{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,5,15]],"date-time":"2026-05-15T14:32:34Z","timestamp":1778855554864,"version":"3.51.4"},"reference-count":24,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2018,5,14]],"date-time":"2018-05-14T00:00:00Z","timestamp":1526256000000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2018,6]]},"DOI":"10.1007\/s11432-017-9315-4","type":"journal-article","created":{"date-parts":[[2018,5,19]],"date-time":"2018-05-19T05:34:22Z","timestamp":1526708062000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":5,"title":["Calibration of drift-diffusion model in quasi-ballistic transport region for FinFETs"],"prefix":"10.1007","volume":"61","author":[{"given":"Lei","family":"Shen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shaoyan","family":"Di","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Longxiang","family":"Yin","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoyan","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gang","family":"Du","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2018,5,14]]},"reference":[{"key":"9315_CR1","doi-asserted-by":"publisher","first-page":"133","DOI":"10.1109\/16.974760","volume":"49","author":"M Lundstrom","year":"2002","unstructured":"Lundstrom M, Ren Z B. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans Electron Dev, 2002, 49: 133\u2013141","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR2","doi-asserted-by":"publisher","first-page":"1853","DOI":"10.1109\/TED.2003.815366","volume":"50","author":"A Rahman","year":"2003","unstructured":"Rahman A, Guo J, Datta S, et al. Theory of ballistic nanotransistors. IEEE Trans Electron Dev, 2003, 50: 1853\u20131864","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR3","doi-asserted-by":"publisher","first-page":"061401","DOI":"10.1007\/s11432-016-5567-z","volume":"59","author":"S Deleonibus","year":"2016","unstructured":"Deleonibus S. Looking into the future of Nanoelectronics in the Diversification Efficient Era. Sci China Inf Sci, 2016, 59: 061401","journal-title":"Sci China Inf Sci"},{"key":"9315_CR4","doi-asserted-by":"publisher","first-page":"061402","DOI":"10.1007\/s11432-016-5561-5","volume":"59","author":"K G Cheng","year":"2016","unstructured":"Cheng K G, Khakifirooz A. Fully depleted SOI (FDSOI) technology. Sci China Inf Sci, 2016, 59: 061402","journal-title":"Sci China Inf Sci"},{"key":"9315_CR5","doi-asserted-by":"publisher","first-page":"4879","DOI":"10.1063\/1.357263","volume":"76","author":"K Natori","year":"1994","unstructured":"Natori K. Ballistic metal-oxide-semiconductor field effect transistor. J Appl Phys, 1994, 76: 4879\u20134890","journal-title":"J Appl Phys"},{"key":"9315_CR6","first-page":"1029","volume":"E84C","author":"K Natori","year":"2001","unstructured":"Natori K. Scaling limit of the MOS transistor: a ballistic MOSFET. IEICE Trans Electron, 2001, E84C: 1029\u20131036","journal-title":"IEICE Trans Electron"},{"key":"9315_CR7","doi-asserted-by":"publisher","first-page":"361","DOI":"10.1109\/55.596937","volume":"18","author":"M Lundstrom","year":"1997","unstructured":"Lundstrom M. Elementary scattering theory of the Si MOSFET. IEEE Electron Dev Lett, 1997, 18: 361\u2013363","journal-title":"IEEE Electron Dev Lett"},{"key":"9315_CR8","first-page":"99","volume-title":"Proceedings of Electron Devices and Solid-State Circuits, Taiwan","author":"P Z Yang","year":"2007","unstructured":"Yang P Z, Lau W S, Ho V, et al. A comparison between the quasi-ballistic transport model and the conventional velocity saturation model for sub-0.1-\u03bcm mos transistors. In: Proceedings of Electron Devices and Solid-State Circuits, Taiwan, 2007. 99\u2013102"},{"key":"9315_CR9","doi-asserted-by":"publisher","first-page":"2886","DOI":"10.1109\/TED.2008.2005172","volume":"55","author":"S Jin","year":"2008","unstructured":"Jin S, Fischetti M V, Tang T W. Theoretical study of carrier transport in silicon nanowire transistors based on the multisubband Boltzmann transport equation. IEEE Trans Electron Dev, 2008, 55: 2886\u20132897","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR10","first-page":"348","volume-title":"Proceedings of IEEE International Conference on Simulation of Semiconductor Processes and Devices, Glasgow","author":"S Jin","year":"2013","unstructured":"Jin S, Hong S M, Choi W, et al. Coupled drift-diffusion (DD) and multi-subband Boltzmann transport equation (MSBTE) solver for 3D multi-gate transistors. In: Proceedings of IEEE International Conference on Simulation of Semiconductor Processes and Devices, Glasgow, 2013. 348\u2013351"},{"key":"9315_CR11","doi-asserted-by":"publisher","first-page":"2816","DOI":"10.1109\/TED.2015.2445977","volume":"62","author":"K K Bhuwalka","year":"2015","unstructured":"Bhuwalka K K, Wu Z, Noh H K, et al. In0.53Ga0.47As-based nMOSFET design for low standby power applications. IEEE Trans Electron Dev, 2015, 62: 2816\u20132823","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR12","doi-asserted-by":"publisher","first-page":"04","DOI":"10.7567\/JJAP.56.060301","volume":"56","author":"S Y Di","year":"2017","unstructured":"Di S Y, Shen L, Chang P Y, et al. Performance comparison of Si, III-V double-gate n-type MOSFETs by deterministic Boltzmann transport equation solver. Jpn J Appl Phys, 2017, 56: 04CD08","journal-title":"Jpn J Appl Phys"},{"key":"9315_CR13","doi-asserted-by":"publisher","first-page":"1053","DOI":"10.1109\/TED.2017.2655261","volume":"64","author":"P Y Chang","year":"2017","unstructured":"Chang P Y, Liu X Y, Di S Y, et al. Evaluation of ballistic transport in III-V-based p-Channel MOSFETs. IEEE Trans Electron Dev, 2017, 64: 1053\u20131059","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR14","first-page":"241","volume-title":"Proceedings of International Conference on Solid State Devices and Materials, Sendai","author":"L X Yin","year":"2017","unstructured":"Yin L X, Shen L, Di S Y, et al. Investigation of thermal effects on FinFETs in the quasi-ballistic regime. In: Proceedings of International Conference on Solid State Devices and Materials, Sendai, 2017. 241\u2013242"},{"key":"9315_CR15","doi-asserted-by":"publisher","first-page":"560","DOI":"10.1002\/j.1538-7305.1950.tb03653.x","volume":"29","author":"W V Roosbroeck","year":"1950","unstructured":"Roosbroeck W V. Theory of the flow of electrons and holes in germanium and other semiconductors. Bell Syst Tech J, 1950, 29: 560\u2013607","journal-title":"Bell Syst Tech J"},{"key":"9315_CR16","doi-asserted-by":"publisher","first-page":"177","DOI":"10.1088\/1009-1963\/15\/1\/028","volume":"15","author":"G Du","year":"2006","unstructured":"Du G, Liu X Y, Han R Q. Quantum Boltzmann equation solved by Monte Carlo method for nano-scale semiconductor devices simulation. Chin Phys, 2006, 15: 177\u2013181","journal-title":"Chin Phys"},{"key":"9315_CR17","first-page":"1","volume-title":"Proceedings of International Conference on Simulation of Semiconductor Processes and Devices","author":"M Lundstrom","year":"2015","unstructured":"Lundstrom M. Drift-diffusion and computational electronics\u2014still going strong after 40 years! In: Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Washington, 2015. 1\u20133"},{"key":"9315_CR18","first-page":"109","volume-title":"Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg","author":"S Jin","year":"2016","unstructured":"Jin S, Pham A-T, Choi W, et al. Performance evaluation of FinFETs: from multisubband BTE to DD calibration. In: Proceedings of International Conference on Simulation of Semiconductor Processes and Devices, Nuremberg, 2016. 109\u2013115"},{"key":"9315_CR19","volume-title":"Sentaurus TCAD User\u2019s Manual, H-2013.03","author":"Synopsys.","year":"2013","unstructured":"Synopsys. Sentaurus TCAD User\u2019s Manual, H-2013.03, 2013"},{"key":"9315_CR20","doi-asserted-by":"publisher","first-page":"1045","DOI":"10.1109\/T-ED.1975.18267","volume":"22","author":"C Canali","year":"1975","unstructured":"Canali C, Majni G, Minder R, et al. Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature. IEEE Trans Electron Dev, 1975, 22: 1045\u20131047","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR21","doi-asserted-by":"publisher","first-page":"953","DOI":"10.1016\/0038-1101(92)90325-7","volume":"35","author":"D B M Klaassen","year":"1992","unstructured":"Klaassen D B M. A unified mobility model for device simulation-I. Model equations and concentration dependence. Solid-State Electron, 1992, 35: 953\u2013959","journal-title":"Model equations and concentration dependence. Solid-State Electron"},{"key":"9315_CR22","doi-asserted-by":"publisher","first-page":"2258","DOI":"10.1109\/TED.2005.856806","volume":"52","author":"G Du","year":"2005","unstructured":"Du G, Liu X Y, Xia Z L, et al. Monte Carlo simulation of p- and n-channel GOI MOSFETs by solving the quantum Boltzmann equation. IEEE Trans Electron Dev, 2005, 52: 2258\u20132264","journal-title":"IEEE Trans Electron Dev"},{"key":"9315_CR23","first-page":"186","volume-title":"Proceedings of International Workshop on Computational Electronics, West Lafayette","author":"G Du","year":"2004","unstructured":"Du G, Liu X Y, Xia Z L, et al. Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation. In: Proceedings of International Workshop on Computational Electronics, West Lafayette, 2004. 186\u2013187"},{"key":"9315_CR24","first-page":"1952","volume-title":"Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai","author":"G Du","year":"2010","unstructured":"Du G, Zhang W, Wang J C, et al. Study of 20 nm bulk FINFET by using 3D full band Monte Carlo method with Effective Potential Quantum Correction. In: Proceedings of IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 2010. 1952\u20131954"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-017-9315-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-017-9315-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-017-9315-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,5,14]],"date-time":"2019-05-14T00:49:03Z","timestamp":1557794943000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-017-9315-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,5,14]]},"references-count":24,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2018,6]]}},"alternative-id":["9315"],"URL":"https:\/\/doi.org\/10.1007\/s11432-017-9315-4","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,5,14]]},"assertion":[{"value":"16 November 2017","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"5 December 2017","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"11 December 2017","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"14 May 2018","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"062406"}}