{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,8,8]],"date-time":"2023-08-08T11:10:23Z","timestamp":1691493023873},"reference-count":34,"publisher":"Springer Science and Business Media LLC","issue":"12","license":[{"start":{"date-parts":[[2019,11,7]],"date-time":"2019-11-07T00:00:00Z","timestamp":1573084800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2019,11,7]],"date-time":"2019-11-07T00:00:00Z","timestamp":1573084800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2019,12]]},"DOI":"10.1007\/s11432-018-9799-1","type":"journal-article","created":{"date-parts":[[2019,11,9]],"date-time":"2019-11-09T11:02:36Z","timestamp":1573297356000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Total ionizing dose effects on graphene-based charge-trapping memory"],"prefix":"10.1007","volume":"62","author":[{"given":"Kai","family":"Xi","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinshun","family":"Bi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Sandip","family":"Majumdar","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Bo","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jing","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yannan","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ming","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2019,11,7]]},"reference":[{"key":"9799_CR1","doi-asserted-by":"publisher","first-page":"1953","DOI":"10.1109\/TNS.2013.2254497","volume":"60","author":"S Gerardin","year":"2013","unstructured":"Gerardin S, Bagatin M, Paccagnella A, et al. Radiation effects in flash memories. IEEE Trans Nucl Sci, 2013, 60: 1953\u20131969","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR2","doi-asserted-by":"publisher","first-page":"725","DOI":"10.2478\/s11534-014-0503-6","volume":"12","author":"A Petrov","year":"2014","unstructured":"Petrov A, Vasil\u2019ev A, Ulanova A, et al. Flash memory cells data loss caused by total ionizing dose and heavy ions. Open Phys, 2014, 12: 725\u2013729","journal-title":"Open Phys"},{"key":"9799_CR3","first-page":"3016","volume":"57","author":"S Gerardin","year":"2010","unstructured":"Gerardin S, Paccagnella A. Present and future non-volatile memories for space. IEEE Trans Nucl Sci, 2010, 57: 3016\u20133039","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR4","doi-asserted-by":"publisher","first-page":"036003","DOI":"10.1088\/1674-1137\/40\/3\/036003","volume":"40","author":"M H Liu","year":"2016","unstructured":"Liu M H, Lu W, Ma W Y, et al. Total ionizing dose effects of domestic SiGe HBTs under different dose rates. Chin Phys C, 2016, 40: 036003","journal-title":"Chin Phys C"},{"key":"9799_CR5","doi-asserted-by":"publisher","first-page":"200","DOI":"10.1109\/TNS.2017.2782215","volume":"65","author":"J S Bi","year":"2018","unstructured":"Bi J S, Xu Y N, Xu G B, et al. Total ionization dose effects on charge-trapping memory with Al2O3\/HfO2\/Al2O trilayer structure. IEEE Trans Nucl Sci, 2018, 65: 200\u2013205","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR6","doi-asserted-by":"publisher","first-page":"164103","DOI":"10.1063\/1.5050054","volume":"113","author":"K Xi","year":"2018","unstructured":"Xi K, Bi J S, Hu Y, et al. Impact of \u03b3-ray irradiation on graphene nano-disc non-volatile memory. Appl Phys Lett, 2018, 113: 164103","journal-title":"Appl Phys Lett"},{"key":"9799_CR7","doi-asserted-by":"publisher","first-page":"120401","DOI":"10.1007\/s11432-017-9239-5","volume":"60","author":"Y N Xu","year":"2017","unstructured":"Xu Y N, Bi J S, Xu G B, et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci China Inf Sci, 2017, 60: 120401","journal-title":"Sci China Inf Sci"},{"key":"9799_CR8","doi-asserted-by":"publisher","first-page":"4540","DOI":"10.1109\/TNS.2013.2289369","volume":"60","author":"J S Bi","year":"2013","unstructured":"Bi J S, Han Z S, Zhang E X, et al. The impact of X-ray and proton irradiation on HfO2\/Hf-based bipolar resistive memories. IEEE Trans Nucl Sci, 2013, 60: 4540\u20134546","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR9","doi-asserted-by":"publisher","first-page":"088505","DOI":"10.1088\/1674-1056\/23\/8\/088505","volume":"23","author":"J S Bi","year":"2014","unstructured":"Bi J S, Zeng C B, Gao L C, et al. Estimation of pulsed laser-induced single event transient in a partially depleted silicon-on-insulator 0.18-\u00b5m MOSFET. Chin Phys B, 2014, 23: 088505","journal-title":"Chin Phys B"},{"key":"9799_CR10","doi-asserted-by":"publisher","first-page":"1271","DOI":"10.1109\/TNS.2018.2837032","volume":"65","author":"X J Li","year":"2018","unstructured":"Li X J, Yang J Q, Fleetwood D M, et al. Hydrogen soaking, displacement damage effects, and charge yield in gated lateral bipolar junction transistors. IEEE Trans Nucl Sci, 2018, 65: 1271\u20131276","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR11","doi-asserted-by":"publisher","first-page":"1264","DOI":"10.1109\/TNS.2018.2837015","volume":"65","author":"Z J Wang","year":"2018","unstructured":"Wang Z J, Xue Y Y, Chen W, et al. Fixed pattern noise and temporal noise degradation induced by radiation effects in pinned photodiode CMOS image sensors. IEEE Trans Nucl Sci, 2018, 65: 1264\u20131270","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR12","doi-asserted-by":"publisher","first-page":"3217","DOI":"10.1109\/TNS.2006.885843","volume":"53","author":"T R Oldham","year":"2006","unstructured":"Oldham T R, Ladbury R L, Friendlich M, et al. SEE and TID characterization of an advanced commercial 2 Gbit NAND flash nonvolatile memory. IEEE Trans Nucl Sci, 2006, 53: 3217\u20133222","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR13","doi-asserted-by":"publisher","first-page":"1937","DOI":"10.1109\/TNS.2008.2009982","volume":"56","author":"H Schmidt","year":"2009","unstructured":"Schmidt H, Grurmann K, Nickson B, et al. TID test of an 8-Gbit NAND flash memory. IEEE Trans Nucl Sci, 2009, 56: 1937\u20131940","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR14","doi-asserted-by":"publisher","first-page":"1744","DOI":"10.1109\/23.819148","volume":"46","author":"D N Nguyen","year":"1999","unstructured":"Nguyen D N, Guertin S M, Swift G M, et al. Radiation effects on advanced flash memories. IEEE Trans Nucl Sci, 1999, 46: 1744\u20131750","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR15","doi-asserted-by":"publisher","first-page":"2431","DOI":"10.1109\/TNS.2015.2488539","volume":"62","author":"L T Clark","year":"2015","unstructured":"Clark L T, Holbert K E, Adams J W, et al. Evaluation of 1.5-T cell flash memory total ionizing dose response. IEEE Trans Nucl Sci, 2015, 62: 2431\u20132439","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR16","doi-asserted-by":"publisher","first-page":"814","DOI":"10.1557\/mrs2004.233","volume":"29","author":"A Fazio","year":"2004","unstructured":"Fazio A. Flash memory scaling. MRS Bull, 2004, 29: 814\u2013817","journal-title":"MRS Bull"},{"key":"9799_CR17","doi-asserted-by":"publisher","first-page":"1500222","DOI":"10.1126\/sciadv.1500222","volume":"1","author":"L Banszerus","year":"2015","unstructured":"Banszerus L, Schmitz M, Engels S, et al. Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper. Sci Adv, 2015, 1: 1500222","journal-title":"Sci Adv"},{"key":"9799_CR18","doi-asserted-by":"publisher","first-page":"22","DOI":"10.1016\/j.carbon.2016.01.076","volume":"101","author":"P F Zhai","year":"2016","unstructured":"Zhai P F, Liu J, Zeng J, et al. Evidence for re-crystallization process in the irradiated graphite with heavy ions obtained by Raman spectroscopy. Carbon, 2016, 101: 22\u201327","journal-title":"Carbon"},{"key":"9799_CR19","doi-asserted-by":"publisher","first-page":"965","DOI":"10.1038\/nnano.2015.192","volume":"10","author":"R Ribeiro-Palau","year":"2015","unstructured":"Ribeiro-Palau R, Lafont F, Brun-Picard J, et al. Quantum Hall resistance standard in graphene devices under relaxed experimental conditions. Nat Nanotech, 2015, 10: 965\u2013971","journal-title":"Nat Nanotech"},{"key":"9799_CR20","doi-asserted-by":"publisher","first-page":"206","DOI":"10.1038\/nnano.2008.58","volume":"3","author":"J H Chen","year":"2008","unstructured":"Chen J H, Jang C, Xiao S, et al. Intrinsic and extrinsic performance limits of graphene devices on SiO2. Nat Nanotech, 2008, 3: 206\u2013209","journal-title":"Nat Nanotech"},{"key":"9799_CR21","doi-asserted-by":"publisher","first-page":"347","DOI":"10.1038\/nature05180","volume":"444","author":"Y W Son","year":"2006","unstructured":"Son Y W, Cohen M L, Louie S G. Half-metallic graphene nanoribbons. Nature, 2006, 444: 347\u2013349","journal-title":"Nature"},{"key":"9799_CR22","doi-asserted-by":"publisher","first-page":"844","DOI":"10.1021\/nl2038979","volume":"12","author":"J Peng","year":"2012","unstructured":"Peng J, Gao W, Gupta B K, et al. Graphene quantum dots derived from carbon fibers. Nano Lett, 2012, 12: 844\u2013849","journal-title":"Nano Lett"},{"key":"9799_CR23","doi-asserted-by":"publisher","first-page":"48","DOI":"10.1016\/j.carbon.2016.05.018","volume":"106","author":"M W Lee","year":"2016","unstructured":"Lee M W, Kim H Y, Yoon H, et al. Fabrication of dispersible graphene flakes using thermal plasma jet and their thin films for solar cells. Carbon, 2016, 106: 48\u201355","journal-title":"Carbon"},{"key":"9799_CR24","doi-asserted-by":"publisher","first-page":"255203","DOI":"10.1088\/0957-4484\/25\/25\/255203","volume":"25","author":"S S Joo","year":"2014","unstructured":"Joo S S, Kim J, Kang S S, et al. Graphene-quantum-dot nonvolatile charge-trap flash memories. Nanotechnology, 2014, 25: 255203","journal-title":"Nanotechnology"},{"key":"9799_CR25","doi-asserted-by":"publisher","first-page":"143109","DOI":"10.1063\/1.3383234","volume":"96","author":"S Wang","year":"2010","unstructured":"Wang S, Pu J, Chan D S H, et al. Wide memory window in graphene oxide charge storage nodes. Appl Phys Lett, 2010, 96: 143109","journal-title":"Appl Phys Lett"},{"key":"9799_CR26","doi-asserted-by":"publisher","first-page":"2126","DOI":"10.1038\/srep02126","volume":"3","author":"R Yang","year":"2013","unstructured":"Yang R, Zhu C X, Meng J L, et al. Isolated nanographene crystals for nano-floating gate in charge trapping memory. Sci Rep, 2013, 3: 2126","journal-title":"Sci Rep"},{"key":"9799_CR27","doi-asserted-by":"publisher","first-page":"318","DOI":"10.1016\/j.carbon.2016.11.063","volume":"113","author":"J C Wang","year":"2017","unstructured":"Wang J C, Chang K P, Lin C T, et al. Integration of ammonia-plasma-functionalized graphene nanodiscs as charge trapping centers for nonvolatile memory applications. Carbon, 2017, 113: 318\u2013324","journal-title":"Carbon"},{"key":"9799_CR28","doi-asserted-by":"publisher","first-page":"716","DOI":"10.1016\/j.sse.2004.09.003","volume":"49","author":"M Specht","year":"2005","unstructured":"Specht M, Reisinger H, Hofmann F, et al. Charge trapping memory structures with Al2O3 trapping dielectric for high-temperature applications. Solid-State Electron, 2005, 49: 716\u2013720","journal-title":"Solid-State Electron"},{"key":"9799_CR29","doi-asserted-by":"publisher","first-page":"19110","DOI":"10.1021\/jp206923q","volume":"115","author":"S Kaniyankandy","year":"2011","unstructured":"Kaniyankandy S, Achary S N, Rawalekar S, et al. Ultrafast relaxation dynamics in graphene oxide: evidence of electron trapping. J Phys Chem C, 2011, 115: 19110\u201319116","journal-title":"J Phys Chem C"},{"key":"9799_CR30","doi-asserted-by":"publisher","first-page":"483","DOI":"10.1109\/TNS.2003.812927","volume":"50","author":"T R Oldham","year":"2003","unstructured":"Oldham T R, McLean F B. Total ionizing dose effects in MOS oxides and devices. IEEE Trans Nucl Sci, 2003, 50: 483\u2013499","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR31","doi-asserted-by":"publisher","first-page":"1333","DOI":"10.1103\/PhysRevLett.30.1333","volume":"30","author":"R C Hughes","year":"1973","unstructured":"Hughes R C. Charge-carrier transport phenomena in amorphous SiO2: direct measurement of the drift mobility and lifetime. Phys Rev Lett, 1973, 30: 1333\u20131336","journal-title":"Phys Rev Lett"},{"key":"9799_CR32","doi-asserted-by":"publisher","first-page":"2101","DOI":"10.1109\/23.983179","volume":"48","author":"R M Lenahan","year":"2001","unstructured":"Lenahan R M, Campbell J P, Kang A Y, et al. Radiation-induced leakage currents: atomic scale mechanisms. IEEE Trans Nucl Sci, 2001, 48: 2101\u20132106","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR33","doi-asserted-by":"publisher","first-page":"2375","DOI":"10.1109\/23.736457","volume":"45","author":"M Ceschia","year":"1998","unstructured":"Ceschia M, Paccagnella A, Cester A, et al. Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides. IEEE Trans Nucl Sci, 1998, 45: 2375\u20132382","journal-title":"IEEE Trans Nucl Sci"},{"key":"9799_CR34","doi-asserted-by":"publisher","first-page":"098501","DOI":"10.1088\/1674-1056\/27\/9\/098501","volume":"27","author":"J S Bi","year":"2018","unstructured":"Bi J S, Xi K, Li B, et al. Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate flash memory. Chin Phys B, 2018, 27: 098501","journal-title":"Chin Phys B"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9799-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-018-9799-1\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-018-9799-1.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,8,8]],"date-time":"2023-08-08T10:39:51Z","timestamp":1691491191000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-018-9799-1"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,11,7]]},"references-count":34,"journal-issue":{"issue":"12","published-print":{"date-parts":[[2019,12]]}},"alternative-id":["9799"],"URL":"https:\/\/doi.org\/10.1007\/s11432-018-9799-1","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,11,7]]},"assertion":[{"value":"30 December 2018","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 January 2019","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"31 January 2019","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"7 November 2019","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"222401"}}