{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,10,26]],"date-time":"2025-10-26T21:05:14Z","timestamp":1761512714063},"reference-count":16,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2009,8,1]],"date-time":"2009-08-01T00:00:00Z","timestamp":1249084800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci. China Ser. F-Inf. Sci."],"published-print":{"date-parts":[[2009,8]]},"DOI":"10.1007\/s11432-009-0048-2","type":"journal-article","created":{"date-parts":[[2009,8,7]],"date-time":"2009-08-07T11:31:00Z","timestamp":1249644660000},"page":"1476-1482","source":"Crossref","is-referenced-by-count":3,"title":["Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes"],"prefix":"10.1007","volume":"52","author":[{"given":"XiaoLi","family":"Da","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"GuangDi","family":"Shen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chen","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"DeShu","family":"Zou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YanXu","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jia","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2009,8,8]]},"reference":[{"issue":"12","key":"48_CR1","doi-asserted-by":"crossref","first-page":"124003","DOI":"10.1117\/1.2131071","volume":"44","author":"Y. Uchida","year":"2005","unstructured":"Uchida Y, Taguchi T. Lighting theory and luminous characteristics of white light-emitting diodes. Opt Eng, 2005, 44(12): 124003\u20131-9","journal-title":"Opt Eng"},{"issue":"11","key":"48_CR2","doi-asserted-by":"crossref","first-page":"111307","DOI":"10.1117\/1.2128635","volume":"44","author":"C. H. You","year":"2005","unstructured":"You C H. Visual equivalence of light-emitting diode white light. Opt Eng, 2005, 44(11): 111307\u20131-7","journal-title":"Opt Eng"},{"issue":"1","key":"48_CR3","doi-asserted-by":"crossref","first-page":"331","DOI":"10.1002\/1521-396X(200003)178:1<331::AID-PSSA331>3.0.CO;2-9","volume":"178","author":"Y. Kawakami","year":"2000","unstructured":"Kawakami Y, Narukawa Y, Omae K, et al. Dimensionality of excitons in InGaN-based light emitting devices. Phys Status Solid A, 2000 178(1): 331\u2013336","journal-title":"Phys Status Solid A"},{"key":"48_CR4","doi-asserted-by":"crossref","first-page":"2248","DOI":"10.1063\/1.1497467","volume":"92","author":"C. Huh","year":"2002","unstructured":"Huh C, Lee J M, Kim D J, et al. Improvement in light-output efficiency of InGaN\/GaN multiple-quantumwell light-emitting diodes by current blocking layer. J Appl Phys, 2002, 92: 2248\u20132250","journal-title":"J Appl Phys"},{"issue":"11","key":"48_CR5","doi-asserted-by":"crossref","first-page":"9383","DOI":"10.1063\/1.1571962","volume":"93","author":"C. Huh","year":"2003","unstructured":"Huh C, Lee K S, Kang E J, et al. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of the p-GaN surface. J Appl Phys, 2003, 93(11): 9383\u20139385","journal-title":"J Appl Phys"},{"issue":"12","key":"48_CR6","doi-asserted-by":"crossref","first-page":"G327","DOI":"10.1149\/1.2076987","volume":"8","author":"E. J. Kang","year":"2005","unstructured":"Kang E J, Huh C, Lee S H, et al. Improvement in light-output power of InGaN\/GaN LED by formation of nanosize cavities on p-GaN surface. Electrochem Solid-State Lett, 2005, 8(12): G327\u2013G329","journal-title":"Electrochem Solid-State Lett"},{"issue":"6","key":"48_CR7","doi-asserted-by":"crossref","first-page":"855","DOI":"10.1063\/1.1645992","volume":"84","author":"T. Fujii","year":"2004","unstructured":"Fujii T, Gao Y, Sharma R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening. Appl Phys Lett, 2004, 84(6): 855\u2013857","journal-title":"Appl Phys Lett"},{"issue":"3","key":"48_CR8","doi-asserted-by":"crossref","first-page":"508","DOI":"10.1016\/j.sse.2006.02.005","volume":"50","author":"X. L. Da","year":"2006","unstructured":"Da X L, Guo X, Dong L M, et al. The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes. Solid-State Electr, 2006, 50(3): 508\u2013510","journal-title":"Solid-State Electr"},{"issue":"16","key":"48_CR9","doi-asserted-by":"crossref","first-page":"2367","DOI":"10.1063\/1.125016","volume":"75","author":"M. R. Krames","year":"1999","unstructured":"Krames M R, Ochiai-Holcomb M, Hofler G E, et al. High-power truncated-inverted-pyramid (AlxGa1-x )0.5In0.5 P\/GaP light-emitting diodes exhibiting >50% external quantum efficiency. Appl Phys Lett, 1999, 75(16): 2367\u20132365","journal-title":"Appl Phys Lett"},{"key":"48_CR10","first-page":"13","volume-title":"Thin Film Optics and Technology (in Chinese)","author":"J. F. Tang","year":"1987","unstructured":"Tang J F, Gu P F. Thin Film Optics and Technology (in Chinese). Beijing: Mechanical Industry Publication, 1987. 13\u201324"},{"issue":"11","key":"48_CR11","doi-asserted-by":"crossref","first-page":"7667","DOI":"10.1063\/1.373438","volume":"87","author":"J. M. Lee","year":"2000","unstructured":"Lee J M, Chang K M, Kim S W, et al. Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma. J Appl Phys, 2000, 87(11): 7667\u20137670","journal-title":"J Appl Phys"},{"key":"48_CR12","doi-asserted-by":"crossref","first-page":"102104","DOI":"10.1063\/1.1882749","volume":"86","author":"H. S. Yang","year":"2005","unstructured":"Yang H S, Han S Y, Balk K H, et al. Effect of inductively coupled plasma damage on performance of GaN-InGaN multiquantum-well light-emitting diodes. Appl Phys Lett, 2005, 86: 102104\u20131-3","journal-title":"Appl Phys Lett"},{"key":"48_CR13","doi-asserted-by":"crossref","first-page":"1189","DOI":"10.1063\/1.1491585","volume":"92","author":"Y. B. Hahn","year":"2002","unstructured":"Hahn Y B, Choi R J, Hong J H, et al. High-density plasma-induced etch damage of InGaN\/GaN multiple quantum well light-emitting diodes. J Appl Phys, 2002, 92: 1189\u20131194","journal-title":"J Appl Phys"},{"issue":"10","key":"48_CR14","doi-asserted-by":"crossref","first-page":"1743","DOI":"10.1016\/0038-1101(95)00007-G","volume":"38","author":"A. Y. Polyakov","year":"1995","unstructured":"Polyakov A Y, Milnes A G, Li X L, et al. Hydrogen and nitrogen plasma treatment effects on surface properties of GaSB and InGaAsSb. Solid-State Electr, 1995, 38(10): 1743\u20131745","journal-title":"Solid-State Electr"},{"issue":"6","key":"48_CR15","doi-asserted-by":"crossref","first-page":"863","DOI":"10.1063\/1.1306647","volume":"77","author":"V. Adivarahan","year":"2000","unstructured":"Adivarahan V, Simin G, Yang J W, et al. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors. Appl Phys Lett, 2000, 77(6): 863\u2013865","journal-title":"Appl Phys Lett"},{"key":"48_CR16","doi-asserted-by":"crossref","first-page":"247","DOI":"10.1117\/12.452566","volume":"4776","author":"H. M. Kim","year":"2002","unstructured":"Kim H M, Huh C, Park S J. Reduction in leakage current of InGaN-based light-emitting diodes by N2O plasma passivation. Proc SPIE, 2002, 4776: 247\u2013254","journal-title":"Proc SPIE"}],"container-title":["Science in China Series F: Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-009-0048-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-009-0048-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-009-0048-2","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T15:35:58Z","timestamp":1559403358000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-009-0048-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2009,8]]},"references-count":16,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2009,8]]}},"alternative-id":["48"],"URL":"https:\/\/doi.org\/10.1007\/s11432-009-0048-2","relation":{},"ISSN":["1009-2757","1862-2836"],"issn-type":[{"value":"1009-2757","type":"print"},{"value":"1862-2836","type":"electronic"}],"subject":[],"published":{"date-parts":[[2009,8]]}}}