{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,4,9]],"date-time":"2026-04-09T01:07:18Z","timestamp":1775696838735,"version":"3.50.1"},"reference-count":38,"publisher":"Springer Science and Business Media LLC","issue":"10","license":[{"start":{"date-parts":[[2020,8,26]],"date-time":"2020-08-26T00:00:00Z","timestamp":1598400000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"},{"start":{"date-parts":[[2020,8,26]],"date-time":"2020-08-26T00:00:00Z","timestamp":1598400000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springer.com\/tdm"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2020,10]]},"DOI":"10.1007\/s11432-020-2866-0","type":"journal-article","created":{"date-parts":[[2020,8,31]],"date-time":"2020-08-31T07:50:59Z","timestamp":1598860259000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":24,"title":["Efficient 16 Boolean logic and arithmetic based on bipolar oxide memristors"],"prefix":"10.1007","volume":"63","author":[{"given":"Rui","family":"Yuan","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Mingyuan","family":"Ma","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Liying","family":"Xu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Zhenhua","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qingxi","family":"Duan","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Teng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yu","family":"Wang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ru","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuchao","family":"Yang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2020,8,26]]},"reference":[{"key":"2866_CR1","doi-asserted-by":"publisher","first-page":"144","DOI":"10.1038\/530144a","volume":"530","author":"M M Waldrop","year":"2016","unstructured":"Waldrop M M. The chips are down for Moore\u2019s law. Nature, 2016, 530: 144\u2013147","journal-title":"Nature"},{"key":"2866_CR2","doi-asserted-by":"publisher","first-page":"200","DOI":"10.1038\/nphys2566","volume":"9","author":"M D Ventra","year":"2013","unstructured":"Ventra M D, Pershin Y V. The parallel approach. Nat Phys, 2013, 9: 200\u2013202","journal-title":"Nat Phys"},{"key":"2866_CR3","doi-asserted-by":"publisher","first-page":"5975","DOI":"10.1002\/adma.201301940","volume":"25","author":"M Cassinerio","year":"2013","unstructured":"Cassinerio M, Ciocchini N, Ielmini D. Logic computation in phase change materials by threshold and memory switching. Adv Mater, 2013, 25: 5975\u20135980","journal-title":"Adv Mater"},{"key":"2866_CR4","doi-asserted-by":"publisher","first-page":"668","DOI":"10.1126\/science.1254642","volume":"345","author":"P A Merolla","year":"2014","unstructured":"Merolla P A, Arthur J V, Alvarez-Icaza R, et al. A million spiking-neuron integrated circuit with a scalable communication network and interface. Science, 2014, 345: 668\u2013673","journal-title":"Science"},{"key":"2866_CR5","doi-asserted-by":"publisher","first-page":"61","DOI":"10.1038\/nature14441","volume":"521","author":"M Prezioso","year":"2015","unstructured":"Prezioso M, Merrikh-Bayat F, Hoskins B D, et al. Training and operation of an integrated neuromorphic network based on metal-oxide memristors. Nature, 2015, 521: 61\u201364","journal-title":"Nature"},{"key":"2866_CR6","doi-asserted-by":"crossref","unstructured":"Li S C, Xu C, Zou Q S, et al. Pinatubo: a processing-in-memory architecture for bulk bitwise operations in emerging non-volatile memories. In: Proceedings of the 53rd Annual Design Automation Conference, Austin Texas, 2016","DOI":"10.1145\/2897937.2898064"},{"key":"2866_CR7","doi-asserted-by":"publisher","first-page":"873","DOI":"10.1038\/nature08940","volume":"464","author":"J Borghetti","year":"2010","unstructured":"Borghetti J, Snider G S, Kuekes P J, et al. \u2018Memristive\u2019 switches enable \u2018stateful\u2019 logic operations via material implication. Nature, 2010, 464: 873\u2013876","journal-title":"Nature"},{"key":"2866_CR8","doi-asserted-by":"publisher","first-page":"305205","DOI":"10.1088\/0957-4484\/23\/30\/305205","volume":"23","author":"E Linn","year":"2012","unstructured":"Linn E, Rosezin R, Tappertzhofen S, et al. Beyond von Neumann-logic operations in passive crossbar arrays alongside memory operations. Nanotechnology, 2012, 23: 305205","journal-title":"Nanotechnology"},{"key":"2866_CR9","doi-asserted-by":"publisher","first-page":"1700032","DOI":"10.1002\/aelm.201700032","volume":"3","author":"Y C Yang","year":"2017","unstructured":"Yang Y C, Yin M H, Yu Z Z, et al. Multifunctional nanoionic devices enabling simultaneous heterosynaptic plasticity and efficient in-memory Boolean logic. Adv Electron Mater, 2017, 3: 1700032","journal-title":"Adv Electron Mater"},{"key":"2866_CR10","doi-asserted-by":"publisher","first-page":"1900212","DOI":"10.1002\/admt.201900212","volume":"4","author":"L Y Xu","year":"2019","unstructured":"Xu L Y, Yuan R, Zhu Z H, et al. Memristor-based efficient in-memory logic for cryptologic and arithmetic applications. Adv Mater Technol, 2019, 4: 1900212","journal-title":"Adv Mater Technol"},{"key":"2866_CR11","doi-asserted-by":"publisher","first-page":"1216","DOI":"10.1038\/nmat5009","volume":"16","author":"S Goswami","year":"2017","unstructured":"Goswami S, Matula A J, Rath S P, et al. Robust resistive memory devices using solution-processable metal-coordinated azo aromatics. Nat Mater, 2017, 16: 1216\u20131224","journal-title":"Nat Mater"},{"key":"2866_CR12","doi-asserted-by":"publisher","first-page":"191","DOI":"10.1038\/nnano.2015.29","volume":"10","author":"H S P Wong","year":"2015","unstructured":"Wong H S P, Salahuddin S. Memory leads the way to better computing. Nat Nanotech, 2015, 10: 191\u2013194","journal-title":"Nat Nanotech"},{"key":"2866_CR13","doi-asserted-by":"publisher","first-page":"1400056","DOI":"10.1002\/aelm.201400056","volume":"1","author":"C S Hwang","year":"2015","unstructured":"Hwang C S. Prospective of semiconductor memory devices: from memory system to materials. Adv Electron Mater, 2015, 1: 1400056","journal-title":"Adv Electron Mater"},{"key":"2866_CR14","doi-asserted-by":"publisher","first-page":"060422","DOI":"10.1007\/s11432-017-9424-y","volume":"61","author":"W Ma","year":"2018","unstructured":"Ma W, Zidan M A, Lu W D. Neuromorphic computing with memristive devices. Sci China Inf Sci, 2018, 61: 060422","journal-title":"Sci China Inf Sci"},{"key":"2866_CR15","doi-asserted-by":"publisher","first-page":"274","DOI":"10.1038\/s41928-018-0069-1","volume":"1","author":"Y C Yang","year":"2018","unstructured":"Yang Y C, Huang R. Probing memristive switching in nanoionic devices. Nat Electron, 2018, 1: 274\u2013287","journal-title":"Nat Electron"},{"key":"2866_CR16","doi-asserted-by":"publisher","first-page":"429","DOI":"10.1038\/nnano.2008.160","volume":"3","author":"J J Yang","year":"2008","unstructured":"Yang J J, Pickett M D, Li X, et al. Memristive switching mechanism for metal\/oxide\/metal nanodevices. Nat Nanotech, 2008, 3: 429\u2013433","journal-title":"Nat Nanotech"},{"key":"2866_CR17","doi-asserted-by":"publisher","first-page":"254002","DOI":"10.1088\/0957-4484\/22\/25\/254002","volume":"22","author":"K M Kim","year":"2011","unstructured":"Kim K M, Jeong D S, Hwang C S, et al. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook. Nanotechnology, 2011, 22: 254002","journal-title":"Nanotechnology"},{"key":"2866_CR18","doi-asserted-by":"publisher","first-page":"033715","DOI":"10.1063\/1.2001146","volume":"98","author":"B J Choi","year":"2005","unstructured":"Choi B J, Jeong D S, Kim S K, et al. Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition. J Appl Phys, 2005, 98: 033715","journal-title":"J Appl Phys"},{"key":"2866_CR19","doi-asserted-by":"publisher","first-page":"333","DOI":"10.1038\/s41928-018-0092-2","volume":"1","author":"D Ielmini","year":"2018","unstructured":"Ielmini D, Wong H S P. In-memory computing with resistive switching devices. Nat Electron, 2018, 1: 333\u2013343","journal-title":"Nat Electron"},{"key":"2866_CR20","doi-asserted-by":"publisher","first-page":"15","DOI":"10.1109\/MCAS.2016.2583673","volume":"16","author":"I Vourkas","year":"2016","unstructured":"Vourkas I, Sirakoulis G C. Emerging memristor-based logic circuit design approaches: a review. IEEE Circ Syst Mag, 2016, 16: 15\u201330","journal-title":"IEEE Circ Syst Mag"},{"key":"2866_CR21","doi-asserted-by":"publisher","first-page":"13330","DOI":"10.1038\/srep13330","volume":"5","author":"H T Li","year":"2015","unstructured":"Li H T, Gao B, Chen Z W, et al. A learnable parallel processing architecture towards unity of memory and computing. Sci Rep, 2015, 5: 13330","journal-title":"Sci Rep"},{"key":"2866_CR22","doi-asserted-by":"publisher","first-page":"2170","DOI":"10.1038\/s41467-018-04624-8","volume":"9","author":"A Serb","year":"2018","unstructured":"Serb A, Khiat A, Prodromakis T. Seamlessly fused digital-analogue reconfigurable computing using memristors. Nat Commun, 2018, 9: 2170","journal-title":"Nat Commun"},{"key":"2866_CR23","doi-asserted-by":"publisher","first-page":"3357","DOI":"10.1002\/adfm.201303365","volume":"24","author":"T G You","year":"2014","unstructured":"You T G, Shuai Y, Luo W B, et al. Exploiting memristive BiFeO3 bilayer structures for compact sequential logics. Adv Funct Mater, 2014, 24: 3357\u20133365","journal-title":"Adv Funct Mater"},{"key":"2866_CR24","doi-asserted-by":"publisher","first-page":"1500138","DOI":"10.1002\/aelm.201500138","volume":"1","author":"T Breuer","year":"2015","unstructured":"Breuer T, Siemon A, Linn E, et al. A HfO2-based complementary switching crossbar adder. Adv Electron Mater, 2015, 1: 1500138","journal-title":"Adv Electron Mater"},{"key":"2866_CR25","doi-asserted-by":"publisher","first-page":"6414","DOI":"10.1002\/adfm.201500865","volume":"25","author":"A Siemon","year":"2015","unstructured":"Siemon A, Breuer T, Aslam N, et al. Realization of Boolean logic functionality using redox-based memristive devices. Adv Funct Mater, 2015, 25: 6414\u20136423","journal-title":"Adv Funct Mater"},{"key":"2866_CR26","doi-asserted-by":"publisher","first-page":"15467","DOI":"10.1038\/srep15467","volume":"5","author":"S Gao","year":"2015","unstructured":"Gao S, Zeng F, Wang M J, et al. Implementation of complete Boolean logic functions in single complementary resistive switch. Sci Rep, 2015, 5: 15467","journal-title":"Sci Rep"},{"key":"2866_CR27","doi-asserted-by":"publisher","first-page":"9758","DOI":"10.1002\/adma.201602418","volume":"28","author":"P Huang","year":"2016","unstructured":"Huang P, Kang J F, Zhao Y D, et al. Reconfigurable nonvolatile logic operations in resistance switching crossbar array for large-scale circuits. Adv Mater, 2016, 28: 9758\u20139764","journal-title":"Adv Mater"},{"key":"2866_CR28","doi-asserted-by":"crossref","unstructured":"Chen B, Cai F X, Zhou J T, et al. Efficient in-memory computing architecture based on crossbar arrays. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), Washington, 2015","DOI":"10.1109\/IEDM.2015.7409720"},{"key":"2866_CR29","first-page":"895","volume":"61","author":"S Kvatinsky","year":"2014","unstructured":"Kvatinsky S, Belousov D, Liman S, et al. MAGIC-memristor-aided logic. IEEE Trans Circ Syst II, 2014, 61: 895\u2013899","journal-title":"IEEE Trans Circ Syst II"},{"key":"2866_CR30","doi-asserted-by":"publisher","first-page":"1538","DOI":"10.1109\/LED.2019.2931947","volume":"40","author":"W S Shen","year":"2019","unstructured":"Shen W S, Huang P, Fan M Q, et al. Stateful logic operations in one-transistor-one- resistor resistive random access memory array. IEEE Electron Device Lett, 2019, 40: 1538\u20131541","journal-title":"IEEE Electron Device Lett"},{"key":"2866_CR31","doi-asserted-by":"publisher","first-page":"43691","DOI":"10.1109\/ACCESS.2019.2907976","volume":"7","author":"G Z Liu","year":"2019","unstructured":"Liu G Z, Zheng L J, Wang G Y, et al. A carry lookahead adder based on hybrid CMOS-memristor logic circuit. IEEE Access, 2019, 7: 43691\u201343696","journal-title":"IEEE Access"},{"key":"2866_CR32","doi-asserted-by":"publisher","first-page":"1900082","DOI":"10.1002\/aisy.201900082","volume":"2","author":"N Xu","year":"2020","unstructured":"Xu N, Park T G, Kim H J, et al. A stateful logic family based on a new logic primitive circuit composed of two antiparallel bipolar memristors. Adv Intell Syst, 2020, 2: 1900082","journal-title":"Adv Intell Syst"},{"key":"2866_CR33","doi-asserted-by":"publisher","first-page":"289","DOI":"10.1360\/N112018-00247","volume":"50","author":"H Yang","year":"2020","unstructured":"Yang H, Duan S K, Dong Z K, et al. A memristor-CMOS-based general-logic circuit and its applications (in Chinese). Sci Sin Inform, 2020, 50: 289\u2013302","journal-title":"Sci Sin Inform"},{"key":"2866_CR34","doi-asserted-by":"publisher","first-page":"22","DOI":"10.1016\/j.mejo.2019.02.013","volume":"86","author":"N Wald","year":"2019","unstructured":"Wald N, Kvatinsky S. Understanding the influence of device, circuit and environmental variations on real processing in memristive memory using memristor aided logic. MicroElectron J, 2019, 86: 22\u201333","journal-title":"MicroElectron J"},{"key":"2866_CR35","doi-asserted-by":"publisher","first-page":"505102","DOI":"10.1088\/1361-6463\/aa9646","volume":"50","author":"L Cheng","year":"2017","unstructured":"Cheng L, Zhang M Y, Li Y, et al. Reprogrammable logic in memristive crossbar for in-memory computing. J Phys D-Appl Phys, 2017, 50: 505102","journal-title":"J Phys D-Appl Phys"},{"key":"2866_CR36","doi-asserted-by":"publisher","first-page":"2054","DOI":"10.1109\/TVLSI.2013.2282132","volume":"22","author":"S Kvatinsky","year":"2014","unstructured":"Kvatinsky S, Satat G, Wald N, et al. Memristor-based material implication (IMPLY) logic: design principles and methodologies. IEEE Trans VLSI Syst, 2014, 22: 2054\u20132066","journal-title":"IEEE Trans VLSI Syst"},{"key":"2866_CR37","doi-asserted-by":"publisher","first-page":"3914","DOI":"10.1007\/s12274-016-1260-1","volume":"9","author":"G C Adam","year":"2016","unstructured":"Adam G C, Hoskins B D, Prezioso M, et al. Optimized stateful material implication logic for three-dimensional data manipulation. Nano Res, 2016, 9: 3914\u20133923","journal-title":"Nano Res"},{"key":"2866_CR38","doi-asserted-by":"crossref","unstructured":"Chen W H, Lin W J, Lai L Y, et al. A 16 Mb dual-mode ReRAM macro with sub-14 ns computing-in-memory and memory functions enabled by self-write termination scheme. In: Proceedings of IEEE International Electron Devices Meeting (IEDM), San Francisco, 2017","DOI":"10.1109\/IEDM.2017.8268468"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-020-2866-0.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-020-2866-0\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-020-2866-0.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2021,11,19]],"date-time":"2021-11-19T21:07:47Z","timestamp":1637356067000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-020-2866-0"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2020,8,26]]},"references-count":38,"journal-issue":{"issue":"10","published-print":{"date-parts":[[2020,10]]}},"alternative-id":["2866"],"URL":"https:\/\/doi.org\/10.1007\/s11432-020-2866-0","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2020,8,26]]},"assertion":[{"value":"15 March 2020","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"25 March 2020","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"8 April 2020","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"26 August 2020","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"202401"}}