{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,10]],"date-time":"2026-05-10T02:51:04Z","timestamp":1778381464803,"version":"3.51.4"},"reference-count":29,"publisher":"Springer Science and Business Media LLC","issue":"2","license":[{"start":{"date-parts":[[2013,1,29]],"date-time":"2013-01-29T00:00:00Z","timestamp":1359417600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":[],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2014,2]]},"DOI":"10.1007\/s11432-013-4810-0","type":"journal-article","created":{"date-parts":[[2013,1,18]],"date-time":"2013-01-18T10:24:53Z","timestamp":1358504693000},"page":"1-9","source":"Crossref","is-referenced-by-count":2,"title":["Remote charge scattering: a full Coulomb interaction approach and its impact on silicon nMOS FinFETs with HfO2 gate dielectric"],"prefix":"10.1007","volume":"57","author":[{"given":"KangLiang","family":"Wei","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"James","family":"Egley","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"XiaoYan","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gang","family":"Du","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2013,1,29]]},"reference":[{"key":"4810_CR1","first-page":"160","volume-title":"Symposium on VLSI Technology Technical Digest","author":"Q Xiang","year":"1998","unstructured":"Xiang Q, Yeap G, Bang D, et al. Performance and reliability of sub-100 nm MOSFETs with ultra thin direct tunneling gate oxides. In: Symposium on VLSI Technology Technical Digest. Piscataway: IEEE Press, 1998. 160\u2013161"},{"key":"4810_CR2","first-page":"241","volume-title":"International Electron Devices Meeting Technical Digest","author":"M S Krishnan","year":"1999","unstructured":"Krishnan M S, Chang L, King T J, et al. MOSFETs with 9 to 13 \u00c5 thick gate oxide. In: International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 1999. 241\u2013244"},{"key":"4810_CR3","doi-asserted-by":"crossref","first-page":"2348","DOI":"10.1143\/JJAP.41.2348","volume":"41","author":"S Takagi","year":"2002","unstructured":"Takagi S, Takayanagi M. Experimental evidence of inversion-layer mobility lowering in ultrathin gate oxide metaloxide-semiconductor field-effect-transistors with direct tunneling current. Jpn J Appl Phys, 2002, 41: 2348\u20132352","journal-title":"Jpn J Appl Phys"},{"key":"4810_CR4","first-page":"571","volume-title":"International Electron Devices Meeting Technical Digest","author":"M S Krishnan","year":"1998","unstructured":"Krishnan M S, Yeo Y C, Lu Q, et al. Remote charge scattering in MOSFETs with ultra-thin gate dielectrics. In: International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 1998. 571\u2013574"},{"key":"4810_CR5","doi-asserted-by":"crossref","first-page":"440","DOI":"10.1109\/16.822292","volume":"47","author":"N Yang","year":"2000","unstructured":"Yang N, Henson W K, Hauser J R, et al. Estimation of the effects of remote charge scattering on electron mobility of n-MOSFETs with ultrathin gate oxides. IEEE Trans Electron Dev, 2000, 47: 440\u2013447","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR6","first-page":"113","volume-title":"International Electron Devices Meeting Technical Digest","author":"I Kawashima","year":"2000","unstructured":"Kawashima I, Kamakura Y, Taniguchi K. Ensemble Monte Carlo\/molecular dynamics simulation of gate remote charge effects in small geometry MOSFETs. In: International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 2000. 113\u2013116"},{"key":"4810_CR7","doi-asserted-by":"crossref","first-page":"2391","DOI":"10.1063\/1.1510178","volume":"81","author":"S Saito","year":"2002","unstructured":"Saito S, Torii K, Hiratani M, et al. Improved theory for remote-charge-scattering-limited mobility in metal-oxidesemiconductor transistors. Appl Phys Lett, 2002, 81: 2391\u20132393","journal-title":"Appl Phys Lett"},{"key":"4810_CR8","doi-asserted-by":"crossref","first-page":"1665","DOI":"10.1109\/TED.2003.814973","volume":"50","author":"D Esseni","year":"2003","unstructured":"Esseni D, Abramo A. Modeling of electron mobility degradation by remote Coulomb scattering in ultrathin oxide MOSFETs. IEEE Trans Electron Dev, 2003, 50: 1665\u20131674","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR9","doi-asserted-by":"crossref","first-page":"3251","DOI":"10.1063\/1.1572967","volume":"82","author":"F Gamiz","year":"2003","unstructured":"Gamiz F, Roldan J B, Carceller J E, et al. Monte Carlo simulation of remote-Coulomb-scattering-limited mobility in metal-oxide-semiconductor transistors. Appl Phys Lett, 2003, 82: 3251\u20133253","journal-title":"Appl Phys Lett"},{"key":"4810_CR10","doi-asserted-by":"crossref","first-page":"4848","DOI":"10.1063\/1.1630169","volume":"83","author":"F Gamiz","year":"2003","unstructured":"Gamiz F, Fischetti M V. Remote Coulomb scattering in metal-oxide-semiconductor field effect transistors: Screening by electrons in the gate. Appl Phys Lett, 2003, 83: 4848\u20134850","journal-title":"Appl Phys Lett"},{"key":"4810_CR11","first-page":"463","volume-title":"International Electron Devices Meeting Technical Digest","author":"L Lucci","year":"2003","unstructured":"Lucci L, Esseni D, Loo J, et al. Quantitative assessment of mobility degradation by remote coulomb scattering in ultra-thin oxide MOSFETs: Measurements and simulations. In: International Electron Devices Meeting Technical Digest. Piscataway: IEEE Press, 2003. 463\u2013466"},{"key":"4810_CR12","doi-asserted-by":"crossref","first-page":"073702","DOI":"10.1063\/1.2785944","volume":"102","author":"T Ishihara","year":"2007","unstructured":"Ishihara T, Koga J, Matsuzawa K. Modeling of screening effect on remote Coulomb scattering due to gate impurities by nonuniform free carriers in poly-Si gate. J Appl Phys, 2007, 102: 073702","journal-title":"J Appl Phys"},{"key":"4810_CR13","doi-asserted-by":"crossref","first-page":"1232","DOI":"10.1063\/1.1332424","volume":"89","author":"M V Fischetti","year":"2001","unstructured":"Fischetti M V. Long-range Coulomb interactions in small Si devices-part II: Effective electron mobility in thin-oxide structures. J Appl Phys, 2001, 89: 1232\u20131250","journal-title":"J Appl Phys"},{"key":"4810_CR14","doi-asserted-by":"crossref","first-page":"1038","DOI":"10.1109\/TED.2011.2107519","volume":"58","author":"M J Chen","year":"2011","unstructured":"Chen M J, Chang S C, Kuang S J, et al. Temperature-dependent remote-Coulomb-limited electron mobility in n+-polysilicon ultrathin gate oxide nMOSFETs. IEEE Trans Electron Dev, 2011, 58: 1038\u20131044","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR15","doi-asserted-by":"crossref","first-page":"759","DOI":"10.1109\/TED.2006.870888","volume":"53","author":"M Casse","year":"2006","unstructured":"Casse M, Thevenod L, Guillaumot B, et al. Carrier transport in HfO2\/metal gate MOSFETs: Physical insight into critical parameters. IEEE Trans Electron Dev, 2006, 53: 759\u2013768","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR16","doi-asserted-by":"crossref","first-page":"736","DOI":"10.1109\/TED.2004.826863","volume":"51","author":"M Ono","year":"2004","unstructured":"Ono M, Ishihara T, Nishiyama A. Influence of dielectric constant distribution in gate dielectrics on the degradation of electron mobility by remote Coulomb scattering in inversion layers. IEEE Trans Electron Dev, 2004, 51: 736\u2013740","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR17","doi-asserted-by":"crossref","first-page":"794","DOI":"10.1016\/j.microrel.2004.11.046","volume":"45","author":"G S Lujan","year":"2005","unstructured":"Lujan G S, Magnus W, Ragnarsson L A, et al. Modeling mobility degradation due to remote Coulomb scattering from dielectric charges and its impact on MOS device performance. Microelectron Reliab, 2005, 45: 794\u2013797","journal-title":"Microelectron Reliab"},{"key":"4810_CR18","doi-asserted-by":"crossref","first-page":"113706","DOI":"10.1063\/1.2135878","volume":"98","author":"S Saito","year":"2005","unstructured":"Saito S, Torii K, Shimamoto Y, et al. Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3\/SiO2 gate stacks. J Appl Phys, 2005, 98: 113706","journal-title":"J Appl Phys"},{"key":"4810_CR19","doi-asserted-by":"crossref","first-page":"2404","DOI":"10.1016\/j.mee.2007.04.032","volume":"84","author":"S Barraud","year":"2007","unstructured":"Barraud S, Thevenod L, Casse M, et al. Modeling of remote Coulomb scattering limited mobility in MOSFET with HfO2\/SiO2 gate stacks. Microelectron Eng, 2007, 84: 2404\u20132407","journal-title":"Microelectron Eng"},{"key":"4810_CR20","first-page":"246","volume-title":"Proceedings of the 38th European Solid-State Device Research Conference","author":"P Toniutti","year":"2008","unstructured":"Toniutti P, Palestri P, Esseni D, et al. Revised analysis of the mobility and ION degradation in high-\u03ba gate stacks: surface optical phonons vs. remote Coulomb scattering. In: Proceedings of the 38th European Solid-State Device Research Conference. Piscataway: IEEE Press, 2008. 246\u2013249"},{"key":"4810_CR21","doi-asserted-by":"crossref","first-page":"1191","DOI":"10.1109\/TED.2009.2019380","volume":"56","author":"S Poli","year":"2009","unstructured":"Poli S, Pala M G, Poiroux T. Full quantum treatment of remote Coulomb scattering in silicon nanowire FETs. IEEE Trans Electron Dev, 2009, 56: 1191\u20131198","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR22","doi-asserted-by":"crossref","first-page":"1831","DOI":"10.1109\/16.870556","volume":"47","author":"W J Gross","year":"2000","unstructured":"Gross W J, Vasileska D, Ferry D K. Ultrasmall MOSFETs: The importance of the full Coulomb interaction on device characteristics. IEEE Trans Electron Dev, 2000, 47: 1831\u20131837","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR23","doi-asserted-by":"crossref","first-page":"3251","DOI":"10.1109\/TED.2008.2004647","volume":"55","author":"C Alexander","year":"2008","unstructured":"Alexander C, Roy G, Asenov A. Random-dopant-induced drain current variation in nano-MOSFETs: A threedimensional self-consistent Monte Carlo simulation study using \u201cab initio\u201d ionized impurity scattering. IEEE Trans Electron Dev, 2008, 55: 3251\u20133258","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR24","doi-asserted-by":"crossref","first-page":"2258","DOI":"10.1109\/TED.2005.856806","volume":"52","author":"G Du","year":"2005","unstructured":"Du G, Liu X, Xia Z, et al. Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation. IEEE Trans Electron Dev, 2005, 52: 2258\u20132264","journal-title":"IEEE Trans Electron Dev"},{"key":"4810_CR25","doi-asserted-by":"crossref","first-page":"084004","DOI":"10.1088\/1674-4926\/31\/8\/084004","volume":"31","author":"K L Wei","year":"2010","unstructured":"Wei K L, Liu X Y, Du G, et al. Simulation of carrier transport in heterostructures using the 2D self-consistent full-band ensemble Monte Carlo method. J Semiconductors, 2010, 31: 084004","journal-title":"J Semiconductors"},{"key":"4810_CR26","first-page":"1952","volume-title":"Proceedings of the 10th International Conference on Solid-State and Integrated Circuit Technology","author":"G Du","year":"2010","unstructured":"Du G, Zhang W, Wang J, et al. Study of 20 nm bulk FinFET by using 3D full band Monte Carlo method with effective potential quantum correction. In: Proceedings of the 10th International Conference on Solid-State and Integrated Circuit Technology. Piscataway: IEEE Press, 2010. 1952\u20131954"},{"key":"4810_CR27","doi-asserted-by":"crossref","first-page":"S139","DOI":"10.1088\/0268-1242\/19\/4\/049","volume":"19","author":"C Alexander","year":"2004","unstructured":"Alexander C, Watling J, Asenov A. Numerical carrier heating when implementing P3M to study small volume variations. Semicond Sci Technol, 2004, 19: S139\u2013S141","journal-title":"Semicond Sci Technol"},{"key":"4810_CR28","volume-title":"Classical Electrodynamics","author":"J D Jackson","year":"1998","unstructured":"Jackson J D. Classical Electrodynamics. 3rd ed. San Francisco: John Wiley & Sons, 1998","edition":"3rd ed"},{"key":"4810_CR29","doi-asserted-by":"crossref","DOI":"10.1017\/CBO9781139195065","volume-title":"Fundamentals of Modern VLSI Devices","author":"Y Taur","year":"2009","unstructured":"Taur Y, Ning T H. Fundamentals of Modern VLSI Devices. 2nd ed. London: Cambridge University Press, 2009","edition":"2nd ed."}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-013-4810-0.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-013-4810-0\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-013-4810-0","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,7,8]],"date-time":"2019-07-08T09:36:40Z","timestamp":1562578600000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-013-4810-0"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2013,1,29]]},"references-count":29,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2014,2]]}},"alternative-id":["4810"],"URL":"https:\/\/doi.org\/10.1007\/s11432-013-4810-0","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2013,1,29]]}}}