{"status":"ok","message-type":"work","message-version":"1.0.0","message":{"indexed":{"date-parts":[[2026,3,26]],"date-time":"2026-03-26T16:16:26Z","timestamp":1774541786827,"version":"3.50.1"},"reference-count":42,"publisher":"Springer Science and Business Media LLC","issue":"4","license":[{"start":{"date-parts":[[2023,3,9]],"date-time":"2023-03-09T00:00:00Z","timestamp":1678320000000},"content-version":"tdm","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"},{"start":{"date-parts":[[2023,3,9]],"date-time":"2023-03-09T00:00:00Z","timestamp":1678320000000},"content-version":"vor","delay-in-days":0,"URL":"https:\/\/www.springernature.com\/gp\/researchers\/text-and-data-mining"}],"content-domain":{"domain":["link.springer.com"],"crossmark-restriction":false},"short-container-title":["Sci. China Inf. Sci."],"published-print":{"date-parts":[[2023,4]]},"DOI":"10.1007\/s11432-021-3502-4","type":"journal-article","created":{"date-parts":[[2023,3,14]],"date-time":"2023-03-14T13:03:23Z","timestamp":1678799003000},"update-policy":"https:\/\/doi.org\/10.1007\/springer_crossmark_policy","source":"Crossref","is-referenced-by-count":21,"title":["An ultra-high-density and energy-efficient content addressable memory design based on 3D-NAND flash"],"prefix":"10.1007","volume":"66","author":[{"given":"Haozhang","family":"Yang","sequence":"first","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Peng","family":"Huang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Runze","family":"Han","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Xiaoyan","family":"Liu","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]},{"given":"Jinfeng","family":"Kang","sequence":"additional","affiliation":[],"role":[{"role":"author","vocabulary":"crossref"}]}],"member":"297","published-online":{"date-parts":[[2023,3,9]]},"reference":[{"key":"3502_CR1","doi-asserted-by":"crossref","unstructured":"Thangam M S, Vijayalakshmi M. Data-intensive computation offloading using fog and cloud computing for mobile devices applications. In: Proceedings of International Conference on Smart Systems and Inventive Technology, Tirunelveli, 2018. 547\u2013550","DOI":"10.1109\/ICSSIT.2018.8748812"},{"key":"3502_CR2","doi-asserted-by":"publisher","first-page":"3229","DOI":"10.1109\/TPDS.2017.2717883","volume":"28","author":"A Jonathan","year":"2017","unstructured":"Jonathan A, Ryden M, Oh K, et al. Nebula: distributed edge cloud for data intensive computing. IEEE Trans Parallel Distrib Syst, 2017, 28: 3229\u20133242","journal-title":"IEEE Trans Parallel Distrib Syst"},{"key":"3502_CR3","doi-asserted-by":"publisher","first-page":"894","DOI":"10.1109\/JPROC.2020.2989782","volume":"108","author":"X Y Zhang","year":"2020","unstructured":"Zhang X Y, Liu C L, Suen C Y. Towards robust pattern recognition: a review. Proc IEEE, 2020, 108: 894\u2013922","journal-title":"Proc IEEE"},{"key":"3502_CR4","doi-asserted-by":"publisher","first-page":"1480","DOI":"10.1109\/TPAMI.2014.2366765","volume":"37","author":"Q Ye","year":"2014","unstructured":"Ye Q, Doermann D. Text detection and recognition in imagery: a survey. IEEE Trans Pattern Anal Mach Intell, 2014, 37: 1480\u20131500","journal-title":"IEEE Trans Pattern Anal Mach Intell"},{"key":"3502_CR5","doi-asserted-by":"publisher","first-page":"153","DOI":"10.1109\/JETCAS.2015.2426491","volume":"5","author":"L Nielen","year":"2015","unstructured":"Nielen L, Siemon A, Tappertzhofen S, et al. Study of memristive associative capacitive networks for CAM applications. IEEE J Emerg Sel Top Circ Syst, 2015, 5: 153\u2013161","journal-title":"IEEE J Emerg Sel Top Circ Syst"},{"key":"3502_CR6","doi-asserted-by":"publisher","first-page":"104010","DOI":"10.1088\/0268-1242\/29\/10\/104010","volume":"29","author":"L Zheng","year":"2014","unstructured":"Zheng L, Shin S, Steve Kang S M. Memristor-based ternary content addressable memory (mTCAM) for data-intensive computing. Semicond Sci Technol, 2014, 29: 104010","journal-title":"Semicond Sci Technol"},{"key":"3502_CR7","doi-asserted-by":"crossref","unstructured":"Huang P T, Lai S L, Chuang C T, et al. 0.339 fJ\/bit\/search energy-efficient TCAM macro design in 40 nm LP CMOS. In: Proceedings of Asian Solid-State Circuits Conference, KaoHsiung, 2014. 129\u2013132","DOI":"10.1109\/ASSCC.2014.7008877"},{"key":"3502_CR8","doi-asserted-by":"publisher","first-page":"712","DOI":"10.1109\/JSSC.2005.864128","volume":"41","author":"K Pagiamtzis","year":"2006","unstructured":"Pagiamtzis K, Sheikholeslami A. Content-addressable memory (CAM) circuits and architectures: a tutorial and survey. IEEE J Solid-State Circ, 2006, 41: 712\u2013727","journal-title":"IEEE J Solid-State Circ"},{"key":"3502_CR9","doi-asserted-by":"crossref","unstructured":"El Baraji M, Javerliac V, Prenat G. Towards an ultra-low power, high density and non-volatile ternary cam. In: Proceedings of Non-Volatile Memory Technology Symposium, Pacific Grove, 2008. 1\u20137","DOI":"10.1109\/NVMT.2008.4731196"},{"key":"3502_CR10","doi-asserted-by":"publisher","first-page":"271","DOI":"10.1109\/TETC.2016.2642057","volume":"7","author":"M Imani","year":"2019","unstructured":"Imani M, Peroni D, Rahimi A, et al. Resistive CAM acceleration for tunable approximate computing. IEEE Trans Emerg Top Comput, 2019, 7: 271\u2013280","journal-title":"IEEE Trans Emerg Top Comput"},{"key":"3502_CR11","doi-asserted-by":"publisher","first-page":"1311","DOI":"10.1109\/JPROC.2015.2434888","volume":"103","author":"R Karam","year":"2015","unstructured":"Karam R, Puri R, Ghosh S, et al. Emerging trends in design and applications of memory-based computing and content-addressable memories. Proc IEEE, 2015, 103: 1311\u20131330","journal-title":"Proc IEEE"},{"key":"3502_CR12","doi-asserted-by":"crossref","unstructured":"Li J, Montoye R, Ishii M, et al. 1 Mb 0.41 \u00b5m2 2T-2R cell nonvolatile TCAM with two-bit encoding and clocked self-referenced sensing. In: Proceedings of Symposium on VLSI Technology, Kyoto, 2013. 104\u2013105","DOI":"10.1109\/JSSC.2013.2292055"},{"key":"3502_CR13","doi-asserted-by":"publisher","first-page":"04FE02","DOI":"10.7567\/JJAP.57.04FE02","volume":"57","author":"R Han","year":"2018","unstructured":"Han R, Shen W, Huang P, et al. A novel ternary content addressable memory design based on resistive random access memory with high intensity and low search energy. Jpn J Appl Phys, 2018, 57: 04FE02","journal-title":"Jpn J Appl Phys"},{"key":"3502_CR14","doi-asserted-by":"publisher","first-page":"1294","DOI":"10.1109\/LED.2018.2856537","volume":"39","author":"B Chen","year":"2018","unstructured":"Chen B, Zhang Y, Liu W, et al. Ge-based asymmetric RRAM enable 8F2 content addressable memory. IEEE Electron Device Lett, 2018, 39: 1294\u20131297","journal-title":"IEEE Electron Device Lett"},{"key":"3502_CR15","doi-asserted-by":"crossref","unstructured":"Zheng L, Shin S, Lloyd S, et al. RRAM-based TCAMs for pattern search. In: Proceedings of International Symposium on Circuits and Systems, Montreal, 2016. 1382\u20131385","DOI":"10.1109\/ISCAS.2016.7527507"},{"key":"3502_CR16","doi-asserted-by":"publisher","first-page":"2599","DOI":"10.1109\/TVLSI.2018.2805470","volume":"26","author":"A Grossi","year":"2018","unstructured":"Grossi A, Vianello E, Zambelli C, et al. Experimental investigation of 4-kb RRAM arrays programming conditions suitable for TCAM. IEEE Trans VLSI Syst, 2018, 26: 2599\u20132607","journal-title":"IEEE Trans VLSI Syst"},{"key":"3502_CR17","doi-asserted-by":"publisher","first-page":"2785","DOI":"10.1109\/TED.2020.2994896","volume":"67","author":"X Yin","year":"2020","unstructured":"Yin X, Li C, Huang Q, et al. FeCAM: a universal compact digital and analog content addressable memory using ferroelectric. IEEE Trans Electron Dev, 2020, 67: 2785\u20132792","journal-title":"IEEE Trans Electron Dev"},{"key":"3502_CR18","doi-asserted-by":"publisher","first-page":"240","DOI":"10.1109\/LED.2019.2963300","volume":"41","author":"A J Tan","year":"2019","unstructured":"Tan A J, Chatterjee K, Zhou J, et al. Experimental demonstration of a ferroelectric HfO -based content addressable memory cell. IEEE Electron Device Lett, 2019, 41: 240\u2013243","journal-title":"IEEE Electron Device Lett"},{"key":"3502_CR19","doi-asserted-by":"publisher","first-page":"521","DOI":"10.1038\/s41928-019-0321-3","volume":"2","author":"K Ni","year":"2019","unstructured":"Ni K, Yin X, Laguna A F, et al. Ferroelectric ternary content-addressable memory for one-shot learning. Nat Electron, 2019, 2: 521\u2013529","journal-title":"Nat Electron"},{"key":"3502_CR20","first-page":"464","volume":"67","author":"C Wang","year":"2020","unstructured":"Wang C, Zhang D, Zeng L, et al. Design of magnetic non-volatile TCAM with priority-decision in memory technology for high speed, low power, and high reliability. IEEE Trans Circ Syst I, 2020, 67: 464\u2013474","journal-title":"IEEE Trans Circ Syst I"},{"key":"3502_CR21","doi-asserted-by":"publisher","first-page":"1163","DOI":"10.1109\/TED.2015.2398122","volume":"62","author":"M K Gupta","year":"2015","unstructured":"Gupta M K, Hasan M. Robust high speed ternary magnetic content addressable memory. IEEE Trans Electron Dev, 2015, 62: 1163\u20131169","journal-title":"IEEE Trans Electron Dev"},{"key":"3502_CR22","doi-asserted-by":"publisher","first-page":"66","DOI":"10.1109\/TVLSI.2008.2007735","volume":"18","author":"W Xu","year":"2009","unstructured":"Xu W, Zhang T, Chen Y. Design of spin-torque transfer magnetoresistive RAM and CAM\/TCAM with high sensing and search speed. IEEE Trans VLSI Syst, 2009, 18: 66\u201374","journal-title":"IEEE Trans VLSI Syst"},{"key":"3502_CR23","doi-asserted-by":"crossref","unstructured":"Miwa T, Yamada H, Hirota Y, et al. A 1 Mb 5-transistor\/bit non-volatile CAM based on flash-memory technologies. In: Proceedings of International Solid-State Circuits Conference, San Francisco, 1996. 40\u201341","DOI":"10.1109\/ISSCC.1996.488505"},{"key":"3502_CR24","doi-asserted-by":"crossref","unstructured":"Kramer A, Canegallo R, Chinosi M, et al. 55 GCPS CAM using 5b analog flash. In: Proceedings of International Solid-State Circuits Conference, San Francisco, 1997. 44\u201345","DOI":"10.1109\/ISSCC.1997.585253"},{"key":"3502_CR25","doi-asserted-by":"crossref","unstructured":"Fedorov V V, Abusultan M, Khatri S P. An area-efficient ternary CAM design using floating gate transistors. In: Proceedings of International Conference on Computer Design, Seoul, 2014. 55\u201360","DOI":"10.1109\/ICCD.2014.6974662"},{"key":"3502_CR26","doi-asserted-by":"publisher","first-page":"1189","DOI":"10.1109\/LED.2020.3004989","volume":"41","author":"F Wang","year":"2020","unstructured":"Wang F, Feng Y, Zhan X, et al. Implementation of data search in multi-level NAND flash memory by complementary storage scheme. IEEE Electron Dev Lett, 2020, 41: 1189\u20131192","journal-title":"IEEE Electron Dev Lett"},{"key":"3502_CR27","doi-asserted-by":"publisher","first-page":"1149","DOI":"10.1109\/4.475701","volume":"30","author":"K D Suh","year":"1995","unstructured":"Suh K D, Suh B H, Lim Y H, et al. A 3.3 V 32 Mb NAND flash memory with incremental step pulse programming scheme. IEEE J Solid-State Circ, 1995, 30: 1149\u20131156","journal-title":"IEEE J Solid-State Circ"},{"key":"3502_CR28","unstructured":"Kang D, Kim M, Jeon S C, et al. A 512 Gb 3-bit\/Cell 3D 6th-Generation V-NAND flash memory with 82 MB\/s write throughput and 1.2 Gb\/s interface. In: Proceedings of International Solid-State Circuits Conference, San Francisco, 2019. 216\u2013218"},{"key":"3502_CR29","doi-asserted-by":"crossref","unstructured":"Yang H Z, Huang P, Han R Z, et al. A novel high-density and low-power ternary content addressable memory design based on 3D NAND flash. In: Proceedings of Silicon Nanoelectronics Workshop, Honolulu, 2020. 29\u201330","DOI":"10.1109\/SNW50361.2020.9131662"},{"key":"3502_CR30","doi-asserted-by":"crossref","unstructured":"Lue H T, Du P Y, Chen W C, et al. A 128 Gb (MLC)\/192 Gb (TLC) single-gate vertical channel (SGVC) architecture 3D NAND using only 16 layers with robust read disturb, long-retention and excellent scaling capability. In: Proceedings of International Electron Devices Meeting, San Francisco, 2017","DOI":"10.1109\/IEDM.2017.8268419"},{"key":"3502_CR31","doi-asserted-by":"publisher","first-page":"988","DOI":"10.1109\/TVLSI.2018.2882194","volume":"27","author":"P Wang","year":"2018","unstructured":"Wang P, Xu F, Wang B, et al. Three-dimensional NAND flash for vector-matrix multiplication. IEEE Trans VLSI Syst, 2018, 27: 988\u2013991","journal-title":"IEEE Trans VLSI Syst"},{"key":"3502_CR32","doi-asserted-by":"publisher","first-page":"41","DOI":"10.1016\/j.sse.2018.11.009","volume":"152","author":"S H Lee","year":"2019","unstructured":"Lee S H, Kwon D W, Kim S, et al. Investigation of transient current characteristics with scaling-down poly-Si body thickness and grain size of 3D NAND flash memory. Solid-State Electron, 2019, 152: 41\u201345","journal-title":"Solid-State Electron"},{"key":"3502_CR33","doi-asserted-by":"crossref","unstructured":"Cho J, Kang D C, Park J, et al. A 512Gb 3b\/cell 7th-generation 3D-NAND flash memory with 184 MB\/s write throughput and 2.0 Gb\/s interface. In: Proceedings of International Solid-State Circuits Conference, San Francisco, 2021. 426\u2013428","DOI":"10.1109\/ISSCC42613.2021.9366054"},{"key":"3502_CR34","doi-asserted-by":"crossref","unstructured":"Lee S, Kim C, Kim M, et al. A 1 Tb 4b\/cell 64-stacked-WL 3D NAND flash memory with 12 MB\/s program throughput. In: Proceedings of International Solid-State Circuits Conference, San Francisco, 2018. 340\u2013342","DOI":"10.1109\/ISSCC.2018.8310323"},{"key":"3502_CR35","doi-asserted-by":"crossref","unstructured":"Cai Y, Haratsch E F, Mutlu O, et al. Threshold voltage distribution in MLC NAND flash memory: characterization, analysis, and modeling. In: Proceedings of Design, Automation & Test in Europe Conference & Exhibition, Grenoble, 2013. 1285\u20131290","DOI":"10.7873\/DATE.2013.266"},{"key":"3502_CR36","doi-asserted-by":"publisher","first-page":"932","DOI":"10.1109\/JSSC.2013.2239092","volume":"48","author":"I Arsovski","year":"2013","unstructured":"Arsovski I, Hebig T, Dobson D, et al. A 32 nm 0.58-fJ\/Bit\/search 1-GHz ternary content addressable memory compiler using silicon-aware early-predict late-correct sensing with embedded deep-trench capacitor noise mitigation. IEEE J Solid-State Circ, 2013, 48: 932\u2013939","journal-title":"IEEE J Solid-State Circ"},{"key":"3502_CR37","doi-asserted-by":"crossref","unstructured":"Siau C, Kim K H, Lee S, et al. A 512 Gb 3-bit\/cell 3D flash memory on 128-wordline-layer with 132 MB\/s write performance featuring circuit-under-array technology. In: Proceedings of International Solid-State Circuits Conference, San Francisco, 2019. 218\u2013220","DOI":"10.1109\/ISSCC.2019.8662445"},{"key":"3502_CR38","doi-asserted-by":"crossref","unstructured":"Tseng P H, Lee F M, Lin Y H, et al. In-memory-searching architecture based on 3D-NAND technology with ultra-high parallelism. In: Proceedings of International Electron Devices Meeting, San Francisco, 2020","DOI":"10.1109\/IEDM13553.2020.9372035"},{"key":"3502_CR39","doi-asserted-by":"publisher","first-page":"042401","DOI":"10.1007\/s11432-018-9490-1","volume":"62","author":"K L Wang","year":"2019","unstructured":"Wang K L, Du G, Lun Z Y, et al. Modeling of program Vth distribution for 3-D TLC NAND flash memory. Sci China Inf Sci, 2019, 62: 042401","journal-title":"Sci China Inf Sci"},{"key":"3502_CR40","doi-asserted-by":"publisher","first-page":"1","DOI":"10.1038\/s41467-021-25873-0","volume":"12","author":"G Pedretti","year":"2021","unstructured":"Pedretti G, Graves C E, Serebryakov S, et al. Tree-based machine learning performed in-memory with memristive analog CAM. Nat Commun, 2021, 12: 1","journal-title":"Nat Commun"},{"key":"3502_CR41","doi-asserted-by":"crossref","unstructured":"Kazemi A, Sharifi M M, Laguna A F, et al. In-memory nearest neighbor search with FeFET multi-bit content-addressable memories. In: Proceedings of Design, Automation & Test in Europe Conference & Exhibition, Grenoble, 2021. 1084\u20131089","DOI":"10.23919\/DATE51398.2021.9474025"},{"key":"3502_CR42","unstructured":"Li H T, Chen W C, Levy A, et al. One-shot learning with memory-augmented neural networks using a 64-kbit, 118 GOPS\/W RRAM-based non-volatile associative memory. In: Proceedings of Symposium on VLSI Technology, Kyoto, 2021. 1\u20132"}],"container-title":["Science China Information Sciences"],"original-title":[],"language":"en","link":[{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3502-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/article\/10.1007\/s11432-021-3502-4\/fulltext.html","content-type":"text\/html","content-version":"vor","intended-application":"text-mining"},{"URL":"https:\/\/link.springer.com\/content\/pdf\/10.1007\/s11432-021-3502-4.pdf","content-type":"application\/pdf","content-version":"vor","intended-application":"similarity-checking"}],"deposited":{"date-parts":[[2024,10,16]],"date-time":"2024-10-16T10:30:58Z","timestamp":1729074658000},"score":1,"resource":{"primary":{"URL":"https:\/\/link.springer.com\/10.1007\/s11432-021-3502-4"}},"subtitle":[],"short-title":[],"issued":{"date-parts":[[2023,3,9]]},"references-count":42,"journal-issue":{"issue":"4","published-print":{"date-parts":[[2023,4]]}},"alternative-id":["3502"],"URL":"https:\/\/doi.org\/10.1007\/s11432-021-3502-4","relation":{},"ISSN":["1674-733X","1869-1919"],"issn-type":[{"value":"1674-733X","type":"print"},{"value":"1869-1919","type":"electronic"}],"subject":[],"published":{"date-parts":[[2023,3,9]]},"assertion":[{"value":"25 November 2021","order":1,"name":"received","label":"Received","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"12 February 2022","order":2,"name":"revised","label":"Revised","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"27 May 2022","order":3,"name":"accepted","label":"Accepted","group":{"name":"ArticleHistory","label":"Article History"}},{"value":"9 March 2023","order":4,"name":"first_online","label":"First Online","group":{"name":"ArticleHistory","label":"Article History"}}],"article-number":"142402"}}