{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,1]],"date-time":"2026-04-01T08:50:59Z","timestamp":1775033459285,"version":"3.50.1"},"reference-count":65,"publisher":"Springer Science and Business Media LLC","issue":"8","license":[{"start":{"date-parts":[[2018,7,5]],"date-time":"2018-07-05T00:00:00Z","timestamp":1530748800000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2018,8]]},"DOI":"10.1007\/s11432-018-9404-2","type":"journal-article","created":{"date-parts":[[2018,7,7]],"date-time":"2018-07-07T05:35:07Z","timestamp":1530941707000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":27,"title":["From octahedral structure motif to sub-nanosecond phase transitions in phase change materials for data storage"],"prefix":"10.1007","volume":"61","author":[{"given":"Zhitang","family":"Song","sequence":"first","affiliation":[]},{"given":"Sannian","family":"Song","sequence":"additional","affiliation":[]},{"given":"Min","family":"Zhu","sequence":"additional","affiliation":[]},{"given":"Liangcai","family":"Wu","sequence":"additional","affiliation":[]},{"given":"Kun","family":"Ren","sequence":"additional","affiliation":[]},{"given":"Wenxiong","family":"Song","sequence":"additional","affiliation":[]},{"given":"Songling","family":"Feng","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2018,7,5]]},"reference":[{"key":"9404_CR1","doi-asserted-by":"publisher","first-page":"210","DOI":"10.1126\/science.1160231","volume":"321","author":"G Atwood","year":"2008","unstructured":"Atwood G. Phase-change materials for electronic memories. Science, 2008, 321: 210\u2013211","journal-title":"Science"},{"key":"9404_CR2","doi-asserted-by":"publisher","first-page":"223","DOI":"10.1116\/1.3301579","volume":"28","author":"G W Burr","year":"2010","unstructured":"Burr G W, Breitwisch M J, Franceschini M, et al. Phase change memory technology. J Vac Sci Technol B, 2010, 28: 223\u2013262","journal-title":"J Vac Sci Technol B"},{"key":"9404_CR3","doi-asserted-by":"publisher","first-page":"824","DOI":"10.1038\/nmat2009","volume":"6","author":"M Wuttig","year":"2007","unstructured":"Wuttig M, Yamada N. Phase-change materials for rewriteable data storage. Nat Mater, 2007, 6: 824\u2013832","journal-title":"Nat Mater"},{"key":"9404_CR4","doi-asserted-by":"publisher","first-page":"132","DOI":"10.1109\/TMAG.2004.840847","volume":"41","author":"B N Engel","year":"2005","unstructured":"Engel B N, Akerman J, Butcher B, et al. A 4-Mb toggle MRAM based on a novel bit and switching method. IEEE Trans Magn, 2005, 41: 132\u2013136","journal-title":"IEEE Trans Magn"},{"key":"9404_CR5","doi-asserted-by":"publisher","first-page":"833","DOI":"10.1038\/nmat2023","volume":"6","author":"R Waser","year":"2007","unstructured":"Waser R, Aono M. Nanoionics-based resistive switching memories. Nat Mater, 2007, 6: 833\u2013840","journal-title":"Nat Mater"},{"key":"9404_CR6","volume-title":"IProceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco","author":"Q Luo","year":"2016","unstructured":"Luo Q, Xu X X, Lv H B, et al. Fully BEOL compatible TaOx-based selector with high uniformity and robust performance. n: IProceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2016"},{"key":"9404_CR7","doi-asserted-by":"publisher","first-page":"15629","DOI":"10.1039\/C6NR02029A","volume":"8","author":"Q Luo","year":"2016","unstructured":"Luo Q, Xu X X, Liu H T, et al. Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays. Nanoscale, 2016, 8: 15629\u201315636","journal-title":"Nanoscale"},{"key":"9404_CR8","doi-asserted-by":"publisher","first-page":"229","DOI":"10.1109\/LED.2012.2232640","volume":"34","author":"H B Lv","year":"2013","unstructured":"Lv H B, Li Y T, Liu Q, et al. Self-rectifying resistive-switching device with a-Si\/WO3 bilayer. IEEE Electron Device Lett, 2013, 34: 229\u2013231","journal-title":"IEEE Electron Device Lett"},{"key":"9404_CR9","doi-asserted-by":"publisher","first-page":"1190","DOI":"10.1016\/j.jmmm.2007.12.019","volume":"320","author":"D C Ralph","year":"2008","unstructured":"Ralph D C, Stiles M D. Spin transfer torques. J Magn Magn Mater, 2008, 320: 1190\u20131216","journal-title":"J Magn Magn Mater"},{"key":"9404_CR10","doi-asserted-by":"publisher","first-page":"908","DOI":"10.1587\/elex.9.908","volume":"9","author":"Y Fujisaki","year":"2012","unstructured":"Fujisaki Y. Overview of emerging semiconductor non-volatile memories. IEICE Electron Express, 2012, 9: 908\u2013925","journal-title":"IEICE Electron Express"},{"key":"9404_CR11","volume-title":"Proceedings of European Symposium on Phase-Change and Ovonic Sciences, Balzers","author":"E Varies","year":"2004","unstructured":"Varies E, Modelli A, Besana P, et al. Advances in phase change memory technology. In: Proceedings of European Symposium on Phase-Change and Ovonic Sciences, Balzers, 2004"},{"key":"9404_CR12","volume-title":"Proceedings of IEEE International Conference on Electron Devices Meeting, San Francisco","author":"D H Im","year":"2008","unstructured":"Im D H, Lee J I, Cho S L, et al. Unified 7.5 dash-type confined cell for high performance PRAM device. In: Proceedings of IEEE International Conference on Electron Devices Meeting, San Francisco, 2008"},{"key":"9404_CR13","volume-title":"Proceedings of International Electron Devices Meeting, Washington","author":"S H Lee","year":"2011","unstructured":"Lee S H, Park H C, Kim M S, et al. Highly productive PCRAM technology platform and full chip operation: based on 4F2 (84 nm pitch) cell scheme for 1 Gb and beyond. In: Proceedings of International Electron Devices Meeting, Washington, 2011"},{"key":"9404_CR14","doi-asserted-by":"publisher","first-page":"2201","DOI":"10.1109\/JPROC.2010.2070050","volume":"98","author":"H S P Wong","year":"2010","unstructured":"Wong H S P, Raoux S, Kim S B, et al. Phase change memory. Proc IEEE, 2010, 98: 2201\u20132227","journal-title":"Proc IEEE"},{"key":"9404_CR15","doi-asserted-by":"publisher","first-page":"411","DOI":"10.1007\/s00339-007-3931-y","volume":"87","author":"M Wuttig","year":"2007","unstructured":"Wuttig M, Steimer C. Phase change materials: from material science to novel storage devices. Appl Phys A, 2007, 87: 411\u2013417","journal-title":"Appl Phys A"},{"key":"9404_CR16","doi-asserted-by":"publisher","first-page":"H404","DOI":"10.1149\/1.3610229","volume":"14","author":"M Zhu","year":"2011","unstructured":"Zhu M, Wu L, Rao F, et al. Phase change characteristics of SiO2 doped Sb2Te3 materials for phase change memory application. Electrochem Solid-State Lett, 2011, 14: H404\u2013407","journal-title":"Electrochem Solid-State Lett"},{"key":"9404_CR17","doi-asserted-by":"publisher","first-page":"10105","DOI":"10.1016\/j.jallcom.2011.08.050","volume":"509","author":"M Zhu","year":"2011","unstructured":"Zhu M, Wu L C, Rao F, et al. N-doped Sb2Te phase change materials for higher data retention. J Alloy Compd, 2011, 509: 10105\u201310109","journal-title":"J Alloy Compd"},{"key":"9404_CR18","volume-title":"Proceedings of IEEE International Electron Devices Meeting (IEDM), Baltimore","author":"D Kau","year":"2009","unstructured":"Kau D, Tang S, Karpov I V, et al. A stackable cross point phase change memory. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), Baltimore, 2009"},{"key":"9404_CR19","volume-title":"Proceedings of Symposium on VLSI Technology, Honolulu","author":"I S Kim","year":"2010","unstructured":"Kim I S, Cho S L, Im D H, et al. High performance PRAM cell scalable to sub-20 nm technology with below 4F2 cell size, extendable to DRAM applications. In: Proceedings of Symposium on VLSI Technology, Honolulu, 2010"},{"key":"9404_CR20","doi-asserted-by":"publisher","first-page":"1705587","DOI":"10.1002\/adma.201705587","volume":"30","author":"Y Xie","year":"2018","unstructured":"Xie Y, Kim W, Kim Y, et al. Self-healing of a confined phase change memory device with a metallic surfactant layer. Adv Mater, 2018, 30: 1705587","journal-title":"Adv Mater"},{"key":"9404_CR21","volume-title":"Proc Epcos","author":"D H Ahn","year":"2010","unstructured":"Ahn D H, Cho S L, Horn H, et al. PRAM technology: from non volatility to high performances. Proc Epcos, 2010"},{"key":"9404_CR22","first-page":"96","volume-title":"Proceedings of Symposium on VLSI Technology, Kyoto","author":"S L Cho","year":"2005","unstructured":"Cho S L, Yi J H, Ha Y H, et al. Highly scalable on-axis confined cell structure for high density PRAM beyond 256 MB. In: Proceedings of Symposium on VLSI Technology, Kyoto, 2005. 96\u201397"},{"key":"9404_CR23","volume-title":"Proceedings of Symposium on VLSI Technology, Honolulu","author":"I S Kim","year":"2010","unstructured":"Kim I S, Cho S L, Im D H, et al. High performance PRAM cell scalable to sub-20 nm technology with below 4F2 cell size, extendable to DRAM applications. In: Proceedings of Symposium on VLSI Technology, Honolulu, 2010"},{"key":"9404_CR24","volume-title":"Proceedings of IEEE Symposium on VLSI Technology, Kyoto","author":"J I Lee","year":"2007","unstructured":"Lee J I, Park H, Cho S L, et al. Highly scalable phase change memory with CVD GeSbTe for sub 50 nm generation. In: Proceedings of IEEE Symposium on VLSI Technology, Kyoto, 2007"},{"key":"9404_CR25","volume-title":"Proceedings of IEEE International Electron Devices Meeting, San Francisco","author":"D H Im","year":"2008","unstructured":"Im D H, Lee J I, Cho S L, et al. A unified 7.5 nm dash-type confined cell for high performance PRAM device. In: Proceedings of IEEE International Electron Devices Meeting, San Francisco, 2008"},{"key":"9404_CR26","volume-title":"Symmetrical Current Controlling Device","author":"S R Ovshinsky","year":"1966","unstructured":"Ovshinsky S R. Symmetrical Current Controlling Device. CUS patent, 3271591, 1966"},{"key":"9404_CR27","doi-asserted-by":"publisher","first-page":"1450","DOI":"10.1103\/PhysRevLett.21.1450","volume":"21","author":"S R Ovshinsky","year":"1968","unstructured":"Ovshinsky S R. Reversible electrical switching phenomena in disordered structures. Phys Rev Lett, 1968, 21: 1450\u20131453","journal-title":"Phys Rev Lett"},{"key":"9404_CR28","first-page":"46","volume-title":"Proceedings of IEEE International Solid-State Circuits Conference, San Francisco","author":"Y Choi","year":"2012","unstructured":"Choi Y, Song I, Park M H, et al. A 20 nm 1.8 V 8 Gb PRAM with 40 MB\/s program bandwidth. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2012. 46\u201347"},{"key":"9404_CR29","doi-asserted-by":"publisher","first-page":"2849","DOI":"10.1063\/1.348620","volume":"69","author":"N Yamada","year":"1991","unstructured":"Yamada N, Ohno E, Nishiuchi K, et al. Rapid-phase transitions of GeTe-Sb2Te3 pseudobinary amorphous thin films for an optical disk memory. J Appl Phys, 1991, 69: 2849\u20132856","journal-title":"J Appl Phys"},{"key":"9404_CR30","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1109\/T-ED.1973.17616","volume":"20","author":"S R Ovshinsky","year":"1973","unstructured":"Ovshinsky S R, Fritzsche H. Amorphous semiconductors for switching, memory, and imaging applications. IEEE Trans Electron Devices, 1973, 20: 91\u2013105","journal-title":"IEEE Trans Electron Devices"},{"key":"9404_CR31","doi-asserted-by":"publisher","first-page":"195502","DOI":"10.1103\/PhysRevLett.103.195502","volume":"103","author":"M Xu","year":"2009","unstructured":"Xu M, Cheng Y Q, Sheng H W, et al. Nature of atomic bonding and atomic structure in the phase-change Ge2Sb2Te5 glass. Phys Rev Lett, 2009, 103: 195502","journal-title":"Phys Rev Lett"},{"key":"9404_CR32","doi-asserted-by":"publisher","first-page":"1055","DOI":"10.1073\/pnas.1119754109","volume":"109","author":"M Xu","year":"2012","unstructured":"Xu M, Cheng Y Q, Wang L, et al. Pressure tunes electrical resistivity by four orders of magnitude in amorphous Ge2Sb2Te5 phase-change memory alloy. Proc Natl Acad Sci USA, 2012, 109: 1055\u20131062","journal-title":"Proc Natl Acad Sci USA"},{"key":"9404_CR33","doi-asserted-by":"publisher","first-page":"703","DOI":"10.1038\/nmat1215","volume":"3","author":"A V Kolobov","year":"2004","unstructured":"Kolobov A V, Fons P, Frenkel A I, et al. Understanding the phase-change mechanism of rewritable optical media. Nat Mater, 2004, 3: 703\u2013708","journal-title":"Nat Mater"},{"key":"9404_CR34","doi-asserted-by":"publisher","first-page":"1612","DOI":"10.1016\/j.jnoncrysol.2005.09.050","volume":"352","author":"A V Kolobov","year":"2006","unstructured":"Kolobov A V, Fons P, Tominaga J, et al. Why DVDs work the way they do: the nanometer-scale mechanism of phase change in Ge-Sb-Te alloys. J Non-Crys Solids, 2006, 352: 1612\u20131615","journal-title":"J Non-Crys Solids"},{"key":"9404_CR35","doi-asserted-by":"publisher","first-page":"501","DOI":"10.1038\/nnano.2011.96","volume":"6","author":"R E Simpson","year":"2011","unstructured":"Simpson R E, Fons P, Kolobov A V, et al. Interfacial phase-change memory. Nat Nanotech, 2011, 6: 501\u2013505","journal-title":"Nat Nanotech"},{"key":"9404_CR36","doi-asserted-by":"publisher","first-page":"014402","DOI":"10.1088\/1468-6996\/16\/1\/014402","volume":"16","author":"J Tominaga","year":"2015","unstructured":"Tominaga J, Kolobov A V, Fons P J, et al. Giant multiferroic effects in topological GeTe-Sb2Te3 superlattices. Sci Tech Adv Mater, 2015, 16: 014402","journal-title":"Sci Tech Adv Mater"},{"key":"9404_CR37","doi-asserted-by":"publisher","first-page":"653","DOI":"10.1038\/nmat2226","volume":"7","author":"K Shportko","year":"2008","unstructured":"Shportko K, Kremers S, Woda M, et al. Resonant bonding in crystalline phase-change materials. Nat Mater, 2008, 7: 653\u2013658","journal-title":"Nat Mater"},{"key":"9404_CR38","doi-asserted-by":"publisher","first-page":"972","DOI":"10.1038\/nmat2330","volume":"7","author":"D Lencer","year":"2008","unstructured":"Lencer D, Salinga M, Grabowski B, et al. A map for phase-change materials. Nat Mater, 2008, 7: 972\u2013977","journal-title":"Nat Mater"},{"key":"9404_CR39","doi-asserted-by":"publisher","first-page":"171906","DOI":"10.1063\/1.2801626","volume":"91","author":"S Caravati","year":"2007","unstructured":"Caravati S, Bernasconi M, K\u00fchne T D, et al. Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials. Appl Phys Lett, 2007, 91: 171906","journal-title":"Appl Phys Lett"},{"key":"9404_CR40","doi-asserted-by":"publisher","first-page":"054203","DOI":"10.1103\/PhysRevB.83.054203","volume":"83","author":"M Krbal","year":"2011","unstructured":"Krbal M, Kolobov A V, Fons P, et al. Intrinsic complexity of the melt-quenched amorphous Ge2Sb2Te5 memory alloy. Phys Rev B, 2011, 83: 054203","journal-title":"Phys Rev B"},{"key":"9404_CR41","doi-asserted-by":"publisher","first-page":"209901","DOI":"10.1063\/1.4801918","volume":"102","author":"M Krbal","year":"2013","unstructured":"Krbal M, Kolobov A V, Fons P, et al. Selective detection of tetrahedral units in amorphous GeTe-based phase change alloys using Ge L3-edge x-ray absorption near-edge structure spectroscopy. Appl Phys Lett, 2013, 102: 209901","journal-title":"Appl Phys Lett"},{"key":"9404_CR42","first-page":"54","volume-title":"Proceedings of 2010 European Change and Ovonics Symposium, Milan","author":"J Tominaga","year":"2010","unstructured":"Tominaga J, Simpson R E, Fons P, et al. Phase change meta-materials and device characteristics. In: Proceedings of 2010 European Change and Ovonics Symposium, Milan, 2010. 54\u201359"},{"key":"9404_CR43","doi-asserted-by":"publisher","first-page":"1300027","DOI":"10.1002\/admi.201300027","volume":"1","author":"J Tominaga","year":"2014","unstructured":"Tominaga J, Kolobov A V, Fons P, et al. Ferroelectric order control of the dirac-semimetal phase in GeTe-Sb2Te3 superlattices. Adv Mater Inter, 2014, 1: 1300027","journal-title":"Adv Mater Inter"},{"key":"9404_CR44","doi-asserted-by":"publisher","first-page":"1706735","DOI":"10.1002\/adma.201706735","volume":"30","author":"M Zhu","year":"2018","unstructured":"Zhu M, Cojocaru-Mir\u00e9din O, Mio A M, et al. Unique bond breaking in crystalline phase change materials and the quest for metavalent bonding. Adv Mater, 2018, 30: 1706735","journal-title":"Adv Mater"},{"key":"9404_CR45","doi-asserted-by":"publisher","first-page":"053119","DOI":"10.1063\/1.4863430","volume":"104","author":"M Zhu","year":"2014","unstructured":"Zhu M, Wu L C, Rao F, et al. Uniform Ti-doped Sb2Te3 materials for high-speed phase change memory applications. Appl Phys Lett, 2014, 104: 053119","journal-title":"Appl Phys Lett"},{"key":"9404_CR46","doi-asserted-by":"publisher","first-page":"124302","DOI":"10.1063\/1.4821769","volume":"114","author":"M Zhu","year":"2013","unstructured":"Zhu M, Wu L C, Rao F, et al. The effect of titanium doping on the structure and phase change characteristics of Sb4Te. J Appl Phys, 2013, 114: 124302","journal-title":"J Appl Phys"},{"key":"9404_CR47","doi-asserted-by":"publisher","first-page":"4086","DOI":"10.1038\/ncomms5086","volume":"5","author":"M Zhu","year":"2014","unstructured":"Zhu M, Xia M J, Rao F, et al. One order of magnitude faster phase change at reduced power in Ti-Sb-Te. Nat Commun, 2014, 5: 4086","journal-title":"Nat Commun"},{"key":"9404_CR48","volume-title":"1st ed. Singapore: Springer Singapore","author":"M Zhu","year":"2017","unstructured":"Zhu M. Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism And Applications. 1st ed. Singapore: Springer Singapore, 2017"},{"key":"9404_CR49","doi-asserted-by":"publisher","first-page":"10040","DOI":"10.1038\/ncomms10040","volume":"6","author":"F Rao","year":"2015","unstructured":"Rao F, Song Z Y, Cheng Y, et al. Direct observation of titanium-centered octahedra in titanium-antimony-tellurium phase-change material. Nat Commun, 2015, 6: 10040","journal-title":"Nat Commun"},{"key":"9404_CR50","doi-asserted-by":"publisher","first-page":"9935","DOI":"10.1039\/C4NR07408D","volume":"7","author":"M Zhu","year":"2015","unstructured":"Zhu M, Xia M J, Song Z Y, et al. Understanding the crystallization behavior of as-deposited Ti-Sb-Te alloys through real-time radial distribution functions. Nanoscale, 2015, 7: 9935\u20139944","journal-title":"Nanoscale"},{"key":"9404_CR51","doi-asserted-by":"publisher","first-page":"7627","DOI":"10.1021\/acsami.5b00083","volume":"7","author":"M J Xia","year":"2015","unstructured":"Xia M J, Zhu M, Wang Y C, et al. Ti-Sb-Te alloy: a candidate for fast and long-life phase-change memory. ACS Appl Mater Inter, 2015, 7: 7627\u20137634","journal-title":"ACS Appl Mater Inter"},{"key":"9404_CR52","doi-asserted-by":"publisher","first-page":"536","DOI":"10.1109\/LED.2014.2308909","volume":"35","author":"Y C Wang","year":"2014","unstructured":"Wang Y C, Chen X G, Cheng Y, et al. RESET distribution improvement of phase change memory: the impact of pre-programming. IEEE Electron Device Lett, 2014, 35: 536\u2013538","journal-title":"IEEE Electron Device Lett"},{"key":"9404_CR53","doi-asserted-by":"publisher","first-page":"3453","DOI":"10.1007\/s12274-016-1221-8","volume":"9","author":"Y H Zheng","year":"2016","unstructured":"Zheng Y H, Xia M J, Cheng Y, et al. Direct observation of metastable face-centered cubic Sb2Te3 crystal. Nano Res, 2016, 9: 3453\u20133462","journal-title":"Nano Res"},{"key":"9404_CR54","doi-asserted-by":"publisher","first-page":"014201","DOI":"10.1103\/PhysRevB.81.014201","volume":"81","author":"S Caravati","year":"2010","unstructured":"Caravati S, Bernasconi M, Parrinello M. First-principles study of liquid and amorphous Sb2Te3. Phys Rev B, 2010, 81: 014201","journal-title":"Phys Rev B"},{"key":"9404_CR55","doi-asserted-by":"publisher","first-page":"1423","DOI":"10.1126\/science.aao3212","volume":"358","author":"F Rao","year":"2017","unstructured":"Rao F, Ding K Y, Zhou Y X, et al. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing. Science, 2017, 358: 1423\u20131427","journal-title":"Science"},{"key":"9404_CR56","doi-asserted-by":"publisher","first-page":"055507","DOI":"10.1103\/PhysRevLett.96.055507","volume":"96","author":"Z M Sun","year":"2006","unstructured":"Sun Z M, Zhou J, Ahuja R. Structure of phase change materials for data storage. Phys Rev Lett, 2006, 96: 055507","journal-title":"Phys Rev Lett"},{"key":"9404_CR57","doi-asserted-by":"publisher","first-page":"075504","DOI":"10.1103\/PhysRevLett.102.075504","volume":"102","author":"Z M Sun","year":"2009","unstructured":"Sun Z M, Zhou J, Blomqvist A, et al. Formation of large voids in the amorphous phase-change memory Ge2Sb2Te5 alloy. Phys Rev Lett, 2009, 102: 075504","journal-title":"Phys Rev Lett"},{"key":"9404_CR58","doi-asserted-by":"publisher","first-page":"59","DOI":"10.1149\/2.006203esl","volume":"15","author":"J A Xu","year":"2012","unstructured":"Xu J A, Rao F, Song Z T, et al. High speed phase change memory based on SnTe-doped Ge2Sb2Te5 material. Electrochem Solid-State Lett, 2012, 15: 59\u201361","journal-title":"Electrochem Solid-State Lett"},{"key":"9404_CR59","doi-asserted-by":"publisher","first-page":"122101","DOI":"10.1063\/1.3695036","volume":"12","author":"M Zhu","year":"2012","unstructured":"Zhu M, Wu L C, Rao F, et al. Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed. Appl Phys Lett, 2012, 12: 122101","journal-title":"Appl Phys Lett"},{"key":"9404_CR60","doi-asserted-by":"publisher","first-page":"129","DOI":"10.1038\/nmat2931","volume":"10","author":"T Matsunaga","year":"2011","unstructured":"Matsunaga T, Akola J, Kohara S, et al. From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials. Nat Mater, 2011, 10: 129\u2013134","journal-title":"Nat Mater"},{"key":"9404_CR61","doi-asserted-by":"publisher","first-page":"224111","DOI":"10.1103\/PhysRevB.78.224111","volume":"78","author":"J L F Silva Da","year":"2008","unstructured":"Da Silva J L F, Walsh A, Lee H. Insights into the structure of the stable and metastable (GeTe)m(Sb2Te3)n compounds. Phys Rev B, 2008, 78: 224111","journal-title":"Phys Rev B"},{"key":"9404_CR62","doi-asserted-by":"publisher","first-page":"4130","DOI":"10.1063\/1.373041","volume":"87","author":"I Friedrich","year":"2000","unstructured":"Friedrich I, Weidenhof V, Njoroge W, et al. Structural transformations of Ge2Sb2Te5 films studied by electrical resistance measurements. J Appl Phys, 2000, 87: 4130\u20134134","journal-title":"J Appl Phys"},{"key":"9404_CR63","doi-asserted-by":"publisher","first-page":"10204","DOI":"10.1002\/anie.201612121","volume":"56","author":"M K\u00fcpers","year":"2017","unstructured":"K\u00fcpers M, Konze P M, Maintz S, et al. Unexpected Ge-Ge contacts in the two-dimensional Ge4Se3Te phase and analysis of their chemical cause with the density of energy (DOE) function. Angew Chem Int Ed, 2017, 56: 10204\u201310208","journal-title":"Angew Chem Int Ed"},{"key":"9404_CR64","doi-asserted-by":"publisher","first-page":"094303","DOI":"10.1103\/PhysRevB.89.094303","volume":"89","author":"V L Deringer","year":"2014","unstructured":"Deringer V L, Stoffel R P, Dronskowski R. Vibrational and thermodynamic properties of GeSe in the quasiharmonic approximation. Phys Rev B, 2014, 89: 094303","journal-title":"Phys Rev B"},{"key":"9404_CR65","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1016\/j.actamat.2015.12.010","volume":"105","author":"A Lotnyk","year":"2016","unstructured":"Lotnyk A, Bern\u00fctz S, Sun X X, et al. Real-space imaging of atomic arrangement and vacancy layers ordering in laser crystallised Ge2Sb2Te5 phase change thin films. Acta Mater, 2016, 105: 1\u20138","journal-title":"Acta Mater"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9404-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-018-9404-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9404-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2019,7,4]],"date-time":"2019-07-04T23:20:26Z","timestamp":1562282426000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-018-9404-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2018,7,5]]},"references-count":65,"journal-issue":{"issue":"8","published-print":{"date-parts":[[2018,8]]}},"alternative-id":["9404"],"URL":"https:\/\/doi.org\/10.1007\/s11432-018-9404-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2018,7,5]]},"assertion":[{"value":"9 February 2018","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 March 2018","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"30 March 2018","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"5 July 2018","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"081302"}}