{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,6,15]],"date-time":"2023-06-15T11:49:33Z","timestamp":1686829773116},"reference-count":20,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2011,6,17]],"date-time":"2011-06-17T00:00:00Z","timestamp":1308268800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2011,8]]},"DOI":"10.1007\/s11432-011-4267-y","type":"journal-article","created":{"date-parts":[[2011,6,18]],"date-time":"2011-06-18T02:02:05Z","timestamp":1308362525000},"page":"1756-1761","source":"Crossref","is-referenced-by-count":1,"title":["High frequency performance of nano-scale ultra-thin-body Schottky-barrier n-MOSFETs"],"prefix":"10.1007","volume":"54","author":[{"given":"Gang","family":"Du","sequence":"first","affiliation":[]},{"given":"XiaoYan","family":"Liu","sequence":"additional","affiliation":[]},{"given":"RuQi","family":"Han","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2011,6,17]]},"reference":[{"key":"4267_CR1","first-page":"57","volume-title":"International Electron Devices Meeting Technical Digest","author":"J. Kedzierski","year":"2000","unstructured":"Kedzierski J, Xuan P Q, Anderson E H, et al. Complementary silicide source\/drain thin-body MOSFETs for the 20 nm gate length regime. International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 2000. 57\u201360"},{"key":"4267_CR2","doi-asserted-by":"crossref","first-page":"842","DOI":"10.1109\/16.662789","volume":"45","author":"C. K. Huang","year":"1998","unstructured":"Huang C K, Zhang W, Yang C. Two-dimensional numerical simulation of Schottky barrier MOSFET with channel length to 10 nm. IEEE Trans Electron Dev, 1998, 45: 842","journal-title":"IEEE Trans Electron Dev"},{"key":"4267_CR3","doi-asserted-by":"crossref","first-page":"1241","DOI":"10.1109\/16.842968","volume":"47","author":"B. Winstead","year":"2000","unstructured":"Winstead B, Ravaioli U. Simulation of Schottky barrier MOSFETs with a coupled quantum injection Monte Carlo technique. IEEE Trans Electron Dev, 2000, 47: 1241","journal-title":"IEEE Trans Electron Dev"},{"key":"4267_CR4","doi-asserted-by":"crossref","first-page":"454","DOI":"10.1063\/1.123059","volume":"74","author":"Q. Zhao","year":"1999","unstructured":"Zhao Q, Klinkhammer F, Dolle M, et al. Nanometer patterning of epitaxial CoSi2\/Si(100) for ultrashort channel Schottky barrier metal oxide semiconductor field effect transistors. Appl Phys Lett, 1999, 74: 454","journal-title":"Appl Phys Lett"},{"key":"4267_CR5","first-page":"972","volume-title":"International Electron Devices Meeting Technical Digest","author":"D. Connelly","year":"2005","unstructured":"Connelly D, Clifton P, Faulkner C, et al. Ultra-thin-body fully depleted SOI metal source\/drain n-MOSFETs and ITRS low-standby-power targets through 2018. International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 2005. 972\u2013975"},{"key":"4267_CR6","doi-asserted-by":"crossref","first-page":"1048","DOI":"10.1109\/TED.2006.871842","volume":"53","author":"J. M. Larson","year":"2006","unstructured":"Larson J M, Snyder J P. Overview and status of metal S\/D Schottky-barrier MOSFET technology. IEEE Trans Electron Dev, 2006, 53: 1048\u20131057","journal-title":"IEEE Trans Electron Dev"},{"key":"4267_CR7","doi-asserted-by":"crossref","first-page":"351","DOI":"10.1007\/s00339-007-3868-1","volume":"87","author":"J. Knoch","year":"2007","unstructured":"Knoch J, Zhang M, Appenzelle J, et al. Physics of ultrathin-body silicon-on-insulator Schottky-barrier field-effect transistors. Appl Phys A, 2007, 87: 351\u2013357","journal-title":"Appl Phys A"},{"key":"4267_CR8","doi-asserted-by":"crossref","first-page":"424","DOI":"10.1016\/j.mseb.2005.08.098","volume":"124\u2013125","author":"A. R. Saha","year":"2005","unstructured":"Saha A R, Chattopadhyay S, Bose C, et al. Technology CAD of silicided Schottky barrier MOSFET for elevated source C drain engineering. Mat Sci Eng B, 2005, 124\u2013125: 424\u2013430","journal-title":"Mat Sci Eng B"},{"key":"4267_CR9","doi-asserted-by":"crossref","first-page":"741","DOI":"10.1063\/1.1645665","volume":"84","author":"M. Jang","year":"2004","unstructured":"Jang M, Kim Y, Shin J, et al. A 50-nm-gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect transistor. Appl Phys Lett, 2004, 84: 741\u2013743","journal-title":"Appl Phys Lett"},{"key":"4267_CR10","doi-asserted-by":"crossref","first-page":"3082","DOI":"10.1063\/1.1513657","volume":"81","author":"J. Knoch","year":"2002","unstructured":"Knoch J, Appenzeller J. Impact of the channel thickness on the performance of Schottky barrier metal-oxide-semiconductor field-effect transistors. Appl Phys Lett, 2002, 81: 3082","journal-title":"Appl Phys Lett"},{"key":"4267_CR11","doi-asserted-by":"crossref","first-page":"1897","DOI":"10.1109\/TED.2002.804696","volume":"49","author":"G. Jing","year":"2002","unstructured":"Jing G, Lundstrom M S. A computational study of thin-body, double-gate, Schottky barrier MOSFETs. IEEE Trans Electron Dev, 2002, 49: 1897","journal-title":"IEEE Trans Electron Dev"},{"key":"4267_CR12","doi-asserted-by":"crossref","first-page":"1192","DOI":"10.1109\/TED.2008.919382","volume":"55","author":"R. Valentin","year":"2008","unstructured":"Valentin R, Dubois E, Raskin J P, et al. RF small-signal analysis of Schottky-barrier p-MOSFET. IEEE Trans Electron Dev, 2008, 55: 1192\u20131202","journal-title":"IEEE Trans Electron Dev"},{"key":"4267_CR13","doi-asserted-by":"crossref","first-page":"220","DOI":"10.1109\/LED.2004.826294","volume":"25","author":"M. Fritze","year":"2004","unstructured":"Fritze M, Chen C L, Calawa S, et al. High-speed Schottky-barrier pMOSFET with f T = 280 GHz. IEEE Electr Device L, 2004, 25: 220\u2013222","journal-title":"IEEE Electr Device L"},{"key":"4267_CR14","doi-asserted-by":"crossref","first-page":"2796","DOI":"10.1109\/TED.2007.904985","volume":"54","author":"D. J. Pearman","year":"2007","unstructured":"Pearman D J, Pailloncy G, Raskin J P, et al. Static and high-frequency behavior and performance of Schottky-barrier p-MOSFET devices. IEEE Trans Electron Dev, 2007, 54: 2796\u20132802","journal-title":"IEEE Trans Electron Dev"},{"key":"4267_CR15","doi-asserted-by":"crossref","first-page":"177","DOI":"10.1088\/1009-1963\/15\/1\/028","volume":"15","author":"G. Du","year":"2006","unstructured":"Du G, Liu X Y, Sun L, et al. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation. Chinese Phys, 2006, 15: 177","journal-title":"Chinese Phys"},{"key":"4267_CR16","doi-asserted-by":"crossref","first-page":"576","DOI":"10.1088\/0268-1242\/18\/6\/331","volume":"18","author":"L. Sun","year":"2003","unstructured":"Sun L, Liu X Y, Du G, et al. Monte Carlo simulation of Schottky contact with direct tunneling model. Semicond Sci Tech, 2003, 18: 576","journal-title":"Semicond Sci Tech"},{"key":"4267_CR17","doi-asserted-by":"crossref","first-page":"2534","DOI":"10.1063\/1.1702894","volume":"35","author":"S. M. Sze","year":"1964","unstructured":"Sze S M, Crowell C R, Kahng D. Photoelectric determination of the image force dielectric constant for hot electrons in Schottky barriers. J Appl Phys, 1964, 35: 2534\u20132536","journal-title":"J Appl Phys"},{"key":"4267_CR18","doi-asserted-by":"crossref","first-page":"556","DOI":"10.1103\/PhysRevB.14.556","volume":"14","author":"J. R. Chelikowsky","year":"1976","unstructured":"Chelikowsky J R, Cohen M L. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys Rev B, 1976, 14: 556","journal-title":"Phys Rev B"},{"key":"4267_CR19","first-page":"543","volume-title":"International Electron Devices Meeting Technical Digest","author":"C. Fiegna","year":"1999","unstructured":"Fiegna C. Physics-based analysis of RF performance of small geometry MOSFETs: methodology and application to the evaluation of the effects of scaling. International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 1999. 543\u2013546"},{"key":"4267_CR20","doi-asserted-by":"crossref","first-page":"1644","DOI":"10.1109\/16.704358","volume":"45","author":"S. Babiker","year":"1998","unstructured":"Babiker S, Asenov A, Cameron N, et al. Complete Monte Carlo RF analysis of \u201creal\u201d short-channel compound FET\u2019s. IEEE Trans Electron Dev, 1998, 45: 1644\u20131652","journal-title":"IEEE Trans Electron Dev"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-011-4267-y.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-011-4267-y\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-011-4267-y","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,6,1]],"date-time":"2019-06-01T15:36:12Z","timestamp":1559403372000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-011-4267-y"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,6,17]]},"references-count":20,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2011,8]]}},"alternative-id":["4267"],"URL":"https:\/\/doi.org\/10.1007\/s11432-011-4267-y","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2011,6,17]]}}}