{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2024,1,12]],"date-time":"2024-01-12T05:34:20Z","timestamp":1705037660395},"reference-count":6,"publisher":"Springer Science and Business Media LLC","issue":"2","license":[{"start":{"date-parts":[[2021,8,9]],"date-time":"2021-08-09T00:00:00Z","timestamp":1628467200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2021,8,9]],"date-time":"2021-08-09T00:00:00Z","timestamp":1628467200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2022,2]]},"DOI":"10.1007\/s11432-020-3197-8","type":"journal-article","created":{"date-parts":[[2021,8,12]],"date-time":"2021-08-12T04:19:19Z","timestamp":1628741959000},"update-policy":"http:\/\/dx.doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":1,"title":["Effects of non-fatal electrostatic discharge on the threshold voltage degradation in nano CMOS devices"],"prefix":"10.1007","volume":"65","author":[{"given":"Hei","family":"Wong","sequence":"first","affiliation":[]},{"given":"Shurong","family":"Dong","sequence":"additional","affiliation":[]},{"given":"Zehua","family":"Chen","sequence":"additional","affiliation":[]}],"member":"297","published-online":{"date-parts":[[2021,8,9]]},"reference":[{"key":"3197_CR1","doi-asserted-by":"publisher","first-page":"1753","DOI":"10.1109\/TED.2009.2022698","volume":"56","author":"A J Walker","year":"2009","unstructured":"Walker A J, Puchner H, Dhanraj S P. High-voltage CMOS ESD and the safe operating area. IEEE Trans Electron Devices, 2009, 56: 1753\u20131760","journal-title":"IEEE Trans Electron Devices"},{"key":"3197_CR2","doi-asserted-by":"crossref","unstructured":"Wong H, Dong S, Chen Z. On the ESD protection and nonfatal ESD strike on nano CMOS devices. In: Proceedings of IEEE 31st International Conference on Microelectronics, 2019. 3\u20138","DOI":"10.1109\/MIEL.2019.8889652"},{"key":"3197_CR3","doi-asserted-by":"publisher","first-page":"1528","DOI":"10.1109\/TED.2004.834683","volume":"51","author":"J Wu","year":"2004","unstructured":"Wu J, Rosenbaum E. Gate oxide reliability under ESD-like pulse stress. IEEE Trans Electron Dev, 2004, 51: 1528\u20131532","journal-title":"IEEE Trans Electron Dev"},{"key":"3197_CR4","doi-asserted-by":"publisher","first-page":"7364","DOI":"10.1063\/1.355004","volume":"74","author":"H Wong","year":"1993","unstructured":"Wong H, Cheng Y C. Generation of interface states at the silicon\/oxide interface due to hot-electron injection. J Appl Phys, 1993, 74: 7364\u20137368","journal-title":"J Appl Phys"},{"key":"3197_CR5","doi-asserted-by":"publisher","first-page":"129401","DOI":"10.1007\/s11432-019-2795-7","volume":"64","author":"Z X Ren","year":"2021","unstructured":"Ren Z X, An X, Li G S, et al. Layout dependence of totalionizing-dose response in 65-nm bulk Si pMOSFET. Sci China Inf Sci, 2021, 64: 129401","journal-title":"Sci China Inf Sci"},{"key":"3197_CR6","doi-asserted-by":"publisher","first-page":"120401","DOI":"10.1007\/s11432-017-9239-5","volume":"60","author":"Y N Xu","year":"2017","unstructured":"Xu Y N, Bi J S, Xu G B, et al. Total ionizing dose effects and annealing behaviors of HfO2-based MOS capacitor. Sci China Inf Sci, 2017, 60: 120401","journal-title":"Sci China Inf Sci"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-020-3197-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-020-3197-8\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-020-3197-8.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2023,3,6]],"date-time":"2023-03-06T22:03:36Z","timestamp":1678140216000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-020-3197-8"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2021,8,9]]},"references-count":6,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2022,2]]}},"alternative-id":["3197"],"URL":"https:\/\/doi.org\/10.1007\/s11432-020-3197-8","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2021,8,9]]},"assertion":[{"value":"9 December 2020","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"15 January 2021","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"24 February 2021","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 August 2021","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"129403"}}