{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2022,4,2]],"date-time":"2022-04-02T06:10:16Z","timestamp":1648879816347},"reference-count":10,"publisher":"Springer Science and Business Media LLC","issue":"12","license":[{"start":{"date-parts":[[2017,2,24]],"date-time":"2017-02-24T00:00:00Z","timestamp":1487894400000},"content-version":"unspecified","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2017,12]]},"DOI":"10.1007\/s11432-016-9001-9","type":"journal-article","created":{"date-parts":[[2017,2,28]],"date-time":"2017-02-28T09:16:10Z","timestamp":1488273370000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Modeling the impact of process and operation variations on the soft error rate of digital circuits"],"prefix":"10.1007","volume":"60","author":[{"given":"Ruiqiang","family":"Song","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shuming","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bin","family":"Liang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yaqing","family":"Chi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jianjun","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2017,2,24]]},"reference":[{"key":"9001_CR1","doi-asserted-by":"crossref","first-page":"3228","DOI":"10.1109\/TNS.2010.2066287","volume":"57","author":"T D Loveless","year":"2010","unstructured":"Loveless T D, Alles M L, Ball D R, et al. Parametric variability affecting 45 nm SOI SRAM single event upset cross-section. IEEE Trans Nucl Sci, 2010, 57: 3228\u20133233","journal-title":"IEEE Trans Nucl Sci"},{"key":"9001_CR2","doi-asserted-by":"crossref","first-page":"834","DOI":"10.1109\/TNS.2010.2098419","volume":"58","author":"A V Kauppila","year":"2011","unstructured":"Kauppila A V, Bhuva B L, Kauppila J S, et al. Impact of process variations on SRAM single event upsets. IEEE Trans Nucl Sci, 2011, 58: 834\u2013839","journal-title":"IEEE Trans Nucl Sci"},{"key":"9001_CR3","first-page":"157","volume-title":"Proceedings of IEEE\/ACM International Conference on Computer-Aided Design","author":"H K Peng","year":"2009","unstructured":"Peng H K, Wen C, Bhadra J. On soft error rate analysis of scaled CMOS designs: a statistical perspective. In: Proceedings of IEEE\/ACM International Conference on Computer-Aided Design, San Jose, 2009. 157\u2013163"},{"key":"9001_CR4","doi-asserted-by":"crossref","first-page":"2914","DOI":"10.1109\/TNS.2012.2225447","volume":"59","author":"G Gasiot","year":"2012","unstructured":"Gasiot G, Castelnovo A, Glorieux M, et al, Process variability effect on soft error rate by characterization of large number of samples. IEEE Trans Nucl Sci, 2012, 59: 2914\u20132919","journal-title":"IEEE Trans Nucl Sci"},{"key":"9001_CR5","doi-asserted-by":"crossref","first-page":"1298","DOI":"10.1109\/TCSI.2009.2033528","volume":"57","author":"H Mostafa","year":"2010","unstructured":"Mostafa H, Anis M, Elmasry M, et al. A designoriented soft error rate variation model accounting for both die-to-die and within-die variations in submicrometer CMOS SRAM cells. IEEE Trans Cric Syst, 2010, 57: 1298\u20131311","journal-title":"IEEE Trans Cric Syst"},{"key":"9001_CR6","doi-asserted-by":"crossref","first-page":"2658","DOI":"10.1109\/TNS.2011.2172691","volume":"58","author":"A V Kauppila","year":"2011","unstructured":"Kauppila A V, Bhuva B L, Massengill L W, et al. Impact of process variations and charge sharing on the single event upset response of flip-flops. IEEE Trans Nucl Sci, 2011, 58: 2658\u20132663","journal-title":"IEEE Trans Nucl Sci"},{"key":"9001_CR7","first-page":"1","volume":"57","author":"B Liang","year":"2014","unstructured":"Liang B, Song R Q. Analyzing and mitigating the internal single-event transient in radiation hardened flipflops at circuit-level. Sci China Tech Sci, 2014, 57: 1\u20136","journal-title":"Sci China Tech Sci"},{"key":"9001_CR8","first-page":"062403","volume":"58","author":"R Q Song","year":"2015","unstructured":"Song R Q, Chen S M, He Y B, et al. Flip-flops soft error rate evaluation approach considering internal single-event transient. Sci China Inf Sci, 2015, 58: 062403","journal-title":"Sci China Inf Sci"},{"key":"9001_CR9","doi-asserted-by":"crossref","first-page":"1338","DOI":"10.1109\/TNS.2011.2144622","volume":"58","author":"L Artola","year":"2011","unstructured":"Artola L, Hubert G, Warren K M, et al. SEU prediction from SET model using multi-node collection in Bulk transistors and SRAMs down to the 65 nm technology node. IEEE Trans Nucl Sci, 2011, 58: 1338\u20131346","journal-title":"IEEE Trans Nucl Sci"},{"key":"9001_CR10","doi-asserted-by":"crossref","first-page":"595","DOI":"10.1109\/TDMR.2015.2490259","volume":"15","author":"R Q Song","year":"2015","unstructured":"Song R Q, Chen S M, Huang P C, et al. PABAM: a physics-based analytical model to estimate bipolar amplification effect induced collected charge at circuit level. IEEE Trans Device Mater Rel, 2015, 15: 595\u2013603","journal-title":"IEEE Trans Device Mater Rel"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-016-9001-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-016-9001-9\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-016-9001-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2017,6,25]],"date-time":"2017-06-25T07:33:44Z","timestamp":1498376024000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-016-9001-9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2017,2,24]]},"references-count":10,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2017,12]]}},"alternative-id":["9001"],"URL":"https:\/\/doi.org\/10.1007\/s11432-016-9001-9","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2017,2,24]]},"article-number":"129402"}}