{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,2]],"date-time":"2022-04-02T15:35:56Z","timestamp":1648913756785},"reference-count":21,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2007,5,9]],"date-time":"2007-05-09T00:00:00Z","timestamp":1178668800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J Electron Test"],"published-print":{"date-parts":[[2007,8]]},"DOI":"10.1007\/s10836-006-0629-6","type":"journal-article","created":{"date-parts":[[2007,5,3]],"date-time":"2007-05-03T17:12:17Z","timestamp":1178212337000},"page":"363-368","source":"Crossref","is-referenced-by-count":5,"title":["Techniques for Disturb Fault Collapsing"],"prefix":"10.1007","volume":"23","author":[{"given":"Mohammad Gh.","family":"Mohammad","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Laila","family":"Terkawi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2007,5,9]]},"reference":[{"issue":"3","key":"10629_CR1","doi-asserted-by":"crossref","first-page":"293","DOI":"10.1109\/TC.2003.1183945","volume":"52","author":"Z. Al-Ars","year":"2003","unstructured":"Z. Al-Ars and A. van de Goor, \u201cStatic and Dynamic Behavior of Memory Cell Array Spot Defects in Embedded DRAMs,\u201d IEEE Trans. Comput., vol. 52, no. 3, pp. 293\u2013309, March 2003.","journal-title":"IEEE Trans. Comput."},{"key":"10629_CR2","doi-asserted-by":"crossref","unstructured":"A. Brand, K. Wu, S. Pan, and D. Chin, \u201cNovel Read Disturb Mechanism Induced by Flash Cycling,\u201d Proc. Int. Reliab. Phys. Symp., 1993, pp. 127\u2013132.","DOI":"10.1109\/RELPHY.1993.283291"},{"key":"10629_CR3","volume-title":"Nonvolatile Semiconductor Memory Technology: A comprehensive Guide to Understanding and Using NVSM Devices","author":"W. Brown","year":"1998","unstructured":"W. Brown and J. Brewer, Nonvolatile Semiconductor Memory Technology: A comprehensive Guide to Understanding and Using NVSM Devices New York: IEEE, 1998."},{"key":"10629_CR4","volume-title":"Essentials of Electronic Testing for Digital, Memory and Mixed-signal VLSI Circuits","author":"M.L. Bushnell","year":"2000","unstructured":"M.L. Bushnell and V.D. Agrawal, Essentials of Electronic Testing for Digital, Memory and Mixed-signal VLSI Circuits, Norwell, MA: Kluwer, 2000."},{"key":"10629_CR5","unstructured":"K.-L. Cheng, J.-C. Yeh, C.-W. Wang, C.-T. Huang, and C.-W. Wu, \u201cRAMSES-FT:A Fault simulator for Flash Memory Testing and Diagnostics,\u201d Proc. VLSI Test Symp., 2002, pp. 281\u2013286."},{"key":"10629_CR6","doi-asserted-by":"crossref","unstructured":"S.-K. Chiu, J.-C. Yeh, C.-T. Huang, and C.-W. Wu, \u201cDiagonal Test and Diagnostic Schemes for Flash Memories,\u201d Proc. Int. Test Conf., 2002, pp. 37\u201346.","DOI":"10.1109\/TEST.2002.1041743"},{"issue":"3","key":"10629_CR7","doi-asserted-by":"crossref","first-page":"691","DOI":"10.1109\/T-ED.1985.22000","volume":"32","author":"K.R. Hoffman","year":"1985","unstructured":"K.R. Hoffman, C. Werner, W. Weber, and G. Dorda, \u201cHot-Electron and Hole Emission effects in Short n-Channel MOSFET\u2019s,\u201d IEEE Trans. Electron Devices, vol. 32, no. 3, pp. 691\u2013699, March 1985.","journal-title":"IEEE Trans. Electron Devices"},{"key":"10629_CR8","unstructured":"IEEE 1005 Standard Definitions and Characterization of Floating Gate Semiconductor Arrays, 2nd ed., Piscataway: IEEE Standard Department, 1999."},{"issue":"1","key":"10629_CR9","doi-asserted-by":"crossref","first-page":"278","DOI":"10.1063\/1.1657043","volume":"40","author":"M. Lenzlinger","year":"1969","unstructured":"M. Lenzlinger and E.H. Snow, \u201cFowler\u2013Nordheim Tunneling in Thermally Grown SiO2,\u201d J. Appl. Physi., vol. 40, no. 1, pp. 278\u2013284, 1969.","journal-title":"J. Appl. Physi."},{"key":"10629_CR10","unstructured":"M.G. Mohammad and K.K. Saluja, \u201cSimulating Program Disturb Faults in Flash Memories Using SPICE Compatible Electrical Model,\u201d IEEE Trans. Electron Devices, pp. 2286\u20132291, November 2003."},{"key":"10629_CR11","doi-asserted-by":"crossref","unstructured":"M.G. Mohammad and L. Al-Terkawi, \u201cFault Collapsing for Flash Memory Disturb Faults,\u201d Proc. 10th Eur. Test Symp., May 2005, pp. 142\u2013147.","DOI":"10.1109\/ETS.2005.24"},{"issue":"6","key":"10629_CR12","doi-asserted-by":"crossref","first-page":"905","DOI":"10.1109\/TCAD.2005.847941","volume":"24","author":"M.G. Mohammad","year":"2005","unstructured":"M.G. Mohammad and K.K. Saluja, \u201cOptimizing Program Disturb Faults Test Using Defect-Based Testing,\u201d IEEE Trans. CAD Integr. Circuits Syst., vol. 24, no. 6, pp. 905\u2013915, June 2005.","journal-title":"IEEE Trans. CAD of Integr. Circuits Syst."},{"issue":"6","key":"10629_CR13","doi-asserted-by":"crossref","first-page":"495","DOI":"10.1023\/A:1012868605214","volume":"17","author":"M.G. Mohammad","year":"2001","unstructured":"M.G. Mohammad, K.K. Saluja, and A. Yap, \u201cFault Models and Test Procedures for Flash Memory Disturbances,\u201d J. Electron. Test: Theory Appl., vol. 17, no. 6, pp. 495\u2013508, December 2001.","journal-title":"J. Electron. Test: Theory Appl."},{"issue":"8","key":"10629_CR14","doi-asserted-by":"crossref","first-page":"1248","DOI":"10.1109\/5.622505","volume":"85","author":"P. Pavan","year":"1997","unstructured":"P. Pavan, R. Bez, P. Olivo, and E. Zanoni, \u201cFlash Memory Cells\u2014An Overview,\u201d Proc. IEEE, vol. 85, no. 8, pp. 1248\u20131271, August 1997.","journal-title":"Proc. IEEE"},{"issue":"12","key":"10629_CR15","doi-asserted-by":"crossref","first-page":"2399","DOI":"10.1109\/5.735448","volume":"86","author":"B. Ricc\u00f2","year":"1998","unstructured":"B. Ricc\u00f2, M. Lanzoni, A. Manstretta, H.E. Maes, D. Montanari, and A. Modelli, \u201cNonvolatile Multilevel Memories for Digital Applications,\u201d Proc. IEEE, vol. 86, no. 12, pp. 2399\u20132421, December 1998.","journal-title":"Proc. IEEE"},{"key":"10629_CR16","doi-asserted-by":"crossref","first-page":"97","DOI":"10.1109\/ICMTS.1995.513953","volume":"8","author":"S. Satoh","year":"1995","unstructured":"S. Satoh, G. Hemink, K. Hatakeyama, and S. Aritome, \u201cStress Induced Leakage Current of Tunnel Oxide Derived from Flash Memory Read\u2013Disturb Characteristics,\u201d Proc. Int. Conf. Microelectron. Test Struct., vol. 8, March 1995, pp. 97\u201399.","journal-title":"Proc. Int. Conf. Microelectron. Test Struct."},{"issue":"4","key":"10629_CR17","doi-asserted-by":"crossref","first-page":"569","DOI":"10.1109\/JPROC.2003.811707","volume":"91","author":"A. Silvagni","year":"2003","unstructured":"A. Silvagni, G. Fusillo, R. Ravasio, M. Picca, and S. Zanardi, \u201cAn Overview of Logic Architectures Inside Flash Memory Devices,\u201d Proc. IEEE, vol. 91, no. 4, pp. 569\u2013580, April 2003.","journal-title":"Proc. IEEE"},{"key":"10629_CR18","volume-title":"Testing Semiconductor Memories: Theory and Practice","author":"J. Goor van de","year":"1998","unstructured":"J. van de Goor, Testing Semiconductor Memories: Theory and Practice, Gouda, The Netherlands: ComTex, 1998."},{"key":"10629_CR19","doi-asserted-by":"crossref","unstructured":"A. van de Goor and Z. Al-Ars, \u201cFunctional Memory Faults: A Formal Notation and a Taxonomy,\u201d Proc. 18th IEEE VLSI Test Symp., 2000, pp. 281\u2013289.","DOI":"10.1109\/VTEST.2000.843856"},{"key":"10629_CR20","doi-asserted-by":"crossref","unstructured":"G. Verma and N. Meilke, \u201cReliability Performance of the ETOX Based Flash Memories,\u201d Proc. Int. Reliab. Phys. Symp., 1988, pp. 158\u2013166.","DOI":"10.1109\/IRPS.1988.362216"},{"key":"10629_CR21","unstructured":"J.-C. Yeh, C.-F. Wu, K.-L. Cheng, , Y.-F. Chou, C.-T. Huang, and C.-W. Wu, \u201cFlash Memory Built-in-self-test Using March-like Algorithms,\u201d Proc. 1st Int. Workshop Electron. Des., Test, Appl. (DELTA\u201902), 2002, pp. 137\u2013141."}],"container-title":["Journal of Electronic Testing"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-006-0629-6.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s10836-006-0629-6\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-006-0629-6","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,5,31]],"date-time":"2019-05-31T01:57:40Z","timestamp":1559267860000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s10836-006-0629-6"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2007,5,9]]},"references-count":21,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2007,8]]}},"alternative-id":["10629"],"URL":"https:\/\/doi.org\/10.1007\/s10836-006-0629-6","relation":{},"ISSN":["0923-8174","1573-0727"],"issn-type":[{"value":"0923-8174","type":"print"},{"value":"1573-0727","type":"electronic"}],"subject":[],"published":{"date-parts":[[2007,5,9]]}}}