{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,13]],"date-time":"2026-03-13T07:35:57Z","timestamp":1773387357397,"version":"3.50.1"},"reference-count":29,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2023,8,16]],"date-time":"2023-08-16T00:00:00Z","timestamp":1692144000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,8,16]],"date-time":"2023-08-16T00:00:00Z","timestamp":1692144000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"funder":[{"name":"University Grants Commission, Government of India","award":["3742\/(NET-JULY 2018)"],"award-info":[{"award-number":["3742\/(NET-JULY 2018)"]}]},{"name":"University Grants Commission, Government of India","award":["190510736394"],"award-info":[{"award-number":["190510736394"]}]}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Neural Process Lett"],"published-print":{"date-parts":[[2023,12]]},"DOI":"10.1007\/s11063-023-11387-x","type":"journal-article","created":{"date-parts":[[2023,8,16]],"date-time":"2023-08-16T04:02:00Z","timestamp":1692158520000},"page":"11527-11539","update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":7,"title":["1T Spiking Neuron Using Ferroelectric Junctionless FET with Ultra-Low Energy Consumption of 24 aJ\/Spike"],"prefix":"10.1007","volume":"55","author":[{"ORCID":"https:\/\/orcid.org\/0000-0002-8081-9133","authenticated-orcid":false,"given":"Mudasir A.","family":"Khanday","sequence":"first","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-1391-5803","authenticated-orcid":false,"given":"Shazia","family":"Rashid","sequence":"additional","affiliation":[]},{"ORCID":"https:\/\/orcid.org\/0000-0002-2514-5703","authenticated-orcid":false,"given":"Farooq A.","family":"Khanday","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2023,8,16]]},"reference":[{"issue":"10","key":"11387_CR1","doi-asserted-by":"publisher","first-page":"1629","DOI":"10.1109\/5.58356","volume":"78","author":"C Mead","year":"1990","unstructured":"Mead C (1990) Neuromorphic electronic systems. Proc IEEE 78(10):1629\u20131636. https:\/\/doi.org\/10.1109\/5.58356","journal-title":"Proc IEEE"},{"key":"11387_CR2","doi-asserted-by":"publisher","first-page":"434","DOI":"10.1038\/s41928-020-0448-2","volume":"3","author":"C Mead","year":"2020","unstructured":"Mead C (2020) How we created neuromorphic engineering. Nat Electron 3:434\u2013435. https:\/\/doi.org\/10.1038\/s41928-020-0448-2","journal-title":"Nat Electron"},{"issue":"7","key":"11387_CR3","doi-asserted-by":"publisher","first-page":"2108","DOI":"10.1109\/TNNLS.2018.2877454","volume":"30","author":"FA Khanday","year":"2019","unstructured":"Khanday FA, Kant NA, Dar MR, Zulkifli TZA, Psychalinos C (2019) Low-voltage low-power integrable CMOS circuit implementation of integer- and fractional-order FitzHugh\u2013Nagumo neuron model. IEEE Trans Neural Netw Learn Syst 30(7):2108\u20132122","journal-title":"IEEE Trans Neural Netw Learn Syst"},{"issue":"5","key":"11387_CR4","doi-asserted-by":"publisher","first-page":"3117","DOI":"10.1166\/jnn.2020.17390","volume":"20","author":"S Hwang","year":"2020","unstructured":"Hwang S, Lee J-J, Kwon M-W, Baek M-H, Jang T, Chang J, Lee J-H, Park B-G (2020) Analog complementary metal\u2013oxide\u2013semiconductor integrate-and-fire neuron circuit for overflow retaining in hardware spiking neural networks. J Nanosci Nanotechnol 20(5):3117\u20133122. https:\/\/doi.org\/10.1166\/jnn.2020.17390","journal-title":"J Nanosci Nanotechnol"},{"issue":"6","key":"11387_CR5","doi-asserted-by":"publisher","first-page":"696","DOI":"10.1049\/iet-cds.2018.5033","volume":"12","author":"FA Khanday","year":"2018","unstructured":"Khanday FA, Dar MR, Kant NA, Rossello JL, Psychalinos C (2018) 0.65 V integrable electronic realisation of integer- and fractional-order Hindmarsh-Rose neuron model using companding technique. Special Issue Low Volt Low Power Integr Circuits Syst IET Circuits, Devices Syst 12(6):696\u2013706. https:\/\/doi.org\/10.1049\/iet-cds.2018.5033","journal-title":"Special Issue Low Volt Low Power Integr Circuits Syst IET Circuits, Devices Syst"},{"issue":"1","key":"11387_CR6","doi-asserted-by":"publisher","first-page":"8257","DOI":"10.1038\/s41598-017-07418-y","volume":"7","author":"S Dutta","year":"2017","unstructured":"Dutta S, Kumar V, Shukla A, Mohapatra NR, Ganguly U (2017) Leaky integrate and fire neuron by charge-discharge dynamics in floating-body MOSFET. Sci Rep 7(1):8257. https:\/\/doi.org\/10.1038\/s41598-017-07418-y","journal-title":"Sci Rep"},{"key":"11387_CR7","doi-asserted-by":"publisher","unstructured":"Priyanka, Singh S, Panchore M (2022) Dopingless-TFET leaky-integrated-fire (LIF) neuron for high-speed energy efficient applications. In: IEEE transactions on nanotechnology. vol 21, pp 110\u2013117. https:\/\/doi.org\/10.1109\/TNANO.2022.3151241","DOI":"10.1109\/TNANO.2022.3151241"},{"issue":"8","key":"11387_CR8","doi-asserted-by":"publisher","first-page":"1301","DOI":"10.1109\/LED.2019.2924259","volume":"40","author":"D Chatterjee","year":"2019","unstructured":"Chatterjee D, Kottantharavil A (2019) A CMOS compatible bulk FinFET based ultra-low energy leaky integrate and fire neuron for spiking networks. IEEE Electron Device Lett 40(8):1301\u20131304. https:\/\/doi.org\/10.1109\/LED.2019.2924259","journal-title":"IEEE Electron Device Lett"},{"issue":"6","key":"11387_CR9","doi-asserted-by":"publisher","first-page":"2600","DOI":"10.1109\/TED.2020.2985076","volume":"67","author":"AK Kamal","year":"2020","unstructured":"Kamal AK, Singh J (2020) Simulation-based ultralow energy and high-speed LIF neuron using silicon bipolar Impact ionization MOSFET for spiking neural networks. IEEE Trans Electron Devices 67(6):2600\u20132606. https:\/\/doi.org\/10.1109\/TED.2020.2985076","journal-title":"IEEE Trans Electron Devices"},{"key":"11387_CR10","doi-asserted-by":"publisher","unstructured":"Wang Z, Crafton B, Gomez J, Xu R, Luo A, Krivokapic Z, Martin L, Datta S, Raychowdhury A, Khan AI (2018) Experimental demonstration of ferroelectric spiking neurons for unsupervised clustering. In: IEEE international electron devices meeting (IEDM), pp. 13.3.1\u201313.3.4. https:\/\/doi.org\/10.1109\/IEDM.2018.8614586","DOI":"10.1109\/IEDM.2018.8614586"},{"issue":"4","key":"11387_CR11","doi-asserted-by":"publisher","first-page":"1633","DOI":"10.1109\/TED.2021.3061036","volume":"68","author":"N Kamal","year":"2021","unstructured":"Kamal N, Singh J (2021) A highly scalable junctionless FET leaky integrate-and-fire neuron for spiking neural networks. IEEE Trans Electron Devices 68(4):1633\u20131638. https:\/\/doi.org\/10.1109\/TED.2021.3061036","journal-title":"IEEE Trans Electron Devices"},{"key":"11387_CR12","doi-asserted-by":"publisher","unstructured":"Rajakumari V, Pradhan KP (2023) BTBT based LIF junctionless FET neuron with plausible mimicking efficiency. IEEE Trans Nanotechnol. https:\/\/doi.org\/10.1109\/TNANO.2023.3247424","DOI":"10.1109\/TNANO.2023.3247424"},{"issue":"2","key":"11387_CR13","doi-asserted-by":"publisher","first-page":"208","DOI":"10.1109\/LED.2019.2958623","volume":"41","author":"J-K Han","year":"2020","unstructured":"Han J-K, Seo M, Kim W-K, Kim M-S, Kim S-Y, Kim M-S, Yun GJ, Lee GB, Yu J-M, Choi YK (2020) Mimicry of excitatory and inhibitory artificial neuron with leaky integrate-and-fire function by a single MOSFET. IEEE Electron Device Lett 41(2):208\u2013211. https:\/\/doi.org\/10.1109\/LED.2019.2958623","journal-title":"IEEE Electron Device Lett"},{"issue":"8","key":"11387_CR14","doi-asserted-by":"publisher","first-page":"4265","DOI":"10.1109\/TED.2022.3186274","volume":"69","author":"MA Khanday","year":"2022","unstructured":"Khanday MA, Bashir F, Khanday FA (2022) Single germanium MOSFET-based low energy and controllable leaky integrate-and-fire neuron for spiking neural networks. IEEE Trans Electron Devices 69(8):4265\u20134270. https:\/\/doi.org\/10.1109\/TED.2022.3186274","journal-title":"IEEE Trans Electron Devices"},{"issue":"6","key":"11387_CR15","doi-asserted-by":"publisher","first-page":"3142","DOI":"10.1109\/TED.2022.3167622","volume":"69","author":"J-K Han","year":"2022","unstructured":"Han J-K, Yu J-M, Choi Y-K (2022) A junctionless single transistor neuron with vertically stacked multiple nanowires for highly scalable neuromorphic hardware. IEEE Trans Electron Devices 69(6):3142\u20133146. https:\/\/doi.org\/10.1109\/TED.2022.3167622","journal-title":"IEEE Trans Electron Devices"},{"issue":"10","key":"11387_CR16","doi-asserted-by":"publisher","first-page":"451","DOI":"10.1109\/55.464814","volume":"16","author":"CE Weitzel","year":"1995","unstructured":"Weitzel CE (1995) Comparison of SiC, GaAs, and Si RF MESFET power densities. IEEE Electron Device Lett 16(10):451\u2013453. https:\/\/doi.org\/10.1109\/55.464814","journal-title":"IEEE Electron Device Lett"},{"issue":"4","key":"11387_CR17","doi-asserted-by":"publisher","first-page":"294","DOI":"10.1109\/LED.2015.2402517","volume":"36","author":"MH Lee","year":"2015","unstructured":"Lee MH et al (2015) Steep slope and near non-hysteresis of FETs with antiferroelectric-like HfZrO for low-power electronics. IEEE Electron Device Lett 36(4):294\u2013296. https:\/\/doi.org\/10.1109\/LED.2015.2402517","journal-title":"IEEE Electron Device Lett"},{"key":"11387_CR18","unstructured":"Atlas TCAD device simulator (2017) Silvaco TCAD software"},{"issue":"9","key":"11387_CR19","doi-asserted-by":"publisher","first-page":"1225","DOI":"10.1109\/LED.2012.2203091","volume":"33","author":"S Barraud","year":"2012","unstructured":"Barraud S et al (2012) Scaling of trigate junctionless nanowire MOSFET with gate length down to 13 nm. IEEE Electron Device Lett 33(9):1225\u20131227. https:\/\/doi.org\/10.1109\/LED.2012.2203091","journal-title":"IEEE Electron Device Lett"},{"issue":"4","key":"11387_CR20","doi-asserted-by":"publisher","first-page":"500","DOI":"10.1113\/jphysiol.1952.sp004764","volume":"117","author":"AL Hodgkin","year":"1952","unstructured":"Hodgkin AL, Huxley AF (1952) A quantitative description of membrane current and its application to conduction and excitation in nerve. J Physiol 117(4):500\u2013544. https:\/\/doi.org\/10.1113\/jphysiol.1952.sp004764","journal-title":"J Physiol"},{"issue":"4","key":"11387_CR21","doi-asserted-by":"publisher","first-page":"29","DOI":"10.3390\/jlpea9040029","volume":"9","author":"R Mahmoud","year":"2019","unstructured":"Mahmoud R, Madathumpadical N, Al-Nashash H (2019) TCAD simulation and analysis of selective buried oxide MOSFET dynamic power. J Low Power Electron Appl 9(4):29. https:\/\/doi.org\/10.3390\/jlpea9040029","journal-title":"J Low Power Electron Appl"},{"issue":"10","key":"11387_CR22","doi-asserted-by":"publisher","first-page":"104003","DOI":"10.1088\/1674-4926\/38\/10\/104003","volume":"38","author":"T Chaudhary","year":"2017","unstructured":"Chaudhary T, Khanna G (2017) Analysis and impact of process variability on performance of junctionless double gate VeSFET. J Semicond 38(10):104003. https:\/\/doi.org\/10.1088\/1674-4926\/38\/10\/104003","journal-title":"J Semicond"},{"issue":"9","key":"11387_CR23","doi-asserted-by":"publisher","first-page":"2903","DOI":"10.1109\/TED.2011.2159608","volume":"58","author":"E Gnani","year":"2011","unstructured":"Gnani E, Gnudi A, Reggiani S, Baccarani G (2011) Theory of the junctionless nanowire FET. IEEE Trans Electron Devices 58(9):2903\u20132910. https:\/\/doi.org\/10.1109\/TED.2011.2159608","journal-title":"IEEE Trans Electron Devices"},{"key":"11387_CR24","doi-asserted-by":"publisher","unstructured":"Lv Y, Chen H, Wang Q, Li X, Xie C, Song Z (2022) Postsilicon nanoelectronic device and its application in braininspired chips. Frontiers in Neurorobotics 16:948386. https:\/\/doi.org\/10.3389\/fnbot.2022.948386","DOI":"10.3389\/fnbot.2022.948386"},{"key":"11387_CR25","doi-asserted-by":"crossref","unstructured":"Sahay S, Kumar MJ (2019) Device architectures to mitigate challenges in junctionless field-effect transistors, Wiley, Hoboken, pp 125\u2013172","DOI":"10.1002\/9781119523543.ch4"},{"issue":"6","key":"11387_CR26","doi-asserted-by":"publisher","first-page":"2647","DOI":"10.1109\/TED.2021.3075665","volume":"68","author":"D-R Hsieh","year":"2021","unstructured":"Hsieh D-R, Lin K-C, Lee C-C, Chao T-S (2021) Reliability of p-type Pi-gate poly-Si nanowire channel junctionless accumulation-mode FETs. IEEE Trans Electron Devices 68(6):2647\u20132652. https:\/\/doi.org\/10.1109\/TED.2021.3075665","journal-title":"IEEE Trans Electron Devices"},{"key":"11387_CR27","doi-asserted-by":"publisher","unstructured":"Khanday MA, Khanday FA, Bashir F (2023) Single SiGe transistor based energy-efficient leaky integrate-and-fire neuron for neuromorphic computing. In: Neural processing letters. https:\/\/doi.org\/10.1007\/s11063-023-11245-w","DOI":"10.1007\/s11063-023-11245-w"},{"key":"11387_CR28","unstructured":"Eshraghian JK, Ward M, Neftci E, Wang X, Lenz G, Dwivedi G, Bennamoun M, Jeong DS, Lu WD (2021) Training spiking neural networks using lessons from deep learning. arXiv preprint arXiv:2109.12894"},{"key":"11387_CR29","doi-asserted-by":"publisher","unstructured":"Khanday MA, Bashir F, Khanday FA (2022) Energy-efficient single transistor neuron for reconfigurable threshold logic and image classification. In: 2022 5th international conference on multimedia, signal processing and communication technologies (IMPACT), Aligarh, India, pp 1\u20134. https:\/\/doi.org\/10.1109\/IMPACT55510.2022.10029223","DOI":"10.1109\/IMPACT55510.2022.10029223"}],"container-title":["Neural Processing Letters"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11063-023-11387-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11063-023-11387-x\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11063-023-11387-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,11,22]],"date-time":"2023-11-22T05:17:28Z","timestamp":1700630248000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11063-023-11387-x"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,8,16]]},"references-count":29,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2023,12]]}},"alternative-id":["11387"],"URL":"https:\/\/doi.org\/10.1007\/s11063-023-11387-x","relation":{},"ISSN":["1370-4621","1573-773X"],"issn-type":[{"value":"1370-4621","type":"print"},{"value":"1573-773X","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,8,16]]},"assertion":[{"value":"1 August 2023","order":1,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"16 August 2023","order":2,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}},{"order":1,"name":"Ethics","group":{"name":"EthicsHeading","label":"Declarations"}},{"value":"The authors declare no competing interests.","order":2,"name":"Ethics","group":{"name":"EthicsHeading","label":"Conflict of interest"}}]}}