{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,3]],"date-time":"2022-04-03T19:42:14Z","timestamp":1649014934269},"reference-count":26,"publisher":"Springer Science and Business Media LLC","issue":"3","license":[{"start":{"date-parts":[[2016,11,18]],"date-time":"2016-11-18T00:00:00Z","timestamp":1479427200000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2017,3]]},"DOI":"10.1007\/s11432-014-0876-4","type":"journal-article","created":{"date-parts":[[2016,11,26]],"date-time":"2016-11-26T09:36:55Z","timestamp":1480153015000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":0,"title":["Structure descriptor for surface passivation in the simulation of atomistic models"],"prefix":"10.1007","volume":"60","author":[{"given":"Li","family":"Cao","sequence":"first","affiliation":[]},{"given":"Siukong","family":"Koo","sequence":"additional","affiliation":[]},{"given":"Jian","family":"Sun","sequence":"additional","affiliation":[]},{"given":"Guanhua","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Wenping","family":"Wang","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2016,11,18]]},"reference":[{"key":"876_CR1","doi-asserted-by":"crossref","first-page":"480","DOI":"10.1109\/T-ED.1984.21554","volume":"31","author":"D M Kim","year":"1984","unstructured":"Kim D M, Khondker A N, Ahmed S S, et al. Theory of conduction in polysilicon: drift-diffusion approach in crystalline- amorphous-crystalline semiconductor systemPart I: small signal theory. IEEE Trans Electron Dev, 1984, 31: 480\u2013493","journal-title":"IEEE Trans Electron Dev"},{"key":"876_CR2","doi-asserted-by":"crossref","first-page":"493","DOI":"10.1109\/T-ED.1984.21555","volume":"31","author":"A N Khondker","year":"1984","unstructured":"Khondker A N, Kim D M, Ahmed S S, et al. Theory of conduction in polysilicon: drift-diffusion approach in crystalline- amorphous-crystalline semiconductor systemPart II: general I-V theory. IEEE Trans Electron Dev, 1984, 31: 493\u2013500","journal-title":"IEEE Trans Electron Dev"},{"key":"876_CR3","doi-asserted-by":"crossref","first-page":"2944","DOI":"10.1063\/1.345414","volume":"67","author":"M A Green","year":"1990","unstructured":"Green M A. Intrinsic concentration, effective densities of states, and effective mass in silicon. J Appl Phys, 1990, 67: 2944\u20132954","journal-title":"J Appl Phys"},{"key":"876_CR4","doi-asserted-by":"crossref","first-page":"999","DOI":"10.1166\/jctn.2008.2538","volume":"5","author":"D Vasileska","year":"2008","unstructured":"Vasileska D, Mamaluy D, Khan H R, et al. Semiconductor device modeling. J Comput Theor Nanosci, 2008, 5: 999\u20131030","journal-title":"J Comput Theor Nanosci"},{"key":"876_CR5","doi-asserted-by":"crossref","first-page":"159","DOI":"10.1109\/TNANO.2008.917776","volume":"8","author":"A Martinez","year":"2009","unstructured":"Martinez A, Kalna K, Sushko P V, et al. Impact of body-thickness-dependent band structure on scaling of double-gate MOSFETs: a DFT\/NEGF study. IEEE Trans Nanotechnol, 2009, 8: 159\u2013166","journal-title":"IEEE Trans Nanotechnol"},{"key":"876_CR6","doi-asserted-by":"crossref","first-page":"3527","DOI":"10.1109\/TED.2013.2275231","volume":"60","author":"L N Zhang","year":"2013","unstructured":"Zhang L N, Zahid F, Zhu Y, et al. First principles simulations of nanoscale silicon devices with uniaxial strain. IEEE Trans Electron Dev, 2013, 60: 3527\u20133533","journal-title":"IEEE Trans Electron Dev"},{"key":"876_CR7","doi-asserted-by":"crossref","first-page":"035003","DOI":"10.1088\/0965-0393\/22\/3\/035003","volume":"22","author":"O I Velichko","year":"2014","unstructured":"Velichko O I, Shaman Y P, Kovaliova A P. Simulation of hydrogen diffusion and boron passivation in crystalline silicon. Modell Simul Mater Sci Eng, 2014, 22: 035003","journal-title":"Modell Simul Mater Sci Eng"},{"key":"876_CR8","doi-asserted-by":"crossref","first-page":"045116","DOI":"10.1103\/PhysRevB.74.045116","volume":"74","author":"T Vo","year":"2006","unstructured":"Vo T, Williamson A J, Galli G. First principles simulations of the structural and electronic properties of silicon nanowires. Phys Rev B, 2006, 74: 045116","journal-title":"Phys Rev B"},{"key":"876_CR9","volume-title":"Understanding and implementation of hydeogen passivation of deffects in string ribbon silicon for high-efficiency, manufacturable, silicon solar cells","author":"V Yelundur","year":"2003","unstructured":"Yelundur V. Understanding and implementation of hydeogen passivation of deffects in string ribbon silicon for high-efficiency, manufacturable, silicon solar cells. Dissertation for the Doctoral Degree. Georgia: Georgia Institute of Technology, 2003"},{"key":"876_CR10","doi-asserted-by":"crossref","first-page":"151","DOI":"10.1023\/A:1020155510718","volume":"16","author":"R D Taylor","year":"2002","unstructured":"Taylor R D, Jewsbury P J, Essex J W. A review of protein-small molecule docking methods. J Comput-Aid Mol Des, 2002, 16: 151\u2013166","journal-title":"J Comput-Aid Mol Des"},{"key":"876_CR11","doi-asserted-by":"crossref","first-page":"062109","DOI":"10.1063\/1.4817911","volume":"103","author":"C Y Yam","year":"2013","unstructured":"Yam C Y, Peng J, Chen Q, et al. A multi-scale modeling of junctionless field-effect transistors. Appl Phys Lett, 2013, 103: 062109","journal-title":"Appl Phys Lett"},{"key":"876_CR12","doi-asserted-by":"crossref","first-page":"1419","DOI":"10.1103\/PhysRevB.44.1419","volume":"44","author":"J Northrup","year":"1992","unstructured":"Northrup J. Structure of Si(100)H: dependence on the H chemical potential. Phys Rev B, 1992, 44: 1419\u20131422","journal-title":"Phys Rev B"},{"key":"876_CR13","unstructured":"Materials studio\u2014visualization and statistics software. v4.3.0.0 Accelrys Software Inc., 2008"},{"key":"876_CR14","unstructured":"HyperChem\u2014molecular modeling system. v8.0. Hypercube Inc., 2007"},{"key":"876_CR15","doi-asserted-by":"crossref","first-page":"138","DOI":"10.1016\/0921-5107(95)01264-8","volume":"36","author":"I S Zevenbergen","year":"1996","unstructured":"Zevenbergen I S, Martynov Y V, Rasmussen F B, et al. Magnetic resonance spectroscopy of hydrogen-passivated double donors in silicon. Mater Sci Eng B, 1996, 36: 138\u2013141","journal-title":"Mater Sci Eng B"},{"key":"876_CR16","doi-asserted-by":"crossref","first-page":"1874","DOI":"10.1126\/science.1080313","volume":"299","author":"D D D Ma","year":"2003","unstructured":"Ma D D D, Lee C S, Au F C K, et al. Small-Diameter silicon nanowire surfaces. Science, 2003, 299: 1874\u20131877","journal-title":"Science"},{"key":"876_CR17","doi-asserted-by":"crossref","first-page":"295","DOI":"10.1103\/PhysRevB.57.13295","volume":"57","author":"U Hansen","year":"1998","unstructured":"Hansen U, Vogl P. Hydrogen passivation of silicon surfaces: a classical molecular-dynamics study. Phys Rev B, 1998, 57: 295\u2013304","journal-title":"Phys Rev B"},{"key":"876_CR18","doi-asserted-by":"crossref","first-page":"193","DOI":"10.1109\/TCBB.2006.43","volume":"3","author":"P Daras","year":"2006","unstructured":"Daras P, Zarpalas D, Axenopoulos A, et al. Three-dimensional shape-structure comparison method for protein classi- fication. Trans Comput Biol Bioinf, 2006, 3: 193\u2013207","journal-title":"Trans Comput Biol Bioinf"},{"key":"876_CR19","doi-asserted-by":"crossref","first-page":"10024","DOI":"10.1021\/ja00051a040","volume":"114","author":"A K Rappe","year":"1992","unstructured":"Rappe A K, Casewit C J, Colwell K S, et al. UFF, a full periodic table force field for molecular mechanics and molecular dynamics simulations. J Amer Chem Soc, 1992, 114: 10024\u201310035","journal-title":"J Amer Chem Soc"},{"key":"876_CR20","doi-asserted-by":"crossref","first-page":"5179","DOI":"10.1021\/ja00124a002","volume":"117","author":"W D Cornell","year":"1995","unstructured":"Cornell W D, Cieplak P, Bayly C I, et al. A second generation force field for the simulation of proteins, nucleic acids, and organic molecules. J Amer Chem Soc, 1995, 117: 5179\u20135197","journal-title":"J Amer Chem Soc"},{"key":"876_CR21","doi-asserted-by":"crossref","first-page":"3803","DOI":"10.1021\/jp0276303","volume":"107","author":"A C T Duin van","year":"2003","unstructured":"van Duin A C T, Strachan A, Stewman S, et al. ReaxFFSiO reactive force field for silicon and silicon oxide systems. J Phys Chem A, 2003, 107: 3803\u20133811","journal-title":"J Phys Chem A"},{"key":"876_CR22","doi-asserted-by":"crossref","first-page":"75","DOI":"10.1126\/science.1061797","volume":"293","author":"H Postma","year":"2001","unstructured":"Postma H, Teepen T, Yao Z, et al. Carbon nanotube single-electron transistors at room temperature. Science, 2001, 293: 75\u201379","journal-title":"Science"},{"key":"876_CR23","doi-asserted-by":"crossref","first-page":"185503","DOI":"10.1103\/PhysRevLett.101.185503","volume":"101","author":"M Furuhashi","year":"2008","unstructured":"Furuhashi M. Chiral vector determination of carbon nanotubes by observation of interference patterns near the end cap. Phys Rev Lett, 2008, 101: 185503","journal-title":"Phys Rev Lett"},{"key":"876_CR24","doi-asserted-by":"crossref","first-page":"758","DOI":"10.1021\/nl203701g","volume":"12","author":"A D Franklin","year":"2012","unstructured":"Franklin A D, Luisier M, Han S J, et al. Sub-10nm carbon nanotube transistor. Nano Lett, 2012, 12: 758\u2013762","journal-title":"Nano Lett"},{"key":"876_CR25","doi-asserted-by":"crossref","first-page":"1071","DOI":"10.1360\/N092014-00304","volume":"44","author":"L M Peng","year":"2014","unstructured":"Peng L M, Zhang Z Y, Wang S, et al. Carbon based nanoelectronics: materials and devices (in Chinese). Sci Sin Tech, 2014, 44: 1071\u20131086","journal-title":"Sci Sin Tech"},{"key":"876_CR26","doi-asserted-by":"crossref","first-page":"103720","DOI":"10.1063\/1.3369540","volume":"107","author":"W C Wang","year":"2010","unstructured":"Wang W C, Lee G, Huang M, et al. First-principles study of GaAs(001)-\u03b22(2 \u00d7 4) surface oxidation and passivation with H, Cl, S, F, and GaO. J Appl Phys, 2010, 107: 103720","journal-title":"J Appl Phys"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-014-0876-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-014-0876-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-014-0876-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,16]],"date-time":"2019-09-16T00:23:14Z","timestamp":1568593394000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-014-0876-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,11,18]]},"references-count":26,"journal-issue":{"issue":"3","published-print":{"date-parts":[[2017,3]]}},"alternative-id":["876"],"URL":"https:\/\/doi.org\/10.1007\/s11432-014-0876-4","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,11,18]]},"article-number":"032103"}}