{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,18]],"date-time":"2026-01-18T14:01:13Z","timestamp":1768744873953,"version":"3.49.0"},"reference-count":9,"publisher":"Springer Science and Business Media LLC","issue":"10","license":[{"start":{"date-parts":[[2018,8,31]],"date-time":"2018-08-31T00:00:00Z","timestamp":1535673600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2018,10]]},"DOI":"10.1007\/s11432-018-9398-6","type":"journal-article","created":{"date-parts":[[2018,9,18]],"date-time":"2018-09-18T05:32:12Z","timestamp":1537248732000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology"],"prefix":"10.1007","volume":"61","author":[{"given":"Bingxin","family":"Zhang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xia","family":"An","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Pengqiang","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiangyang","family":"Hu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ming","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xing","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2018,8,31]]},"reference":[{"key":"9398_CR1","doi-asserted-by":"publisher","first-page":"061401","DOI":"10.1007\/s11432-016-5567-z","volume":"59","author":"S Deleonibus","year":"2016","unstructured":"Deleonibus S. Looking into the future of nanoelectronics in the diversification efficient era. Sci China Inf Sci, 2016, 59: 061401","journal-title":"Sci China Inf Sci"},{"key":"9398_CR2","doi-asserted-by":"publisher","first-page":"042403","DOI":"10.1007\/s11432-014-5180-y","volume":"58","author":"M Lin","year":"2015","unstructured":"Lin M, An X, Li M, et al. Ge surface passivation by GeO2 fabricated by N2O plasma oxidation. Sci China Inf Sci, 2015, 58: 042403","journal-title":"Sci China Inf Sci"},{"key":"9398_CR3","doi-asserted-by":"publisher","first-page":"863","DOI":"10.1109\/LED.2010.2049979","volume":"31","author":"M R Tang","year":"2010","unstructured":"Tang M R, Huang W, Li C, et al. Thermal stability of nickel germanide formed on tensile-strained Ge epilayer on Si substrate. IEEE Electron Device Lett, 2010, 31: 863\u2013865","journal-title":"IEEE Electron Device Lett"},{"key":"9398_CR4","doi-asserted-by":"publisher","first-page":"L1389","DOI":"10.1143\/JJAP.44.L1389","volume":"44","author":"Q C Zhang","year":"2005","unstructured":"Zhang Q C, Wu N, Osipowicz T, et al. Formation and thermal stability of nickel germanide on germanium substrate. Jpn J Appl Phys, 2005, 44: L1389\u2013L1391","journal-title":"Jpn J Appl Phys"},{"key":"9398_CR5","doi-asserted-by":"publisher","first-page":"2314","DOI":"10.1109\/TED.2017.2679215","volume":"64","author":"C H Chou","year":"2017","unstructured":"Chou C H, Tsai Y H, Hsu C C, et al. Experimental realization of thermal stability enhancement of nickel germanide alloy by using TiN metal capping. IEEE Trans Electron Devices, 2017, 64: 2314\u20132320","journal-title":"IEEE Trans Electron Devices"},{"key":"9398_CR6","first-page":"176","volume-title":"Proceedings of International Workshop on Junction Technology","author":"K Kashihara","year":"2006","unstructured":"Kashihara K, Yamaguchi T, Okudaira T. Improvement of thermal stability of nickel silicide using N2 ion implantation prior to nickel film deposition. In: Proceedings of International Workshop on Junction Technology, Shanghai, 2006. 176\u2013179"},{"key":"9398_CR7","doi-asserted-by":"publisher","first-page":"051905","DOI":"10.1063\/1.2768203","volume":"91","author":"S Y Zhu","year":"2007","unstructured":"Zhu S Y, Yu M B, Lo G Q, et al. Enhanced thermal stability of nickel germanide on thin epitaxial germanium by adding an ultrathin titanium layer. Appl Phys Lett, 2007, 91: 051905","journal-title":"Appl Phys Lett"},{"key":"9398_CR8","doi-asserted-by":"publisher","first-page":"258","DOI":"10.1109\/TNANO.2009.2025129","volume":"9","author":"Y Y Zhang","year":"2010","unstructured":"Zhang Y Y, Oh J, Li S G. Improvement of thermal stability of Ni germanide using a Ni-Pt(1%) alloy on Ge-on-Si substrate for nanoscale Ge MOSFETs. IEEE Trans Nanotechnol, 2010, 9: 258\u2013263","journal-title":"IEEE Trans Nanotechnol"},{"key":"9398_CR9","doi-asserted-by":"publisher","first-page":"221","DOI":"10.3938\/jkps.55.221","volume":"55","author":"M H Kang","year":"2009","unstructured":"Kang M H, Zhang Y Y, Park K Y, et al. Suppression of nickel-germanide (NiGe) agglomeration and Ni penetration by hydrogen (H) ion shower doping in NiGe on a thin epitaxial Ge-on-Si substrate. J Korean Phy Soc, 2009, 55: 221\u2013226","journal-title":"J Korean Phy Soc"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9398-6.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-018-9398-6\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9398-6.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,12,13]],"date-time":"2019-12-13T17:22:23Z","timestamp":1576257743000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-018-9398-6"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,8,31]]},"references-count":9,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2018,10]]}},"alternative-id":["9398"],"URL":"https:\/\/doi.org\/10.1007\/s11432-018-9398-6","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,8,31]]},"assertion":[{"value":"6 February 2018","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"22 March 2018","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 March 2018","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"31 August 2018","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"109401"}}