{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,15]],"date-time":"2025-10-15T00:21:09Z","timestamp":1760487669572,"version":"build-2065373602"},"reference-count":21,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T00:00:00Z","timestamp":1754006400000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2025,8,1]],"date-time":"2025-08-01T00:00:00Z","timestamp":1754006400000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"funder":[{"name":"Beijing Science and Technology Project","award":["Z211100004421012"],"award-info":[{"award-number":["Z211100004421012"]}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["J Electron Test"],"published-print":{"date-parts":[[2025,8]]},"DOI":"10.1007\/s10836-025-06192-4","type":"journal-article","created":{"date-parts":[[2025,8,23]],"date-time":"2025-08-23T07:33:53Z","timestamp":1755934433000},"page":"431-439","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Failure Analysis and Power-on Sequence Optimization for InP DHBT Stacked Amplifiers"],"prefix":"10.1007","volume":"41","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-0012-7656","authenticated-orcid":false,"given":"Yao","family":"Li","sequence":"first","affiliation":[]},{"given":"Yan","family":"Gao","sequence":"additional","affiliation":[]},{"given":"GuoZhen","family":"Hu","sequence":"additional","affiliation":[]},{"given":"Guoqing","family":"Huang","sequence":"additional","affiliation":[]},{"given":"Liang","family":"Zhao","sequence":"additional","affiliation":[]},{"given":"Yan","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Weihua","family":"Yu","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2025,8,23]]},"reference":[{"issue":"5","key":"6192_CR1","doi-asserted-by":"publisher","first-page":"1323","DOI":"10.1109\/JSSC.2024.3353220","volume":"59","author":"F Zhao","year":"2024","unstructured":"Zhao F, Deng W, Jia H, Ye W, Wan R, Wang Z, Chi B (2024) A band-shifting millimeter-wave T\/R front-end using inductance-mutation transformer technique for multiband phased-array transceivers. IEEE J Solid-State Circ 59(5):1323\u20131336","journal-title":"IEEE J Solid-State Circ"},{"key":"6192_CR2","doi-asserted-by":"crossref","unstructured":"Davy N, Deng M, Nodjiadjim V, Mukherjee C, Riet M, Mismer C, Ardouin B, Maneux C (2023) InP DHBT on-wafer RF characterization and small-signal modelling up to 220 GHz. In: Proc. 2023 18th European Microwave Integrated Circuits Conference (EuMIC), Nuremberg, Germany, pp 101\u2013104","DOI":"10.23919\/EuMIC58042.2023.10288849"},{"key":"6192_CR3","unstructured":"Dai J, Sun Y, Li Z, Chang L, Yao J, Cheng W (2021) 0.25 $$\\mu$$m InP DHBT with fmax = 620 GHz. Res Prog Solid State Electron 41(3):241"},{"issue":"12","key":"6192_CR4","doi-asserted-by":"publisher","first-page":"4914","DOI":"10.1109\/TMTT.2017.2727498","volume":"65","author":"L Galatro","year":"2017","unstructured":"Galatro L, Pawlak A, Schroter M, Spirito M (2017) Capacitively loaded inverted CPWs for distributed TRL-based de-embedding at (sub) mm-waves. IEEE Trans Microw Theory Tech 65(12):4914\u20134924","journal-title":"IEEE Trans Microw Theory Tech"},{"key":"6192_CR5","doi-asserted-by":"crossref","unstructured":"Deng M, Mukherjee C, Davy N, Nodjiadjim V, Riet M, Mismer C, Renaudier J, De Matos M, Maneux C (2021) InP DHBT characterization up to 500 GHz and compact model validation towards THz circuit design. In: Proc. 2021 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS). Phoenix, AZ, USA, pp 1\u20134","DOI":"10.1109\/BCICTS50416.2021.9682466"},{"issue":"8","key":"6192_CR6","doi-asserted-by":"publisher","first-page":"3475","DOI":"10.1109\/TMTT.2019.2919538","volume":"67","author":"R Lozar","year":"2019","unstructured":"Lozar R, Ohlrogge M, Weber R, Ridler NM, Shang X, Probst T, Arz U (2019) A comparative study of on-wafer and waveguide module S-parameter measurements at D-band frequencies. IEEE Trans Microw Theory Tech 67(8):3475\u20133484","journal-title":"IEEE Trans Microw Theory Tech"},{"key":"6192_CR7","doi-asserted-by":"crossref","unstructured":"Dahlstrom M, Rodwell M J W (2004) Current density limits in InP DHBTs: collector current spreading and effective electron velocity. In: Proc 16th Int Conf Indium Phosphide Relat Mater (IPRM), Sendai, Japan, pp 366\u2013369","DOI":"10.1109\/ICIPRM.2004.1442731"},{"key":"6192_CR8","doi-asserted-by":"crossref","unstructured":"Griffith Z, Lind E, Rodwell MJW, Fang X-M, Loubychev D, Wu Y, Fastenau JM, Liu AWK (2007) Sub-300 nm InGaAs\/InP Type-I DHBTs with a 150 nm collector demonstrating 755 GHz fmax and 416 GHz fT. In: Proc. 2007 IEEE 19th Int Conf Indium Phosphide Relat Mater (IPRM). Kitakyushu, Japan, pp 403\u2013406","DOI":"10.1109\/ICIPRM.2007.381209"},{"key":"6192_CR9","doi-asserted-by":"crossref","unstructured":"Low TS, Dvorak MW, Farhoud M, Yeats RE, Iwamoto M, Essilfie GK, Engel T, Keppeler B, Chang JSC, Hadley J, Patterson G, Kellert F, Moll N, Bahl S R, Hutchinson C P, Ehlers E, Adamski M E, Culver M K, D\u2019Avanzo DC, Shirley T (2005) GaAsSb DHBT IC technology for RF and microwave instrumentation. In: Proc 2005 IEEE Compound Semiconductor Integrated Circuit Symp (CSIC). La Jolla, CA, USA, pp 4\u20135","DOI":"10.1109\/CSICS.2005.1531760"},{"issue":"2","key":"6192_CR10","doi-asserted-by":"publisher","first-page":"84","DOI":"10.1109\/LED.2005.862673","volume":"27","author":"W Snodgrass","year":"2006","unstructured":"Snodgrass W, Wu B-R, Hafez W, Cheng K-Y, Feng M (2006) Graded base type-II InP\/GaAsSb DHBT with ft=475 GHz. IEEE Electron Device Lett 27(2):84\u201386","journal-title":"IEEE Electron Device Lett"},{"issue":"4","key":"6192_CR11","doi-asserted-by":"publisher","first-page":"415","DOI":"10.1109\/TTHZ.2022.3155720","volume":"12","author":"I Lee","year":"2022","unstructured":"Lee I, Park G, Jeon S (2022) Analysis and demonstration of mm-wave distributed amplifiers with modified artificial transmission line model. IEEE Trans Terahertz Sci Technol 12(4):415\u2013425","journal-title":"IEEE Trans Terahertz Sci Technol"},{"issue":"6","key":"6192_CR12","doi-asserted-by":"publisher","first-page":"715","DOI":"10.1109\/LMWT.2023.3237683","volume":"33","author":"NLK Nguyen","year":"2023","unstructured":"Nguyen NLK, Cui C, Nguyen DP, Stameroff AN, Pham A-V (2023) A 7\u2013115-GHz distributed amplifier with 24-dBm output power using quadruple-stacked HBT in InP. IEEE Microw Wirel Technol Lett 33(6):715\u2013718","journal-title":"IEEE Microw Wirel Technol Lett"},{"issue":"6","key":"6192_CR13","doi-asserted-by":"publisher","first-page":"659","DOI":"10.1109\/TTHZ.2023.3320930","volume":"13","author":"C-G Choi","year":"2023","unstructured":"Choi C-G, Jeong H-H, Cho S-H, Kim S, Song H-J (2023) A 275-GHz InP HBT H-band amplifier with transmission line-based capacitively coupled resonator matching technique. IEEE Trans Terahertz Sci Technol 13(6):659\u2013670","journal-title":"IEEE Trans Terahertz Sci Technol"},{"key":"6192_CR14","doi-asserted-by":"crossref","unstructured":"Bolognesi CR, Watkins SP, Moll N (2003) Breakdown voltage limitations, impact ionization, and interband tunneling in InP\/GaAsSb\/InP type-II NpN DHBTs. In: Proc IEEE Int Electron Devices Meet (IEDM). Washington, DC, USA, pp 30.3.1\u201330.3.4","DOI":"10.1109\/IEDM.2003.1269381"},{"issue":"24","key":"6192_CR15","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1063\/1.3599582","volume":"98","author":"KY Cheng","year":"2011","unstructured":"Cheng KY, Liao CC, Xu H (2011) Hot electron injection effect on the microwave performance of type-I\/II AlInP\/GaAsSb\/InP double-heterojunction bipolar transistors. Appl Phys Lett 98(24):1\u20136","journal-title":"Appl Phys Lett"},{"issue":"4\u20135","key":"6192_CR16","doi-asserted-by":"publisher","first-page":"685","DOI":"10.1016\/S0026-2714(02)00045-8","volume":"42","author":"G Meneghesso","year":"2002","unstructured":"Meneghesso G, Zanoni E (2002) Failure modes and mechanisms of InP-based and metamorphic high electron mobility transistors. Microelectron Reliab 42(4\u20135):685\u2013708","journal-title":"Microelectron Reliab"},{"issue":"9\u201311","key":"6192_CR17","doi-asserted-by":"publisher","first-page":"1730","DOI":"10.1016\/j.microrel.2011.07.073","volume":"51","author":"GA Kone","year":"2011","unstructured":"Kone GA, Grandchamp B, Hainaut C (2011) Reliability of submicron InGaAs\/InP DHBT under thermal and electrical stresses. Microelectron Reliab 51(9\u201311):1730\u20131735","journal-title":"Microelectron Reliab"},{"issue":"12","key":"6192_CR18","doi-asserted-by":"publisher","first-page":"2261","DOI":"10.1109\/16.887006","volume":"47","author":"H Wang","year":"2000","unstructured":"Wang H, Ng GI (2000) Current transient in polyimide-passivated InP\/InGaAs heterojunction bipolar transistors: systematic experiments and physical model. IEEE Trans Electron Devices 47(12):2261\u20132269","journal-title":"IEEE Trans Electron Devices"},{"issue":"11","key":"6192_CR19","doi-asserted-by":"publisher","first-page":"2640","DOI":"10.1109\/16.960390","volume":"48","author":"Y Zhu","year":"2001","unstructured":"Zhu Y, Twynam JK, Yagura M, Hasegawa M, Hasegawa T, Eguchi Y, Amano Y, Suematsu E, Sakuno K, Matsumoto N, Sato H, Hashizume N (2001) Self-heating effect compensation in HBTs and its analysis and simulation. IEEE Trans Electron Devices 48(11):2640\u20132646","journal-title":"IEEE Trans Electron Devices"},{"key":"6192_CR20","doi-asserted-by":"crossref","unstructured":"Alizadeh A, Rowell PV, Griffith Z, Urteaga ME, Rodwell MJW (2024) A 78-mW 220-GHz power amplifier with peak 18.4% PAE in 250-nm InP HBT technology. IEEE Trans Microw Theory Tech 72(10):5789\u20135798","DOI":"10.1109\/TMTT.2024.3383861"},{"key":"6192_CR21","doi-asserted-by":"crossref","unstructured":"Li Y, Zhou Y, Gao Y, Hu G, Sun Y, Yu W (2025) A high-efficiency D-band linear amplifier with 25.2% peak PAE and 40-GHz large-signal bandwidth in 250-nm InP DHBT. IEEE Microw Wirel Technol Lett 35(2):1\u20134","DOI":"10.1109\/LMWT.2025.3570257"}],"container-title":["Journal of Electronic Testing"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-025-06192-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s10836-025-06192-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s10836-025-06192-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,10,14]],"date-time":"2025-10-14T04:36:48Z","timestamp":1760416608000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s10836-025-06192-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2025,8]]},"references-count":21,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2025,8]]}},"alternative-id":["6192"],"URL":"https:\/\/doi.org\/10.1007\/s10836-025-06192-4","relation":{},"ISSN":["0923-8174","1573-0727"],"issn-type":[{"type":"print","value":"0923-8174"},{"type":"electronic","value":"1573-0727"}],"subject":[],"published":{"date-parts":[[2025,8]]},"assertion":[{"value":"27 April 2025","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"30 July 2025","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"23 August 2025","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"The authors have no competing interests to declare that are relevant to the content of this article.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Conflicts of Interest"}}]}}