{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2025,3,10]],"date-time":"2025-03-10T08:40:25Z","timestamp":1741596025066,"version":"3.38.0"},"reference-count":13,"publisher":"Springer Science and Business Media LLC","issue":"12","license":[{"start":{"date-parts":[[2011,9,9]],"date-time":"2011-09-09T00:00:00Z","timestamp":1315526400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2011,12]]},"DOI":"10.1007\/s11432-011-4321-9","type":"journal-article","created":{"date-parts":[[2011,9,9]],"date-time":"2011-09-09T12:46:13Z","timestamp":1315572373000},"page":"2673-2679","source":"Crossref","is-referenced-by-count":0,"title":["Process optimization of plasma nitridation SiON for 65 nm node gate dielectrics"],"prefix":"10.1007","volume":"54","author":[{"given":"YanDong","family":"He","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xing","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"YangYuan","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2011,9,9]]},"reference":[{"key":"4321_CR1","doi-asserted-by":"crossref","first-page":"265","DOI":"10.1147\/rd.462.0265","volume":"46","author":"J. H. Stathis","year":"2002","unstructured":"Stathis J H. Reliability limits for gate insulator in CMOS technology. IBM J Res Dev, 2002, 46: 265\u2013286","journal-title":"IBM J Res Dev"},{"key":"4321_CR2","unstructured":"Taur Y, Nowak E J. CMOS devices below 0.1um: how high will performance go. In: IEDM Tech Dig. Washington, 1997. 215\u2013218"},{"key":"4321_CR3","doi-asserted-by":"crossref","first-page":"498","DOI":"10.1109\/T-ED.1982.20732","volume":"29","author":"T. Ito","year":"1982","unstructured":"Ito T, Nakamura T, Ishikawa H. Advantages of thermal nitrider and nitroixde gate films in VLSI process. IEEE Trans Electron Dev, 1982, 29: 498\u2013503","journal-title":"IEEE Trans Electron Dev"},{"key":"4321_CR4","doi-asserted-by":"crossref","first-page":"227","DOI":"10.1109\/55.841304","volume":"21","author":"A. Kamgar","year":"2000","unstructured":"Kamgar A, Clemems J T, Ghetti A, et al. Reduced electron mobility due to nitrogen implant prior to the gate oxide growth. IEEE Electr Device L, 2000, 21: 227\u2013229","journal-title":"IEEE Electr Device L"},{"key":"4321_CR5","doi-asserted-by":"crossref","first-page":"2980","DOI":"10.1063\/1.368435","volume":"84","author":"E. P. Gusev","year":"1998","unstructured":"Gusev E P, Lu H C, Garfunkel E, et al. Nitrogen engineering of ultra-thin oxynitrides by a thermal NO\/O2\/NO process. J Appl Phys, 1998, 84: 2980\u20132982","journal-title":"J Appl Phys"},{"key":"4321_CR6","doi-asserted-by":"crossref","unstructured":"Tsujikawa S, Mine T, Shimamoto Y, et al. An ultra thin silicon nitride gate dielectric with oxygen-enriched interface (OI-SiN) for CMOS with EOT of 0.9 nm and beyond. In: VLSI Technology Tech Dig. Honolulu, 2002. 202\u2013203","DOI":"10.1109\/VLSIT.2002.1015453"},{"key":"4321_CR7","doi-asserted-by":"crossref","unstructured":"Inoue M, Tsuchimoto J, Mizutani M, et al. Ultra-thin SiN gate dielectric fabricated by N2 plasma direct nitridation. In: International Workshop on Gate Insulator. Tokyo, 2003. 58\u201360","DOI":"10.1109\/IWGI.2003.159184"},{"key":"4321_CR8","unstructured":"Tsujikawa S, Umeda H, Kawahara T, et al. A simple approach to optimizing ultra-thin SiON gate dielectrics independently for n- and p-MOSFETs. In: IEDM Tech Dig. Washington, 2005. 843\u2013846"},{"key":"4321_CR9","unstructured":"Matsushita D, Muraoka K, Nakasaki Y, et al. Dramatic improvement of Vfb shift and gmmax with ultra-thin and ultralow-leakage SiN-based SiON gate dielectrics. In: IEDM Tech Dig. Washington, 2005. 847\u2013850"},{"key":"4321_CR10","doi-asserted-by":"crossref","unstructured":"Nicollian P E, Baldwin G C, Eason K N, et al. Extending the reliability scaling limits of SiO2 through plasma nitridation. In: IEDM Tech Dig. San Francisco, 2000. 545\u2013548","DOI":"10.1109\/IEDM.2000.904376"},{"key":"4321_CR11","doi-asserted-by":"crossref","first-page":"179","DOI":"10.1109\/55.753759","volume":"20","author":"W. K. Henson","year":"1999","unstructured":"Henson W K, Ahmed K Z, Vogel E M, et al. Estimating oxide thickness of tunneling oxides down to 1.4nm using conventional capacitance-voltage measurements on MOS capacitors. IEEE Electron Lett, 1999, 20: 179\u2013181","journal-title":"IEEE Electron Lett"},{"key":"4321_CR12","doi-asserted-by":"crossref","unstructured":"Veloso A, Cubaynes F N, Rothschild A, et al. Ultra-thin oxynitride gate dielectrics by pulsed-RF DPN for 65 nm general purpose CMOS applications. In: European Solid-State Device Research Conference. Estoril, 2003. 239-242","DOI":"10.1109\/ESSDERC.2003.1256858"},{"key":"4321_CR13","unstructured":"Nagamine M, Itoh H, Satake H, et al. Radical oxygen (O*) process for highly-reliable SiO with higher film-density and smoother SiO2\/Si interface. In: IEDM Tech Dig. Washington, 1998."}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-011-4321-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-011-4321-9\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-011-4321-9","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2025,3,10]],"date-time":"2025-03-10T08:18:51Z","timestamp":1741594731000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-011-4321-9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2011,9,9]]},"references-count":13,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2011,12]]}},"alternative-id":["4321"],"URL":"https:\/\/doi.org\/10.1007\/s11432-011-4321-9","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"type":"print","value":"1674-733X"},{"type":"electronic","value":"1869-1919"}],"subject":[],"published":{"date-parts":[[2011,9,9]]}}}