{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,8]],"date-time":"2026-04-08T16:27:12Z","timestamp":1775665632908,"version":"3.50.1"},"reference-count":22,"publisher":"Springer Science and Business Media LLC","issue":"5","license":[{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2024,10,1]],"date-time":"2024-10-01T00:00:00Z","timestamp":1727740800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["J Electron Test"],"published-print":{"date-parts":[[2024,10]]},"DOI":"10.1007\/s10836-024-06143-5","type":"journal-article","created":{"date-parts":[[2024,10,3]],"date-time":"2024-10-03T09:02:03Z","timestamp":1727946123000},"page":"625-644","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":3,"title":["Investigating and Improving the Performance of Radiation-Hardened SRAM Cell with the Use of Multi-Voltage Transistors"],"prefix":"10.1007","volume":"40","author":[{"given":"Rachana","family":"Ahirwar","sequence":"first","affiliation":[]},{"given":"Manisha","family":"Pattanaik","sequence":"additional","affiliation":[]},{"given":"Pankaj","family":"Srivastava","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2024,10,3]]},"reference":[{"key":"6143_CR1","doi-asserted-by":"publisher","first-page":"20184","DOI":"10.1109\/ACCESS.2022.3161147","volume":"11","author":"S Pal","year":"2022","unstructured":"Pal S, Chowdary G, Ki W-H, Tsui C-Y (2022) Energy-efficient dual-node-upset-recoverable 12T SRAM for Low-Power Aerospace Applications. IEEE Access 11:20184\u201320195","journal-title":"IEEE Access"},{"key":"6143_CR2","doi-asserted-by":"crossref","unstructured":"Jiang J, Xu Y, Zhu W, Xiao J, Zou S (2018) Quadruple cross-coupled latch-based 10T and 12T SRAM bit-cell designs for highly reliable terrestrial applications. IEEE Trans Circuits Syst I Regul Pap 66(3):967\u2013977","DOI":"10.1109\/TCSI.2018.2872507"},{"issue":"11","key":"6143_CR3","doi-asserted-by":"publisher","first-page":"3583","DOI":"10.1002\/cta.3093","volume":"49","author":"S Pal","year":"2021","unstructured":"Pal S, Divya D, Ki W-H, Islam A (2021) Radiation-hardened read-decoupled low-power 12t sram for space applications. Int J Circuit Theory Appl 49(11):3583\u20133596","journal-title":"Int J Circuit Theory Appl"},{"issue":"1","key":"6143_CR4","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1109\/TNS.2017.2756441","volume":"65","author":"MJ Gadlage","year":"2018","unstructured":"Gadlage MJ, Roach AH, Duncan AR, Williams AM, Bossev DP, Kay MJ (2018) Multiple-cell upsets induced by single high-energy electrons. IEEE Trans Nucl Sci 65(1):211\u2013216","journal-title":"IEEE Trans Nucl Sci"},{"issue":"3","key":"6143_CR5","doi-asserted-by":"publisher","first-page":"848","DOI":"10.1109\/TVLSI.2019.2955865","volume":"28","author":"Q Zhao","year":"2020","unstructured":"Zhao Q, Peng C, Chen J, Lin Z, Wu X (2020) Novel write-enhanced and highly reliable RHPD-12T SRAM cells for space applications. IEEE Trans Very Large Scale Integr VLSI Syst 28(3):848\u2013852","journal-title":"IEEE Trans Very Large Scale Integr VLSI Syst"},{"key":"6143_CR6","doi-asserted-by":"crossref","unstructured":"Sharma R, Mondal D, Shah AP (2023) Radiation hardened 12T SRAM cell with improved writing capability for space applications. Memories-materials, Devices, Circuits and systems 5:100071","DOI":"10.1016\/j.memori.2023.100071"},{"key":"6143_CR7","doi-asserted-by":"crossref","unstructured":"Liu Z, Zhang H, Xie Y, Bi D, Hu Z, Zou S, Zhang Z (2023) High-performance and highly-stable soft error resistant 12T SRAM cell for space applications. Microelectron Reliab 141:114885","DOI":"10.1016\/j.microrel.2022.114885"},{"key":"6143_CR8","doi-asserted-by":"crossref","unstructured":"Prasad G, Mandi BC, Ali M (2022) Energy-efficient radiation hardened SRAM cell for low voltage terrestrial applications. Microelectron J 120:105340","DOI":"10.1016\/j.mejo.2021.105340"},{"issue":"1","key":"6143_CR9","doi-asserted-by":"publisher","first-page":"58","DOI":"10.1109\/TDMR.2019.2956601","volume":"20","author":"CI Kumar","year":"2019","unstructured":"Kumar CI, Anand B (2019) A highly reliable and energy efficient radiation hardened 12T SRAM cell Design. IEEE Trans Device Mater Reliab 20(1):58\u201366","journal-title":"IEEE Trans Device Mater Reliab"},{"issue":"6","key":"6143_CR10","doi-asserted-by":"publisher","first-page":"2874","DOI":"10.1109\/23.556880","volume":"43","author":"T Calin","year":"1996","unstructured":"Calin T, Nicolaidis M, Velazco R (1996) Upset hardened memory design for submicron CMOS technology. IEEE Trans Nucl Sci 43(6):2874\u20132878","journal-title":"IEEE Trans Nucl Sci"},{"issue":"3","key":"6143_CR11","doi-asserted-by":"publisher","first-page":"388","DOI":"10.1109\/TDMR.2016.2593590","volume":"16","author":"C Qi","year":"2016","unstructured":"Qi C, Xiao L, Wang T, Li J, Li L (2016) A highly reliable memory cell design combined with layout-level approach to tolerant single-event upsets. IEEE Trans Device Mater Reliab 16(3):388\u2013395","journal-title":"IEEE Trans Device Mater Reliab"},{"issue":"2","key":"6143_CR12","doi-asserted-by":"publisher","first-page":"407","DOI":"10.1109\/TVLSI.2018.2879341","volume":"27","author":"C Peng","year":"2019","unstructured":"Peng C, Huang J, Liu C, Zhao Q, Xiao S, Wu X, Lin Z, Chen J, Zeng X (2019) Radiation-hardened 14T SRAM bitcell with speed and power optimized for space application. IEEE Trans Very Large Scale Integr VLSI Syst 27(2):407\u2013415","journal-title":"IEEE Trans Very Large Scale Integr VLSI Syst"},{"issue":"10","key":"6143_CR13","first-page":"3336","volume":"68","author":"S Pal","year":"2021","unstructured":"Pal S, Mohapatra S, Ki W-H, Islam A (2021) Soft-error-aware read-decoupled SRAM with multi-node recovery for aerospace applications. IEEE Trans Circuits Syst II Express Briefs 68(10):3336\u20133340","journal-title":"IEEE Trans Circuits Syst II Express Briefs"},{"issue":"6","key":"6143_CR14","first-page":"2147","volume":"68","author":"S Pal","year":"2021","unstructured":"Pal S, Sri DD, Ki W-H, Islam A (June 2021) Highly stable low power radiation hardened memory-by-design SRAM for space applications. IEEE Trans Circuits Syst II Express Briefs 68(6):2147\u20132151","journal-title":"IEEE Trans Circuits Syst II Express Briefs"},{"key":"6143_CR15","doi-asserted-by":"publisher","first-page":"171","DOI":"10.1007\/s10836-024-06113-x","volume":"40","author":"R Ahirwar","year":"2024","unstructured":"Ahirwar R, Pattanaik M, Srivastava P (2024) Radiation hardened by design-based voltage controlled oscillator for low power phase locked loop application. J Electron Test 40:171\u2013184","journal-title":"J Electron Test"},{"issue":"5","key":"6143_CR16","doi-asserted-by":"publisher","first-page":"2246","DOI":"10.1109\/TED.2021.3061642","volume":"68","author":"S Pal","year":"2021","unstructured":"Pal S, Sri DD, Ki W-H, Islam A (2021) Soft-error resilient read decoupled SRAM with multi-node upset recovery for space applications. IEEE Trans Electron Devices 68(5):2246\u20132254","journal-title":"IEEE Trans Electron Devices"},{"issue":"1","key":"6143_CR17","doi-asserted-by":"publisher","first-page":"418","DOI":"10.1109\/TNS.2017.2783935","volume":"65","author":"Z Wu","year":"2018","unstructured":"Wu Z, Chen S (2018) nMOS transistor location adjustment for N-Hit single-event transient mitigation in 65-nm CMOS bulk technology. IEEE Trans Nucl Sci 65(1):418\u2013425","journal-title":"IEEE Trans Nucl Sci"},{"issue":"4","key":"6143_CR18","doi-asserted-by":"publisher","first-page":"1560","DOI":"10.1109\/TCSI.2022.3147675","volume":"69","author":"S Pal","year":"2022","unstructured":"Pal S, Ki W-H, Tsui C-Y (2022) Soft-error-aware read-stability-enhanced low-power 12T SRAM With multi-node upset recoverability for aerospace applications. IEEE Trans Circuits Syst I Regul Pap 69(4):1560\u20131570","journal-title":"IEEE Trans Circuits Syst I Regul Pap"},{"key":"6143_CR19","doi-asserted-by":"publisher","DOI":"10.1016\/j.mejo.2023.105954","volume":"141","author":"P Li","year":"2023","unstructured":"Li P, Wang X, Zhang Y, Wang H, Lu J, Zhao Q, Hao L, Peng C, Lu W, Lin Z et al (2023) Novel radiation-hardened-by-design (RHBD) 14T memory cell for aerospace applications in 65 nm CMOS technology. Microelectron J 141:105954","journal-title":"Microelectron J"},{"key":"6143_CR20","doi-asserted-by":"crossref","unstructured":"Dohar SS, SR\u00a0K, VM\u00a0H, NK YB (2024) A 1.2 v single event multinode upset tolerant rhsc 12t memory cell in 65-nm cmos. IEEE Transactions on Electron Devices 71(2):1054\u20131059","DOI":"10.1109\/TED.2023.3343316"},{"key":"6143_CR21","doi-asserted-by":"crossref","unstructured":"Rajput AK, Pattanaik M, Kaushal G (2023) An energy-efficient 10T SRAM in-memory computing macro for artificial intelligence edge processor. Memories - materials, devices, circuits and systems 5:100076","DOI":"10.1016\/j.memori.2023.100076"},{"key":"6143_CR22","doi-asserted-by":"publisher","first-page":"96256","DOI":"10.1109\/ACCESS.2023.3310570","volume":"11","author":"PK Mukku","year":"2023","unstructured":"Mukku PK, Lorenzo R (2023) Double node upset immune RHBD-14T SRAM cell for space and satellite applications. IEEE Access 11:96256\u201396271","journal-title":"IEEE Access"}],"container-title":["Journal of Electronic Testing"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-024-06143-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s10836-024-06143-5\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-024-06143-5.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,12,2]],"date-time":"2024-12-02T03:04:14Z","timestamp":1733108654000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s10836-024-06143-5"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2024,10]]},"references-count":22,"journal-issue":{"issue":"5","published-print":{"date-parts":[[2024,10]]}},"alternative-id":["6143"],"URL":"https:\/\/doi.org\/10.1007\/s10836-024-06143-5","relation":{},"ISSN":["0923-8174","1573-0727"],"issn-type":[{"value":"0923-8174","type":"print"},{"value":"1573-0727","type":"electronic"}],"subject":[],"published":{"date-parts":[[2024,10]]},"assertion":[{"value":"25 July 2024","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"24 September 2024","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"3 October 2024","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"Not applicable.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Ethics Approval"}},{"value":"Not applicable.","order":3,"name":"Ethics","group":{"name":"EthicsHeading","label":"Consent for Publication"}},{"value":"Not applicable.","order":4,"name":"Ethics","group":{"name":"EthicsHeading","label":"Consent for Participate"}},{"value":"The authors declare that they have no competing interests.","order":5,"name":"Ethics","group":{"name":"EthicsHeading","label":"Competing Interests"}}]}}