{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,1,13]],"date-time":"2026-01-13T21:07:54Z","timestamp":1768338474634,"version":"3.49.0"},"reference-count":28,"publisher":"Springer Science and Business Media LLC","issue":"2","license":[{"start":{"date-parts":[[2022,10,28]],"date-time":"2022-10-28T00:00:00Z","timestamp":1666915200000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2022,10,28]],"date-time":"2022-10-28T00:00:00Z","timestamp":1666915200000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,2]]},"DOI":"10.1007\/s11432-021-3377-2","type":"journal-article","created":{"date-parts":[[2022,11,3]],"date-time":"2022-11-03T08:03:13Z","timestamp":1667462593000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":2,"title":["Degradation induced by holes in Si3N4\/AlGaN\/GaN MIS HEMTs under off-state stress with UV light"],"prefix":"10.1007","volume":"66","author":[{"given":"Yilin","family":"Chen","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Qing","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jiejie","family":"Zhu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Minhan","family":"Mi","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Meng","family":"Zhang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yuwei","family":"Zhou","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Ziyue","family":"Zhao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaohua","family":"Ma","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Yue","family":"Hao","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2022,10,28]]},"reference":[{"key":"3377_CR1","doi-asserted-by":"publisher","first-page":"1151","DOI":"10.1109\/JPROC.2009.2034397","volume":"98","author":"N Ikeda","year":"2010","unstructured":"Ikeda N, Niiyama Y, Kambayashi H, et al. GaN power transistors on Si substrates for switching applications. Proc IEEE, 2010, 98: 1151\u20131161","journal-title":"Proc IEEE"},{"key":"3377_CR2","doi-asserted-by":"publisher","first-page":"2155","DOI":"10.1109\/TPEL.2013.2268900","volume":"29","author":"J Millan","year":"2014","unstructured":"Millan J, Godignon P, Perpina X, et al. A survey of wide bandgap power semiconductor devices. IEEE Trans Power Electron, 2014, 29: 2155\u20132163","journal-title":"IEEE Trans Power Electron"},{"key":"3377_CR3","doi-asserted-by":"publisher","first-page":"779","DOI":"10.1109\/TED.2017.2657579","volume":"64","author":"K J Chen","year":"2017","unstructured":"Chen K J, Haberlen O, Lidow A, et al. GaN-on-Si power technology: devices and applications. IEEE Trans Electron Device, 2017, 64: 779\u2013795","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR4","doi-asserted-by":"publisher","first-page":"163502","DOI":"10.1063\/1.4985592","volume":"111","author":"J J Zhu","year":"2017","unstructured":"Zhu J J, Zhu Q, Chen L X, et al. Exponential dependence of capture cross section on activation energy for interface traps in Al2O3\/AlN\/AlGaN\/GaN metal-insulator-semiconductor heterostructures. Appl Phys Lett, 2017, 111: 163502","journal-title":"Appl Phys Lett"},{"key":"3377_CR5","doi-asserted-by":"publisher","first-page":"100213","DOI":"10.7567\/JJAP.53.100213","volume":"53","author":"Z Yatabe","year":"2014","unstructured":"Yatabe Z, Hori Y, Ma W C, et al. Characterization of electronic states at insulator\/(Al)GaN interfaces for improved insulated gate and surface passivation structures of GaN-based transistors. Jpn J Appl Phys, 2014, 53: 100213","journal-title":"Jpn J Appl Phys"},{"key":"3377_CR6","doi-asserted-by":"publisher","first-page":"243509","DOI":"10.1063\/1.4811754","volume":"102","author":"M Tapajna","year":"2013","unstructured":"Tapajna M, Jurkovi\u010d M, V\u00e1lik L, et al. Bulk and interface trapping in the gate dielectric of GaN based metal-oxide-semiconductor high-electron-mobility transistors. Appl Phys Lett, 2013, 102: 243509","journal-title":"Appl Phys Lett"},{"key":"3377_CR7","doi-asserted-by":"crossref","unstructured":"Lagger P, Ostermaier C, Pobegen G, et al. Towards understanding the origin of threshold voltage instability of AlGaN\/GaN MIS-HEMTs. In: Proceedings of International Electron Devices Meeting (IEDM), 2012","DOI":"10.1109\/IEDM.2012.6479033"},{"key":"3377_CR8","doi-asserted-by":"publisher","first-page":"1022","DOI":"10.1109\/TED.2014.2303853","volume":"61","author":"P Lagger","year":"2014","unstructured":"Lagger P, Reiner M, Pogany D, et al. Comprehensive study of the complex dynamics of forward bias-induced threshold voltage drifts in GaN based MIS-HEMTs by stress\/recovery experiments. IEEE Trans Electron Device, 2014, 61: 1022\u20131030","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR9","doi-asserted-by":"publisher","first-page":"1497","DOI":"10.1109\/LED.2013.2286090","volume":"34","author":"S Yang","year":"2013","unstructured":"Yang S, Tang Z K, Wong K Y, et al. High-quality interface in Al2O3\/GaN\/GaN\/AlGaN\/GaN MIS structures with in situ pre-gate plasma nitridation. IEEE Electron Device Lett, 2013, 34: 1497\u20131499","journal-title":"IEEE Electron Device Lett"},{"key":"3377_CR10","doi-asserted-by":"crossref","unstructured":"Hua M Y, Liu C, Yang S, et al. 650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric. In: Proceedings of the 27th International Symposium on Power Semiconductor Devices & IC\u2019s (ISPSD), 2015. 10\u201314","DOI":"10.1109\/ISPSD.2015.7123434"},{"key":"3377_CR11","doi-asserted-by":"publisher","first-page":"4814","DOI":"10.1109\/TED.2018.2869703","volume":"65","author":"H Sun","year":"2018","unstructured":"Sun H, Wang M J, Chen J G, et al. Fabrication of high-uniformity and high-reliability Si3N4\/AlGaN\/GaN MIS-HEMTs with self-terminating dielectric etching process in a 150-mm Si foundry. IEEE Trans Electron Device, 2018, 65: 4814\u20134819","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR12","doi-asserted-by":"publisher","first-page":"041202","DOI":"10.1116\/1.4944662","volume":"34","author":"Z Y Liu","year":"2016","unstructured":"Liu Z Y, Huang S, Bao Q L, et al. Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN\/GaN MIS-HEMTs. J Vacuum Sci Tech B, 2016, 34: 041202","journal-title":"J Vacuum Sci Tech B"},{"key":"3377_CR13","doi-asserted-by":"publisher","first-page":"053109","DOI":"10.1063\/1.5078767","volume":"114","author":"X B Cai","year":"2019","unstructured":"Cai X B, Hua M Y, Zhang Z F, et al. Atomic-scale identification of crystalline GaON nanophase for enhanced GaN MIS-FET channel. Appl Phys Lett, 2019, 114: 053109","journal-title":"Appl Phys Lett"},{"key":"3377_CR14","doi-asserted-by":"publisher","first-page":"731","DOI":"10.1109\/TED.2015.2510445","volume":"63","author":"Z L Zhang","year":"2016","unstructured":"Zhang Z L, Yu G H, Zhang X D, et al. Studies on high-voltage GaN-on-Si MIS-HEMTs using LPCVD Si3N4 as gate dielectric and passivation layer. IEEE Trans Electron Device, 2016, 63: 731\u2013738","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR15","doi-asserted-by":"publisher","first-page":"2298","DOI":"10.1109\/TED.2017.2682931","volume":"64","author":"S A Jauss","year":"2017","unstructured":"Jauss S A, Hallaceli K, Mansfeld S, et al. Reliability analysis of LPCVD SiN gate dielectric for AlGaN\/GaN MIS-HEMTs. IEEE Trans Electron Device, 2017, 64: 2298\u20132305","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR16","doi-asserted-by":"publisher","first-page":"067203","DOI":"10.1088\/1674-1056\/ab8895","volume":"29","author":"Y W Zhao","year":"2020","unstructured":"Zhao Y W, Li L A, Que T T, et al. Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric. Chin Phys B, 2020, 29: 067203","journal-title":"Chin Phys B"},{"key":"3377_CR17","doi-asserted-by":"publisher","first-page":"037201","DOI":"10.1088\/1674-1056\/ab696b","volume":"29","author":"T T Que","year":"2020","unstructured":"Que T T, Zhao Y W, Li L A, et al. Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNx gate dielectric. Chin Phys B, 2020, 29: 037201","journal-title":"Chin Phys B"},{"key":"3377_CR18","doi-asserted-by":"crossref","unstructured":"Hua M Y, Wei J, Bao Q L, et al. Reverse-bias stability and reliability of hole-barrier-free E-mode LPCVD-SiNx\/GaN MIS-FETs. In: Proceedings of International Electron Devices Meeting (IEDM), 2017","DOI":"10.1109\/IEDM.2017.8268489"},{"key":"3377_CR19","doi-asserted-by":"publisher","first-page":"413","DOI":"10.1109\/LED.2018.2791664","volume":"39","author":"M Y Hua","year":"2018","unstructured":"Hua M Y, Wei J, Bao Q L, et al. Dependence of VTH stability on gate-bias under reverse-bias stress in E-mode GaN MIS-FET. IEEE Electron Device Lett, 2018, 39: 413\u2013416","journal-title":"IEEE Electron Device Lett"},{"key":"3377_CR20","doi-asserted-by":"publisher","first-page":"093505","DOI":"10.1063\/1.4914455","volume":"106","author":"B K Li","year":"2015","unstructured":"Li B K, Tang X, Chen K J. Optical pumping of deep traps in AlGaN\/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode. Appl Phys Lett, 2015, 106: 093505","journal-title":"Appl Phys Lett"},{"key":"3377_CR21","doi-asserted-by":"publisher","first-page":"4862","DOI":"10.1063\/1.1526166","volume":"81","author":"S K Zhang","year":"2002","unstructured":"Zhang S K, Wang W B, Shtau I, et al. Backilluminated GaN\/AlGaN heterojunction ultraviolet photodetector with high internal gain. Appl Phys Lett, 2002, 81: 4862\u20134864","journal-title":"Appl Phys Lett"},{"key":"3377_CR22","doi-asserted-by":"publisher","first-page":"310","DOI":"10.1016\/j.microrel.2016.08.020","volume":"65","author":"A Caddemi","year":"2016","unstructured":"Caddemi A, Cardillo E, Salvo G, et al. Microwave effects of UV light exposure of a GaN HEMT: measurements and model extraction. MicroElectron Reliab, 2016, 65: 310\u2013317","journal-title":"MicroElectron Reliab"},{"key":"3377_CR23","doi-asserted-by":"crossref","unstructured":"Warnock S, del Alamo J A. OFF-state TDDB in high-voltage GaN MIS-HEMTs. In: Proceedings of IEEE International Reliability Physics Symposium (IRPS), 2017","DOI":"10.1109\/IRPS.2017.7936309"},{"key":"3377_CR24","doi-asserted-by":"publisher","first-page":"3831","DOI":"10.1109\/TED.2018.2856998","volume":"65","author":"M Y Hua","year":"2018","unstructured":"Hua M Y, Wei J, Bao Q L, et al. Hole-induced threshold voltage shift under reverse-bias stress in E-Mode GaN MIS-FET. IEEE Trans Electron Device, 2018, 65: 3831\u20133838","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR25","doi-asserted-by":"publisher","first-page":"217","DOI":"10.1109\/TED.2019.2954282","volume":"67","author":"M Y Hua","year":"2020","unstructured":"Hua M Y, Yang S, Wei J, et al. Hole-induced degradation in E-mode GaN MIS-FETs: impact of substrate terminations. IEEE Trans Electron Device, 2020, 67: 217\u2013223","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR26","doi-asserted-by":"publisher","first-page":"3609","DOI":"10.1109\/TED.2017.2723932","volume":"64","author":"G Dutta","year":"2017","unstructured":"Dutta G, DasGupta N, DasGupta A. Gate leakage mechanisms in AlInN\/GaN and AlGaN\/GaN MIS-HEMTs and its modeling. IEEE Trans Electron Device, 2017, 64: 3609\u20133615","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR27","doi-asserted-by":"publisher","first-page":"3157","DOI":"10.1109\/TED.2013.2272700","volume":"60","author":"S Turuvekere","year":"2013","unstructured":"Turuvekere S, Karumuri N, Rahman A A, et al. Gate leakage mechanisms in AlGaN\/GaN and AlInN\/GaN HEMTs: comparison and modeling. IEEE Trans Electron Device, 2013, 60: 3157\u20133165","journal-title":"IEEE Trans Electron Device"},{"key":"3377_CR28","doi-asserted-by":"publisher","first-page":"153510","DOI":"10.1063\/1.4871802","volume":"104","author":"J J Zhu","year":"2014","unstructured":"Zhu J J, Ma X H, Hou B, et al. Investigation of gate leakage mechanism in Al2O3\/Al0.55Ga0.45N\/GaN metal-oxide-semiconductor high-electron-mobility transistors. Appl Phys Lett, 2014, 104: 153510","journal-title":"Appl Phys Lett"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3377-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-021-3377-2\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3377-2.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,3,21]],"date-time":"2024-03-21T21:24:26Z","timestamp":1711056266000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-021-3377-2"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2022,10,28]]},"references-count":28,"journal-issue":{"issue":"2","published-print":{"date-parts":[[2023,2]]}},"alternative-id":["3377"],"URL":"https:\/\/doi.org\/10.1007\/s11432-021-3377-2","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2022,10,28]]},"assertion":[{"value":"8 July 2021","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"18 September 2021","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"1 December 2021","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"28 October 2022","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"122401"}}