{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,15]],"date-time":"2026-01-15T12:32:52Z","timestamp":1768480372066,"version":"3.49.0"},"reference-count":22,"publisher":"Springer Science and Business Media LLC","issue":"2","license":[{"start":{"date-parts":[[2019,9,16]],"date-time":"2019-09-16T00:00:00Z","timestamp":1568592000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2019,9,16]],"date-time":"2019-09-16T00:00:00Z","timestamp":1568592000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2020,2]]},"DOI":"10.1007\/s11432-019-9836-9","type":"journal-article","created":{"date-parts":[[2019,9,25]],"date-time":"2019-09-25T15:53:29Z","timestamp":1569426809000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":8,"title":["Vertical SnS2\/Si heterostructure for tunnel diodes"],"prefix":"10.1007","volume":"63","author":[{"given":"Rundong","family":"Jia","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qianqian","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2019,9,16]]},"reference":[{"key":"9836_CR1","doi-asserted-by":"publisher","first-page":"329","DOI":"10.1038\/nature10679","volume":"479","author":"A M Ionescu","year":"2011","unstructured":"Ionescu A M, Riel H. Tunnel field-effect transistors as energy-efficient electronic switches. Nature, 2011, 479: 329\u2013337","journal-title":"Nature"},{"key":"9836_CR2","doi-asserted-by":"publisher","first-page":"91","DOI":"10.1038\/nature15387","volume":"526","author":"D Sarkar","year":"2015","unstructured":"Sarkar D, Xie X, Liu W, et al. A subthermionic tunnel field-effect transistor with an atomically thin channel. Nature, 2015, 526: 91\u201395","journal-title":"Nature"},{"key":"9836_CR3","doi-asserted-by":"publisher","first-page":"540","DOI":"10.1109\/LED.2017.2679031","volume":"38","author":"Y Zhao","year":"2017","unstructured":"Zhao Y, Wu C L, Huang Q Q, et al. A novel tunnel FET design through adaptive bandgap engineering with constant sub-threshold slope over 5 decades of current and high ION\/IOFF ratio. IEEE Electron Device Lett, 2017, 38: 540\u2013543","journal-title":"IEEE Electron Device Lett"},{"key":"9836_CR4","doi-asserted-by":"publisher","first-page":"211","DOI":"10.1109\/LED.2012.2234078","volume":"34","author":"A W Dey","year":"2013","unstructured":"Dey A W, Borg B M, Ganjipour B, et al. High-current GaSb\/InAs(Sb) nanowire tunnel field-effect transistors. IEEE Electron Device Lett, 2013, 34: 211\u2013213","journal-title":"IEEE Electron Device Lett"},{"key":"9836_CR5","doi-asserted-by":"publisher","first-page":"16042","DOI":"10.1038\/natrevmats.2016.42","volume":"1","author":"Y Liu","year":"2016","unstructured":"Liu Y, Weiss N O, Duan X D, et al. Van der Waals heterostructures and devices. Nat Rev Mater, 2016, 1: 16042","journal-title":"Nat Rev Mater"},{"key":"9836_CR6","doi-asserted-by":"publisher","first-page":"2071","DOI":"10.1021\/nn507278b","volume":"9","author":"T Roy","year":"2015","unstructured":"Roy T, Tosun M, Cao X, et al. Dual-gated MoS2\/WSe2 van der Waals tunnel diodes and transistors. ACS Nano, 2015, 9: 2071\u20132079","journal-title":"ACS Nano"},{"key":"9836_CR7","doi-asserted-by":"publisher","first-page":"083111","DOI":"10.1063\/1.4942647","volume":"108","author":"T Roy","year":"2016","unstructured":"Roy T, Tosun M, Hettick M, et al. 2D-2D tunneling field-effect transistors using WSe2\/SnSe2 heterostructures. Appl Phys Lett, 2016, 108: 083111","journal-title":"Appl Phys Lett"},{"key":"9836_CR8","doi-asserted-by":"publisher","first-page":"033103","DOI":"10.1063\/1.4974303","volume":"110","author":"J Xu","year":"2017","unstructured":"Xu J, Jia J Y, Lai S, et al. Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric. Appl Phys Lett, 2017, 110: 033103","journal-title":"Appl Phys Lett"},{"key":"9836_CR9","doi-asserted-by":"crossref","unstructured":"Yan X, Liu C S, Li C, et al. Tunable SnSe2\/WSe2 heterostructure tunneling field effect transistor. Small, 2017, 1701478","DOI":"10.1002\/smll.201701478"},{"key":"9836_CR10","doi-asserted-by":"publisher","first-page":"061405","DOI":"10.1007\/s11432-016-5559-z","volume":"59","author":"X F Li","year":"2016","unstructured":"Li X F, Gao T T, Wu Y Q. Development of two-dimensional materials for electronic applications. Sci China Inf Sci, 2016, 59: 061405","journal-title":"Sci China Inf Sci"},{"key":"9836_CR11","doi-asserted-by":"publisher","first-page":"062404","DOI":"10.1007\/s11432-018-9429-2","volume":"62","author":"Q Xie","year":"2019","unstructured":"Xie Q, Chen C, Liu M J, et al. Short-channel effects on the static noise margin of 6T SRAM composed of 2D semiconductor MOSFETs. Sci China Inf Sci, 2019, 62: 062404","journal-title":"Sci China Inf Sci"},{"key":"9836_CR12","doi-asserted-by":"publisher","first-page":"183505","DOI":"10.1063\/1.4966283","volume":"109","author":"S Krishnamoorthy","year":"2016","unstructured":"Krishnamoorthy S, Lee Ii E W, Lee C H, et al. High current density 2D\/3D MoS2\/GaN Esaki tunnel diodes. Appl Phys Lett, 2016, 109: 183505","journal-title":"Appl Phys Lett"},{"key":"9836_CR13","doi-asserted-by":"publisher","first-page":"109401","DOI":"10.1007\/s11432-018-9398-6","volume":"61","author":"B X Zhang","year":"2018","unstructured":"Zhang B X, An X, Liu P Q, et al. Improvement of thermal stability of nickel germanide using nitrogen plasma pretreatment for germanium-based technology. Sci China Inf Sci, 2018, 61: 109401","journal-title":"Sci China Inf Sci"},{"key":"9836_CR14","doi-asserted-by":"publisher","first-page":"4155","DOI":"10.1109\/TED.2018.2867337","volume":"65","author":"K Xu","year":"2018","unstructured":"Xu K, Cai Y H, Zhu W J. Esaki diodes based on 2-D\/3-D heterojunctions. IEEE Trans Electron Devices, 2018, 65: 4155\u20134159","journal-title":"IEEE Trans Electron Devices"},{"key":"9836_CR15","doi-asserted-by":"publisher","first-page":"2880","DOI":"10.1021\/nn500044q","volume":"8","author":"S McDonnell","year":"2014","unstructured":"McDonnell S, Addou R, Buie C, et al. Defect-dominated doping and contact resistance in MoS2. ACS Nano, 2014, 8: 2880\u20132888","journal-title":"ACS Nano"},{"key":"9836_CR16","doi-asserted-by":"publisher","first-page":"2732","DOI":"10.1063\/1.369590","volume":"85","author":"R Schlaf","year":"1999","unstructured":"Schlaf R, Lang O, Pettenkofer C, et al. Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: charge transfer correction term for the electron affinity rule. J Appl Phys, 1999, 85: 2732\u20132753","journal-title":"J Appl Phys"},{"key":"9836_CR17","doi-asserted-by":"publisher","first-page":"32355","DOI":"10.1021\/acsami.8b10687","volume":"10","author":"N Fang","year":"2018","unstructured":"Fang N, Nagashio K. Accumulation-mode two-dimensional field-effect transistor: operation mechanism and thickness scaling rule. ACS Appl Mater Interfaces, 2018, 10: 32355\u201332364","journal-title":"ACS Appl Mater Interfaces"},{"key":"9836_CR18","doi-asserted-by":"publisher","first-page":"5534","DOI":"10.1002\/adma.201502278","volume":"27","author":"Y Jin","year":"2015","unstructured":"Jin Y, Keum D H, An S J, et al. A van der Waals homojunction: ideal p-n diode behavior in MoSe2. Adv Mater, 2015, 27: 5534\u20135540","journal-title":"Adv Mater"},{"key":"9836_CR19","doi-asserted-by":"publisher","first-page":"3832","DOI":"10.1021\/acsnano.7b00021","volume":"11","author":"M H Doan","year":"2017","unstructured":"Doan M H, Jin Y, Adhikari S, et al. Charge transport in MoS2\/WSe2 van der Waals heterostructure with tunable inversion layer. ACS Nano, 2017, 11: 3832\u20133840","journal-title":"ACS Nano"},{"key":"9836_CR20","doi-asserted-by":"publisher","first-page":"1846","DOI":"10.1063\/1.1663501","volume":"45","author":"W Bludau","year":"1974","unstructured":"Bludau W, Onton A, Heinke W. Temperature dependence of the band gap of silicon. J Appl Phys, 1974, 45: 1846\u20131848","journal-title":"J Appl Phys"},{"key":"9836_CR21","doi-asserted-by":"publisher","first-page":"1312","DOI":"10.1039\/C5TA08214E","volume":"4","author":"L A Burton","year":"2016","unstructured":"Burton L A, Whittles T J, Hesp D, et al. Electronic and optical properties of single crystal SnS2: an earth-abundant disulfide photocatalyst. J Mater Chem A, 2016, 4: 1312\u20131318","journal-title":"J Mater Chem A"},{"key":"9836_CR22","doi-asserted-by":"crossref","unstructured":"Huang Q Q, Huang R, Zhan Z, et al. A novel Si Tunnel FET with 36 mV\/dec subthreshold slope based on junction depleted-modulation through striped gate configuration. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2012. 187\u2013190","DOI":"10.1109\/IEDM.2012.6479005"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-019-9836-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-019-9836-9\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-019-9836-9.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,5,12]],"date-time":"2023-05-12T11:27:27Z","timestamp":1683890847000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-019-9836-9"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2019,9,16]]},"references-count":22,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2020,2]]}},"alternative-id":["9836"],"URL":"https:\/\/doi.org\/10.1007\/s11432-019-9836-9","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2019,9,16]]},"assertion":[{"value":"23 January 2019","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 March 2019","order":2,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"16 September 2019","order":3,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"122401"}}