{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,22]],"date-time":"2026-01-22T13:09:33Z","timestamp":1769087373914,"version":"3.49.0"},"reference-count":17,"publisher":"Springer Science and Business Media LLC","issue":"7","license":[{"start":{"date-parts":[[2017,6,13]],"date-time":"2017-06-13T00:00:00Z","timestamp":1497312000000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2017,7]]},"DOI":"10.1007\/s11432-016-0346-1","type":"journal-article","created":{"date-parts":[[2017,6,15]],"date-time":"2017-06-15T04:47:13Z","timestamp":1497502033000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":11,"title":["Comparison of single-event upset generated by heavy ion and pulsed laser"],"prefix":"10.1007","volume":"60","author":[{"given":"Bin","family":"Liang","sequence":"first","affiliation":[]},{"given":"Ruiqiang","family":"Song","sequence":"additional","affiliation":[]},{"given":"Jianwei","family":"Han","sequence":"additional","affiliation":[]},{"given":"Yaqing","family":"Chi","sequence":"additional","affiliation":[]},{"given":"Rui","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Chunmei","family":"Hu","sequence":"additional","affiliation":[]},{"given":"Jianjun","family":"Chen","sequence":"additional","affiliation":[]},{"given":"Yingqi","family":"Ma","sequence":"additional","affiliation":[]},{"given":"Shipeng","family":"Shangguan","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2017,6,13]]},"reference":[{"key":"346_CR1","doi-asserted-by":"crossref","first-page":"4226","DOI":"10.1109\/TNS.2013.2284546","volume":"60","author":"G Gasiot","year":"2013","unstructured":"Gasiot G, Glorieux M, Clerc S, et al. Experimental soft error rate of several flip-flop designs representative of production chip in 32 nm CMOS technology. IEEE Trans Nucl Sci, 2013, 60: 4226\u20134231","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR2","doi-asserted-by":"crossref","first-page":"1008","DOI":"10.1109\/TNS.2011.2123918","volume":"58","author":"T D Loveless","year":"2011","unstructured":"Loveless T D, Jagannathan S, Reece S, et al. Neutron- and proton-induced single event upsets for D- and DICE flip-flop designs at a 40 nm technology node. IEEE Trans Nucl Sci, 2011, 58: 1008\u20131014","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR3","doi-asserted-by":"crossref","first-page":"4368","DOI":"10.1109\/TNS.2013.2289745","volume":"60","author":"N J Gaspard","year":"2013","unstructured":"Gaspard N J, Jagannathan S, Diggins Z J, et al. Technology scaling comparison of flip-flop heavy-ion single-event upset cross sections. IEEE Trans Nucl Sci, 2013, 60: 4368\u20134373","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR4","doi-asserted-by":"crossref","first-page":"1852","DOI":"10.1109\/TNS.2013.2255312","volume":"60","author":"S P Buchner","year":"2013","unstructured":"Buchner S P, Miller F, Pouget V, et al. Pulsed-laser testing for single-event effects investigations. IEEE Trans Nucl Sci, 2013, 60: 1852\u20131857","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR5","doi-asserted-by":"crossref","first-page":"1819","DOI":"10.1109\/TNS.2006.880929","volume":"53","author":"D McMorrow","year":"2006","unstructured":"McMorrow D, Buchner S, Baze M, et al. Laser-induced latchup screening and mitigation in CMOS devices. IEEE Trans Nucl Sci, 2006, 53: 1819\u20131824","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR6","doi-asserted-by":"crossref","first-page":"2338","DOI":"10.1109\/TNS.2007.910202","volume":"54","author":"V Cavrois","year":"2007","unstructured":"Cavrois V, Paillet P, McMorrow D, et al. New insights into single event transient propagation in chains of invertersevidence for propagation-induced pulse broadening. IEEE Trans Nucl Sci, 2007, 54: 2338\u20132346","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR7","doi-asserted-by":"crossref","first-page":"2842","DOI":"10.1109\/TNS.2008.2007724","volume":"55","author":"V Cavrois","year":"2008","unstructured":"Cavrois V, Paillet P, McMorrow D, et al. Investigation of the propagation induced pulse broadening (PIPB) effect on single event transients in SOI and bulk inverter chains. IEEE Trans Nucl Sci, 2008, 55: 2842\u20132853","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR8","doi-asserted-by":"crossref","first-page":"2199","DOI":"10.1109\/TNS.2003.820742","volume":"50","author":"D McMorrow","year":"2003","unstructured":"McMorrow D, Lotshaw W T, Melinger J S, et al. Three-dimensional mapping of single-event effects using two-photon absorption. IEEE Trans Nucl Sci, 2003, 50: 2199\u20132207","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR9","first-page":"52","volume-title":"In: Proceedings of the 6th IEEE International On-Line Testing Workshop, Palma de Mallorca","author":"V Pouget","year":"2000","unstructured":"Pouget V, Fouillat P, Lewis D, et al. An overview of the applications of a pulsed laser system for SEU testing. In: Proceedings of the 6th IEEE International On-Line Testing Workshop, Palma de Mallorca, 2000. 52\u201357"},{"key":"346_CR10","first-page":"177","volume-title":"In: Proceedings of IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, Amherst","author":"C Champeix","year":"2015","unstructured":"Champeix C, Borrel N, Dutertre J, et al. SEU sensitivity and modeling using picosecond pulsed laser stimulation of a D flip-flop in 40 nm CMOS technology. In: Proceedings of IEEE International Symposium on Defect and Fault Tolerance in VLSI and Nanotechnology Systems, Amherst, 2015. 177\u2013182"},{"key":"346_CR11","doi-asserted-by":"crossref","first-page":"690","DOI":"10.1063\/1.368124","volume":"84","author":"J S Melinger","year":"1998","unstructured":"Melinger J S, McMorrow D, Campbell A B, et al. Pulsed laser-induced single event upset and charge collection measurements as a function of optical penetration depth. J Appl Phys, 1998, 84: 690\u2013699","journal-title":"J Appl Phys"},{"key":"346_CR12","doi-asserted-by":"crossref","first-page":"1799","DOI":"10.1109\/TNS.2006.880939","volume":"53","author":"A Douin","year":"2006","unstructured":"Douin A, Pouget V, Darracq F, et al. Influence of laser pulse duration in single event upset testing. IEEE Trans Nucl Sci, 2006, 53: 1799\u20131805","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR13","doi-asserted-by":"crossref","first-page":"565","DOI":"10.1109\/TNS.2015.2412555","volume":"62","author":"Y T Yu","year":"2015","unstructured":"Yu Y T, Han J W, Feng G Q, et al. Correction of single event latchup rate prediction using pulsed laser mapping test. IEEE Trans Nucl Sci, 2015, 62: 565\u2013570","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR14","doi-asserted-by":"crossref","first-page":"2948","DOI":"10.1109\/TNS.2008.2005831","volume":"55","author":"T Roy","year":"2008","unstructured":"Roy T, Witulski A F, Schrimpf R D, et al. Single event mechanisms in 90 nm triple-well CMOS devices. IEEE Trans Nucl Sci, 2008, 55: 2948\u20132956","journal-title":"IEEE Trans Nucl Sci"},{"key":"346_CR15","first-page":"1","volume":"57","author":"B Liang","year":"2014","unstructured":"Liang B, Song R Q. Analyzing and mitigating the internal single-event transient in radiation hardened flip-flops at cir-cuit-level. Sci China Tech Sci, 2014, 57: 1\u20136","journal-title":"Sci China Tech Sci"},{"key":"346_CR16","first-page":"062403","volume":"58","author":"R Q Song","year":"2015","unstructured":"Song R Q, Chen S M, He Y B, et al. Flip-flops soft error rate evaluation approach considering internal single-event transient. Sci China Inf Sci, 2015, 58: 062403","journal-title":"Sci China Inf Sci"},{"key":"346_CR17","doi-asserted-by":"crossref","first-page":"595","DOI":"10.1109\/TDMR.2015.2490259","volume":"15","author":"R Q Song","year":"2015","unstructured":"Song R Q, Chen S M, Du Y K, et al. PABAM: a physics-based analytical model to estimate bipolar amplification effect induced collected charge at circuit level. IEEE Trans Device Mater Rel, 2015, 15: 595\u2013603","journal-title":"IEEE Trans Device Mater Rel"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-016-0346-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-016-0346-1\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-016-0346-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,15]],"date-time":"2017-06-15T04:47:16Z","timestamp":1497502036000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-016-0346-1"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,6,13]]},"references-count":17,"journal-issue":{"issue":"7","published-print":{"date-parts":[[2017,7]]}},"alternative-id":["346"],"URL":"https:\/\/doi.org\/10.1007\/s11432-016-0346-1","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,6,13]]},"article-number":"072401"}}