{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,9,7]],"date-time":"2024-09-07T19:41:42Z","timestamp":1725738102973},"reference-count":46,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2015,6,1]],"date-time":"2015-06-01T00:00:00Z","timestamp":1433116800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["J Electron Test"],"published-print":{"date-parts":[[2015,6]]},"DOI":"10.1007\/s10836-015-5529-1","type":"journal-article","created":{"date-parts":[[2015,6,25]],"date-time":"2015-06-25T07:46:45Z","timestamp":1435218405000},"page":"275-289","update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Circuit-Level Simulation of the Single Event Transients in an On-Chip Single Event Latchup Protection Switch"],"prefix":"10.1007","volume":"31","author":[{"given":"Marko S.","family":"Andjelkovi\u0107","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Vladimir","family":"Petrovi\u0107","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zoran","family":"Stamenkovi\u0107","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Goran S.","family":"Risti\u0107","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Goran S.","family":"Jovanovi\u0107","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2015,6,26]]},"reference":[{"key":"5529_CR1","doi-asserted-by":"crossref","unstructured":"Abadir GB (2005) A device simulation and model verification of single event transients in n + -p junctions. IEEE Trans Nucl Sci 52(5):1518\u20131523","DOI":"10.1109\/TNS.2005.856718"},{"key":"5529_CR2","unstructured":"Alles M (2007) Process technology and hardening. IEEE NSREC Short Course"},{"key":"5529_CR3","doi-asserted-by":"crossref","first-page":"305","DOI":"10.1109\/TDMR.2005.853449","volume":"5","author":"RC Bauman","year":"2005","unstructured":"Bauman RC (2005) Radiation-induced soft errors in advanced semiconductor technologies. IEEE Trans Dev Mater Reliab 5:305\u2013316","journal-title":"IEEE Trans Dev Mater Reliab"},{"key":"5529_CR4","doi-asserted-by":"crossref","unstructured":"Bruguier G, Palau JM (1996) Single particle-induced latchup. IEEE Trans Nucl Sci 43(2):522\u2013532","DOI":"10.1109\/23.490898"},{"key":"5529_CR5","doi-asserted-by":"crossref","unstructured":"Cazeaux JM, Rossi D, Omana M, Metra C, Chatterjee A (2005) On transistor level gate sizing for increased robustness to transient faults. Proceedings of the 11th IEEE International On-Line Testing Symposium (IOLTS\u201905), pp. 23\u201328","DOI":"10.1109\/IOLTS.2005.49"},{"key":"5529_CR6","unstructured":"Choudhury MR, Zhou Q, Mohanram K (2006) Design optimization for single event upset robustness using simultaneous dual-Vdd and sizing techniques. Proc. IEEE\/ACM International Conference on\u00a0Computer-Aided Design, San Jose, USA, pp. 204\u2013209"},{"key":"5529_CR7","doi-asserted-by":"crossref","unstructured":"Cohen N, Sriram TS, Leland N, Moyer D, Butler S, Flatley R (1999) Soft error considerations for deep submicron CMOS circuit applications. International electron devices meeting, IEDM Technical Digest, Washington, USA","DOI":"10.1109\/IEDM.1999.824159"},{"key":"5529_CR8","unstructured":"Dharchoudhury A, Kang SM, Cha H, Patel JH (1994) Fast timing simulation of transient faults in digital circuits. Proc. IEEE\/ACM International Conference on\u00a0Computer-Aided Design, pp. 719\u2013726"},{"issue":"3","key":"5529_CR9","doi-asserted-by":"crossref","first-page":"583","DOI":"10.1109\/TNS.2003.813129","volume":"50","author":"P Dodd","year":"2003","unstructured":"Dodd P, Massengill L (2003) Basic mechanisms and modeling of single event upset in digital microelectronics. IEEE Trans Nucl Sci 50(3):583\u2013602","journal-title":"IEEE Trans Nucl Sci"},{"key":"5529_CR10","unstructured":"Edmonds LD, Barnes CE, Scheick LZ (2000) An introduction to space radiation effects on microelectronics. JPL Publication 00\u201306, NASA"},{"key":"5529_CR11","unstructured":"ESCC (European Space Components Coordination), Total Dose Steady State Irradiation Test Method, Specifications No. 22900. Link: www.escies.org ."},{"key":"5529_CR12","doi-asserted-by":"crossref","unstructured":"Freeman L (1996) Critical charge calculations for a bipolar SRAM cell. IBM J R&D","DOI":"10.1147\/rd.401.0119"},{"key":"5529_CR13","unstructured":"Gadlage M (2010) Impact of temperature on single event transients in deep submicrometer bulk and silicon-on-insulator digital CMOS technologies. PhD Thesis, Faculty of the Graduate School of Vanderbilt University, Nashville, Tennessee, USA"},{"key":"5529_CR14","unstructured":"Gill B Nikolaidis M, Wolff F, Papachristou P, Garverich S (2005) An efficient BICS design for SEU detection and correction in semicondcutor memories. Proceedings of the Design, Automation and Test in Europe Conference and Exhibition (DATE\u201905)"},{"key":"5529_CR15","doi-asserted-by":"crossref","unstructured":"Hellebrand S, Zoellin CG, Ludwig S, Coym T (2007) A refined electrical model for particle strikes and its impact on SEU prediction. Proc. 22nd IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, Rome, Italy.","DOI":"10.1109\/DFT.2007.43"},{"key":"5529_CR16","doi-asserted-by":"crossref","unstructured":"Huang RHM, Hsu DKH, Wen CHP (2015) A determinate radiation hardened technique for safety-critical CMOS designs. J Electron Test: Theory Appl 31(2):181\u2013192","DOI":"10.1007\/s10836-015-5517-5"},{"key":"5529_CR17","doi-asserted-by":"crossref","unstructured":"Johnston AH, Hughlock BW (1990) Latchup in CMOS from single particles. IEEE Trans Nucl Sci 37(6):1886\u20131893","DOI":"10.1109\/23.101205"},{"key":"5529_CR18","doi-asserted-by":"crossref","unstructured":"Johnston AH, Swift GM, Edmonds LD (1997) Latchup in integrated circuits from energetic protons. IEEE Trans Nucl Sci 44(6):2367\u20132377","DOI":"10.1109\/23.659064"},{"key":"5529_CR19","doi-asserted-by":"crossref","unstructured":"Karnik T, Hazucha P, Patel J (2004) Characterization of soft errors caused by single event upsets in CMOS processes. IEEE Trans Dependable Secure Comput 1(2):128\u2013143","DOI":"10.1109\/TDSC.2004.14"},{"key":"5529_CR20","doi-asserted-by":"crossref","unstructured":"Kauppila JS, Sternberg AL, Alles ML, Francis AM, Holmes J, Amusan OA, Massengill LW (2009) A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit. IEEE Trans Nucl Sci 56(6):3152\u20133157","DOI":"10.1109\/TNS.2009.2033798"},{"key":"5529_CR21","unstructured":"Lacoe RC (2003) CMOS scaling, design principles and hardening-by-design methodology. IEEE NSREC Short Course"},{"key":"5529_CR22","doi-asserted-by":"crossref","unstructured":"Lala\u00a0PK (2003) A single error correcting and double error detecting and coding scheme for computer memory systems. In Proceedings of the 18th IEEE International Symposium on Defect and Fault Tolerance in VLSI Systems, Cambridge, USA","DOI":"10.1109\/DFTVS.2003.1250117"},{"key":"5529_CR23","unstructured":"Leibniz Institute for High Performance Microelectronics, IHP, Frankfurt (Oder), Germany, www.ihp-microelectronics.com"},{"issue":"9\u201311","key":"5529_CR24","doi-asserted-by":"crossref","first-page":"1827","DOI":"10.1016\/j.microrel.2007.07.101","volume":"47","author":"JL Leray","year":"2007","unstructured":"Leray JL (2007) Effects of atmospheric neutrons on devices, at Sea level and in avionics embedded systems. Microelectron Reliab 47(9\u201311):1827\u20131835","journal-title":"Microelectron Reliab"},{"key":"5529_CR25","doi-asserted-by":"crossref","unstructured":"Lima Kastensmidt F, Assis T, Ribeiro I, Wirth G, Brusamarello L, Reis R (2009) Transistor sizing and folding for radiation hardening. Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on, Bruges, Belgium","DOI":"10.1109\/RADECS.2009.5994705"},{"key":"5529_CR26","doi-asserted-by":"crossref","unstructured":"Lyons RE, Vanderkulk W (1962) The use of triple modular redundancy to improve computer reliability. IBM J Res Dev 6(2):200\u2013209","DOI":"10.1147\/rd.62.0200"},{"key":"5529_CR27","unstructured":"Massengill L (1993) SEU modeling and prediction techniques. IEEE NSREC Short Course"},{"key":"5529_CR28","doi-asserted-by":"crossref","unstructured":"Messenger GC (1982) Collection of charge on junction nodes from ion tracks. IEEE Trans Nucl Sci 29(6):2024\u20132031","DOI":"10.1109\/TNS.1982.4336490"},{"key":"5529_CR29","doi-asserted-by":"crossref","unstructured":"Narasimhan B, Bhuva BL, Schrimpf RD, Massengill LW, Gadlage MJ, Amusan OA, Holman WT, Witulski AF, Robinson WH, Black JD, Benedetto JM, Eaton PA, (2007) Characterization of digital single event transient pulse widths in 130 nm and 90 nm CMOS Technologies. IEEE Trans Nucl Sci 54(6)","DOI":"10.1109\/TNS.2007.910125"},{"key":"5529_CR30","doi-asserted-by":"crossref","unstructured":"Nashiyama I, Hirao T, Kamiya T, Yutoh H, Nishijima T, Sekiguti H, (1993) Single event current transients induced by high energy microbeams. IEEE Trans Nucl Sci 40(6):1935\u20131940","DOI":"10.1109\/23.273461"},{"key":"5529_CR31","doi-asserted-by":"crossref","unstructured":"Nicolaidis M (2006) A low-cost single-event latchup mitigation scheme. Proceedings of the 12th IEEE International On-Line Testing Symposium (IOLTS \u201806)","DOI":"10.1109\/IOLTS.2006.6"},{"issue":"6","key":"5529_CR32","doi-asserted-by":"crossref","first-page":"2742","DOI":"10.1109\/23.556861","volume":"NS-43","author":"E Normand","year":"1996","unstructured":"Normand E (1996) Single event upset at ground level. IEEE Trans Nucl Sci NS-43(6):2742\u20132750","journal-title":"IEEE Trans Nucl Sci"},{"key":"5529_CR33","doi-asserted-by":"crossref","unstructured":"Petersen E (2011) Single event effects in aerospace, Wiley-IEEE Press","DOI":"10.1002\/9781118084328"},{"key":"5529_CR34","unstructured":"Petrovic V (2013) Design methodology for highly reliable digital ASIC designs applied to network-centric system middleware switch processor. PhD thesis, Brandenburg Technical University, Cottbus, Germany"},{"key":"5529_CR35","unstructured":"Petrovic V, Schoof G, Stamenkovic Z. Characterization and verification of latchup protection switch in radiation environment. In the Proceedings of the Second International Conference on Radiation and Dosimetry in Various Fields of Research, RAD2014, Nis, Serbia. (link: www.rad2014.elfak.rs\/conference_material.php , Proceedings of RAD2014 Conference, pages 107\u2013110)."},{"key":"5529_CR36","doi-asserted-by":"crossref","unstructured":"Petrovic V, Ilic M, Schoof G, Stamenkovic Z (2013) Integrated single event latchup protection for ASICs used in space applications. 21st Telecommunications forum TELFOR 2013 Serbia, Belgrade, November 26\u201328","DOI":"10.1109\/TELFOR.2013.6716308"},{"key":"5529_CR37","doi-asserted-by":"crossref","unstructured":"Petrovic V, Schoof G, Stamenkovic Z (2014) Fault-tolerant TMR and DMR circuits with latchup protection switches. Microelectron Reliab 54:1613\u20131626","DOI":"10.1016\/j.microrel.2014.04.001"},{"key":"5529_CR38","unstructured":"Reed R (2008) Fundamental mechanisms for single particle-induced soft errors. IEEE NSREC Short Course"},{"key":"5529_CR39","doi-asserted-by":"crossref","unstructured":"Roche P, Palau JM, Bruguier G, Tavernier C, Ecoffet R, Gasiot J (1999) Determination of key parameters for SEU occurrence using 3D full cell SRAM simulations. IEEE Trans Nucl Sci 46(6):1354\u20131362","DOI":"10.1109\/23.819093"},{"key":"5529_CR40","doi-asserted-by":"crossref","unstructured":"Shuming C, Biwei L, Bin L (2008) Coupled SET modeling based on LUT in ultra-deep submicron technology. TENCON 2008 - IEEE Region 10 Conference, Hyderabad","DOI":"10.1109\/TENCON.2008.4766665"},{"key":"5529_CR41","unstructured":"Srour JR (1983) Basic mechanisms of radiation effects on electronic materials, devices and integrated circuits. IEEE NSREC Short Course"},{"key":"5529_CR42","doi-asserted-by":"crossref","unstructured":"Teifel J (2008) Self-voting dual-modular redundancy circuits for single event transient mitigation. IEEE Trans Nucl Sci 55(6):3435\u20133439","DOI":"10.1109\/TNS.2008.2005583"},{"key":"5529_CR43","doi-asserted-by":"crossref","unstructured":"Veeravalli VS, Steininger A (2013) Performance of radiation hardening techniques under voltage and temperature variations. IEEE Aerospace Conference","DOI":"10.1109\/AERO.2013.6497390"},{"key":"5529_CR44","doi-asserted-by":"crossref","unstructured":"Wirth G (2008) Bulk built-in current sensors for single event transient detection in deep submicron technologies. Microelectron Reliab 48:710\u2013715","DOI":"10.1016\/j.microrel.2008.01.002"},{"key":"5529_CR45","doi-asserted-by":"crossref","unstructured":"Zhang B, Araposthatis A, Nassif S, Orshansky M (2006) Analytical modeling of SRAM dynamic stability. Proc. ICCAD, November 5\u20139, San Jose, USA","DOI":"10.1109\/ICCAD.2006.320052"},{"key":"5529_CR46","doi-asserted-by":"crossref","unstructured":"Zhou Q, Mohanram K (2006) Gate sizing to radiation harden combinational logic. IEEE Trans Comput aided Des Integr Circ Syst 25(1):155\u2013166","DOI":"10.1109\/TCAD.2005.853696"}],"container-title":["Journal of Electronic Testing"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-015-5529-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s10836-015-5529-1\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-015-5529-1","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,8,27]],"date-time":"2019-08-27T18:04:51Z","timestamp":1566929091000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s10836-015-5529-1"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2015,6]]},"references-count":46,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2015,6]]}},"alternative-id":["5529"],"URL":"https:\/\/doi.org\/10.1007\/s10836-015-5529-1","relation":{},"ISSN":["0923-8174","1573-0727"],"issn-type":[{"value":"0923-8174","type":"print"},{"value":"1573-0727","type":"electronic"}],"subject":[],"published":{"date-parts":[[2015,6]]}}}