal-title":"IEEE Trans. Nanotechnol."},{"issue":"10","key":"3108_CR13","doi-asserted-by":"publisher","first-page":"1008","DOI":"10.1109\/LED.2015.2466096","volume":"36","author":"YW Jo","year":"2015","unstructured":"Y.W. Jo, D.H. Son, C.H. Won, K.S. Im, J.H. Seo, I.M. Kang et al., AlGaN\/GaN FinFET with extremely broad transconductance by side-wall wet etch. IEEE Electron Device Lett. 36(10), 1008\u20131010 (2015). https:\/\/doi.org\/10.1109\/LED.2015.2466096","journal-title":"IEEE Electron Device Lett."},{"issue":"10","key":"3108_CR14","doi-asserted-by":"publisher","first-page":"100210","DOI":"10.7567\/JJAP.53.100210","volume":"53","author":"T Kachi","year":"2014","unstructured":"T. Kachi, Recent progress of GaN power devices for automotive applications. Jpn. J. Appl. Phys. 53(10), 100210\u2013100220 (2014). https:\/\/doi.org\/10.7567\/JJAP.53.100210","journal-title":"Jpn. J. Appl. Phys."},{"key":"3108_CR15","doi-asserted-by":"publisher","first-page":"1418","DOI":"10.3390\/mi13091418","volume":"13","author":"A Kumar","year":"2022","unstructured":"A. Kumar, N. Gupta, A.K. Goyal, Y. Massoud, Comprehensive power gain assessment of GaN-SOI-FinFET for improved RF\/wireless performance using TCAD. Micromachines 13, 1418 (2022). https:\/\/doi.org\/10.3390\/mi13091418","journal-title":"Micromachines"},{"key":"3108_CR16","doi-asserted-by":"publisher","first-page":"153052","DOI":"10.1016\/j.aeue.2019.153052","volume":"115","author":"A Kumar","year":"2019","unstructured":"A. Kumar, N. Gupta, S.K. Tripathi, M. Tripathi, R. Chaujar, Performance evaluation of linearity and intermodulation distortion of nanoscale GaN-SOI FinFET for RFIC design. AEU-Int. J. Electron. Commun. 115, 153052 (2019). https:\/\/doi.org\/10.1016\/j.aeue.2019.153052","journal-title":"AEU-Int. J. Electron. Commun."},{"key":"3108_CR17","doi-asserted-by":"publisher","first-page":"860","DOI":"10.1109\/TED.2018.2793853","volume":"65","author":"A Kumar","year":"2018","unstructured":"A. Kumar, M.M. Tripathi, R. Chaujar, Reliability issues of In2O5Sn gate electrode recessed channel MOSFET: impact of interface trap charges and temperature. IEEE Trans Electron Dev. 65, 860\u2013866 (2018). https:\/\/doi.org\/10.1109\/TED.2018.2793853","journal-title":"IEEE Trans Electron Dev."},{"key":"3108_CR18","doi-asserted-by":"publisher","first-page":"4040","DOI":"10.1063\/1.1660872","volume":"43","author":"R Van Overstraeten","year":"1972","unstructured":"R. Van Overstraeten, W. Nuyts, Comparison of theoretical and experimental values of the capacitance of diffused junctions. J. Appl. Phys. 43, 4040\u20134050 (1972). https:\/\/doi.org\/10.1063\/1.1660872","journal-title":"J. Appl. Phys."},{"key":"3108_CR19","unstructured":"D.M. Pozar, Microwave engineering. John Wiley & Sons (2009)."},{"key":"3108_CR20","doi-asserted-by":"publisher","unstructured":"V.S. Rajawat, B. Choudhary A. kumar, High-k SOI GaN FinFET for high power and high frequency applications. in IEEE International Conference of Electron Devices Society Kolkata Chapter (EDKCON), Kolkata, India. 386\u2013390 (2022). https:\/\/doi.org\/10.1109\/EDKCON56221.2022.10032945","DOI":"10.1109\/EDKCON56221.2022.10032945"},{"key":"3108_CR21","unstructured":"I. Silvaco Atlas User\u2019s Manual. Santa Clara, CA, Ver. 5, (2011)."},{"key":"3108_CR22","doi-asserted-by":"publisher","first-page":"181","DOI":"10.1078\/1434-8411-54100159","volume":"57","author":"FX Sinnesbichler","year":"2003","unstructured":"F.X. Sinnesbichler, G.R. Olbrich, Thermal time constant extraction for HBTs from S-parameter measurements. AEU-Int. J. Electron. Commun. 57, 181\u2013184 (2003). https:\/\/doi.org\/10.1078\/1434-8411-54100159","journal-title":"AEU-Int. J. Electron. Commun."},{"key":"3108_CR23","doi-asserted-by":"publisher","first-page":"567","DOI":"10.1016\/j.aeue.2005.11.004","volume":"60","author":"H Taher","year":"2006","unstructured":"H. Taher, D. Schreurs, B. Nauwelaers, Extraction of small-signal equivalent circuit model parameters for Si\/SiGe HBT using S-parameters measurements and one geometrical information. AEU-Int. J. Electron. Commun. 60, 567\u2013572 (2006). https:\/\/doi.org\/10.1016\/j.aeue.2005.11.004","journal-title":"AEU-Int. J. Electron. Commun."},{"key":"3108_CR24","doi-asserted-by":"publisher","unstructured":"N.K. Tak and J.H. Lee, RF small signal modeling of tri-gate \/spl Omega\/ MOSFETs implemented on bulk Si wafers. in Proc. Topical Meeting Silicon Monolithic Integr. Circuits RF Syst. 266\u2013269 (2004). https:\/\/doi.org\/10.1109\/SMIC.2004.1398220.","DOI":"10.1109\/SMIC.2004.1398220"},{"key":"3108_CR25","doi-asserted-by":"publisher","DOI":"10.1063\/5.0061555","author":"KH Teo","year":"2021","unstructured":"K.H. Teo, Y. Zhang, N. Chowdhury, S. Rakheja, R. Ma, Q. Xie, E. Yagyu, K. Yamanaka, K. Li, T. Palacios, Emerging GaN technologies for power, RF, digital, and quantum computing applications: recent advances and prospects. J. Appl. Phys. (2021). https:\/\/doi.org\/10.1063\/5.0061555","journal-title":"J. Appl. Phys."},{"key":"3108_CR26","doi-asserted-by":"publisher","first-page":"518","DOI":"10.1109\/TNANO.2023.3309411","volume":"22","author":"S Tiwari","year":"2023","unstructured":"S. Tiwari, R. Saha, Sensitivity analysis of I-shape TFET biosensor considering repulsive steric and trap effects. IEEE Trans. Nanotechnol. 22, 518\u2013524 (2023). https:\/\/doi.org\/10.1109\/TNANO.2023.3309411","journal-title":"IEEE Trans. Nanotechnol."},{"key":"3108_CR27","unstructured":"Y. Tsividis, C. McAndrew, Operation and modeling of the MOS transistor. Oxford Univ Press, (2011)."}],"container-title":["Circuits, Systems, and Signal Processing"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s00034-025-03108-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s00034-025-03108-7\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s00034-025-03108-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,7,11]],"date-time":"2025-07-11T07:41:26Z","timestamp":1752219686000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s00034-025-03108-7"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,4,11]]},"references-count":27,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2025,8]]}},"alternative-id":["3108"],"URL":"https:\/\/doi.org\/10.1007\/s00034-025-03108-7","relation":{},"ISSN":["0278-081X","1531-5878"],"issn-type":[{"value":"0278-081X","type":"print"},{"value":"1531-5878","type":"electronic"}],"subject":[],"published":{"date-parts":[[2025,4,11]]},"assertion":[{"value":"26 June 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"17 March 2025","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 March 2025","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"11 April 2025","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"The authors declare that they have no conflicts of interest.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Conflict of interests"}},{"value":"Not Applicable.","order":3,"name":"Ethics","group":{"name":"EthicsHeading","label":"Ethical Approval"}},{"value":"Not Applicable.","order":4,"name":"Ethics","group":{"name":"EthicsHeading","label":"Consent to Participate"}},{"value":"Not Applicable.","order":5,"name":"Ethics","group":{"name":"EthicsHeading","label":"Consent for Publication"}}]}}