{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,8,27]],"date-time":"2026-08-27T00:03:01Z","timestamp":1787788981569,"version":"build-2784847793"},"reference-count":24,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2008,5,21]],"date-time":"2008-05-21T00:00:00Z","timestamp":1211328000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci. China Ser. F-Inf. Sci."],"published-print":{"date-parts":[[2008,6]]},"DOI":"10.1007\/s11432-008-0056-7","type":"journal-article","created":{"date-parts":[[2008,5,20]],"date-time":"2008-05-20T10:41:12Z","timestamp":1211280072000},"page":"780-789","source":"Crossref","is-referenced-by-count":39,"title":["The mobility of two-dimensional electron gas in AlGaN\/GaN heterostructures with varied Al content"],"prefix":"10.1007","volume":"51","author":[{"given":"JinFeng","family":"Zhang","sequence":"first","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"JinCheng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]},{"given":"JinYu","family":"Ni","sequence":"additional","affiliation":[],"role":[{"vocabulary":"crossref","role":"author"}]}],"member":"297","published-online":{"date-parts":[[2008,5,21]]},"reference":[{"key":"56_CR1","doi-asserted-by":"crossref","first-page":"4520","DOI":"10.1063\/1.371396","volume":"86","author":"I. P. Smorchkova","year":"1999","unstructured":"Smorchkova I P, Elsass C R, Ibbetson J P, et al. Polarization-induced charge and electron mobility in AlGaN\/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy. J Appl Phys, 1999, 86: 4520\u20134526","journal-title":"J Appl Phys"},{"key":"56_CR2","doi-asserted-by":"crossref","first-page":"3222","DOI":"10.1063\/1.369664","volume":"85","author":"O. Ambacher","year":"1999","unstructured":"Ambacher O, Smart J, Shealy J R, et al. Two-dimensional gases induced by spontaneous and piezoelectric polarization charges in N-and Ga-face AlGaN\/GaN heterostructures. J Appl Phys, 1999, 85: 3222\u20133233","journal-title":"J Appl Phys"},{"key":"56_CR3","doi-asserted-by":"crossref","first-page":"334","DOI":"10.1063\/1.371866","volume":"87","author":"O. Ambacher","year":"2000","unstructured":"Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN\/GaN heterostructures. J Appl Phys, 2000, 87: 334\u2013344","journal-title":"J Appl Phys"},{"key":"56_CR4","doi-asserted-by":"crossref","first-page":"5850","DOI":"10.1063\/1.371602","volume":"86","author":"S. Keller","year":"1999","unstructured":"Keller S, Parish G, Fini P T, et al. Metalorganic chemical vapor deposition of high mobility AlGaN\/GaN heterostructures. J Appl Phys, 1999, 86: 5850\u20135857","journal-title":"J Appl Phys"},{"key":"56_CR5","doi-asserted-by":"crossref","first-page":"50","DOI":"10.1109\/55.658600","volume":"19","author":"Y.-F. Wu","year":"1998","unstructured":"Wu Y-F, Keller B P, Fini P, et al. High Al-content AlGaN\/GaN MODFET\u2019s for ultrahigh performance. IEEE Elect Dev Lett, 1998, 19: 50\u201353","journal-title":"IEEE Elect Dev Lett"},{"key":"56_CR6","doi-asserted-by":"crossref","first-page":"888","DOI":"10.1116\/1.1556398","volume":"21","author":"S. Arulkumaran","year":"2003","unstructured":"Arulkumaran S, Egawa T, Ishikawa H, et al. Characterization of different-Al-content AlxGal-xN\/GaN heterostructures and high-electron-mobility transistors on sapphire. J Vac Sci Tech B, 2003, 21: 888\u2013894","journal-title":"J Vac Sci Tech B"},{"key":"56_CR7","doi-asserted-by":"crossref","first-page":"293","DOI":"10.1016\/j.jcrysgro.2004.08.117","volume":"272","author":"M. Miyoshi","year":"2004","unstructured":"Miyoshi M, Sakai M, Ishikawa H, et al. MOVPE growth and characterization of high-Al-content AlGaN\/GaN heterostructures on 100-mm-diameter sapphire substrates. J Cryst Growth, 2004, 272: 293\u2013299","journal-title":"J Cryst Growth"},{"key":"56_CR8","doi-asserted-by":"crossref","first-page":"1527","DOI":"10.1116\/1.1993619","volume":"23","author":"M. Miyoshi","year":"2005","unstructured":"Miyoshi M, Egawa T, Ishikawa H. Structural characterization of strained AlGaN layers in different Al content AlGaN\/GaN heterostructures and its effect on two-dimensional electron transport properties. J Vac Sci Tech B, 2005, 23: 1527\u20131531","journal-title":"J Vac Sci Tech B"},{"key":"56_CR9","doi-asserted-by":"crossref","first-page":"797","DOI":"10.1103\/PhysRevLett.16.797","volume":"16","author":"F. F. Fang","year":"1966","unstructured":"Fang F F, Howard W E. Negative field-effect mobility on (100) Si surfaces. Phys Rev Lett, 1966, 16: 797\u2013799","journal-title":"Phys Rev Lett"},{"key":"56_CR10","volume-title":"The Physics of Low Dimensional Semiconductor","author":"J. H. Davies","year":"1998","unstructured":"Davies J H. The Physics of Low Dimensional Semiconductor. Cambridge UK: Cambridge University Press, 1998"},{"key":"56_CR11","doi-asserted-by":"crossref","first-page":"427","DOI":"10.1088\/0268-1242\/19\/3\/024","volume":"19","author":"D. Zanato","year":"2004","unstructured":"Zanato D, Gokden S, Balkan N, et al. The effect of interface-roughness and dislocation scattering on low temperature mobility of 2D electron gas in GaN\/AlGaN. Semicond Sci Tech, 2004, 19: 427\u2013432","journal-title":"Semicond Sci Tech"},{"key":"56_CR12","doi-asserted-by":"crossref","first-page":"657","DOI":"10.1063\/1.359051","volume":"77","author":"B. L. Gelmont","year":"1995","unstructured":"Gelmont B L, Shur M, Stroscio M. Polar optical-phonon scattering in three-and two-dimensional electron gases. J Appl Phys, 1995, 77: 657\u2013660","journal-title":"J Appl Phys"},{"key":"56_CR13","doi-asserted-by":"crossref","first-page":"591","DOI":"10.1063\/1.94435","volume":"43","author":"G. Bastard","year":"1983","unstructured":"Bastard G. Energy levels and alloy scattering in InP-In(Ga)As heterojunctions. Appl Phys Lett, 1983, 43: 591\u2013593","journal-title":"Appl Phys Lett"},{"key":"56_CR14","volume-title":"Transport in Nanostructures","author":"D. K. Ferry","year":"1999","unstructured":"Ferry D K, Goodnick S M. Transport in Nanostructures. Cambridge UK: Cambridge University Press, 1999"},{"key":"56_CR15","doi-asserted-by":"crossref","first-page":"1707","DOI":"10.1063\/1.126143","volume":"76","author":"D. Jena","year":"2000","unstructured":"Jena D, Gossard A C, Mishra U K. Dislocation scattering in a two-dimensional electron gas. Appl Phys Lett, 2000, 76: 1707\u20131709","journal-title":"Appl Phys Lett"},{"key":"56_CR16","volume-title":"Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe","author":"M. E. Levinshtein","year":"2001","unstructured":"Levinshtein M E, Rumyantsev S L, Shur M S. Properties of advanced semiconductor materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley & Sons, 2001"},{"key":"56_CR17","doi-asserted-by":"crossref","first-page":"2123","DOI":"10.1063\/1.118967","volume":"70","author":"W. Knap","year":"1997","unstructured":"Knap W, Contreras S, Alause H, et al. Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN\/AlGaN interface. Appl Phys Lett, 1997, 70: 2123\u20132125","journal-title":"Appl Phys Lett"},{"key":"56_CR18","volume-title":"Polarization induced electron populations in III\u2013V nitride semiconductors: Transport, growth, and device applications","author":"D. Jena","year":"2003","unstructured":"Jena D. Polarization induced electron populations in III\u2013V nitride semiconductors: Transport, growth, and device applications. phD thesis. Santa Barbara USA: University of California, Santa Barbara, 2003"},{"key":"56_CR19","doi-asserted-by":"crossref","first-page":"2495","DOI":"10.1063\/1.123018","volume":"74","author":"K. Leung","year":"1999","unstructured":"Leung K, Wright A F, Stechel E B. Charge accumulation at a threading edge dislocation in gallium nitride. Appl Phys Lett, 1999, 74: 2495\u20132497","journal-title":"Appl Phys Lett"},{"key":"56_CR20","doi-asserted-by":"crossref","first-page":"3531","DOI":"10.1063\/1.124151","volume":"74","author":"T. Wang","year":"1999","unstructured":"Wang T, Ohno Y, Lachab M, et al. Electron mobility exceeding 104 cm2\/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate. Appl Phys Lett, 1999, 74: 3531\u20133533","journal-title":"Appl Phys Lett"},{"key":"56_CR21","doi-asserted-by":"crossref","first-page":"2322","DOI":"10.1116\/1.1306298","volume":"18","author":"Y. F. Zhang","year":"2000","unstructured":"Zhang Y F, Smorchkova Y, Elsass C, et al. Polarization effects and transport in AlGaN\/GaN system. J Vac Sci Tech B, 2000, 18: 2322\u20132327","journal-title":"J Vac Sci Tech B"},{"key":"56_CR22","doi-asserted-by":"crossref","first-page":"617","DOI":"10.1002\/1521-3951(200111)228:2<617::AID-PSSB617>3.0.CO;2-E","volume":"228","author":"D. Jena","year":"2001","unstructured":"Jena D, Smorchkova I P, Gossard A C, et al. Electron transport in III\u2013V nitride two-dimensional electron gases. Phys Stat Sol (b), 2001, 228: 617\u2013619","journal-title":"Phys Stat Sol (b)"},{"key":"56_CR23","doi-asserted-by":"crossref","first-page":"818","DOI":"10.1063\/1.122011","volume":"73","author":"R. Oberhuber","year":"1998","unstructured":"Oberhuber R, Zandler G, Vogl P. Mobility of two-dimensional electrons in AlGaN\/GaN modulation-doped field-effect transistors. Appl Phys Lett, 1998, 73: 818\u2013820","journal-title":"Appl Phys Lett"},{"key":"56_CR24","volume-title":"Transport properties of the two-dimensional electron gas in AlxGal-xN\/GaN heterostructures","author":"N. Tang","year":"2007","unstructured":"Tang N. Transport properties of the two-dimensional electron gas in AlxGal-xN\/GaN heterostructures. phD thesis. Beijing: Peking University, 2007"}],"container-title":["Science in China Series F: Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-008-0056-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-008-0056-7\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-008-0056-7","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T11:35:55Z","timestamp":1559388955000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-008-0056-7"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2008,5,21]]},"references-count":24,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2008,6]]}},"alternative-id":["56"],"URL":"https:\/\/doi.org\/10.1007\/s11432-008-0056-7","relation":{},"ISSN":["1009-2757","1862-2836"],"issn-type":[{"value":"1009-2757","type":"print"},{"value":"1862-2836","type":"electronic"}],"subject":[],"published":{"date-parts":[[2008,5,21]]}}}