{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,3,29]],"date-time":"2022-03-29T08:27:13Z","timestamp":1648542433205},"reference-count":26,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T00:00:00Z","timestamp":1456790400000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2016,4]]},"DOI":"10.1007\/s11432-015-5362-2","type":"journal-article","created":{"date-parts":[[2016,3,1]],"date-time":"2016-03-01T12:47:15Z","timestamp":1456836435000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices"],"prefix":"10.1007","volume":"59","author":[{"given":"Liang","family":"He","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Hua","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peng","family":"Sun","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaofei","family":"Jia","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chongguang","family":"Dai","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jing","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Long","family":"Shao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhaoqing","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2016,3,1]]},"reference":[{"key":"5362_CR1","doi-asserted-by":"crossref","first-page":"4184","DOI":"10.1109\/TNS.2013.2290307","volume":"60","author":"D McMorrow","year":"2013","unstructured":"McMorrow D, Khachatrian A, Roche N J-H, et al. Single-Event upsets in substrate-etched CMOS SOI SRAMs using ultraviolet optical pulses with sub-Micrometer spot size. IEEE Trans Nucl Sci, 2013; 60: 4184\u20134191","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR2","first-page":"102405","volume":"57","author":"Y B He","year":"2014","unstructured":"He Y B, Chen S M. Comparison of heavy-ion induced SEU for D- and TMR-flip-flop designs in 65-nm bulk CMOS technology. Sci China Inf Sci, 2014, 57: 102405","journal-title":"Sci China Inf Sci"},{"key":"5362_CR3","doi-asserted-by":"crossref","first-page":"971","DOI":"10.1007\/s11432-011-4396-3","volume":"55","author":"Z M Wang","year":"2012","unstructured":"Wang Z M, Yao Z B, Guo H X, et al. Bitstream decoding and SEU-induced failure analysis in SRAM-based FPGAs. Sci China Inf Sci, 2012; 55: 971\u2013982","journal-title":"Sci China Inf Sci"},{"key":"5362_CR4","doi-asserted-by":"crossref","first-page":"1325","DOI":"10.1016\/j.microrel.2013.07.129","volume":"53","author":"I E Moukhtari","year":"2013","unstructured":"Moukhtari I E, Pouget V, Larue C, et al. Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell. Microelectron Rel, 2013; 53: 1325\u20131328","journal-title":"Microelectron Rel"},{"key":"5362_CR5","doi-asserted-by":"crossref","first-page":"1824","DOI":"10.1109\/TNS.2013.2248065","volume":"60","author":"E L K R Petersen","year":"2013","unstructured":"Petersen E L, Koga R, Shoga M A, et al. The single event revolution. IEEE Trans Nucl Sci, 2013; 60: 1824\u20131835","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR6","doi-asserted-by":"crossref","first-page":"950","DOI":"10.1109\/TNS.2012.2186827","volume":"59","author":"M Raine","year":"2012","unstructured":"Raine M, Hubert G, Paillet P, et al. Implementing realistic heavy ion tracks in a SEE prediction tool: comparison between different approaches. IEEE Trans Nucl Sci, 2012; 59: 950\u2013957","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR7","doi-asserted-by":"crossref","first-page":"3253","DOI":"10.1109\/TNS.2006.884788","volume":"53","author":"O A Amusan","year":"2006","unstructured":"Amusan O A, Witulski A F, Massengill LW, et al. Charge collection and charge sharing in a 130 nm CMOS technology. IEEE Trans Nucl Sci, 2006; 53: 3253\u20133258","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR8","doi-asserted-by":"crossref","first-page":"582","DOI":"10.1109\/TDMR.2008.2000892","volume":"8","author":"O A Amusan","year":"2008","unstructured":"Amusan O A, Massengill L W, Baze M P, et al. Single event upsets in deep-submicrometer technologies due to charge sharing. IEEE Trans Dev Mater Rel, 2008; 8: 582\u2013589","journal-title":"IEEE Trans Dev Mater Rel"},{"key":"5362_CR9","volume-title":"Dissertation for the Doctoral Degree","author":"D R Blum","year":"2007","unstructured":"Blum D R. Hardened by design approaches for mitigating transient faults in memory-based systems. Dissertation for the Doctoral Degree. Pullman: Washington State University, 2007"},{"key":"5362_CR10","doi-asserted-by":"crossref","first-page":"3259","DOI":"10.1109\/TNS.2006.884789","volume":"53","author":"A D Tipton","year":"2006","unstructured":"Tipton A D, Pellish J A, Reed R A, et al. Multiple-bit upset in 130 nm CMOS technology. IEEE Trans Nucl Sci, 2006; 53: 3259\u20133264","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR11","doi-asserted-by":"crossref","first-page":"73","DOI":"10.1109\/23.372135","volume":"42","author":"L W Connel","year":"1995","unstructured":"Connel L W, McDaniel P J, Prinja A K, et al. Modeling the heavy ion upset cross section. IEEE Trans Nucl Sci, 1995; 42: 73\u201382","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR12","doi-asserted-by":"crossref","first-page":"2026","DOI":"10.1109\/23.489249","volume":"42","author":"L W Connell","year":"1995","unstructured":"Connell L W, Sexton F W, Prinja A K. Further development of the heavy ion cross section for single event upset: model (HICUP). IEEE Trans Nucl Sci, 1995; 42: 2026\u20132034","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR13","doi-asserted-by":"crossref","first-page":"2559","DOI":"10.1109\/TNS.2013.2259639","volume":"60","author":"L L Foro","year":"2013","unstructured":"Foro L L, Touboul A D,Wrobel F, et al. A simple method for assessing power devices sensitivity to SEEs in atmospheric environment. IEEE Trans Nucl Sci, 2013; 60: 2559\u20132566","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR14","first-page":"473","volume-title":"In: Proceedings of IEEE International Reliability Physics Symposium, Phoenix","author":"K W Warren","year":"2008","unstructured":"Warren K W, Wilkinson J D, Weller R A, et al. Predicting neutron induced soft error rates: evaluation of accelerated ground based test methods. In: Proceedings of IEEE International Reliability Physics Symposium, Phoenix, 2008. 473\u2013477"},{"key":"5362_CR15","doi-asserted-by":"crossref","first-page":"2419","DOI":"10.1109\/TNS.2007.907678","volume":"54","author":"K M Warren","year":"2007","unstructured":"Warren K M, Sierawski B D, Reed R A, et al. Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch. IEEE Trans Nucl Sci, 2007; 54: 2419\u20132425","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR16","doi-asserted-by":"crossref","first-page":"898","DOI":"10.1109\/TNS.2006.889810","volume":"54","author":"K M Warren","year":"2007","unstructured":"Warren K M, Weller R A, Sierawski B D, et al. Application of RADSAFE to model the single event upset response of a 0.25 \u00b5m CMOS SRAM. IEEE Trans Nucl Sci, 2007; 54: 898\u2013903","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR17","doi-asserted-by":"crossref","first-page":"2886","DOI":"10.1109\/TNS.2008.2006481","volume":"55","author":"K M Warren","year":"2008","unstructured":"Warren K M, Sternberg A L, Weller R A, et al. Integrating circuit level simulation and Monte-Carlo radiation transport code for single event upset analysis in SEU hardened circuitry. IEEE Trans Nucl Sci, 2008; 55: 2886\u20132894","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR18","doi-asserted-by":"crossref","first-page":"3032","DOI":"10.1109\/TNS.2009.2034148","volume":"56","author":"G Hubert","year":"2009","unstructured":"Hubert G, Duzellier S, Inguimbert C, et al. Operational SER calculations on the SAC-C orbit using the multi-scales single event phenomena predictive platform. IEEE Trans Nucl Sci, 2009; 56: 3032\u20133042","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR19","doi-asserted-by":"crossref","first-page":"952","DOI":"10.1109\/23.510739","volume":"43","author":"E L Petersen","year":"1996","unstructured":"Petersen E L. Interpretation of heavy ion cross section measurements. IEEE Trans Nucl Sci, 1996; 43: 952\u2013959","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR20","doi-asserted-by":"crossref","first-page":"2550","DOI":"10.1109\/23.736497","volume":"45","author":"E L Petersen","year":"1998","unstructured":"Petersen E L. The SEU figure of merit and proton upset rate calculations. IEEE Trans Nucl Sci, 1998; 45: 2550\u20132562","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR21","first-page":"456","volume-title":"In: Proceedings of European Conference on Radiation and Its Effects on Components and Systems, Bruges","author":"P Roche","year":"2009","unstructured":"Roche P, Gasiot G, Uznanski S, et al. A commercial 65nm CMOS technology for space applications: heavy ion, proton and gamma test results and modeling. In: Proceedings of European Conference on Radiation and Its Effects on Components and Systems, Bruges, 2009. 456\u2013464"},{"key":"5362_CR22","doi-asserted-by":"crossref","first-page":"2055","DOI":"10.1109\/TNS.1982.4336495","volume":"29","author":"E L Petersen","year":"1982","unstructured":"Petersen E L, Shapiro P, Adams J H, et al. Calculation of cosmic-ray induced soft upsets and scaling in VLSI devices. IEEE Trans Nucl Sci, 1982; 29: 2055\u20132063","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR23","doi-asserted-by":"crossref","first-page":"526","DOI":"10.1016\/j.actaastro.2011.05.005","volume":"69","author":"G Hubert","year":"2011","unstructured":"Hubert G, Bourdarie S, Artola L, et al. Multi-scale modeling to investigate the single event effects for space missions. Acta Astronaut, 2011; 69: 526\u2013536","journal-title":"Acta Astronaut"},{"key":"5362_CR24","doi-asserted-by":"crossref","first-page":"2586","DOI":"10.1109\/23.903813","volume":"47","author":"P Hazucha","year":"2000","unstructured":"Hazucha P, Svensson C. Impact of CMOS technology scaling on the atmospheric neutron soft error rate. IEEE Trans Nucl Sci, 2000; 47: 2586\u20132594","journal-title":"IEEE Trans Nucl Sci"},{"key":"5362_CR25","doi-asserted-by":"crossref","first-page":"582","DOI":"10.1109\/TDMR.2008.2000892","volume":"8","author":"O A Amusan","year":"2008","unstructured":"Amusan O A, Massengill L W, Baze M P, et al. Single event upsets in deep-submicrometer technologies due to charge sharing. IEEE Trans Dev Mater Rel, 2008; 8: 582\u2013589","journal-title":"IEEE Trans Dev Mater Rel"},{"key":"5362_CR26","doi-asserted-by":"crossref","first-page":"904","DOI":"10.1109\/TNS.2007.902360","volume":"54","author":"D Giot","year":"2007","unstructured":"Giot D, Roche P, Gasiot G, et al. Multiple-bit upset analysis in 90 nm srams: heavy ions testing and 3d simulations. IEEE Trans Nucl Sci, 2007; 54: 904\u2013911","journal-title":"IEEE Trans Nucl Sci"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-015-5362-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-015-5362-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-015-5362-2","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,9,5]],"date-time":"2019-09-05T04:23:16Z","timestamp":1567657396000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-015-5362-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,3,1]]},"references-count":26,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2016,4]]}},"alternative-id":["5362"],"URL":"https:\/\/doi.org\/10.1007\/s11432-015-5362-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,3,1]]},"article-number":"042402"}}