{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,12,13]],"date-time":"2025-12-13T23:04:14Z","timestamp":1765667054188},"reference-count":14,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2013,6,18]],"date-time":"2013-06-18T00:00:00Z","timestamp":1371513600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["J Sign Process Syst"],"published-print":{"date-parts":[[2014,6]]},"DOI":"10.1007\/s11265-013-0789-4","type":"journal-article","created":{"date-parts":[[2013,6,17]],"date-time":"2013-06-17T06:26:32Z","timestamp":1371450392000},"page":"209-216","source":"Crossref","is-referenced-by-count":9,"title":["Implementation of Six Bit ADC and DAC Using Quantum Dot Gate Non-Volatile Memory"],"prefix":"10.1007","volume":"75","author":[{"given":"Supriya","family":"Karmakar","sequence":"first","affiliation":[]},{"given":"John A.","family":"Chandy","sequence":"additional","affiliation":[]},{"given":"Faquir C.","family":"Jain","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2013,6,18]]},"reference":[{"key":"789_CR1","doi-asserted-by":"crossref","first-page":"e18","DOI":"10.1038\/am.2012.32","volume":"4","author":"TW Kim","year":"2012","unstructured":"Kim, T. W., Yang, Y., Li, F., & Kwan, W. L. (2012). Electrical memory devices based on inorganic\/organic nanocomposites. NPG Asia Materials, 4, e18. doi: 10.1038\/am.2012.32 .","journal-title":"NPG Asia Materials"},{"key":"789_CR2","unstructured":"Ho, Y., Huang, G. M., Li, P. (2009). \u201cNonvolatile memristor memory; device characteristics and design implications\u201d. In The Proceedings of International Conference on Computer-Aided Design (ICCAD)."},{"issue":"3","key":"789_CR3","doi-asserted-by":"crossref","first-page":"341","DOI":"10.1021\/cm102006v","volume":"23","author":"P Heremans","year":"2011","unstructured":"Heremans, P., Gelinck, G. H., Muller, R., Baeg, K.-J., Kim, D.-Y., & Noh, Y.-Y. (2011). Polymer and organic nonvolatile memory devices. Chemistry of Materials, 23(3), 341\u2013358.","journal-title":"Chemistry of Materials"},{"key":"789_CR4","doi-asserted-by":"crossref","first-page":"918","DOI":"10.1038\/nmat1269","volume":"3","author":"J Ouyang","year":"2004","unstructured":"Ouyang, J., Chu, C.-W., Szmanda, C. R., Ma, L., & Yang, Y. (2004). Programmable polymer thin film and non-volatile memory device. Nature Materials, 3, 918\u2013922. doi: 10.1038\/nmat1269 .","journal-title":"Nature Materials"},{"key":"789_CR5","doi-asserted-by":"crossref","first-page":"105202","DOI":"10.1088\/0957-4484\/23\/10\/105202","volume":"23","author":"Y Ji","year":"2012","unstructured":"Ji, Y., Choe, M., Cho, B., Song, S., Yoon, J., Ko, H. C., & Lee, T. (2012). Organic nonvolatile memory devices with charge trapping multilayer grapheme film. Nanotechnology, 23, 105202. doi: 10.1088\/0957-4484\/23\/10\/105202 .","journal-title":"Nanotechnology"},{"issue":"7\u20139","key":"789_CR6","doi-asserted-by":"crossref","first-page":"1925","DOI":"10.1016\/j.mee.2009.03.132","volume":"86","author":"R Waser","year":"2009","unstructured":"Waser, R. (2009). Resistive non-volatile memory devices. Microelectronic Engineering, 86(7\u20139), 1925\u20131928.","journal-title":"Microelectronic Engineering"},{"issue":"8","key":"789_CR7","doi-asserted-by":"crossref","first-page":"1574","DOI":"10.1007\/s11664-009-0755-x","volume":"38","author":"FC Jain","year":"2009","unstructured":"Jain, F. C., Suarez, E., Gogna, M., AlAmoody, F., Butkiewicus, D., Hohner, R., Liaskas, T., Karmakar, S., Chan, P. Y., Miller, B., Chandy, J., & Heller, E. (2009). Novel quantum dot gate FETs and nonvolatile memories using lattice-matched II\u2013VI gate insulators. Journal of Electronic Materials, 38(8), 1574\u20131578.","journal-title":"Journal of Electronic Materials"},{"issue":"7","key":"789_CR8","doi-asserted-by":"crossref","first-page":"903","DOI":"10.1007\/s11664-010-1207-3","volume":"39","author":"E Suarez","year":"2010","unstructured":"Suarez, E., Gogna, M., Al-Amoody, F., Karmakar, S., Ayers, J., Heller, E., & Jain, F. (2010). Nonvolatile memories using Quantum Dot (QD) floating gate assembled on II\u2013VI tunnel insulator. Journal of Electronic Materials, 39(7), 903\u2013907.","journal-title":"Journal of Electronic Materials"},{"key":"789_CR9","unstructured":"Gogna, M., Karmakar, S., Al-Amoody, F., Papadimitrakopoulos, F., Jain, F. (Sept. 2009). \u201cSelf-assembled germanium oxide cladded germanium quantum dot gate nonvolatile memory\u201d. In Proceedings of 2009 Nanoelectronic Devices for Defense and Security."},{"issue":"8","key":"789_CR10","doi-asserted-by":"crossref","first-page":"2184","DOI":"10.1007\/s11664-012-2116-4","volume":"41","author":"S Karmakar","year":"2012","unstructured":"Karmakar, S., Chandy, J. A., Gogna, M., & Jain, F. C. (2012). Fabrication and circuit modeling of NMOS inverter based on quantum dot gate field effect transistors. Journal of Electronic Materials, 41(8), 2184\u20132192. doi: 10.1007\/s11664-012-2116-4 .","journal-title":"Journal of Electronic Materials"},{"issue":"3","key":"789_CR11","doi-asserted-by":"crossref","first-page":"522","DOI":"10.1021\/cm9800579","volume":"11","author":"F Papadimitrakopoulos","year":"1999","unstructured":"Papadimitrakopoulos, F., Phely-Bobin, T., & Wisniecki, P. (1999). Self-assembled nanosilicon\/siloxane composite films. Chemistry of Materials, 11(3), 522\u2013525.","journal-title":"Chemistry of Materials"},{"issue":"3","key":"789_CR12","doi-asserted-by":"crossref","first-page":"1030","DOI":"10.1021\/cm010362l","volume":"14","author":"T Phely-Bobin","year":"2002","unstructured":"Phely-Bobin, T., Chattopadhyay, D., & Papadimitrakopoulos, F. (2002). Characterization of mechanically attrited Si\/SiOx nanoparticles and their self-assembled composite films. Chemistry of Materials, 14(3), 1030\u20131036.","journal-title":"Chemistry of Materials"},{"key":"789_CR13","doi-asserted-by":"crossref","first-page":"2055","DOI":"10.1016\/j.sse.2004.05.073","volume":"48","author":"E-S Hasaneen","year":"2004","unstructured":"Hasaneen, E.-S., Heller, E., Bansal, R., Huang, W., & Jain, F. (2004). Modeling of nonvolatile floating gate quantum dot memory. Solid State Electronics, 48, 2055.","journal-title":"Solid State Electronics"},{"key":"789_CR14","unstructured":"Heller, E., Islam, S., Zhao, G., Jain, F. (1999). \u201cAnalysis of In0.52Al0.48As\/In0.53Ga0.47As\/InP quantum wire MODFETs employing coupled well channels\u201d. Solid-State Electronics, 901."}],"container-title":["Journal of Signal Processing Systems"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11265-013-0789-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11265-013-0789-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11265-013-0789-4","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T12:22:22Z","timestamp":1559391742000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11265-013-0789-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,6,18]]},"references-count":14,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2014,6]]}},"alternative-id":["789"],"URL":"https:\/\/doi.org\/10.1007\/s11265-013-0789-4","relation":{},"ISSN":["1939-8018","1939-8115"],"issn-type":[{"value":"1939-8018","type":"print"},{"value":"1939-8115","type":"electronic"}],"subject":[],"published":{"date-parts":[[2013,6,18]]}}}