{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,2]],"date-time":"2026-04-02T10:05:12Z","timestamp":1775124312755,"version":"3.50.1"},"reference-count":10,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2020,12,18]],"date-time":"2020-12-18T00:00:00Z","timestamp":1608249600000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/deed.de"},{"start":{"date-parts":[[2020,12,18]],"date-time":"2020-12-18T00:00:00Z","timestamp":1608249600000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/creativecommons.org\/licenses\/by\/4.0\/deed.de"}],"funder":[{"DOI":"10.13039\/100008332","name":"Graz University of Technology","doi-asserted-by":"crossref","id":[{"id":"10.13039\/100008332","id-type":"DOI","asserted-by":"crossref"}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Elektrotech. Inftech."],"published-print":{"date-parts":[[2021,2]]},"abstract":"<jats:title>Abstract<\/jats:title><jats:p>This paper describes a new way to create a behavioral model for power MOSFETs with highly nonlinear parasitic capacitances like those based on superjunction (SJ) principles. The process ranges from a simple measurement to the final model for SPICE simulations. One of the benefits of the proposed modeling technique is that it does not require any information about the voltage-dependent capacitances of the MOSFET from the data sheet but instead relies on a simple measurement method using a vector network analyzer. The measurement data can be used for modeling all parasitic capacitances and inductances in the SPICE model. Compared to existing simulation models by the manufacturer, the proposed model promises better convergence, more accurate high-frequency behavior and faster simulation time. The advantages and disadvantages of this modeling technique are discussed.<\/jats:p>","DOI":"10.1007\/s00502-020-00860-3","type":"journal-article","created":{"date-parts":[[2020,12,18]],"date-time":"2020-12-18T15:02:42Z","timestamp":1608303762000},"page":"48-52","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Fast and simple model generation for superjunction power MOSFETs","Schnelle und einfache Modellgenerierung f\u00fcr Superjunction Leistungs-MOSFETs Ein einfacher Weg zu genauen SPICE-Modellen auch ohne genaue Informationen aus dem Datenblatt"],"prefix":"10.1007","volume":"138","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-7657-2406","authenticated-orcid":false,"given":"Michael","family":"Fuchs","sequence":"first","affiliation":[]},{"given":"Lukas","family":"Spielberger","sequence":"additional","affiliation":[]},{"given":"Ko","family":"Odreitz","sequence":"additional","affiliation":[]},{"given":"Bernd","family":"Deutschmann","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2020,12,18]]},"reference":[{"issue":"8","key":"860_CR1","doi-asserted-by":"publisher","first-page":"2133","DOI":"10.1109\/TPEL.2010.2046424","volume":"25","author":"F. 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(2018): Improved SiC power MOSFET model considering nonlinear junction capacitances. IEEE Trans. Power Electron., 33(3), 2509\u20132517.","journal-title":"IEEE Trans. Power Electron."},{"key":"860_CR4","first-page":"4","volume-title":"IEEE international symposium on electromagnetic compatibility","author":"P. Hillenbrand","year":"2017","unstructured":"Hillenbrand, P., Beltle, M., Tenbohlen, S. (2017): Sensitivity analysis of behavioral MOSFET models in transient EMC simulation. In IEEE international symposium on electromagnetic compatibility (pp. 4\u20139)."},{"issue":"4","key":"860_CR5","doi-asserted-by":"publisher","first-page":"3096","DOI":"10.1109\/TPEL.2015.2445375","volume":"31","author":"M. Turzynski","year":"2016","unstructured":"Turzynski, M., Kulesza, W. J. (2016): A simplified behavioral MOSFET model based on parameters extraction for circuit simulations. IEEE Trans. Power Electron., 31(4), 3096\u20133105.","journal-title":"IEEE Trans. Power Electron."},{"key":"860_CR6","doi-asserted-by":"publisher","first-page":"1387","DOI":"10.1109\/ECCE.2017.8095952","volume-title":"2017 IEEE energy conversion congress and exposition (ECCE)","author":"D. Cittanti","year":"2017","unstructured":"Cittanti, D., et al. (2017): Role of parasitic capacitances in power MOSFET turn-on switching speed limits: a SiC case study. In 2017 IEEE energy conversion congress and exposition (ECCE) (pp. 1387\u20131394). https:\/\/doi.org\/10.1109\/ECCE.2017.8095952."},{"issue":"11","key":"860_CR7","doi-asserted-by":"publisher","first-page":"9819","DOI":"10.1109\/TPEL.2017.2789240","volume":"33","author":"T. Liu","year":"2018","unstructured":"Liu, T., Wong, T. T. Y., Shen, Z. J. (2018): A new characterization technique for extracting parasitic inductances of SiC power MOSFETs in discrete and module packages based on two-port S-parameters measurement. IEEE Trans. Power Electron., 33(11), 9819\u20139833.","journal-title":"IEEE Trans. Power Electron."},{"key":"860_CR8","first-page":"1","volume-title":"2019 21st European conference on power electronics and applications (EPE \u201919 ECCE Europe)","author":"M. Fuchs","year":"2019","unstructured":"Fuchs, M., Spielberger, L., Deutschmann, B. (2019): A new method for measuring parasitics of super junction power MOSFETs. In 2019 21st European conference on power electronics and applications (EPE \u201919 ECCE Europe) (pp. 1\u2013P.9)."},{"key":"860_CR9","unstructured":"Introduction to Infineon\u2019s simulation models power MOSFETs. AN 2014-02. V 2.0. Infineon technologies. Feb. 2014."},{"key":"860_CR10","unstructured":"Engelhardt, M. (2015): SPICE differentiation. Analog devices. http:\/\/cds.linear.com\/docs\/enllt-journal\/LTJournal-V24n4-01-df-SPICEDifferentiation-MikeEngelhardt.pdf. Accessed 10 October 2020."}],"container-title":["e &amp; i Elektrotechnik und Informationstechnik"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00502-020-00860-3.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s00502-020-00860-3\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00502-020-00860-3.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,2,23]],"date-time":"2021-02-23T11:17:58Z","timestamp":1614079078000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s00502-020-00860-3"}},"subtitle":["An easy way to get accurate SPICE models even without precise information from the data sheet"],"short-title":[],"issued":{"date-parts":[[2020,12,18]]},"references-count":10,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2021,2]]}},"alternative-id":["860"],"URL":"https:\/\/doi.org\/10.1007\/s00502-020-00860-3","relation":{},"ISSN":["0932-383X","1613-7620"],"issn-type":[{"value":"0932-383X","type":"print"},{"value":"1613-7620","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,12,18]]},"assertion":[{"value":"23 October 2020","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 December 2020","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 December 2020","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}]}}