{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,21]],"date-time":"2026-01-21T03:33:13Z","timestamp":1768966393203,"version":"3.49.0"},"reference-count":22,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2016,2,17]],"date-time":"2016-02-17T00:00:00Z","timestamp":1455667200000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2016,4]]},"DOI":"10.1007\/s11432-015-5454-z","type":"journal-article","created":{"date-parts":[[2016,2,20]],"date-time":"2016-02-20T06:48:47Z","timestamp":1455950927000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":9,"title":["Novel high voltage RESURF AlGaN\/GaN HEMT with charged buffer layer"],"prefix":"10.1007","volume":"59","author":[{"given":"Jiayun","family":"Xiong","sequence":"first","affiliation":[]},{"given":"Chao","family":"Yang","sequence":"additional","affiliation":[]},{"given":"Jie","family":"Wei","sequence":"additional","affiliation":[]},{"given":"Junfeng","family":"Wu","sequence":"additional","affiliation":[]},{"given":"Bo","family":"Zhang","sequence":"additional","affiliation":[]},{"given":"Xiaorong","family":"Luo","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2016,2,17]]},"reference":[{"key":"5454_CR1","doi-asserted-by":"crossref","first-page":"1481","DOI":"10.1109\/16.297751","volume":"41","author":"C T Paul","year":"1994","unstructured":"Paul C T, Ritu T. Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE Trans Electron Dev, 1994, 41: 1481\u20131483","journal-title":"IEEE Trans Electron Dev"},{"key":"5454_CR2","doi-asserted-by":"crossref","first-page":"334","DOI":"10.1063\/1.371866","volume":"87","author":"O Ambacher","year":"2000","unstructured":"Ambacher O, Foutz B, Smart J, et al. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN\/GaN heterostructures. J Appl Phys, 2000, 87: 334\u2013343","journal-title":"J Appl Phys"},{"key":"5454_CR3","doi-asserted-by":"crossref","first-page":"1555","DOI":"10.1016\/j.sse.2003.10.003","volume":"48","author":"S Wataru","year":"2004","unstructured":"Wataru S, Ichiro O, Tsuneo O, et al. Theoretical limit estimation of lateral wide band-gap semiconductor powerswitching device. Solid-State Electron, 2004, 48: 1555\u20131562","journal-title":"Solid-State Electron"},{"key":"5454_CR4","doi-asserted-by":"crossref","first-page":"473","DOI":"10.1007\/s11432-011-4496-0","volume":"55","author":"B X Duan","year":"2012","unstructured":"Duan B X, Yang Y T. Breakdown voltage analysis for the new RESURF AlGaN\/GaN HEMTs. Sci China Inf Sci, 2012, 55: 473\u2013479","journal-title":"Sci China Inf Sci"},{"key":"5454_CR5","first-page":"1492","volume":"57","author":"K Wei","year":"2008","unstructured":"Wei K, Liu X Y, He Z J, et al. DC chacteristics of AlGaN\/GaN HEMTs with a field plate gate. J Semiconduct, 2008, 57: 1492\u20131496","journal-title":"J Semiconduct"},{"key":"5454_CR6","first-page":"3050","volume":"57","author":"B T Eldad","year":"2010","unstructured":"Eldad B T, Frank B, Oliver H, et al. AlGaN\/GaN\/GaN:C back-barrier HFETs with breakdown voltage of over 1 kV and low RON\u00d7A. IEEE Trans Electron Dev, 2010, 57: 3050\u20133058","journal-title":"IEEE Trans Electron Dev"},{"key":"5454_CR7","doi-asserted-by":"crossref","first-page":"3354","DOI":"10.1109\/TED.2008.2006891","volume":"55","author":"B T Eldad","year":"2008","unstructured":"Eldad B T, Oliver H, Frank B, et al. Punchthrough-voltage enhancement of AlGaN\/GaN HEMTs using AlGaN double-heterojunction confinement. IEEE Trans Electron Dev, 2008, 55: 3354\u20133359","journal-title":"IEEE Trans Electron Dev"},{"key":"5454_CR8","doi-asserted-by":"crossref","first-page":"1638","DOI":"10.1049\/el.2013.3366","volume":"49","author":"Z Q Zhao","year":"2013","unstructured":"Zhao Z Q, Zhao Z Y, Luo Q, et al. High-voltage RESURF AlGaN\/GaN high electron mobility transistor with back electrode. Electron Lett, 2013, 49: 1638\u20131640","journal-title":"Electron Lett"},{"key":"5454_CR9","doi-asserted-by":"crossref","first-page":"1075","DOI":"10.1109\/TED.2013.2241439","volume":"60","author":"Q Zhou","year":"2013","unstructured":"Zhou Q, Chen W J, Liu S H, et al. Schottky-contact technology in InAlN\/GaN HEMTs for breakdown voltage improvement. IEEE Trans Electron Dev, 2013, 60: 1075\u20131081","journal-title":"IEEE Trans Electron Dev"},{"key":"5454_CR10","doi-asserted-by":"crossref","first-page":"3527","DOI":"10.1063\/1.1418452","volume":"79","author":"P B Klein","year":"2001","unstructured":"Klein P B, Binari S C, Ikossi K, et al. Current collapse and the role of carbon in AlGaN\u00d5GaN high electron mobility transistors grown by metalorganic vapor-phase epitaxy. Appl Phys Lett, 2001, 79: 3527\u20133529","journal-title":"Appl Phys Lett"},{"key":"5454_CR11","doi-asserted-by":"crossref","first-page":"435","DOI":"10.1109\/LED.2005.851122","volume":"26","author":"Y Cai","year":"2005","unstructured":"Cai Y, Zhou Y G, Chen K J, et al. High-performance enhancement-mode AlGaN\/GaN HEMTs using fluoride-based plasma treatment. IEEE Electron Dev Lett, 2005, 26: 435\u2013437","journal-title":"IEEE Electron Dev Lett"},{"key":"5454_CR12","first-page":"465","volume-title":"Electron Devices Meeting (IEDM)","author":"K J Chen","year":"2010","unstructured":"Chen K J, Yuan L, Wang M J, et al. Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology. In: Electron Devices Meeting (IEDM), San Francisco, 2010. 465\u2013468"},{"key":"5454_CR13","doi-asserted-by":"crossref","first-page":"189","DOI":"10.1109\/LED.2007.891281","volume":"28","author":"D Song","year":"2007","unstructured":"Song D, Liu J, Cheng Z, et al. Normally off AlGaN\/GaN low-density drain HEMT (LDD-HEMT) with enhanced breakdown voltage and reduced current collapse. IEEE Electron Dev Lett, 2007, 28: 189\u2013191","journal-title":"IEEE Electron Dev Lett"},{"key":"5454_CR14","first-page":"251","volume-title":"Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)","author":"S K Young","year":"2011","unstructured":"Young S K, Lim J Y, Seok O G, et al. High breakdown voltage AlGaN\/GaN HEMT by employing selective fluoride plasma treatment. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), San Diego, 2011. 251\u2013255"},{"key":"5454_CR15","doi-asserted-by":"crossref","first-page":"460","DOI":"10.1109\/TED.2010.2091958","volume":"58","author":"M J Wang","year":"2011","unstructured":"Wang M J, Chen K J. Improvement of the off-state breakdown voltage with fluorine ion implantation in AlGaN\/GaN HEMTs. IEEE Trans Electron Dev, 2011, 58: 460\u2013465","journal-title":"IEEE Trans Electron Dev"},{"key":"5454_CR16","doi-asserted-by":"crossref","first-page":"395","DOI":"10.1109\/TED.2005.862702","volume":"53","author":"M J Uren","year":"2006","unstructured":"Uren M J, Nash K J, Balmer R S, et al. Punch-through in short-channel AlGaN\/GaN HFETs. IEEE Trans Electron Dev, 2006, 53: 395\u2013398","journal-title":"IEEE Trans Electron Dev"},{"key":"5454_CR17","first-page":"257","volume-title":"Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)","author":"S Stephan","year":"2014","unstructured":"Stephan S, Axel E, Tommaso C, et al. TCAD methodology for simulation of GaN-HEMT power devices. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hawaii, 2014. 257\u2013260"},{"key":"5454_CR18","first-page":"1","volume-title":"Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe","author":"V Bougrov","year":"2001","unstructured":"Bougrov V, Levinshtein M E, Rumyantsev S L, et al. Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. New York: John Wiley & Sons, Inc. 2001. 1\u201330"},{"key":"5454_CR19","doi-asserted-by":"crossref","first-page":"291","DOI":"10.1109\/ISPSD.2008.4538956","volume-title":"Proceedings of the 20rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)","author":"W Huang","year":"2008","unstructured":"Huang W, Chow T P, Niiyama Y, et al. Lateral implanted RESURF GaN MOSFETs with BV up to 2.5 kV. In: Proceedings of the 20rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), Orlando, 2008. 291\u2013294"},{"key":"5454_CR20","first-page":"276","volume-title":"Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD)","author":"L Yuan","year":"2011","unstructured":"Yuan L, Chen H W, Zhou Q, et al. A novel normally-off GaN power tunnel junction FET. In: Proceedings of the 23rd International Symposium on Power Semiconductor Devices & IC's (ISPSD), San Diego, 2011. 276\u2013279"},{"key":"5454_CR21","doi-asserted-by":"crossref","first-page":"354","DOI":"10.1109\/LED.2012.2236678","volume":"34","author":"B R Park","year":"2013","unstructured":"Park B R, Lee J G, ChoiW, et al. High-quality ICPCVD SiO2for normally off AlGaN\/GaN-on-Si recessed MOSHFETs. IEEE Electron Dev Lett, 2013, 34: 354\u2013356","journal-title":"IEEE Electron Dev Lett"},{"key":"5454_CR22","first-page":"347","volume-title":"Proceedings of the 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD)","author":"O Hilt","year":"2011","unstructured":"Hilt O, Knauer A, Brunner F, et al. Normally-off AlGaN\/GaN HFET with p-type GaN Gate and AlGaN Buffer. In: Proceedings of the 22nd International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hiroshima, 2011. 347\u2013350"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-015-5454-z.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-015-5454-z\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-015-5454-z","content-type":"unspecified","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,6,14]],"date-time":"2024-06-14T13:53:19Z","timestamp":1718373199000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-015-5454-z"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2016,2,17]]},"references-count":22,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2016,4]]}},"alternative-id":["5454"],"URL":"https:\/\/doi.org\/10.1007\/s11432-015-5454-z","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2016,2,17]]},"article-number":"042410"}}