{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2023,3,6]],"date-time":"2023-03-06T22:26:13Z","timestamp":1678141573735},"reference-count":9,"publisher":"Springer Science and Business Media LLC","issue":"2","license":[{"start":{"date-parts":[[2020,10,27]],"date-time":"2020-10-27T00:00:00Z","timestamp":1603756800000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2020,10,27]],"date-time":"2020-10-27T00:00:00Z","timestamp":1603756800000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2021,2]]},"DOI":"10.1007\/s11432-019-2795-7","type":"journal-article","created":{"date-parts":[[2020,11,3]],"date-time":"2020-11-03T13:03:24Z","timestamp":1604408604000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":4,"title":["Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET"],"prefix":"10.1007","volume":"64","author":[{"given":"Zhexuan","family":"Ren","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xia","family":"An","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Gensong","family":"Li","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xing","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2020,10,27]]},"reference":[{"key":"2795_CR1","doi-asserted-by":"publisher","first-page":"1010","DOI":"10.1109\/TED.2006.872088","volume":"53","author":"S E Thompson","year":"2006","unstructured":"Thompson S E, Sun S E, Choi S E, et al. Uniaxial-process-induced strained-Si: extending the CMOS roadmap. IEEE Trans Electron Dev, 2006, 53: 1010\u20131020","journal-title":"IEEE Trans Electron Dev"},{"key":"2795_CR2","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1007\/s11432-019-2643-5","volume":"62","author":"Z G Ji","year":"2019","unstructured":"Ji Z G, Chen H B, Li X Y. Design for reliability with the advanced integrated circuit (IC) technology: challenges and opportunities. Sci China Inf Sci, 2019, 62: 226401: 1\u20134","journal-title":"Sci China Inf Sci"},{"key":"2795_CR3","doi-asserted-by":"crossref","unstructured":"Hou C Y. Design challenges and enablement for 28nm and 20nm technology nodes. In: Symposium on VLSI Technology (VLSI), Honolulu, 2010. 225\u2013226","DOI":"10.1109\/VLSIT.2010.5556237"},{"key":"2795_CR4","doi-asserted-by":"crossref","unstructured":"Ren P, Xu X, Hao P, et al. Adding the missing time-dependent layout dependency into device-circuit-layout co-optimization \u2014 New findings on the layout dependent aging effects. In: IEEE Int Electr Dev Meeting (IEDM), Washington, 2015. 11.7.1\u201311.7.4","DOI":"10.1109\/IEDM.2015.7409679"},{"key":"2795_CR5","doi-asserted-by":"crossref","unstructured":"Jiang H, Sagong H, Kim J, et al. Localized layout effect related reliability approach in 8nm FinFETs technology: from transistor to circuit. In: IEEE Int Reliab Phys Symp (IRPS), Monterey, 2019. 1\u20135","DOI":"10.1109\/IRPS.2019.8720409"},{"key":"2795_CR6","first-page":"3288","volume":"57","author":"N Rezzak","year":"2010","unstructured":"Rezzak N, Schrimpf R D, Alles M L, et al. Layout-related stress effects on radiation-induced leakage current. IEEE Trans Nucl Sci, 2010, 57: 3288\u20133292","journal-title":"IEEE Trans Nucl Sci"},{"key":"2795_CR7","doi-asserted-by":"publisher","first-page":"2830","DOI":"10.1109\/TNS.2011.2167518","volume":"58","author":"R Arora","year":"2011","unstructured":"Arora R, Zhang E X, Seth S, et al. Trade-offs between RF performance and total-dose tolerance in 45-nm RF-CMOS. IEEE Trans Nucl Sci, 2011, 58: 2830\u20132837","journal-title":"IEEE Trans Nucl Sci"},{"key":"2795_CR8","doi-asserted-by":"publisher","first-page":"776","DOI":"10.1109\/TNS.2010.2098046","volume":"58","author":"L Ratti","year":"2011","unstructured":"Ratti L, Gaioni L, Manghisoni M, et al. TID-induced degradation in static and noise behavior of sub-100 nm multifinger bulk NMOSFETs. IEEE Trans Nucl Sci, 2011, 58: 776\u2013784","journal-title":"IEEE Trans Nucl Sci"},{"key":"2795_CR9","doi-asserted-by":"publisher","first-page":"2398","DOI":"10.1109\/TNS.2015.2498539","volume":"62","author":"S Gerardin","year":"2015","unstructured":"Gerardin S, Bagatin M, Cornale D, et al. Enhancement of transistor-to-transistor variability due to total dose effects in 65-nm MOSFETs. IEEE Trans Nucl Sci, 2015, 62: 2398\u20132403","journal-title":"IEEE Trans Nucl Sci"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-019-2795-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-019-2795-7\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-019-2795-7.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2022,3,22]],"date-time":"2022-03-22T21:25:45Z","timestamp":1647984345000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-019-2795-7"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,10,27]]},"references-count":9,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2021,2]]}},"alternative-id":["2795"],"URL":"https:\/\/doi.org\/10.1007\/s11432-019-2795-7","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,10,27]]},"assertion":[{"value":"13 December 2019","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"19 January 2020","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"4 February 2020","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 October 2020","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"129401"}}