{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,9,11]],"date-time":"2025-09-11T19:16:38Z","timestamp":1757618198688,"version":"3.44.0"},"reference-count":32,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2025,5,27]],"date-time":"2025-05-27T00:00:00Z","timestamp":1748304000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,5,27]],"date-time":"2025-05-27T00:00:00Z","timestamp":1748304000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["J Electron Test"],"published-print":{"date-parts":[[2025,6]]},"DOI":"10.1007\/s10836-025-06182-6","type":"journal-article","created":{"date-parts":[[2025,5,27]],"date-time":"2025-05-27T02:50:34Z","timestamp":1748314234000},"page":"303-312","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Analyzing the Effectiveness of Various NMOS Layouts for Total Ionizing Dose Hardening in 180nm CMOS"],"prefix":"10.1007","volume":"41","author":[{"ORCID":"https:\/\/orcid.org\/0000-0003-4540-6269","authenticated-orcid":false,"given":"Munish","family":"Malik","sequence":"first","affiliation":[]},{"given":"Neelam.R.","family":"Prakash","sequence":"additional","affiliation":[]},{"given":"Ajay","family":"Kumar","sequence":"additional","affiliation":[]},{"given":"Jasbir","family":"Kaur","sequence":"additional","affiliation":[]},{"given":"Amit","family":"Singh","sequence":"additional","affiliation":[]},{"given":"Kavita","family":"Monga","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,5,27]]},"reference":[{"key":"6182_CR1","unstructured":"European Space Agency. SPace ENVironment Information System (SPENVIS). Available: https:\/\/www.spenvis.oma be\/regulation.php"},{"issue":"5712","key":"6182_CR2","doi-asserted-by":"publisher","first-page":"1085","DOI":"10.1126\/science.1107466","volume":"307","author":"D Smith","year":"2005","unstructured":"Smith D, Lopez LI, Lin RP, Barrington-Leigh CP (2005) Terrestrial gamma-ray flashes observed up to 20 MeV. Science 307(5712):1085\u20131088","journal-title":"Science"},{"key":"6182_CR3","doi-asserted-by":"crossref","unstructured":"Roberts O J, Fitzpatrick1 G, Priftis G, Bedka K, Chronis T, McBreen S, Briggs M S, Cramer E, Mailyan B, Stanbro M (2017) \u201cTerrestrial gamma ray flashes due to particle acceleration in tropical storm systems,\u201d J Geophys Res, Atmos,vol 122, no 6, pp 3374-3395, Mar. 2017. [Online]. Available: http:\/\/doi.wiley.com\/10.1002\/2016JD025799","DOI":"10.1002\/2016JD025799"},{"key":"6182_CR4","unstructured":"George C, Messenger, Milton S A (1992) \u201cThe Effects of Radiation on Electronic Systems,\u201d Springer Press, May 1992"},{"key":"6182_CR5","doi-asserted-by":"crossref","unstructured":"Bourdarie S, Xapsos M (2008) \u201cThe near-earth space radiation environment\u201d. IEEE Trans Nucl Sci 55(4):1810\u20131832","DOI":"10.1109\/TNS.2008.2001409"},{"issue":"6","key":"6182_CR6","doi-asserted-by":"publisher","first-page":"3103","DOI":"10.1109\/TNS.2006.885952","volume":"53","author":"HJ Barnaby","year":"2006","unstructured":"Barnaby HJ (2006) Total-Ionizing-Dose Effects in Modern CMOS Technologies. IEEE Trans Nul Sci 53(6):3103\u20133120","journal-title":"IEEE Trans Nul Sci"},{"issue":"6","key":"6182_CR7","doi-asserted-by":"publisher","first-page":"1236","DOI":"10.1109\/TNS.1984.4333489","volume":"31","author":"TR Oldham","year":"1984","unstructured":"Oldham TR (1984) Analysis of damage in MOS devices in several radiation environments. IEEE Trans Nucl Sci 31(6):1236\u20131241","journal-title":"IEEE Trans Nucl Sci"},{"key":"6182_CR8","doi-asserted-by":"crossref","unstructured":"Kumar M, Ubhi J S, Basra S, Chawla A, Jatana H S (2021) \"Total ionizing dose hardness analysis of transistors in commercial 180 nm CMOS technology,\" Microelectron J, Volume 115:105182, ISSN 0026-2692","DOI":"10.1016\/j.mejo.2021.105182"},{"issue":"5","key":"6182_CR9","doi-asserted-by":"publisher","first-page":"697","DOI":"10.1109\/TNS.2021.3065842","volume":"68","author":"H Dewitte","year":"2021","unstructured":"Dewitte H, Paillet P, Rizzolo S, Le Roch A, Marcandella C, Goiffon V (2021) Ultra-High Total Ionizing Dose Effects on MOSFETs for Analog Applications. IEEE Trans Nuclear Sci 68(5):697\u2013706. https:\/\/doi.org\/10.1109\/TNS.2021.3065842","journal-title":"IEEE Trans Nuclear Sci"},{"issue":"6","key":"6182_CR10","doi-asserted-by":"publisher","first-page":"2092","DOI":"10.1109\/TNS.2007.910867","volume":"54","author":"KC Mohr","year":"2007","unstructured":"Mohr KC, Clark LT, Holbert KE (2007) A 130-nm RHBD SRAM With High Speed SET and Area Efficient TID Mitigation. IEEE Trans Nuclear Sci 54(6):2092\u20132099. https:\/\/doi.org\/10.1109\/TNS.2007.910867","journal-title":"IEEE Trans Nuclear Sci"},{"key":"6182_CR11","unstructured":"James R S, Marty R S, Paul E D. \"Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Test Guideline for Proton and Heavy Ion Single-Event Effects,\" Sandia National Laboratories Albuquerque, New Mexico"},{"key":"6182_CR12","unstructured":"McLean FB, Oldham T R (1987) \"Basic Mechanisms of Radiation Effects in Electronic Materials and Devices,\" Harry Diamond Laboratories Technical Report, No. HDL-TR-2129, September 1987"},{"key":"6182_CR13","unstructured":"Pinchuk V, Yanchuk T, Nazarov A, Lysenko V (1996) \"Effect of hydrogen on Frenkel-pair annihilation in silicon: A quantum-chemical study\" Semiconductors - SEMICONDUCTORS-ENGL TR, vol 30, pp 1111-1115, Dec. 1996"},{"issue":"6","key":"6182_CR14","doi-asserted-by":"publisher","first-page":"1872","DOI":"10.1109\/23.914462","volume":"47","author":"B Djezzar","year":"2000","unstructured":"Djezzar B, Smatti A, Amrouche A, Kechouane M (2000) Channel-length impact on radiation-induced threshold-voltage shift in N-MOSFET devices at low gamma ray radiation doses. IEEE Trans Nuclear Sci 47(6):1872\u20131878. https:\/\/doi.org\/10.1109\/23.914462","journal-title":"IEEE Trans Nuclear Sci"},{"key":"6182_CR15","doi-asserted-by":"crossref","unstructured":"Saks N S, Ancona M G, Modolo J A (1984) \u201cRadiation effects in MOS capacitors with very thin oxides at 80 K,\u201dIEEE Trans Nucl Sci, vol NS-31, no 6, pp 1249-1255, Dec. 1984","DOI":"10.1109\/TNS.1984.4333491"},{"key":"6182_CR16","doi-asserted-by":"crossref","unstructured":"Faccio F, Cervelli G (2005) \u201c Radiation-induced edge effects in deep sub micron CMOS transistors,\u201d IEEE Trans Nucl Sci, vol 52, no 6,pp 2413-2420, Dec 2005","DOI":"10.1109\/TNS.2005.860698"},{"issue":"4","key":"6182_CR17","doi-asserted-by":"publisher","first-page":"1833","DOI":"10.1109\/TNS.2008.2001040","volume":"55","author":"R Schwank James","year":"2008","unstructured":"Schwank James R, Shaneyfelt Marty R, Fleetwood Daniel M, Felix James A, Dodd Paul E, Philippe Paillet (2008) Radiation effects in MOS Oxides. IEEE Trans Nucl Sci 55(4):1833\u20131853","journal-title":"IEEE Trans Nucl Sci"},{"issue":"4","key":"6182_CR18","doi-asserted-by":"publisher","first-page":"3084","DOI":"10.1109\/TNS.2013.2268390","volume":"60","author":"SuL Min","year":"2013","unstructured":"Min SuL, HeeChul L (2013) Dummy Gate-Assisted n-MOSFET Layout for a Radiation-Tolerant Integrated Circuit. IEEE Trans Nucl Sci 60(4):3084\u20133091","journal-title":"IEEE Trans Nucl Sci"},{"key":"6182_CR19","doi-asserted-by":"publisher","unstructured":"Malik M, Prakash NR, Kumar A, Jatana HS (2021) \"L Style n-MOSFET Layout For Mitigating TID Effects\". Silicon. https:\/\/doi.org\/10.1007\/s12633-021-01150-z","DOI":"10.1007\/s12633-021-01150-z"},{"issue":"4","key":"6182_CR20","doi-asserted-by":"publisher","first-page":"1903","DOI":"10.1109\/TNS.2008.2000480","volume":"55","author":"RC Lacoe","year":"2008","unstructured":"Lacoe RC (2008) Improving integrated circuit performance through the application of hardness-by-design methodology. IEEE Trans Nucl Sci 55(4):1903\u20131925","journal-title":"IEEE Trans Nucl Sci"},{"key":"6182_CR21","doi-asserted-by":"publisher","first-page":"344","DOI":"10.1109\/JSSC.1977.1050912","volume":"12","author":"AGF Dingwall","year":"1977","unstructured":"Dingwall AGF, Stricker RE (1977) C2L: A New High Speed High-Density Bulk CMOS Technology. IEEE J Solid-state Circ 12:344\u2013349","journal-title":"IEEE J Solid-state Circ"},{"key":"6182_CR22","doi-asserted-by":"publisher","first-page":"981","DOI":"10.1016\/S0038-1101(00)00010-1","volume":"44","author":"A Giraldo","year":"2000","unstructured":"Giraldo A, Paccagnella A, Minzoni A (2000) Aspect ratio calculationin n-channel MOSFET\u2019s with a gate-enclosed layout. Solid State Electron. 44:981\u2013989","journal-title":"Solid State Electron."},{"key":"6182_CR23","doi-asserted-by":"publisher","unstructured":"Anelli G, Campbell M, Delmastro M, Faccio F, Floria S, Giraldo A (1999) \"Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects,\" in IEEE Trans Nucl Sci, vol 46, no 6, pp 1690-1696, Dec. 1999, https:\/\/doi.org\/10.1109\/23.819140. keywords: CMOS technology;Very large scale integration;Circuits;Large Hadron Collider;Testing;Noise measurement;Transistors;Signal to noise ratio;Semiconductor device modeling;Leakage current,","DOI":"10.1109\/23.819140."},{"key":"6182_CR24","doi-asserted-by":"crossref","unstructured":"Bezhenova V, Michalowska-Forsyth A (2018) Aspect ratio of radiation-hardened MOS transistors. Elektrotech Inftech 135:61-68. https:\/\/doi.org\/10.1007\/s00502-017-0575-2","DOI":"10.1007\/s00502-017-0575-2"},{"key":"6182_CR25","doi-asserted-by":"publisher","unstructured":"Minwoong L, Seongik C, Namho L, Jongyeol K (2018) Radiation-tolerance analysis of I-gate n-MOSFET according to isolation oxide module in the CMOS bulk process, Microelectron Eng, Volume 200, pp 45-50, ISSN 0167-9317, https:\/\/doi.org\/10.1016\/j.mee.2018.08.007","DOI":"10.1016\/j.mee.2018.08.007"},{"key":"6182_CR26","doi-asserted-by":"publisher","first-page":"861","DOI":"10.1109\/TNS.2005.852652","volume":"52","author":"L Chen","year":"2005","unstructured":"Chen L, Gingrich DM (2005) Study of N- Channel MOSFETs with an Enclosed-Gate Layout in a 0.18 um CMOS technology. IEEE Trans Nul Sci 52:861\u2013867","journal-title":"IEEE Trans Nul Sci"},{"issue":"6","key":"6182_CR27","doi-asserted-by":"publisher","first-page":"2100","DOI":"10.1109\/TNS.2007.910123","volume":"54","author":"Jun Bongim","year":"2007","unstructured":"Bongim Jun, Sutton Akil K, Diestelhorst Ryan M, Duperon Gregory J, Cressler John D, Black Jeffrey D (2007) The Application of RHBD to n-MOSFETs Intended for Use in Cryogenic-Temperature Radiation Environments. IEEE Trans Nucl Sci 54(6):2100\u20132105. https:\/\/doi.org\/10.1109\/TNS.2007.910123","journal-title":"IEEE Trans Nucl Sci"},{"key":"6182_CR28","doi-asserted-by":"publisher","unstructured":"Robert C M (2003), Satellite RF Communications and Onboard Processing, Encyclopedia of Physical Science and Technology (Third Edition), Academic Press, pp 439-455, ISBN 9780122274107, https:\/\/doi.org\/10.1016\/B0-12-227410-5\/00884-X","DOI":"10.1016\/B0-12-227410-5\/00884-X"},{"key":"6182_CR29","unstructured":"Cogenda TCAD Tool Suite [Online]. Available: http:\/\/www.congenda.com"},{"key":"6182_CR30","doi-asserted-by":"crossref","unstructured":"Baker R (2010) CMOS: Circuit Design, Layout, and Simulation, Third Edition","DOI":"10.1002\/9780470891179"},{"key":"6182_CR31","doi-asserted-by":"publisher","unstructured":"Minwoong L, Seongik C, Namho L, Jongyeol K (2018) \"Radiation-tolerance analysis of I-gate n-MOSFET according to isolation oxide module in the CMOS bulk process\", Microelectron Eng, Volume 200, pp 45-50, ISSN 0167-9317, https:\/\/doi.org\/10.1016\/j.mee.2018.08.007","DOI":"10.1016\/j.mee.2018.08.007"},{"key":"6182_CR32","doi-asserted-by":"crossref","unstructured":"Kuroki K, Kimura A, Hirakawa K, Iwase M, Ogasawara M, Yoda T, Ishihara1 N, Ito1 H (2023) \"Design and fabrication results of Z-gate layout MOSFETs for radiation hardness integrated circuit\", Japanese J Appl Phys IOP Publishing","DOI":"10.35848\/1347-4065\/acb0d7"}],"container-title":["Journal of Electronic Testing"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-025-06182-6.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s10836-025-06182-6\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-025-06182-6.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,9,6]],"date-time":"2025-09-06T15:45:26Z","timestamp":1757173526000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s10836-025-06182-6"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,5,27]]},"references-count":32,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2025,6]]}},"alternative-id":["6182"],"URL":"https:\/\/doi.org\/10.1007\/s10836-025-06182-6","relation":{},"ISSN":["0923-8174","1573-0727"],"issn-type":[{"type":"print","value":"0923-8174"},{"type":"electronic","value":"1573-0727"}],"subject":[],"published":{"date-parts":[[2025,5,27]]},"assertion":[{"value":"13 March 2025","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"14 May 2025","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 May 2025","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"The authors declare that they have no conflicting and competing interests.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Conflicts of Interest"}},{"value":"The authors declare that all procedures followed were in accordance with the ethical standards for manuscripts submitted to Silicon Journal.","order":3,"name":"Ethics","group":{"name":"EthicsHeading","label":"Compliance with Ethical Standards"}},{"value":"As no human was involved in this study. Not Applicable.","order":4,"name":"Ethics","group":{"name":"EthicsHeading","label":"Consent to Participate"}},{"value":"All the authors declare their consent for publication of the article on acceptance.","order":5,"name":"Ethics","group":{"name":"EthicsHeading","label":"Consent for Publication"}}]}}