{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,5,12]],"date-time":"2023-05-12T11:48:51Z","timestamp":1683892131546},"reference-count":19,"publisher":"Springer Science and Business Media LLC","issue":"6","license":[{"start":{"date-parts":[[2019,1,18]],"date-time":"2019-01-18T00:00:00Z","timestamp":1547769600000},"content-version":"tdm","delay-in-days":0,"URL":"http:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2019,6]]},"DOI":"10.1007\/s11432-018-9429-2","type":"journal-article","created":{"date-parts":[[2019,1,23]],"date-time":"2019-01-23T23:56:28Z","timestamp":1548287788000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs"],"prefix":"10.1007","volume":"62","author":[{"given":"Qian","family":"Xie","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Chen","family":"Chen","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mingjun","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Shuang","family":"Xia","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zheng","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2019,1,18]]},"reference":[{"key":"9429_CR1","doi-asserted-by":"publisher","first-page":"768","DOI":"10.1038\/nnano.2014.207","volume":"9","author":"G Fiori","year":"2014","unstructured":"Fiori G, Bonaccorso F, Iannaccone G, et al. Electronics based on two-dimensional materials. Nat Nanotech, 2014, 9: 768\u2013779","journal-title":"Nat Nanotech"},{"key":"9429_CR2","doi-asserted-by":"publisher","first-page":"6259","DOI":"10.1021\/nn501723y","volume":"8","author":"T Roy","year":"2014","unstructured":"Roy T, Tosun M, Kang J S, et al. Field-effect transistors built from all two-dimensional material components. ACS Nano, 2014, 8: 6259\u20136264","journal-title":"ACS Nano"},{"key":"9429_CR3","doi-asserted-by":"publisher","first-page":"546","DOI":"10.1109\/LED.2012.2184520","volume":"33","author":"H Liu","year":"2012","unstructured":"Liu H, Ye P D. MoS2 Dual-gate MOSFET with atomic-layer-deposited Al2O3 as top-gate dielectric. IEEE Electron Device Lett, 2012, 33: 546\u2013548","journal-title":"IEEE Electron Device Lett"},{"key":"9429_CR4","doi-asserted-by":"publisher","first-page":"061405","DOI":"10.1007\/s11432-016-5559-z","volume":"59","author":"X F Li","year":"2016","unstructured":"Li X F, Gao T T, Wu Y Q. Development of two-dimensional materials for electronic applications. Sci China Inf Sci, 2016, 59: 061405","journal-title":"Sci China Inf Sci"},{"key":"9429_CR5","first-page":"268","volume-title":"Proceedings of IEEE Electron Devices Technology and Manufacturing Conference (EDTM)","author":"R Liang","year":"2017","unstructured":"Liang R, Jiang C, Wang J, et al. An analytical charge-sheet drain current model for monolayer transition metal dichalcogenide negative capacitance field-effect transistors. In: Proceedings of IEEE Electron Devices Technology and Manufacturing Conference (EDTM), Toyama, 2017. 268\u2013269"},{"key":"9429_CR6","doi-asserted-by":"publisher","first-page":"4282","DOI":"10.1109\/TED.2014.2365028","volume":"61","author":"W Cao","year":"2014","unstructured":"Cao W, Kang J, Liu W, et al. A compact current-voltage model for 2D semiconductor based field-effect transistors considering interface traps, mobility degradation, and inefficient doping effect. IEEE Trans Electron Dev, 2014, 61: 4282\u20134290","journal-title":"IEEE Trans Electron Dev"},{"key":"9429_CR7","doi-asserted-by":"publisher","first-page":"1569","DOI":"10.1109\/TED.2012.2191556","volume":"59","author":"Q Xie","year":"2012","unstructured":"Xie Q, Xu J, Taur Y. Review and critique of analytic models of MOSFET short-channel effects in subthreshold. IEEE Trans Electron Dev, 2012, 59: 1569\u20131579","journal-title":"IEEE Trans Electron Dev"},{"key":"9429_CR8","first-page":"062403","volume":"56","author":"R S Wang","year":"2013","unstructured":"Wang R S, Yu T, Huang R, et al. Impacts of short-channel effects on the random threshold voltage variation in nanoscale transistors. Sci China Inf Sci, 2013, 56: 062403","journal-title":"Sci China Inf Sci"},{"key":"9429_CR9","doi-asserted-by":"publisher","first-page":"481","DOI":"10.1109\/T-ED.1970.17014","volume":"17","author":"G Baum","year":"1970","unstructured":"Baum G, Beneking H. Drift velocity saturation in MOS transistors. IEEE Trans Electron Dev, 1970, 17: 481\u2013482","journal-title":"IEEE Trans Electron Dev"},{"key":"9429_CR10","doi-asserted-by":"publisher","first-page":"2550","DOI":"10.1109\/TED.2016.2547949","volume":"63","author":"Y Taur","year":"2016","unstructured":"Taur Y, Wu J, Min J. A short-channel I-V model for 2-D MOSFETs. IEEE Trans Electron Dev, 2016, 63: 2550\u20132555","journal-title":"IEEE Trans Electron Dev"},{"key":"9429_CR11","first-page":"805","volume-title":"Proceedings of the 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou","author":"C Chen","year":"2016","unstructured":"Chen C, Xie Q. Investigation on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. In: Proceedings of the 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016. 805\u2013807"},{"key":"9429_CR12","doi-asserted-by":"publisher","first-page":"748","DOI":"10.1109\/JSSC.1987.1052809","volume":"22","author":"E Seevinck","year":"1987","unstructured":"Seevinck E, List F J, Lohstroh J. Static-noise margin analysis of MOS SRAM cells. IEEE J Solid-State Circ, 1987, 22: 748\u2013754","journal-title":"IEEE J Solid-State Circ"},{"key":"9429_CR13","doi-asserted-by":"publisher","first-page":"1245","DOI":"10.1109\/TVLSI.2014.2336851","volume":"23","author":"J Yao","year":"2015","unstructured":"Yao J, Ye Z, Wang Y. An efficient SRAM yield analysis and optimization method with adaptive online surrogate modeling. IEEE Trans Very Large Scale Integr Syst, 2015, 23: 1245\u20131253","journal-title":"IEEE Trans Very Large Scale Integr Syst"},{"key":"9429_CR14","doi-asserted-by":"publisher","first-page":"243501","DOI":"10.1063\/1.4770313","volume":"101","author":"D Jim\u00e9nez","year":"2012","unstructured":"Jim\u00e9nez D. Drift-diffusion model for single layer transition metal dichalcogenide field-effect transistors. Appl Phys Lett, 2012, 101: 243501","journal-title":"Appl Phys Lett"},{"key":"9429_CR15","doi-asserted-by":"publisher","first-page":"803","DOI":"10.1109\/JSSC.1983.1052035","volume":"18","author":"J Lohstroh","year":"1983","unstructured":"Lohstroh J, Seevinck E, de Groot J. Worst-case static noise margin criteria for logic circuits and their mathematical equivalence. IEEE J Solid-State Circ, 1983, 18: 803\u2013807","journal-title":"IEEE J Solid-State Circ"},{"key":"9429_CR16","doi-asserted-by":"publisher","first-page":"1385","DOI":"10.1109\/TED.2004.832707","volume":"51","author":"X Liang","year":"2004","unstructured":"Liang X, Taur Y. A 2-D analytical solution for SCEs in DG MOSFETs. IEEE Trans Electron Dev, 2004, 51: 1385\u20131391","journal-title":"IEEE Trans Electron Dev"},{"key":"9429_CR17","doi-asserted-by":"publisher","first-page":"107","DOI":"10.1109\/LED.2003.822661","volume":"25","author":"Y Taur","year":"2004","unstructured":"Taur Y, Liang X, Wang W, et al. A continuous, analytic drain-current model for DG MOSFETs. IEEE Electron Dev Lett, 2004, 25: 107\u2013109","journal-title":"IEEE Electron Dev Lett"},{"key":"9429_CR18","first-page":"152","volume-title":"Prcoeedings of the 9th International Symposium on Quality Electronic Design","author":"L Zhang","year":"2008","unstructured":"Zhang L, Yu Z, He X. A statistical characterization of CMOS process fluctuations in subthreshold current mirrors. In: Prcoeedings of the 9th International Symposium on Quality Electronic Design, San Jose, 2008. 152\u2013155"},{"key":"9429_CR19","first-page":"672","volume-title":"Prcoeedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits","author":"Q Xie","year":"2009","unstructured":"Xie Q, Zhao M, Xu J, et al. Static noise margin analysis of double-gate MOSFETs SRAM. In: Prcoeedings of the 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, Suzhou, 2009. 672\u2013676"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9429-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/article\/10.1007\/s11432-018-9429-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"http:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9429-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2020,1,18]],"date-time":"2020-01-18T00:21:39Z","timestamp":1579306899000},"score":1,"resource":{"primary":{"URL":"http:\/\/link.springer.com\/10.1007\/s11432-018-9429-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,1,18]]},"references-count":19,"journal-issue":{"issue":"6","published-print":{"date-parts":[[2019,6]]}},"alternative-id":["9429"],"URL":"https:\/\/doi.org\/10.1007\/s11432-018-9429-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,1,18]]},"assertion":[{"value":"15 January 2018","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"3 March 2018","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 March 2018","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 January 2019","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"62404"}}