{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,1,31]],"date-time":"2025-01-31T05:18:33Z","timestamp":1738300713907,"version":"3.35.0"},"reference-count":25,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2008,6,18]],"date-time":"2008-06-18T00:00:00Z","timestamp":1213747200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci. China Ser. F-Inf. Sci."],"published-print":{"date-parts":[[2008,8]]},"DOI":"10.1007\/s11432-008-0037-x","type":"journal-article","created":{"date-parts":[[2008,6,18]],"date-time":"2008-06-18T16:40:41Z","timestamp":1213807241000},"page":"1184-1192","source":"Crossref","is-referenced-by-count":5,"title":["Improved empirical DC I\u2013V model for 4H-SiC MESFETs"],"prefix":"10.1007","volume":"51","author":[{"given":"QuanJun","family":"Cao","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YiMen","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YuMing","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"HongLiang","family":"Lv","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YueHu","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"XiaoYan","family":"Tang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hui","family":"Guo","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2008,6,18]]},"reference":[{"issue":"10","key":"37_CR1","doi-asserted-by":"crossref","first-page":"1732","DOI":"10.1109\/16.536819","volume":"43","author":"C. E. Weitzel","year":"1996","unstructured":"Weitzel C E, Palmour J W, Jr Carter C H, et al. Silicon carbide high-power devices. IEEE Trans Electr Dev, 1996, 43(10): 1732\u20131741","journal-title":"IEEE Trans Electr Dev"},{"issue":"7","key":"37_CR2","doi-asserted-by":"crossref","first-page":"573","DOI":"10.1109\/LED.2006.877285","volume":"27","author":"K. Andersson","year":"2006","unstructured":"Andersson K, Sudow M, Nilsson P-A, et al. Fabrication and characterization of field-plated buried-gate SiC MESFETs. IEEE Electr Dev Lett, 2006, 27(7): 573\u2013575","journal-title":"IEEE Electr Dev Lett"},{"issue":"6","key":"37_CR3","doi-asserted-by":"crossref","first-page":"839","DOI":"10.1109\/TED.2004.828279","volume":"51","author":"H. G. Henry","year":"2004","unstructured":"Henry H G, Augustine G, DeSalvo G C, et al. S-band operation of SiC power MESFET with 20 W (4.4 W\/mm) output power and 60% PAE. IEEE Trans ED, 2004, 51(6): 839\u2013845","journal-title":"IEEE Trans ED"},{"key":"37_CR4","doi-asserted-by":"crossref","unstructured":"Chen P, Chang H R, Li X, et al. Design and fabrication of SiC MESFET transistor and broadband power amplifier for RF applications. In: 16th Intern Symposium on Power Semiconductor Devices and ICs, 24\u201327 May 2004. 317\u2013318","DOI":"10.1109\/WCT.2004.240036"},{"key":"37_CR5","doi-asserted-by":"crossref","unstructured":"Sadler R A, Allen S T, Alcorn T S, et al. SiC MESFET with output power of 50 watts CW at S-band. In: 56th Device Res Conf Digest, 22\u201324 June 1998. 92\u201393","DOI":"10.1109\/DRC.1998.731135"},{"issue":"7","key":"37_CR6","doi-asserted-by":"crossref","first-page":"2441","DOI":"10.1109\/TMTT.2005.850404","volume":"53","author":"A. Sayed","year":"2005","unstructured":"Sayed A, Boeck G. Two-stage ultrawide-band 5-W power amplifier using SiC MESFET. IEEE Trans Microwave Theor Tech, 2005, 53(7): 2441\u20132449","journal-title":"IEEE Trans Microwave Theor Tech"},{"issue":"12","key":"37_CR7","doi-asserted-by":"crossref","first-page":"4072","DOI":"10.1109\/TMTT.2006.885563","volume":"54","author":"M. Sudow","year":"2006","unstructured":"Sudow M, Andersson K, Billstrom N, et al. A SiC MESFET-Based MMIC Process. IEEE Trans Microwave Theor Tech, 2006, 54(12): 4072\u20134078","journal-title":"IEEE Trans Microwave Theor Tech"},{"key":"37_CR8","doi-asserted-by":"crossref","unstructured":"Sadler R A, Allen S T, Pribble W L, et al. SiC MESFET hybrid amplifier with 30-W output power at 10 GHz. High Performance Devices, 2000. In: Proceedings 2000 IEEE\/Cornell Conference on 7\u20139 Aug. 2000. 173\u2013177","DOI":"10.1109\/CORNEL.2000.902535"},{"issue":"3","key":"37_CR9","doi-asserted-by":"crossref","first-page":"584","DOI":"10.1109\/16.748881","volume":"46","author":"D. Siriex","year":"1999","unstructured":"Siriex D, Noblanc O, Barataud D, et al. A CAD-oriented nonlinear model of SiC MESFET based on pulsed I(V) pulsed, S-parameters measurements. IEEE Trans ED, 1999, 46(3): 584\u2013588","journal-title":"IEEE Trans ED"},{"issue":"12","key":"37_CR10","doi-asserted-by":"crossref","first-page":"2350","DOI":"10.1109\/22.808981","volume":"47","author":"I. Angelov","year":"1999","unstructured":"Angelov I, Rorsman N, Stenarson J, et al. An empirical table based FET model. IEEE Trans Microwave Theory Tech, 1999, 47(12): 2350\u20132357","journal-title":"IEEE Trans Microwave Theory Tech"},{"issue":"1","key":"37_CR11","first-page":"6","volume":"83","author":"C. L. Zhu","year":"2006","unstructured":"Zhu C L, Tin Rusli C C, Yoon S F, et al. A three-region analytical model for short-channel SiC MESFETs. Microelectr Eng, 2006, 83(1): 6\u201399","journal-title":"Microelectr Eng"},{"issue":"7","key":"37_CR12","doi-asserted-by":"crossref","first-page":"1206","DOI":"10.1016\/j.sse.2005.04.002","volume":"47","author":"S. K. Aggarwal","year":"2005","unstructured":"Aggarwal S K, Gupta R, Haldar S, et al. A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region. Solid-State Electr, 2005, 47(7): 1206\u20131212","journal-title":"Solid-State Electr"},{"issue":"9","key":"37_CR13","first-page":"1160","volume":"22","author":"L. A. Yang","year":"2001","unstructured":"Yang L A, Zhang Y M, Lv H L, et al. Analytical model of large-signal DC-IV characteristics 4H-SiC RF power MESFET\u2019s. Chinese J Semicond (in Chinese), 2001, 22(9): 1160\u20131164","journal-title":"Chinese J Semicond (in Chinese)"},{"key":"37_CR14","doi-asserted-by":"crossref","unstructured":"Mukherjee S S, Islam S S, Bowman R J. An analytical model for SiC MESFET incorporating trapping and thermal effects. Solid-State Electr, 2004, 48(10\u201311), SPEC ISS: 1709\u20131715","DOI":"10.1016\/j.sse.2004.05.004"},{"key":"37_CR15","doi-asserted-by":"crossref","unstructured":"Murray S P, Roenker K P. An analytical model for SiC MESFETs. In: Intern Semicond Device Res Symposium, 5\u20137 Dec, 2001. 195\u2013198","DOI":"10.1109\/ISDRS.2001.984473"},{"issue":"7","key":"37_CR16","doi-asserted-by":"crossref","first-page":"1065","DOI":"10.1109\/TED.2004.829859","volume":"51","author":"H. L. Lv","year":"2004","unstructured":"Lv H L, Zhang Y M, Zhang Y M, et al. Analytic model of I-V Characteristics of 4H-SiC MESFETs based on multiparameter mobility model. IEEE Trans ED, 2004, 51(7): 1065\u20131068","journal-title":"IEEE Trans ED"},{"key":"37_CR17","doi-asserted-by":"crossref","unstructured":"Manohar S, Pham A, Nicole E. Development of an empirical large signal model for SiC MESFETs. In: 59th ARFTG Conf Digest, Spring June 7, 2002. 23\u201329","DOI":"10.1109\/ARFTGS.2002.1214676"},{"key":"37_CR18","unstructured":"Ahmed S, Georg B. An enhanced empirical large signal model of SiC MESFETs for power applications. IEEE 2005 SBMO\/IEEE MTT-S Intern Conf Microwave and Optoelectr, July, 2005. 28\u201331"},{"issue":"4","key":"37_CR19","doi-asserted-by":"crossref","first-page":"1097","DOI":"10.1088\/1009-1963\/16\/4\/039","volume":"16","author":"Q. J. Cao","year":"2007","unstructured":"Cao Q J, Zhang Y M, Zhang Y M. A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs. Chinese Phys, 2007, 16(4): 1097\u20131100","journal-title":"Chinese Phys"},{"issue":"2","key":"37_CR20","doi-asserted-by":"crossref","first-page":"129","DOI":"10.1109\/TMTT.1985.1132960","volume":"33","author":"A. Materka","year":"1985","unstructured":"Materka A, Kacprzak T. Computer calculation of large-signal GaAs FET amplifier characteristics. IEEE Trans Microwave Theory Tech, 1985, 33(2): 129\u2013135","journal-title":"IEEE Trans Microwave Theory Tech"},{"key":"37_CR21","volume-title":"Nonlinear Regression Analysis and its Application","author":"M. B. Douglas","year":"1988","unstructured":"Douglas M B, Donald G W. Nonlinear Regression Analysis and its Application. New York: John Wiley & Sons Inc, 1988"},{"issue":"5","key":"37_CR22","doi-asserted-by":"crossref","first-page":"448","DOI":"10.1109\/TMTT.1980.1130099","volume":"28","author":"W. R. Curtice","year":"1980","unstructured":"Curtice W R. A MESFET model for use in the design of GaAs integrated circuits. IEEE Trans Microwave Theory Tech, 1980, 28(5): 448\u2013456","journal-title":"IEEE Trans Microwave Theory Tech"},{"issue":"2","key":"37_CR23","doi-asserted-by":"crossref","first-page":"211","DOI":"10.1109\/JSSC.1983.1051924","volume":"18","author":"T. Kacprzak","year":"1983","unstructured":"Kacprzak T, Materka A. Compact DC model of GaAs FETs for large-signal computer calculation. Solid-State Circ, IEEE J, 1983, 18(2): 211\u2013213","journal-title":"Solid-State Circ, IEEE J"},{"issue":"2","key":"37_CR24","first-page":"160","volume":"34","author":"H. Statz","year":"1987","unstructured":"Statz H, Newman P, Smith I W, et al. GaAs FET device and circuit simulation in SPICE. IEEE Trans Microwave Theory Tech, 1987, 34(2): 160\u2013169","journal-title":"IEEE Trans Microwave Theory Tech"},{"issue":"5","key":"37_CR25","doi-asserted-by":"crossref","first-page":"556","DOI":"10.1109\/22.763155","volume":"47","author":"R. B. Hallgren","year":"1999","unstructured":"Hallgren R B, Litzenberg P H. TOM3 capacitance model: linking large-and small-signal MESFET models in SPICE. IEEE Trans Microwave Theory Tech, 1999, 47(5): 556\u2013561","journal-title":"IEEE Trans Microwave Theory Tech"}],"container-title":["Science in China Series F: Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-008-0037-x.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-008-0037-x\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-008-0037-x","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,1,30]],"date-time":"2025-01-30T18:46:56Z","timestamp":1738262816000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-008-0037-x"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,6,18]]},"references-count":25,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2008,8]]}},"alternative-id":["37"],"URL":"https:\/\/doi.org\/10.1007\/s11432-008-0037-x","relation":{},"ISSN":["1009-2757","1862-2836"],"issn-type":[{"type":"print","value":"1009-2757"},{"type":"electronic","value":"1862-2836"}],"subject":[],"published":{"date-parts":[[2008,6,18]]}}}