{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T21:14:21Z","timestamp":1649020461668},"reference-count":13,"publisher":"Springer Science and Business Media LLC","issue":"1","license":[{"start":{"date-parts":[[2021,1,27]],"date-time":"2021-01-27T00:00:00Z","timestamp":1611705600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2021,1,27]],"date-time":"2021-01-27T00:00:00Z","timestamp":1611705600000},"content-version":"vor","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Elektrotech. Inftech."],"published-print":{"date-parts":[[2021,2]]},"DOI":"10.1007\/s00502-021-00862-9","type":"journal-article","created":{"date-parts":[[2021,1,27]],"date-time":"2021-01-27T09:03:02Z","timestamp":1611738182000},"page":"1-2","update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Leistungselektronik\/Leistungshalbleiter \u2013 Anwendungen von Milliwatt bis Megawatt, vom Mikrochip bis zum System"],"prefix":"10.1007","volume":"138","author":[{"given":"Bernd","family":"Deutschmann","sequence":"first","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2021,1,27]]},"reference":[{"key":"862_CR1","unstructured":"Greenleaf Whittier Pickard (1906): Means for receiving intelligence communicated by electric waves. United States Patent US836,531, November 20."},{"key":"862_CR2","unstructured":"Bardeen, J., Brattain, W. H. (1948): Semiconductor amplifier and electrode structure therefor. United States Patent US2,589,658, Original Application June 17, Serial No. 33,466."},{"key":"862_CR3","unstructured":"Bardeen, J., Brattain, W. H. (1950): Three-electrode circuit element utilizing semiconductor materials. United States Patent US2,524,035, Application June 17, 1948, Serial No. 33,466, patented Oct. 3."},{"issue":"1","key":"862_CR4","first-page":"3","volume":"14","author":"G. L. Arsov","year":"2010","unstructured":"Arsov, G. L., Mircevski, S. (2010): The sixth decade of the thyristor. J. Electron., 14(1), 3. ISSN 1450-5843.","journal-title":"J. Electron."},{"key":"862_CR5","unstructured":"Yamagami, K., Akagiri Transistor, Y. Japanese Patent No. S47-21739, File No. S43-87175."},{"issue":"2","key":"862_CR6","doi-asserted-by":"publisher","first-page":"12","DOI":"10.1109\/MPEL.2015.2421751","volume":"2","author":"K. Shenai","year":"2015","unstructured":"Shenai, K. (2015): The invention and demonstration of the IGBT [a look back]. IEEE Power Energy Mag., 2(2), 12\u201316. https:\/\/doi.org\/10.1109\/MPEL.2015.2421751.","journal-title":"IEEE Power Energy Mag."},{"key":"862_CR7","unstructured":"Baliga, B. J. (1977): MOS gate structure for thyristors. GE Patent Disclosure Letter RD-10 243, July 26"},{"key":"862_CR8","doi-asserted-by":"publisher","first-page":"645","DOI":"10.1049\/el:19790459","volume":"15","author":"B. J. Baliga","year":"1979","unstructured":"Baliga, B. J. (1979): Enhancement and depletion mode vertical channel MOS gated thyristors. Electron. Lett., 15, 645\u2013647.","journal-title":"Electron. Lett."},{"key":"862_CR9","unstructured":"Tihanyi, J. (1995): Power MOSFET. United States Patent US5,438,215, Aug. 1."},{"key":"862_CR10","unstructured":"Coe, D. J. (1988): High voltage semiconductor devices. United States Patent US4,754,310, Jun. 28."},{"key":"862_CR11","first-page":"683","volume-title":"IEDM tech. dig.","author":"G. Deboy","year":"1998","unstructured":"Deboy, G., M\u00e4rz, M., Stengl, J.-P., Strack, H., Tihanyi, J., Weber, H. (1998): A new generation of high voltage MOSFETs breaks the limit line of silicon. In IEDM tech. dig. (S. 683\u2013685)."},{"key":"862_CR12","first-page":"3","volume-title":"Proc. 11th int. symp. power semiconductor device ICs","author":"L. Lorenz","year":"1999","unstructured":"Lorenz, L., Deboy, G., Knapp, A., Marz, M. (1999): COOLMOS\u2014a new milestone in high voltage power MOS. In Proc. 11th int. symp. power semiconductor device ICs (S.\u00a03\u201310)."},{"key":"862_CR13","first-page":"65","volume-title":"Proc. 12th int. symp. power semiconductor device ICs","author":"M. Saggio","year":"2000","unstructured":"Saggio, M., Fagone, D., Musumeci, S. (2000): MDmesh: innovative technology for high voltage power MOSFETs. In Proc. 12th int. symp. power semiconductor device ICs (S.\u00a065\u201368)."}],"container-title":["e & i Elektrotechnik und Informationstechnik"],"original-title":[],"language":"de","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00502-021-00862-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s00502-021-00862-9\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s00502-021-00862-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,2,23]],"date-time":"2021-02-23T11:16:28Z","timestamp":1614078988000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s00502-021-00862-9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,1,27]]},"references-count":13,"journal-issue":{"issue":"1","published-print":{"date-parts":[[2021,2]]}},"alternative-id":["862"],"URL":"https:\/\/doi.org\/10.1007\/s00502-021-00862-9","relation":{},"ISSN":["0932-383X","1613-7620"],"issn-type":[{"value":"0932-383X","type":"print"},{"value":"1613-7620","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,1,27]]},"assertion":[{"value":"19 January 2021","order":1,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 January 2021","order":2,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"This content has been made available to all.","name":"free","label":"Free to read"}]}}